M2FL20U SHINDENGEN | Alldatasheet
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Single Diode Super Fast Recovery Diode MSH OUTLINE Weight 0.0722 (Typ) 200V 1 5A DI-ER—F i . Cathode mark \\ /Type No. ———— Lyre No. , 7 2U) . SMD © Small SMD 1711. ° be MW @ STA * Low Noise Zi \\J® , trr=35ns © trr=35ns / \\ ES phat (A) #1 Ve=0.92V * Low Ve=0.92V corer arenas
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© R7B.OA * Home Appliance, Office Automation : ome © Communication SHER OV TSMC Webt 4 b LEH 4 A FA OT TE, EBM PSUs. HAVES OC BHATIA BRS CE BO For details of the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Serna Connector Mw RATINGS @XtRATK Absolute Maximum Ratings (Oe TI=25'C) HOA me] Re mF Tee Item Symbol] Conditions Type No. M2FL20U Unit Fernie aS c age anpeve Poste f= 8es0 Le. AGEL ; th) ae To ‘SUH Z IE, BEL Aa SO glass-epory substrate A Average Rectified Forward Current 50Hz sine wave, Resistance load |" _, p § F EBLE ‘ AR — MARE ik 50Hz ESKI, JER DK LIA 7 AEA BA, T} = 25°C 50 A Peak Surge Forward Current PSM __| 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25°C @B RH MAH Electrical Characteristics (HEO*VA TI=25C) LE _ PAM AME Mes votage Ie=15A, pulse tween V Pa TMF MB / Junction to ambient Ty FABER On giass-epoxy substrate MAX 120 AKRBRABIt NRRROLH SMO LICMETSELEMSVET. All specifications are subject to change without notice. 150 (W832) wwwshindengen.co.jp/productisemil
Super FRD (Single) Small SMD M2FL20U M#${2B1 CHARACTERISTIC DIAGRAMS ARISE IAB AR AHR CARY ESR Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 0 2 2 2 -Reeeranlw al) 5 ee S A = 5} y= 1300 ay = al ipa H Pris itive Meo ly Hee 7 + ji} | oY CSE
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ic ee) oi, SS 5 n- scwax—| |e VG 2 Pl § T= BCITYP) 05 yy & Phe] * 3 ? a a 0] 5 YY ~ 10) LETT | tics] 1 1A | JSR Bin Oi Uy T fs 2 or TH z 25 Gry re a Forward Voltage Vr (V) Average Rectified Forward Current Io (A) Number of Cycles (cycle) F4V-F4IN—T Talo F4V—-F4IN—T Talo gam Derating Curve Ta-lo Derating Curve Ta-lo Junction Capacitance 25 2 2m 2 OR bss tru! le & TUT | le N 1 27 ww BENT | 2 at SA we DN) |S wo OS 2 lio 71" 2 IN “17 > NY b-— St (8, 7] ed £ SG Nee | NU SN] ‘N 8 SCO, ‘ NS 2 just Tt ESS 2 hut il | : Sw LE SN < \\ < ins al a aa a aaa _2 5 0 as 0 an Ambient Temperature Ta CC) Ambient Temperature Ta (°C) Reverse Voltage Vr (V) ; + Sine wave (3 50Hz Cilii LTH EF» 2 BUH? sine wave IS Used for measurements. 1H OBL OAL ARMY 1 7 EB TBD ET Typical LRM SED ERL TET. % Semiconductor products generally have characteristic variation. ‘Typical is a statistical average of the device's ability www.shindengen.co.jp/product/semi! (832) 151