M54640P RENESAS | Alldatasheet

Document overview

  • Manufacturer or author: pROVIDED bY alldatasheet.com(free datasheet download site)
  • PDF pages: 10

Technical content

Features

  • Bipolar and constant-current drive
  • Wide current control rage (20 – 800mA)
  • Wide supply voltage drive range (10 – 40V)
  • Built in flywheel diodes
  • Current level can be changed by steps or continuously.
  • Built in a thermal shutdown circuit Application Printer, FDD, HDD, Fax Function The M54640P drives a stepper motor by the bipolar drive method to change the current direction of a single coil and controls the current direction with PHASE input pin. In order to obtain higher efficiency, the constant current drive system to control the coil current is introduced. The current value can be selected among four levels (0 to max.) by selecting the combination of three internal comparators by logic input. It also can be continuously changed by controlling the reference voltage. Conversion to voltage is conducted by the current value sensing resistor (Rs) and the voltage is sensed with each comparator, and then each comparator output triggers monomulti and the current is cut for a certain time (t OFF ) by utilizing the inductance of the coil. Also, diodes needed for choppering and a thermal shutdown circuit as a countermeasure against overvoltage are built in this circuit. Pin Configuration 125 116 107 Outline 16P4 Output O ne-shot-multi time constant Output power Power supply O utput current O utput current Current sensor Output O utput power C omparator reference input Comparator input O utput current ←M B T VMM GND VCC Ph E M A VMM VR C Io GND M54640P settingdirection switching value setting supply supply

Rev.1.0, Sep.19.2003, page 2 of 9 Block Diagram Schmitt trigger VR VCC 10 2 1 6 15 1 00 01 10 11 M A M B VMM Ph VKH VKM VKL Comparator reference input Comparator input C T E One-shot-multi time constant Current sensor Current sensor OutputOutput Cutput current direction switcing Output current value setting GND Monostable tOFF = 0.69• R T C T Output power supply Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted.) Parameter Symbol Ratings Unit Conditions Supply voltage VCC −0.3 to 7 V Output supply voltage VMM −0.3 to 45 V Logic input voltage VL −0.3 to 6 V Analog input voltage VC −0.3 to Vcc V Comparative input voltage VR −0.3 to 15 V Logic input current IL −10 mA Analog input current IC −10 mA Output supply current IMM ±1000 mA Power dissipation Pd 1.92 W Mounted on a board Operating temperature Topr −20 to 75 °C Storage temperature Tstg −55 to 125 °C Note : Every voltage value is measured when the voltage at GND pin is 0V. The maximum and the minimum of each voltage value are shown in absolute values. Regarding current directions, inflow current is shown in a positive value and outflow current is shown in a negative value. The maximum and the minimum of each current value are shown in absolute values.

Rev.1.0, Sep.19.2003, page 3 of 9 Recommended Operating Condition (Ta = 25°C, unless otherwise noted.) Limits Parameter Symbol Min. Typ. Max. Unit Supply voltage VCC 4.75 5 5.25 V Output supply voltage VMM 10 40 V Output current IO 20 800 mA Logic input rise time tPLH 2 µS Logic input fall time tPHL 2 µS Thermal shutdown temperature T ON 175 °C

Electrical characteristics

(Ta = 25°C, VCC = 5.0V, unless otherwise noted.) L i m i t s Parameter Symbol Min. Typ. Max. Unit Test conditions Logic input voltage “H” V IH 2.0 V CC V V CC =5V “L” V IL 0 0.8 Comparator threshold V CH 400 430 450 mV V R =5V, I0=I1=0 V CM 240 260 280 V R =5V, I0=1,I1=0 V CL 75 90 100 V R =5V, I0=0, I1=1 Comparator input current I CO −20 20 µA Output cutoff current IOFF 100 µA I0=I1=1(Ta=25 °C) Saturation voltage Vsat 4.0 V The voltage at the sensing resistor is not included. IO =500mA Cutoff time tOFF 25 30 35 µ S V MM =10V, tON ≥ 5µs Turnoff delay td 1.6 2.0 µS Ta=25 °C, dVK/dt ≥ 50mV/µs Supply current ICC 25 mA V CC =5V Logic input current “H” I IH 20 µA V I=2.4V “L” I IL −0.4 mA V I=0.4V

Rev.1.0, Sep.19.2003, page 4 of 9 Switching Characteristics Test Circuit M B T VMM GND VCC Phase E M A VMM VR C 10 R S R C C V C C VCC C T R T GND :1Ω : 1kΩ : 56kΩ : 820pF : 820pF : 47µF R S R C R T C C C T C V Switching Waveforms 1/2 tON tOFF tOFF = 0.69RTCT VMA – VMB or VMB – VMA td VCH VCM VCL

