M368L6423FTN

M368L1624FTM SANKEN | Alldatasheet

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Technical content

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC Revision 1.2 May. 2004

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004

Revision History

Revision 1.0 (August, 2003) - First release Revision 1.1 (August, 2003) - Added K4H560838F based Module. Revision 1.2 (May, 2004) - Modified IDD current spec.

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Ordering Information

Part Number Density Organization Component Composition Height M368L1624FTM-C(L)B3/AA/A2/B0 128MB 16M x 64 16Mx16 (K4H561638F) * 4EA 1,250mil M368L3223FTN-C(L)B3/AA/A2/B0 256MB 32M x 64 32Mx8 (K4H560838F) * 8EA 1,250mil M381L3223FTM-C(L)B3/AA/A2/B0 256MB 32M x 72 32Mx8 (K4H560838F) * 9EA 1,250mil M368L6423FTN-C(L)B3/AA/A2/B0 512MB 64M x 64 32Mx8 (K4H560838F) * 16EA 1,250mil M381L6423FTM-C(L)B3/AA/A2/B0 512MB 64M x 72 32Mx8 (K4H560838F) * 18EA 1,250mil B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Speed @CL2 133MHz 133MHz 133MHz 100MHz Speed @CL2.5 166MHz 133MHz 133MHz 133MHz Feature

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (128MB, 256MB), double (512MB) sided 184Pin Unbuffered DIMM based on 256Mb F-die (x8, x16)

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Pin Configuration (Front side/back side) Note : 1. * : These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72(M381 ~ ) module, and are not used on x64(M368 ~ ) module. 3. Pins 111, 158 are NC for 1row modules [ M368L1624FTM, M368(81)L3223FTN(M)] & used for 2row modules [M368(81)L6423FTN(M) ] . Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC NC VSS DQ8 DQ9 DQS1 VDDQ CK1 /CK1 VSS DQ10 DQ11 CKE0 VDDQ DQ16 DQ17 DQS2 VSS DQ18 VDDQ DQ19 DQ24 VSS DQ25 DQS3 VDD DQ26 DQ27 VSS CB0 CB1 VDD DQS8 CB2 VSS CB3 BA1 DQ32 VDDQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VDDQ /WE DQ41 /CAS VSS DQS5 DQ42 DQ43 VDD */CS2 DQ48 DQ49 VSS /CK2 CK2 VDDQ DQS6 DQ50 DQ51 VSS VDDID DQ56 DQ57 VDD DQS7 DQ58 DQ59 VSS NC SDA SCL 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 VSS DQ4 DQ5 VDDQ DM0 DQ6 DQ7 VSS NC NC NC VDDQ DQ12 DQ13 DM1 VDD DQ14 DQ15 CKE1 VDDQ *BA2 DQ20 A12 VSS DQ21 A11 DM2 VDD DQ22 DQ23 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 VSS DQ28 DQ29 VDDQ DM3 DQ30 VSS DQ31 CB4 CB5 VDDQ CK0 /CK0 VSS DM8 A10 CB6 VDDQ CB7 VSS DQ36 DQ37 VDD DM4 DQ38 DQ39 VSS DQ44 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 /RAS DQ45 VDDQ /CS0 /CS1 DM5 VSS DQ46 DQ47 */CS3 VDDQ DQ52 DQ53 *A13 VDD DM6 DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD KEYKEY Pin Description Pin Name Function Pin Name Function A0 ~ A12 Address input (Multiplexed) DM0 ~ 7, 8(for ECC) Data - in mask BA0 ~ BA1 Bank Select Address VDD Power supply (2.5V) DQ0 ~ DQ63 Data input/output VDDQ Power Supply for DQS(2.5V) DQS0 ~ DQS8 Data Strobe input/output VSS Ground CK0,CK0 ~ CK2, CK2 Clock input VREF Power supply for reference CKE0, CKE1(for double banks) Clock enable input VDDSPD Se rial EEPROM Power/Supply ( 2.3V to 3.6V ) CS0, CS1(for double banks) Chip select input SDA Serial data I/O RAS Row address strobe SCL Serial clock CAS Column address strobe SA0 ~ 2 Address in EEPROM WE Write enable NC No connection CB0 ~ CB7 (for x72 module) Check bit(Data-in/data-out)

