M27W201_06 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Summary description
  • 2 Device Description
  • 2.1 Read mode
  • 2.2 Standby mode
  • 2.3 Two-line output control
  • 2.4 System considerations
  • 2.5 Programming
  • 2.6 Presto II programming algorithm
  • 2.7 Program Inhibit
  • 2.8 Program Verify
  • 2.9 Electronic Signature
  • 2.10 Erasure operation (applies to UV EPROM)
  • 3 Maximum ratings
  • 4 DC and AC parameters
  • 5 Package mechanical data
  • 6 Part numbering
  • 7 Revision history

Features

■ 2.7V to 3.6V Low Voltage in Read Operation ■ Access Time: –7 0 n s a t VCC = 3.0V to 3.6V –8 0 n s a t VCC = 2.7V to 3.6V ■ Pin Compatible with M27C2001 ■ Low Power Consumption: – 15 µA Max. Standby Current – 15 mA Max. Active Current at 5 MHz ■ Programming Time: 100 µs/byte ■ High Reliability CMOS Technology – 2,000V ESD Protection – 200 mA Latch-up Protection Immunity ■ Electronic Signature – Manufacturer Code: 20h – Device Code: 61h ■ ECOPACK® packages available 32 32 FDIP32W (F) PDIP32 (B) PLCC32 (C) TSOP32 (N) 8 x 20 mm TSOP32 (NZ) 8 x 14 mm

1 Summary description

requiring large data or program storage and is organised as 262,144 by 8 bits. size of the battery or an increase in the time between battery recharges. written to the device by following the programming procedure. ECOPACK is an ST trademark. ECOPACK® specifications are available at: www.st.com. signals connected to this device. Figure 1. Logic Diagram

Figure 2. DIP Connections Table 1. Signal Descriptions

Figure 3. LCC Connections Figure 4. TSOP Connections

1 A16

32 VPP

2 Device Description

on A9 for Electronic Signature. Table 1. Operating Modes Note: X = V IH or VIL, VID = 12V ± 0.5V.

2.1 Read mode

been low and the addresses have been stable for at least tAVQV -tGLQV .

2.2 Standby mode

Table 2. Operating modes

M27W201 Device Description

2.3 Two-line output control

Because EPROMs are usually used in larger memory arrays, this product features a 2-line control function which accommodates the use of multiple memory connection. The two line control function allows:

  • the lowest possible memory power dissipation,
  • complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.

2.4 System considerations

The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, I CC , has three segments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E . The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic capacitor be used on every device between V CC and VSS . This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used between V CC and VSS for every eight devices. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.

2.5 Programming

The M27W201 has been designed to be fully compatible with the M27C2001 and has the same electronic signature. As a result the M27W201 can be programmed as the M27C2001 on the same programming equipment applying 12.75V on V PP and 6.25V on VCC by the use of the same PRESTO II algorithm. When delivered (and after each ‘1’s erasure for UV EPROM), all bits of the M27W201 are in the '1' state.Data is introduced by selectively programming '0's into the desired bit locations. Although only '0's will be programmed, both '1's and '0's can be present in the data word. The only way to change a ‘0’ to a ‘1’ is by die exposure to ultraviolet light (UV EPROM). The M27W201 is in the programming mode when V PP input is at 12.75V, E is at VIL and P is pulsed to VIL. The data to be programmed is applied to 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. VCC is specified to be 6.25V ± 0.25V.

2.6 Presto II programming algorithm

provides the necessary margin to each programmed cell. Figure 5. Programming flowchart

2.7 Program Inhibit

2.8 Program Verify

2.9 Electronic Signature

to Q0. Note that the M27W201 and M27C2001 have the same identifier byte.

2.10 Erasure operation (applies to UV EPROM)

  1. The erasure time with this dosage is approximately 15 to 20

filter on their tubes which should be removed before erasure. Table 3. Electronic Signature

3 Maximum ratings

Table 4. Absolute Maximum Ratings (1)

  1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
  2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than

4 DC and AC parameters

Table 5. Read Mode DC Characteristics (1)

  1. V CC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .
  2. Maximum DC voltage on Output is VCC +0.5V.

Table 6. Programming Mode DC Characteristics (1)

  1. V CC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .

Figure 8. Read Mode AC Waveforms Table 9. Read Mode AC Characteristics (1)

  1. V CC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .
  2. Speed obtained with High Speed AC measurement conditions.
  3. Sampled only, not 100% tested.

Figure 9. Programming and Verify Modes AC Waveforms Table 10. Programming Mode AC Characteristics (1)

  1. V CC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .
  2. Sampled only, not 100% tested.

5 Package mechanical data

Figure 10. FDIP32WA package outline Table 11. FDIP32WA package mechanical data

Figure 11. PDIP32 package outline Table 12. PDIP32 package mechanical data

Figure 12. PLCC32 package outline Table 13. PLCC32 package mechanical data

Figure 13. TSOP32 package outline Table 14. TSOP32 package mechanical data

Figure 14. TSOP32 package outline Table 15. TSOP32 package mechanical data

6 Part numbering

Table 16. Ordering Information Scheme of this device, please contact the STMicroelectronics Sales Office nearest to you.

  1. High Speed, see AC Characteristics section for further information.
  2. This speed also guarantees 70ns access time at VCC = 3.0V to 3.6V.
  3. These speeds are replaced by the 100ns.
  4. Packages option available on request. Please contact STMicroelectronics local Sales Office.

7 Revision history

Table 17. Document revision history 12-Apr-2006 4 Converted to new template. Added ECOPACK® information.