M28S UMW | Alldatasheet
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Technical content
M28S TRANSISTOR (NPN)
FEATURES
Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 5 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=1mA 290 hFE(2) VCE=1V, IC=100mA 300 1000 hFE(3) VCE=1V, IC=300mA 300 DC current gain hFE(4) VCE=1V, IC=500mA 300 Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=20mA 0.55 V Transition frequency fT VCE=10V,IE=50mA, f=1MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 9 pF CLASSIFICATION OF hFE(2) RANK B C D RANGE 300–550 500–700 650–1000 MARKING 28S SOT–23 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Plastic-Encapsulate Transistors UMW R UMW M28S 1www.umw-ic.com 友台半导体有限公司
0.1 100 1000 11 0 1 0 0 100 1000 0 150125100755025 100 150 200 250 1000100101 100 1000 0.1 1 10 100 1000 1000100101 100 1000 012345 100 120 140 160 1000100101 100 1000 VCE=1V COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) ICVBE —— =100Ta ℃ a=25T ℃ ICfT —— TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=10V Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— T a COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) ICVBEsat —— β=30 0Ta=10 ℃ Ta=25℃ 2000 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) VCB/ VEBCob/ Cib —— f=1MHz IE=0/IC=0 Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100℃ Ta=25℃ VCE=1V IChFE —— 2000 200uA 180uA 160uA 140uA uA120 100uA 80uA 60uA 40uA IB=20uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic COMMON EMITTER Ta=25℃ β=30 Ta=100℃ Ta=25℃ COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat —— 2www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW M28S
Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. www.umw-ic.com 3 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW M28S