M28F201 STMICROELECTRONICS | Alldatasheet
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Technical content
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
W DQ0-DQ7 VPPVCC M28F201 G E VSS Figure 1. Logic Diagram Table 1. Signal Names
DESCRIPTION
The M28F201 FLASH Memory product is a non- volatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor inter- face. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
W A16 DQ7 A12 A14
32 VPP
G E VSS Figure 2A. LCC Pin Connections DQ0 A4 A3 A13 A10 DQ7 A14 A11 G E DQ5 DQ1 DQ2 DQ3 DQ4 DQ6 A17 W A16 A12 VPP VCC A15 AI00639C M28F201 (Normal) 16 17 VSS Figure 2B. TSOP Pin Connections DEVICE OPERATION The M28F201 FLASH Memory product employs a technology similar to a 2 Megabit EPROM but add to the device functionality by providing electrical erasure and programming. These functions are managed by a command register. The functions that are addressed via the command register de- pend on the voltage applied to the V PP , program voltage, input. When VPP is less than or equal to 6.5V, the command register is disabled and the M28F201 functions as a read only memory provid- ing operating modes similar to an EPROM (Read, Output Disable, Electronic Signature Read and Standby). When V PP is raised to 12V the command register is enabled and this provides, in addition, Erase and Program operations. READ ONLY MODES, V PP ≤ 6.5V For all Read Only Modes, except Standby Mode, the Write Enable input W should be High. In the Standby Mode this input is ’don’t care’. Read Mode. The M28F201 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data on to the output, independantof the device selection. DQ0 A4A3 A13 A10 DQ7 A14 A11G E DQ5 DQ1 DQ2 DQ3 DQ4 DQ6 A17 W A16 A12 VPP VCC A15 AI00640D M28F201 (Reverse) 16 17 VSS 321 Figure 2C. TSOP Reverse Pin Connections M28F201
periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents . Table 2. Absolute Maximum Ratings Table 4. Electronic Signature
- Refer also to the Command table.
Table 3. Operations(1)
- Refer also to the Electronic Signature table.
Table 5. Commands (1) state, independant of the Output Enable (G) input. can also be accessed in Read/Write modes. any number of read operations to output data. manufactureror device codes. currents until the operations are terminated. to start a Verify or Reset Mode operation.
Note: 1. Not 100% tested. Characterisation Data available. Table 8. DC Characteristics
Table 9. Read Only Mode AC Characteristics first Erase Verify Mode stops the Erase operation. contents in a second read cycle.
Figure 7. Electronic Signature Command Waveforms second cycle starts the programming operation. command register (for example Read).
-70 -90 VCC =5 V± 10% V CC =5 V± 10% EPROM Interface EPROM Interface Min Max Min Max tVPHEL VPP High to Chip Enable Low 1 1 µs tVPHWL VPP High to Write Enable Low 1 1 µs tWHWH3 tWC Write Cycle Time (W controlled) 70 90 ns tEHEH3 tWC Write Cycle Time (E controlled) 70 90 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tAVEL Address Valid to Chip Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 30 45 ns tELAX Chip Enable Low to Address Transition 30 45 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLEL Write Enable Low to Chip Enable Low 0 0 ns tGHWL Output Enable High to Write Enable Low 0 0 µs tGHEL Output Enable High to Chip Enable Low 0 0 µs tDVWH tDS Input Valid to Write Enable High 30 45 ns tDVEH Input Valid to Chip Enable High 30 45 ns tWLWH tWP Write Enable Low to Write Enable High (Write Pulse) 30 45 ns tELEH Chip Enable Low to Chip Enable High (Write Pulse) 50 60 ns tWHDX tDH Write Enable High to Input Transition 10 10 ns tEHDX Chip Enable High to Input Transition 10 10 ns tWHWH1 Duration of Program Operation (W contr.) 10 10 µs tEHEH1 Duration of Program Operation (E contr.) 10 10 µs tWHWH2 Duration of Erase Operation (W contr.) 9.5 9.5 ms tEHEH2 Duration of Erase Operation (E contr.) 9.5 9.5 ms tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tEHWH Chip Enable High to Write Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 10 20 ns tEHEL Chip Enable High to Chip Enable Low 10 20 ns tWHGL Write Enable High to Output Enable Low 6 6 µs tEHGL Chip Enable High to Output Enable Low 6 6 µs tAVQ V tACC Addess Valid to data Output 70 90 ns tELQX (1) tLZ Chip Enable Low to Output Transition 0 0 ns tELQV tCE Chip Enable Low to Output Valid 70 90 ns tGLQX (1) tOLZ Output Enable Low to Output Transition 0 0 ns tGLQV tOE Output Enable Low to Output Valid 25 30 ns tEHQZ (1) Chip Enable High to Output Hi-Z 25 30 ns tGHQZ (1) tDF Output Enable High to Output Hi-Z 25 30 ns tAXQX tOH Address Transition to Output Transition 0 0 ns Note: 1. Sampled only, not 100% tested Table 10A. Read/Write Mode AC Characteristics, W and E Controlled (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M28F201