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 DQ8 DQ9 DQ10 DQ11 LDM I/O 6 I/O 4 I/O 1 I/O 3 DQ12 DQ13 DQ14 DQ15 I/O 2 I/O 0 I/O 5 I/O 7 UDM I/O 8 I/O 10 I/O 15 I/O 13 I/O 12 I/O 14 I/O 11 I/O 9 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ24 DQ25 DQ26 DQ27 LDQS I/O 6 I/O 4 I/O 1 I/O 3 DQ28 DQ29 DQ30 DQ31 I/O 2 I/O 0 I/O 5 I/O 7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 I/O 8 I/O 10 I/O 15 I/O 13 I/O 12 I/O 14 I/O 11 I/O 9 DQ56 DQ57 DQ58 DQ59 I/O 6 I/O 4 I/O 1 I/O 3 DQ60 DQ61 DQ62 DQ63 I/O 2 I/O 0 I/O 5 I/O 7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ40 DQ41 DQ42 DQ43 I/O 6 I/O 4 I/O 1 I/O 3 DQ44 DQ45 DQ46 DQ47 I/O 2 I/O 0 I/O 5 I/O 7 I/O 8 I/O 10 I/O 15 I/O 13 I/O 12 I/O 14 I/O 11 I/O 9 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ32 I/O 8 I/O 10 I/O 15 I/O 13 I/O 12 I/O 14 I/O 11 I/O 9 DM1 CS CS CS CS LDQSDQS1 DM0 DQS0 DM3 DQS3 DM2 DQS2 DM5 DQS5 DM4 DQS4 DM6 DQS6 DM7 DQS7 UDQS LDM UDM UDQS LDM UDM LDQS UDQS A0 - A12 A0-A12: DDR SDRAMs D0 - D3 BA0 - BA1 BA0-BA1: DDR SDRAMs D0 - D3 RAS RAS: DDR SDRAMs D0 - D3 CAS CAS: DDR SDRAMs D0 - D3 CKE0 CKE: DDR SDRAMs D0 - D3 WE WE: DDR SDRAMs D0 - D3 UDM UDQS LDM LDQS Clock Wiring CK0/CK0 Clock Input DDR SDRAMs CK1/CK1

0 DDR SDRAM

2 DDR SDRAMs

Notes: 1. DQ-to-I/O wiring is shown as recomended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors: 7.5 Ohms + 5% 128MB, 16M x 64 Non ECC Module (M368L1624FTM) (Populated as 1 bank of x16 DDR SDRAM Module) Functional Block Diagram Card Edge Cap/D0/*Cap Cap/Cap/Cap Cap/*Cap/D2 Cap/Cap/Cap Cap/D1/D3 Cap/Cap/Cap R=120Ω CK0/1/2 CK0/1/2

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 CS0 DQS0 DM0 DM/ CS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DM/ CS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DM/ CS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DM/ CS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS4 DM4 DM/ CS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 DM/ CS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 DM/ CS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7 DM/ CS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 256MB, 32M x 64 Non ECC Module (M368L3223FTN) (Populated as 1 bank of x8 DDR SDRAM Module) Functional Block Diagram A0 - A12 A0-A12 : DDR SDRAMs D0 - D7 RAS RAS : DDR SDRAMs D0 - D7 CAS CAS : DDR SDRAMs D0 - D7 WE WE : DDR SDRAMs D0 - D7 CKE0 CKE : DDR SDRAMs D0 - D7 BA0 - BA1 BA0-BA1 : DDR SDRAMs D0 - D7 VSS D0 - D7 VDD/VDDQ D0 - D7 D0 - D7VREF VDDSPD SPD D0 - D7 *Clock Net Wiring * Clock Wiring Clock Input DDR SDRAMs *CK0/CK0 *CK1/CK1 *CK2/CK2

3 DDR SDRAMs

R=120Ω CK0/1/2 Serial PD A1 A2 SA0 SA1 SA2 SCL SDAWP Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors: 5.1 Ohms + CK0/1/2

