M28S DCCOM | Alldatasheet
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Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp.
Description
Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications. Pinning 3 = Emitter 1 = Collector 2 = Base Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.25 A Base Current IB 0.4 A Total Power Dissipation PD 850 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=100µA, IC=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=35V, IE=0 EmitterCutoff Current IEBO - - 0.1 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.55 V IC=600mA, IB=20mA hFE1 290 - - - IC=1mA, VCE=1V DC Current Gain(1) hFE2 300 - 1000 - IC=0.1A, VCE=1V hFE3 300 - - - IC=0.3A, VCE=1V hFE4 300 - - - IC=0.5A, VCE=1V Transition Frequency fT 100 - - MHz IC=50mA, VCE=10V, f=1MHz Output Capacitance Cob - 9 - pF VCB=10V, f=1MHz, IE=0
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank B C D Range 300~550 500~700 650~1000 Classification of hFE2