M3014

M3014 MOSDESIGN | Alldatasheet

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一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 GENERAL DESCRIPTION 功能敘述 The M3014 is a remote control transmitter ASIC for TV, VTR , etc. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press button, a slider switch or hard wired. FEATURES 產品特長 ‧ Flashed or modulated transmission (default modulated mask option ) ‧ Flashed pulses require a wide band preamplifiers within the receiver ‧ 7 sub-system addresses ‧ Up to 64 commands per sub-system address ‧ Key release detection by toggle bits ‧ A 455KHz ceramic resonator or crystal APPLICATIONS 產品應用 ‧ Audio equipment, TV, VTR, cassette desks etc .. BLOCK DIAGRAM 功能方塊圖 *All specs and applications shown above subject to change without prior notice. ( 以上電路及規格僅供參考 ,本公司得逕行修正 ) Oscillator Control Key matrix R6 Control logic Pulse Distance Dout Timing Generator Remo Output OSCI OSCO Modulator ADRM

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 ABSOLUTE MAXIMUM RATING (TA=25℃) Parameter Rating Unit Supply Voltage 6 V Input Voltage -0.3~VDD V Operating Temperature 0 to 60 ℃ Storage Temperature -25 to +125 ℃ ELECTRICAL CHARACTERISTICS ( VDD=3V unless otherwise specified ) Characteristics Sym. Min. Typ. Max. Unit REMARKS Operating Voltage VDD 2 3 5.5 V Quiescent Current ISB ─ 0.25 1 μA Operating Current IOP ─ 0.3 1 mA No load Output Drive Current IO 1 1.5 ─ mA @VDS=1V Switch Input Current ISB ─ ─ 100 μA VIH VDD –0.2 VDD VDD Input Voltage VIL VSS VSS VSS +0.2 V Oscillator Frequency Fosc ─ 455 ─ KHz ( Cer resonator ) PIN DESCRIPTION No. Pin name Description

1 DOUT Serial data output pin

2~8 C6~C0 Column control for keyboard matrix

9 ADRM Address mode input pin

10 VSS Negative power supply

11 OSCO Oscillator output

12 OSCI Oscillator input

13~19 R0~R6 Row control for keyboard matrix

20 VDD Positive power supply

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 FUNCTION DESCRITION Keyboard operation In the stand-by mode R0 to R6 are on (pull low). Whenever a key is pressed, one or more of the C0~C6 are tied to VSS. This will start the power-up sequence. First the oscillator is activated and after the debounce time tDB ( see figure 2 ),the output drivers ( R0 ~ R6 ) become active successively. Within the first scan cycle the transmission mode, the applied sub-system address and the selected command code are sensed and loaded into an internal data latch. In contrast to the command code, the sub-system is sensed only within the first scan cycle. If the applied sub-system address is changed while the command key is pressed, the transmitted sub-system address is not altered. Multiple key- stroke There are two restriction caused by the special structure of the keyboard matrix: ‧The keys switching to VSS (code numbers 7, 15, 23, 31, 39, 47, 55 and 63) and the keys connected to C5 and C6 are not covered completed by the multiple key protection. If one sense input is switched to VSS, f ourth keys on the same sense line are ignored , i.e. the command code corresponding to “ key to VSS ” is transmitted. ‧C5 and C6 are not protected against multiple key – stroke on the same row driver line, because this condition has been used for the definition of additional code (code number 56 to 63). Output Sequence The output operation will start when the selected code is found. A burst of pulses , including the latched address and command codes , is generated at the output Dout as a key is pressed. The format of the output pulse train is given in Figure 1. The operation is terminated by releasing the key or if more than one key is pressed at the same time. Once a sequence is started the transmitted data words will always be completed after the key is released. The toggle bits T0 and T1 are incremented if the key is released for a minimum time T REL. The toggle bit remain unchanged within a multiple key-stroke sequence.

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 Table 1：Pulse Train Timing Mode TO ( ms ) tp ( μs ) tM ( μs ) tML ( μs ) tMH ( μs) tW ( ms ) Flashed 2.53 8.8 ─ ─ ─ 121 Modulated 2.53 ─ 26.4 17.6 8.8 121 Fosc 455KHz tOSC = 2.2μs tp 4 x tOSC Flashed pulse width tM 12 x tOSC Modulation period tML 8 x tOSC Modulation period low tMH 4 x tOSC Modulation period high tW 55296 x tOSC Word distance TO 1152 x tOSC Basic unit of pulse distance The following number of pulses may be selected by Metal option ：N = 8 , 12 , 16. Note：The different dividing ratio for To and tW between flash mode and carrier mode is obtained by changing the module of a particular divider by 3 during flash mode to divide by 4 during carrier mode. This allows the use of a 600KHz ceramic resonator during carrier mode to obtain a better noise immunity for the receiver without a significant change in To and tW. For first samples, the correct divider ration is obtained by a metal mask option. For final parts, this is automatically done together with the selection of flash- / carrier mode. Table 2：Pulse Train Separation ( tb ) Code tb Logic “ 0 “ 2 x To Logic “ 1 “ 3 x To Toggle bit time 2 x To or 3 x To Reference time 3 x To Table 3：Transmission mode and sub-system address selection. The sub-system address and the transmission mode are defined by connecting the ADRM input to one or more driver outputs ( R0 to R6 ) of the key matrix. If more than one driver is connected to ADRM, they must be decoupled by diodes. Sub-system address Driver R0 ~ R6Mode # S2 S1 S0 0 1 2 3 4 5 6 0 1 1 1 O 1 0 0 0 O O 2 0 0 1 O O 3 0 1 0 O O 4 0 1 1 O O 5 1 0 0 O O Flashed 6 1 0 1 O O 0 1 1 1 1 0 0 0 O 2 0 0 1 O 3 0 1 0 O 4 0 1 1 O 5 1 0 0 O Modulated 6 1 0 1 O O = Connected to ADRM Blank = not Connected to ADRM