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 256MB, 32M x 72 ECC Module (M381L3223FTM) (Populated as 1 bank of x8 DDR SDRAM Module) Functional Block Diagram A0 - A12 A0-A12 : DDR SDRAMs D0 - D8 RAS RAS : DDR SDRAMs D0 - D8 CAS CAS : DDR SDRAMs D0 - D8 WE WE : DDR SDRAMs D0 - D8 CKE0 CKE : DDR SDRAMs D0 - D8 BA0 - BA1 BA0-BA1 : DDR SDRAMs D0 - D8 VSS D0 - D8 VDD/VDDQ D0 - D8 D0 - D8VREF VDDSPD SPD D0 - D8 *Clock Net Wiring * Clock Wiring Clock Input DDR SDRAMs *CK0/CK0 *CK1/CK1 *CK2/CK2 R=120Ω CK0/1/2 CK0/1/2 Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors: 5.1 Ohms +

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 512MB, 64M x 64 Non ECC Module (M368L6423FTN) (Populated as 2 bank of x8 DDR SDRAM Module) Functional Block Diagram CS0 DQS0 DM0 DM/ CS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DM/ CS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DM/ CS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DM/ CS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS4 DM4 DM/ CS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 DM/ CS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 DM/ CS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7 DM/ CS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 DM/ CS DQS DM/ CS DQS DM/ CS DQS D10 DM/ CS DQS D11 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 DM/ CS DQS D12 DM/ CS DQS D13 DM/ CS DQS D14 DM/ CS DQS D15 CS1 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 A0 - A12 A0-A12: DDR SDRAMs D0 - D15 RAS RAS : DDR SDRAMs D0 - D15 CAS CAS : DDR SDRAMs D0 - D15 WE WE : DDR SDRAMs D0 - D15 BA0 - BA1 BA0-BA1 : DDR SDRAMs D0 - D15 VSS D0 - D15 VDD/VDDQ D0 - D15 D0 - D15VREF VDDSPD SPD D0 - D15 *Clock Net Wiring * Clock Wiring Clock Input DDR SDRAMs *CK0/CK0 *CK1/CK1 *CK2/CK2

4 DDR SDRAMs

6 DDR SDRAMs

R=120Ω CK0/1/2 CKE 0/1 CKE : DDR SDRAMs D0 - D15 CK0/1/2 Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors: 3 Ohms +

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 512MB, 64M x 72 ECC Module (M381L6423FTM) (Populated as 2 bank of x8 DDR SDRAM Module) Functional Block Diagram CS0 DQS0 DM0 DM/ CS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DM/ CS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DM/ CS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DM/ CS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS4 DM4 DM/ CS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 DM/ CS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 DM/ CS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7 DM/ CS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 DM/ CS DQS DM/ CS DQS D10 DM/ CS DQS D11 DM/ CS DQS D12 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 DM/ CS DQS D13 DM/ CS DQS D14 DM/ CS DQS D15 DM/ CS DQS D16 CS1 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 A0 - A12 A0-A12 : DDR SDRAMs D0 - D17 RAS RAS : DDR SDRAMs D0 - D17 CAS CAS : DDR SDRAMs D0 - D17 WE WE : DDR SDRAMs D0 - D17 BA0 - BA1 BA0-BA1 : DDR SDRAMs D0 - D17 VSS D0 - D17 VDD/VDDQ D0 - D17 D0 - D17VREF VDDSPD SPD D0 - D17 *Clock Net Wiring * Clock Wiring Clock Input DDR SDRAMs *CK0/CK0 *CK1/CK1 *CK2/CK2 CKE0/1 CKE : DDR SDRAMs D0 - D17 DQS8 DM8 DM/ CS DQS I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 DM/ CS DQS D17 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors:3 Ohms + Card Edge D3/D0/D5 D12/D9/D14 D8/D1/D6 D17/D10/D15 D4/D2/D7 D13/D11/D16 R=120Ω CK0/1/2 CK0/1/2

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V Storage temperature T STG -55 ~ +150 °C Power dissipation P D 1.5 * # of component W Short circuit current I OS 50 mA Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C) Parameter Symbol Min Max Unit Note Supply voltage(for device with a nominal VDD of 2.5V) V DD 2.3 2.7 I/O Supply voltage V DDQ 2.3 2.7 V I/O Reference voltage V REF 0.49*VDDQ 0.51*VDDQ V 1 I/O Termination voltage(system) V TT VREF-0.04 V REF+0.04 V2 Input logic high voltage V IH(DC) V REF+0.15 V DDQ+0.3 V Input logic low voltage V IL(DC) -0.3 V REF-0.15 V Input Voltage Level, CK and CK inputs V IN(DC) -0.3 V DDQ+0.3 V Input Differential Voltage, CK and CK inputs V ID(DC) 0.36 V DDQ+0.6 V 3 V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4 Input leakage current I I -2 2 uA Output leakage current I OZ -5 5 uA Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9m A 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0. Note :

