M48Z2M1Y_10 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 20

Technical content

Datasheet sections

  • 1 Description
  • 2 Operation modes
  • 2.1 READ mode
  • 2.2 WRITE mode
  • 2.3 Data retention mode
  • 3 Maximum ratings
  • 4 DC and AC parameters
  • 5 Package mechanical data
  • 6 Part numbering
  • 7 Environmental information
  • 8 Revision history

Features

■ Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of power ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages PFD = Power-fail deselect voltage): –M 4 8 Z 2 M 1 Y : VCC = 4.5 to 5.5 V 4.2 V ≤ VPFD ≤ 4.5 V –M 4 8 Z 2 M 1 V : VCC = 3.0 to 3.6 V 2.8 V ≤ VPFD ≤ 3.0 V M48Z2M1V not recommended for new design. Contact ST sales office for availability. ■ Batteries are internally isolated until power is applied ■ Pin and function compatible with JEDEC standard 2 Mb x 8 SRAMs ■ RoHS compliant – Lead-free second level interconnect PLDIP36 module (PL)

1 Description

CMOS SRAMs and a control circuit in a plastic 36-pin DIP , long module. WRITEs that can be performed. Figure 1. Logic diagram Table 1. Signal names

2 Operation modes

Table 2. Operating modes IH or VIL; VSO = battery backup switchover voltage.

2.1 READ mode

Figure 4. Address controlled, READ mode AC waveforms Note: Chip enable (E ) and output enable (G) = low, WRITE enable (W) = high.

  1. See Table 10 on page 15 for details.

Figure 5. Chip enable or output enable controlled, READ mode AC waveforms Note: WRITE enable (W ) = high. Table 3. READ mode AC characteristics

  1. C L = 100 pF or 50 pF (see Figure 9 on page 13).
  2. C L = 5 pF (see Figure 9 on page 13).

2.2 WRITE mode

by the earlier rising edge of W or E. will disable the outputs tWLQZ after W falls. Figure 6. WRITE enable controlled, WRITE mode AC waveforms Note: Output enable (G ) = high. Figure 7. Chip enable controlled, WRITE mode AC waveforms Note: Output enable (G ) = high.

Table 4. WRITE mode AC characteristics

2.3 Data retention mode

source which preserves data. VPFD to allow for processor stabilization. After tER, normal RAM operation can resume. For more information on battery storage life refer to the application note AN1012.

  1. C L = 5 pF (see Figure 9 on page 13).
  2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.

2.4 V CC noise and negative going transients

Figure 8) is recommended in order to provide the needed filtering. Figure 8. Supply voltage protection

3 Maximum ratings

extended periods may affect device reliability. Table 5. Absolute maximum ratings

  1. Soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. In order to protect the lithium

battery, preheat temperatures must be limited such that the battery temperature does not exceed +85 °C. Furthermore, the devices shall not be exposed to IR reflow.

4 DC and AC parameters

the measurement conditions when using the quoted parameters. Table 6. Operating and AC measurement conditions Note: Output Hi-Z is defined as the point where data is no longer driven. Figure 9. AC testing load circuit

Table 7. Capacitance Table 8. DC characteristics

  1. Effective capacitance measur ed with power supply at 5 V; sampled only, not 100% tested.

Figure 10. Power down/up mode AC waveforms Table 9. Power down/up AC characteristics Table 10. Power down/up trip points DC characteristics

  1. V PFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200 µs after VCC passes VPFD (min).

  1. V PFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
  2. All voltages referenced to V SS.

5 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 11. PLDIP36 – 36-pin plastic DIP long module, package outline Note: Drawing is not to scale. Table 11. PLDIP36 – 36-pin plastic DIP long module, package mechanical data

6 Part numbering

Table 12. Ordering information scheme ST sales office nearest you.

  1. Not recommended for new design. Contac t ST sales office for availability.
  2. Contact ST sales office for av ailability of extended temperature.

7 Environmental information

Figure 12. Recycling symbols button cell battery fully encapsulated in the final product. and local/national disposal and recycling regulations. compliance statements and waste recycling. Go to www.st.com/nvram, then select "Lithium Battery Recycling" from "Related Topics".

8 Revision history

Table 13. Document revision history Section 5; added Section 7: Environmental information.