-120 -150 VCC =5 V± 10% V CC =5 V± 10% EPROM Interface EPROM Interface Min Max Min Max tVPHEL VPP High to Chip Enable Low 1 1 µs tVPHWL VPP High to Write Enable Low 1 1 µs tWHWH3 tWC Write Cycle Time (W controlled) 120 150 ns tEHEH3 tWC Write Cycle Time (E controlled) 120 150 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tAVEL Address Valid to Chip Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 50 50 ns tELAX Chip Enable Low to Address Transition 60 80 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLEL Write Enable Low to Chip Enable Low 0 0 ns tGHWL Output Enable High to Write Enable Low 0 0 µs tGHEL Output Enable High to Chip Enable Low 0 0 µs tDVWH tDS Input Valid to Write Enable High 50 50 ns tDVEH Input Valid to Chip Enable High 50 50 ns tWLWH tWP Write Enable Low to Write Enable High (Write Pulse) 50 60 ns tELEH Chip Enable Low to Chip Enable High (Write Pulse) 70 80 ns tWHDX tDH Write Enable High to Input Transition 10 10 ns tEHDX Chip Enable High to Input Transition 10 10 ns tWHWH1 Duration of Program Operation (W contr.) 10 10 µs tEHEH1 Duration of Program Operation (E contr.) 10 10 µs tWHWH2 Duration of Erase Operation (W contr.) 9.5 9.5 ms tEHEH2 Duration of Erase Operation (E contr.) 9.5 9.5 ms tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tEHWH Chip Enable High to Write Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 ns tEHEL Chip Enable High to Chip Enable Low 20 20 ns tWHGL Write Enable High to Output Enable Low 6 6 µs tEHGL Chip Enable High to Output Enable Low 6 6 µs tAVQ V tACC Addess Valid to data Output 120 150 ns tELQX (1) tLZ Chip Enable Low to Output Transition 0 0 ns tELQV tCE Chip Enable Low to Output Valid 120 150 ns tGLQX (1) tOLZ Output Enable Low to Output Transition 0 0 ns tGLQV tOE Output Enable Low to Output Valid 35 40 ns tEHQZ (1) Chip Enable High to Output Hi-Z 30 35 ns tGHQZ (1) tDF Output Enable High to Output Hi-Z 30 35 ns tAXQX tOH Address Transition to Output Transition 0 0 ns Note: 1. Sampled only, not 100% tested Table 10B. Read/Write Mode AC Characteristics, W and E Controlled (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M28F201
Figure 8. Erase Set-up and Erase Verify Commands Waveforms, W Controlled
Figure 9. Erase Set-up and Erase Verify Commands Waveforms, E Controlled
Figure 10. Program Set-up and Program Verify Commands Waveforms - W Controlled
Figure 11. Program Set-up and Program Verify Commands Waveforms - E Controlled
ORDERING INFORMATION SCHEME Operating Voltage F5 V Speed -70 70 ns -90 90 ns -120 120 ns -150 150 ns Power Supplies blank V CC ± 10% XV CC ± 5% Package K PLCC32 N TSOP32 8 x 20 mm Option R Reverse Pinout TR Tape & Reel Packing Temperature Range 1 0 to 70 °C 3 –40 to 125 °C 6 –40 to 85 °C Example: M28F201 -70 X N 1 TR Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options(Speed, Package, etc...) or for further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you. M28F201
D Ne E1 E Nd CP B D2/E2 e A Symb mm inches Typ Min Max Typ Min Max A 2.54 3.56 0.100 0.140 A1 1.52 2.41 0.060 0.095 B 0.33 0.53 0.013 0.021 B1 0.66 0.81 0.026 0.032 D 12.32 12.57 0.485 0.495 D1 11.35 11.56 0.447 0.455 D2 9.91 10.92 0.390 0.430 E 14.86 15.11 0.585 0.595 E1 13.89 14.10 0.547 0.555 E2 12.45 13.46 0.490 0.530 N3 2 3 2 Nd 7 7 Ne 9 9 CP 0.10 0.004 PLCC32 Drawing is not to scale. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular M28F201
E CP B e A N/2 D DIE C LA1 α Symb mm inches Typ Min Max Typ Min Max A 1.20 0.047 A1 0.05 0.17 0.002 0.006 A2 0.95 1.50 0.037 0.059 B 0.15 0.27 0.006 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 7.90 8.10 0.311 0.319 L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N3 2 3 2 CP 0.10 0.004 TSOP32 Drawing is not to scale. TSOP32 Normal Pinout - 32 lead Plastic Thin Small Outline, 8 x 20mm M28F201
A 1.20 0.047 A1 0.05 0.17 0.002 0.006 A2 0.95 1.50 0.037 0.059 B 0.15 0.27 0.006 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 7.90 8.10 0.311 0.319 L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N3 2 3 2 CP 0.10 0.004 TSOP32 TSOP32 Reverse Pinout - 32 lead Plastic Thin Small Outline, 8 x 20mm TSOP-b E CP B e A N/2 D DIE C LA1 α Drawing is not to scale. M28F201
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. M28F201