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 DDR SDRAM IDD spec table (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 360 320 320 320 mA IDD1 500 460 460 460 mA I D D 2 P 1 21 21 21 2 m A IDD2F 100 80 80 80 mA I D D 2 Q 8 07 27 27 2 m A IDD3P 140 120 120 120 mA IDD3N 220 180 180 180 mA IDD4R 800 680 680 680 mA IDD4W 760 620 620 620 mA IDD5 720 660 660 660 mA IDD6 Normal 12 12 12 12 mA Low power 6 6 6 6 mA Optional IDD7A 1,400 1,200 1,200 1,200 mA M368L1624FTM [ (16M x 16) * 4, 128MB Non ECC Module ]

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 720 720 640 640 mA IDD1 920 920 840 840 mA IDD2P 24 24 24 24 mA IDD2F 240 200 200 200 mA IDD2Q 200 185 185 185 mA IDD3P 280 240 240 240 mA IDD3N 440 360 360 360 mA IDD4R 1,280 1,120 1,120 1,120 mA IDD4W 1,280 1,080 1,080 1,080 mA IDD5 1,360 1,280 1,280 1,280 mA IDD6 Normal 24 24 24 24 mA Low power 12 12 12 12 mA Optional IDD7A 2,240 2,240 2,080 2,080 mA DDR SDRAM IDD spec table M368L3223FTN [ (32M x 8) * 8, 256MB Non ECC Module ] (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 810 810 720 720 mA IDD1 1,035 1,035 950 950 mA I D D 2 P 2 72 72 72 7 m A IDD2F 270 225 225 225 mA IDD2Q 225 210 210 210 mA IDD3P 320 270 270 270 mA IDD3N 500 410 410 410 mA IDD4R 1,440 1260 1260 1,260 mA IDD4W 1,440 1,220 1,220 1,220 mA IDD5 1,530 1,440 1,440 1,440 mA IDD6 Normal 27 27 27 27 mA Low power 14 14 14 14 mA Optional IDD7A 2,520 2,520 2,340 2,340 mA M381L3223FTM [ (32M x 8) * 9, 256MB ECC Module ]

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 1,160 1,080 1,000 1,000 mA IDD1 1,360 1,280 1,200 1,200 mA I D D 2 P 4 84 84 84 8 m A IDD2F 480 400 400 400 mA IDD2Q 320 290 290 290 mA IDD3P 560 480 480 480 mA IDD3N 880 720 720 720 mA IDD4R 1,720 1,480 1,480 1,480 mA IDD4W 1,720 1,440 1,440 1,440 mA IDD5 1,800 1,640 1,640 1,640 mA IDD6 Normal 48 48 48 48 mA Low power 24 24 24 24 mA Optional IDD7A 2,680 2,600 2,440 2,440 mA DDR SDRAM IDD spec table M368L6423FTN [ (32M x 8) * 16, 512MB Non ECC Module ] (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2 (DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 1,310 1,220 1,130 1,130 mA IDD1 1,530 1,440 1,350 1,350 mA I D D 2 P 5 45 45 45 4 m A IDD2F 540 450 450 450 mA IDD2Q 450 420 420 420 mA IDD3P 630 540 540 540 mA IDD3N 990 810 810 810 mA IDD4R 1,940 1,670 1,670 1,670 mA IDD4W 1,940 1,620 1,620 1,620 mA IDD5 2,030 1,850 1,850 1,850 mA IDD6 Normal 54 54 54 54 mA Low power 27 27 27 27 mA Optional IDD7A 3,020 2,930 2,750 2,750 mA M381L6423FTM [ (32M x 8) * 18, 512MB ECC Module ]