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 Table 4： KEY CODE DATA CODE KEY R0 R1 R2 R3 R4 R5 R6 VSS Cn A B C D E F K0 O 0 0 0 0 0 0 K1 O 1 0 0 0 0 0 K2 O 0 1 0 0 0 0 K3 O 1 1 0 0 0 0 K4 O 0 0 1 0 0 0 K5 O 1 0 1 0 0 0 K6 O 0 1 1 0 0 0 K7 O 1 1 1 0 0 0 K8 O 0 0 0 1 0 0 K9 O 1 0 0 1 0 0 K10 O 0 1 0 1 0 0 K11 O 1 1 0 1 0 0 K12 O 0 0 1 1 0 0 K13 O 1 0 1 1 0 0 K14 O 0 1 1 1 0 0 K15 O 1 1 1 1 0 0 K16 O 0 0 0 0 1 0 K17 O 1 0 0 0 1 0 K18 O 0 1 0 0 1 0 K19 O 1 1 0 0 1 0 K20 O 0 0 1 0 1 0 K21 O 1 0 1 0 1 0 K22 O 0 1 1 0 1 0 K23 O 1 1 1 0 1 0 K24 O 0 0 0 1 1 0 K25 O 1 0 0 1 1 0 K26 O 0 1 0 1 1 0 K27 O 1 1 0 1 1 0 K28 O 0 0 1 1 1 0 K29 O 1 0 1 1 1 0 K30 O 0 1 1 1 1 0 K31 O 1 1 1 1 1 0

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 KEY CODE DATA CODE KEY R0 R1 R2 R3 R4 R5 R6 VSS Cn A B C D E F K32 O 0 0 0 0 0 1 K33 O 1 0 0 0 0 1 K34 O 0 1 0 0 0 1 K35 O 1 1 0 0 0 1 K36 O 0 0 1 0 0 1 K37 O 1 0 1 0 0 1 K38 O 0 1 1 0 0 1 K39 O 1 1 1 0 0 1 K40 O 0 0 0 1 0 1 K41 O 1 0 0 1 0 1 K42 O 0 1 0 1 0 1 K43 O 1 1 0 1 0 1 K44 O 0 0 1 1 0 1 K45 O 1 0 1 1 0 1 K46 O 0 1 1 1 0 1 K47 O 1 1 1 1 0 1 K48 O 0 0 0 0 1 1 K49 O 1 0 0 0 1 1 K50 O 0 1 0 0 1 1 K51 O 1 1 0 0 1 1 K52 O 0 0 1 0 1 1 K53 O 1 0 1 0 1 1 K54 O 0 1 1 0 1 1 K55 O 1 1 1 0 1 1 K56 O 0 0 0 1 1 1 K57 O 1 0 0 1 1 1 K58 O 0 1 0 1 1 1 K59 O 1 1 0 1 1 1 K60 O 0 0 1 1 1 1 K61 O 1 0 1 1 1 1 K62 O 0 1 1 1 1 1 K63 O 1 1 1 1 1 1

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 OUTPUT WAVEFORMS Figure 1：Data format of Dout output ; REF = Reference time ; T0 and T1 = Toggle bits ; S0 , S1and S2 = System address ; A , B , C , D , E and F = Command bits. ( a ) Flash mode ：transmission with 2 toggle bits and 3 address bits , followed by 6 command bits ( pulses are flashed ). Flashed pulse ( b ) Modulated mode ：transmission with reference time , 1 toggle bit and 3 address bits , followed by 6 command bits (pulses are modulated ). Modulated pulse 【 tPW = ( 5 X tM ) + tMH 】 tP tb tMLtMH tPW tM tb L bit data T0T1 C 1 0 B 0 00 A T1 H S1 ES0 DFS2 101 0001 tw tb L bit data T0Ref C 1 0 B 1 00 A Ref H S1 ES0 DFS2 101 1001 tw tb

一華半導體股份有限公司MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 APPLICATION DIAGRAM 參考電路圖 * All specs and applications shown above subject to change without prior notice. ( 以上電路及規格僅供參考 ,本公司得逕行修正 ) VSS OSCO OSCI ADRM M3014P 1 20 10 11 DOUT K53 K61 K55 K39 K56 K57 K58 K59 K60 K62 K63 K48 K49 K50 K51 K52 K54 K40 K41 K42 K43 K44 K45 K46 K32 K33 K34 K35 K36 K37 K38 K47 K24 K25 K26 K27 K28 K29 K30 K31 K16 K17 K18 K19 K20 K21 K22 K23 K8 K9 K10 K11 K12 K13 K14 K0 K1 K2 K3 K4 K5 K6 K7 K15 VDD VDD 100Ω 100Ω