M28S LUGUANG | Alldatasheet
Document overview
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Technical content
NPN Silicon Epitaxial Planar Transistor M 2 8 S
FEATURES
Linearity. z High DC current gain. z High Power Dissipation.
APPLICATIONS
z Audio output driver amplifier. z General purpose switch.
ORDERING INFORMATION
Type No. Marking Package Code M 2 8 S 2 8 S S O T - 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 1 A I B Base current 0.4 A P C Collector Power Dissipation 200 mW T T stg Junction and Storage Temperature -55 to +150 ℃ http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 6 V Collector cut-off current I CBO V CB =35V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =1V,I C =1mA V CE =1V,I C =0.1A V CE =1V,I C =0.3A V CE =1V,I C =0.5A 290 300 300 300 1000 Collector-emitter saturation voltage V CE(sat) I C =600mA, I B =20mA 0.55 V Transition frequency f T V CE =10V, I C =50mA, f=1MHz 100 MHz Collector output capacitance C ob V CB =10V,I E =0,f=1MHz 9 pF CLASSIFICATION OF h FE2 Rank B C D Range 300-550 500-700 650-1000 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G
@ Ta=25℃ unless otherwise specified Device Package Shipping M28S SOT-23 3000/Tape&Reel NPN Silicon Epitaxial Planar Transistor M 2 8 S http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1