M28ST SECOS | Alldatasheet
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Technical content
1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 29-May-2012 Rev.A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE /circle6 High DC Current Gain and Large Current Capability CLASSIFICATION OF h FE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300~550 500~700 650~1000 ABSOLUTE MAXIMUM RATINGS at Ta = 25 °C Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 40 V Collector to Emitter Voltage V CEO 20 V Emitter to Base Voltage V EBO 6 V Collector Currrent I C 1 A Total Power Dissipation P D 0.625 W Thermal Resistance From Junction R θJA 200 ° C / W Junction, Storage Temperature T J, T STG 150, -55~150 ° C
ELECTRICAL CHARACTERISTICS
(T A =25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V I C =100 µA, I E =0 Collector-emitter Breakdown Voltage V(BR)CEO 20 - - V I C =1mA, I B =0 Emitter-base Breakdown Voltage V (BR)EBO 60 - - V I E =100 µA, I C =0 Collector Cut-off Current I CBO - - 1 µA VCB =40V, IE=0 Collector Cut-off Current I CEO - - 5 µA VCE =20V, I B = 0 Emitter Cut-off Current I EBO - - 0.1 µA VEB =5V, I C = 0 DC Current Gain h FE 290 - - V CE =1V, I C =1mA 300 - 1000 V CE =1V, I C =100mA 300 - - V CE =10V, I C =300mA Collector-emitter Saturation Voltage VCE(sat) - - 0.55 V I C =600mA, IB =20mA Transition Frequency f T 100 - - MHz V CE =10V, I E=50mA, f=30MHz TO-92 11 11 Emitter 22 22 Collector 33 33 Base REF. Mill imeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1. 10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76