Rev.1.0, Sep.19.2003, page 5 of 9 Application Description

  • PHASE INPUT Phase input decides the output mode. Phase MA MB H H L L L H
  • I0, I1 I0 and I1 fixed based on the comparison voltage VR decide the output current level. The current level can be continuously changed by changing the voltage at VR continuously. I0 I1 Current level H H 0 L H Low H L Average L L High
  • Current sensor When the voltage fall at the current sensing resistor and the selected current level becomes of the same level, the comparator triggers the monostable. Then, the output stage is cut off for a certain time (t OFF ). During this cutoff time, the current volume decreases slightly and falls short of the comparison level. After the cutoff time (tOFF ), the output stage is in ON state again. This operation is repeated.
  • Single pulse generator At the comparator output rise edge, the monostable is triggered. The pulse width of the monostable at the external timing Rt and Ct is as follows. tOFF = 0.69 x RtCt Retrigger during tOFF is neglected.
  • Analog control The output current level can be continuously changed by changing the voltage at VR or the feedback voltage to the comparator.

Rev.1.0, Sep.19.2003, page 6 of 9 Timing Chart Phase A Phase B I0,1 = (A) = 0 I0,1 = (B) = 0 Phase A Phase B I0, 1= (B) Phase A Phase B I0 (B) I1 (B) I0 (A) I1 (A) 2-phase excitation 1-2-phase excitation Microstep (divided intosix) I0, 1= (A)

Rev.1.0, Sep.19.2003, page 7 of 9 Typical Characteristics (Absolute maximum ratings) Safety operating temperature Output current Io (A) 1.0 0.8 0.6 0.4 0.2 00 10 20 30 40 45 50 A B C Output VMM (V) Recommended Schottky diodes should be externally connected between output pins and power supply pins. Schottky diodes should be externally instaalled between output pins and power supply pins and between output pins and GND pin. A : B : C : Mounted on a 25cm2 glass epoxy board which is coated with copper on one side. θc-a= 45°C/W 10cm 2 aluminum heat sink (1t) is used. θc-a= 25°C/W 100cm 2 aluminum heat sink (1t) is used. θc-a= 10°C/W Tj(max)= 150°C A : θj-c= 10°C/W B : C : Ambient (°C) 10.0 8.0 6.0 4.0 2.0 0 25 7550 A B C Allowable power dissipation (W) 100 Thermal derating

Rev.1.0, Sep.19.2003, page 8 of 9 Application Example 820pF 1kΩ 820pF 1kΩ 820pF 56kΩ 820pF 56kΩ 47µF Stepper motor M5 4640P Phase A I0A I1A 24V Phase B I0B I1B 7 6 5 4 3 2 1 15 14 13 12 11 10 9 7 6 5 4 32 1 15 14 13 12 11 10 9 M54640P Precautions for use (1) When the whole output current changes by a large margin (for example, when overheat protection operation causes intermittent flow of output current), the supply voltage may undergo a change. Therefore, selection and wiring of power supply should be conducted cautiously to avoid such a situation that the supply voltage exceeds the absolute maximum ratings. (2) When the supply voltage changes by a large margin, the operation of this IC may become unstable. In this case, the change of supply voltage can be controlled by connecting a capacitor at the point near to IC pin between Vcc pin and GND pin. (See above application example.) (3) Thermal shutdown function

  • The state of thermal shutdown operation may differ according to the way of wiring within a board. Therefore, sufficient board evaluation should be conducted before use. When the board is changed, operation on the replacing board should be evaluated.
  • The circuit board on which this IC is mounted is designed to realize low impedance between power supply and output pin. Therefore, it is desirable to take a safe measure such as fixing a fuse to avoid such a situation that the board is damaged by a fire when output pin is internally short-circuited by excessively applied surge voltage by accident.

Rev.1.0, Sep.19.2003, page 9 of 9 Package Dimensions DIP16-P-300-2.54 Weight(g) JEDEC Code 1.0 Alloy 42/Cu Alloy 16P4 Plastic 16pin 300mil DIP Symbol Min Nom Max A b c E D L Dimension in Millimeters A1 0.51 —— — 3.3 — 0.4 0.5 0.59 1.4 1.5 1.8 0.9 1.0 1.3 0.22 0.27 0.34 18.8 19.0 19.2 6.15 6.3 6.45 — 2.54 — — 7.62 — 3.0 —— 0˚ — 15˚ —— 4 . e 16 9 E c e1 D A2 A1 b2bb1e LA SEATING PLANE MMP

© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 1.0 Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placem ent of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. An y diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 RENESAS SALES OFFICES