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. 3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz. Output Load Circuit (SSTL_2) Output Z0=50Ω CLOAD=30pF VREF =0.5*VDDQ RT=50Ω Vtt=0.5*VDDQ Input/Output Capacitance (VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz) Parameter Symbol M368L1624FTM M368L3223FTN M381L3223FTM Unit Min Max Min Max Min Max Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE ) C I N 1 4 14 54 95 75 16 0 p F Input capacitance(CKE0) CIN2 34 38 42 50 44 53 pF Input capacitance( CS 0) CIN3 34 38 42 50 44 53 pF Input capacitance( CLK0, CLK1,CLK2) CIN4 25 30 25 30 25 30 pF Input capacitance(DM0~DM7, DM8 (for ECC)) CIN5 6 7 6 7 6 7 pF Data & DQS input/output capacitance(DQ0~DQ63) Cout1 6 7 6 7 6 7 pF Data input/output capacitance (CB0~CB7) Cout2 - - - - 6 7 pF Parameter Symbol M368L6423FTN M381L6423FTM Unit Min Max Min Max Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE ) C I N 1 6 58 16 98 7 p F Input capacitance(CKE0,CKE1) CIN2 42 50 44 53 pF Input capacitance( CS 0, CS1) CIN3 42 50 44 53 pF Input capacitance( CLK0, CLK1,CLK2) CIN4 28 34 28 34 pF Input capacitance(DM0~DM7, DM8 (for ECC)) CIN5 10 12 10 12 pF Data & DQS input/output capacitance(DQ0~DQ63) Cout1 10 12 10 12 pF Data input/output capacitance (CB0~CB7) Cout2 - - 10 12 pF AC Operating Conditions Parameter/Condition Symbol Min Max Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V 3 Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V 3 Input Differential Voltage, CK and CK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CK and CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 AC Timming Parameters & Specifications Parameter Symbol (DDR333@CL=2.5) AA (DDR266@CL=2.0 (DDR266@CL=2.0) (DDR266@CL=2.5) Unit Note Min Max Min Max Min Max R o w c y c l e t i m e t R C 6 06 06 56 5 n s Refresh row cycle time tRFC 72 75 75 75 ns Row active time tRAS 42 70K 45 120K 45 120K 45 120K ns RAS to CAS delay tRCD 18 15 20 20 ns R o w p r e c h a r g e t i m e t R P 1 81 52 02 0 n s Row active to Row active delay tRRD 12 15 15 15 ns W r i t e r e c o v e r y t i m e t W R 1 51 51 51 5 n s L a s t d a t a i n t o R e a d c o m m a n d t W T R 1111 t C K Col. address to Col. address delay tCCD 1111 t C K Clock cycle time CL=2.0 tCK 7.5 12 7.5 12 7.5 12 10 12 ns CL=2.5 6 12 7.5 12 7.5 12 7.5 12 ns DQS-out access time from CK/CK Data strobe edge to ouput data edge tDQSQ - 0.45 - 0.5 - 0.5 - 0.5 ns 12 D Q S - i n s e t u p t i m e t W P R E S 0000 n s 3 DQS-in hold time tWPRE 0.25 0.25 0.25 0.25 tCK DQS falling edge to CK rising-setup time tDSS 0.2 0.2 0.2 0.2 tCK DQS falling edge from CK rising-hold time tDSH 0.2 0.2 0.2 0.2 tCK DQS-in high level width tDQSH 0.35 0.35 0.35 0.35 tCK DQS-in low level width tDQSL 0.35 0.35 0.35 0.35 tCK Address and Control Input setup time(slow) tIS 0.8 1.0 1.0 1.0 ns i, 6~9 Address and Control Input hold time(slow) tIH 0.8 1.0 1.0 1.0 ns i, 6~9 Data-out high impedence time from CK/CK

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Parameter Symbol (DDR333@CL=2.5)) AA (DDR266@CL=2.0) (DDR266@CL=2.0) (DDR266@CL=2.5)) Unit Note Min Max Min Max Min Max Mode register set cycle time tMRD 12 15 15 15 ns DQ & DM setup time to DQS tDS 0.45 0.5 0.5 0.5 ns j, k DQ & DM hold time to DQS tDH 0.45 0.5 0.5 0.5 ns j, k Control & Address input pulse width tIPW 2.2 2.2 2.2 2.2 ns 8 DQ & DM input pulse width tDIPW 1.75 1.75 1.75 1.75 ns 8 Power down exit time tPDEX 6 7.5 7.5 7.5 ns Exit self refresh to non-Read command tXSNR 75 75 75 75 ns Exit self refresh to read command tXSRD 200 200 200 200 tCK Refresh interval time tREFI 7.8 7.8 7.8 7.8 us 4 Output DQS valid window tQH tHP -tQHS - tHP -tQHS - tHP -tQHS - tHP -tQHS -n s 1 1 Clock half period tHP tCLmin or tCHmin - tCLmin or tCHmin - tCLmin or tCHmin - tCLmin or tCHmin -n s 1 0 , 1 1 Data hold skew factor tQHS 0.55 0.75 0.75 0.75 ns 11 Active to Read with Auto precharge command tRAP 18 20 20 20 Autoprecharge write recovery + Precharge time tDAL (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) tCK 13 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333& DDR266 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM Table 2 : Input Setup & Hold Time Derating for Slew Rate Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate AC CHARACTERISTICS DDR333 DDR266 PARAMETER SYMBOL MIN MAX MIN MAX Units Notes DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD V/ns a, m Input Slew Rate tIS tIH Units Notes

0.5 V/ns 0 0 ps i

0.4 V/ns +50 0 ps i

0.3 V/ns +100 0 ps i

Input Slew Rate tDS tDH Units Notes

0.5 V/ns 0 0 ps k

0.4 V/ns +75 +75 ps k

0.3 V/ns +150 +150 ps k

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only) Table 6 : Output Slew Rate Characteristice (X16 Devices only) Table 7 : Output Slew Rate Matching Ratio Characteristics Delta Slew Rate tDS tDH Units Notes +/- 0.0 V/ns 0 0 ps j Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h AC CHARACTERISTICS DDR333 DDR266 PARAMETER MIN MAX MIN MAX Notes Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD TBD TBD TBD e,m

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Component Notes 1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ). 2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance (bus turnaround) will degrade accordingly. 3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 5. For command/address input slew rate ≥ 1.0 V/ns 6. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns 7. For CK & CK slew rate ≥ 1.0 V/ns 8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 9. Slew Rate is measured between VOH(ac) and VOL(ac). 10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces. 11. tQH = tHP - tQHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p- channel to n-channel variation of the output drivers. 12. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 13. tDAL = (tWR/tCK) + (tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Command Truth Table (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low) COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9 A11, A12 Note Register Extended MRS H X L L L L OP CODE 1, 2 Register Mode Register Set H X L L L L OP CODE 1, 2 Refresh Auto Refresh H H LL LH X Self Refresh Entry L 3 Exit L H LH HH X HX XX 3 Bank Active & Row Addr. H X L L H H V Row Address Read & Column Address Auto Precharge Disable HX L H L H V L Column Address Auto Precharge Enable H 4 Write & Column Address Auto Precharge Disable HX L H L L V L Column Address Auto Precharge Enable H 4, 6 Burst Stop H X L H H L X 7 Precharge Bank Selection HX L L H L VL X All Banks X H 5 Active Power Down Entry H L HX XX XLV VV Exit L H X X X X Precharge Power Down Mode Entry H L HX XX X LH HH Exit L H HX XX LV VV DM H X X 8 No operation (NOP) : Not defined H X HX XX X LH HH 9 Note : 1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functi ons are same as the CBR refresh of DRAM. The automatical prechar ge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA 0 ~ BA1 : Bank select addresses. If both BA 0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA 0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA 0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA 0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A 10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/wr ite command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop co mmand is valid at every burst length. 8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Physical Dimensions : 16Mx64 (M368L1624FTM) Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 16Mx16 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H561638F-T*** 5.25 ± 0.005 5.077 Units : Inches (Millimeters) 0.050 0.0078 ±0.006 (0.20 ±0.15)

0.100 Min

(2.30 Min) 0.393 (10.00) (1.270) 0.100 (2.50 ) Detail B A B (128.950) (133.350 ± 0.13) 0.250 (6.350) Detail A 0.157 (4.00) 0.071 (1.80) 0.039 ± 0.002 (1.000 ± 0.050) (3.80) 2.175 (6.62) (64.77) (49.53) (17.80) 2.55 1.95 0.26 2.500 0.7

0.10 M C BA

0.10 M C A

0.1496 (3.00) 0.118 R (2.00) 0.0787 (4.00) 0.1575 1.25 ± 0.006 (31.75 ±0.15) (4.00) (2X) 0.157

0.098 Max

0.050 ± 0.0039 (1.270 ± 0.10) (2.47 Max) M B (3.00) 0.118

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F-T*** 5.25 ± 0.006 5.077 Units : Inches (Millimeters) 0.050 0.0078 ± 0.006 (0.20 ± 0.15) (2.30 Min) 0.393 (10.00) (1.270) 0.100 (2.50 ) Detail B A B (128.950) (133.350 ± 0.15) 0.250 (6.350) Detail A 0.157 (4.00) 0.071 (1.80) 0.039 ± 0.002 (1.000 ± 0.050) (3.80) 2.175 (6.62) (64.77) (49.53) (17.80) 2.55 1.95 0.26 2.500 0.7 0.1496 (3.00) 0.118 R (2.00) 0.0787 (4.00) 0.1575 1.25 ± 0.006 (31.75 ±0.15) (4.00) (2X) 0.157

0.10 M C AM B

(3.00) 0.118 Physical Dimensions : 32Mx64 (M368L3223FTN)

0.07 Max

0.050 ± 0.0039 (1.270 ± 0.10) (1.20 Max)

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F-T*** 5.25 ± 0.006 5.077 Units : Inches (Millimeters) 0.050 0.0078 ± 0.006 (0.20 ± 0.15) (2.30 Min) 0.393 (10.00) (1.270) 0.100 (2.50 ) Detail B A B (128.950) (133.350 ± 0.15) 0.250 (6.350) Detail A 0.157 (4.00) 0.071 (1.80) 0.039 ± 0.002 (1.000 ± 0.050) (3.80) 2.175 (6.62) (64.77) (49.53) (17.80) 2.55 1.95 0.26 2.500 0.7 0.1496 (3.00) 0.118 R (2.00) 0.0787 (4.00) 0.1575 1.25 ± 0.006 (31.75 ±0.15) (4.00) (2X) 0.157 (3.00) 0.118 Physical Dimensions : 32Mx72 (M381L3223FTM) 0.050 ± 0.0039 (1.270 ± 0.10) (1.20 Max)

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F-T*** 5.25 ± 0.006 5.077 Units : Inches (Millimeters) 0.050 0.0078 ± 0.006 (0.20 ± 0.15)

0.145 Max

0.050 ± 0.0039 (1.270 ± 0.10) (2.30 Min) 0.393 (10.00) (1.270) 0.100 (2.50 ) Detail B A B (128.950) (133.350 ± 0.15) 0.250 (6.350) Detail A 0.157 (4.00) 0.071 (1.80) (3.67 Max) 0.039 ± 0.002 (1.000 ± 0.050) (3.80) 2.175 (6.62) (64.77) (49.53) (17.80) 2.55 1.95 0.26 2.500 0.7 0.1496 (3.00) 0.118 R (2.00) 0.0787 (4.00) 0.1575 1.25 ± 0.006 (31.75 ±0.15) (4.00) (2X) 0.157 (3.00) 0.118 Physical Dimensions : 64Mx64 (M368L6423FTN)

DDR SDRAM256MB, 512MB Unbuffered DIMM Rev. 1.2 May, 2004 Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F-T*** 5.25 ± 0.006 5.077 Units : Inches (Millimeters) 0.050 0.0078 ± 0.006 (0.20 ± 0.15) 0.050 ± 0.0039 (1.270 ± 0.10) (2.30 Min) 0.393 (10.00) (1.270) 0.100 (2.50 ) Detail B A B (128.950) (133.350 ± 0.15) 0.250 (6.350) Detail A 0.157 (4.00) 0.071 (1.80) (3.67 Max) 0.039 ± 0.002 (1.000 ± 0.050) (3.80) 2.175 (6.62) (64.77) (49.53) (17.80) 2.55 1.95 0.26 2.500 0.7 0.1496 (3.00) 0.118 R (2.00) 0.0787 (4.00) 0.1575 1.25 ± 0.006 (31.75 ±0.15) (4.00) (2X) 0.157 (3.00) 0.118 Physical Dimensions : 64Mx72 (M381L6423ETM)