M22100 STMICROELECTRONICS | Alldatasheet

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4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY

(Plastic Package) ORDER CODES : M22100 B1 M22100 F1 F (Ceramic Package) FUNCTIONAL DIAGRAM .LOW ON RESISTANCE – 75 Ω TYP. AT VDD =1 2V .”BUILT-IN” CONTROL LATCHES .LARGE ANALOG SIGNAL CAPABILITY ± VDD /2 .TRANSMITS SIGNALS UP TO 10 MHz .MATCHED SWITCH CHARACTERISTICS ΔR ON =1 8Ω TYP. AT VDD – VSS =1 2V . .HIGH LINEARITY : – 0.5 % DISTORTION (typ.) AT f = 1 KHz, VIN = 5 V PEAK TO PEAK, VDD - VSS =1 0V ,RL =1 0KΩ .STANDARD COS/MOS NOISE IMMUNITY .100 % TESTED FOR QUIESCENT CURRENT The M22100 combines a 4 x 4 array of crosspoints (transmission gates) with a4-line-to-16-line decoder and 16 latch circuits. Any one of the sixteen trans- mission gates (crosspoints) can be selected by ap- plying the appropria te four line address. The selected transmission gate can be turned on or off by applying a logical one or zero, respectively, to the data input and strobing the strobe input to a logical one. Any number of the transmission gates can be ON simultaneously. When the required operating power is applied to the 22100, the states of the 16 switches are indetermi- nate. Therefore, all switches must be turned off by putting the strobe high and data-in-low, and then address- ing all switches in succession.

DESCRIPTION

Address Select Address Select ABCD ABCD

0000 X 1 Y 1 0001 X 1 Y 3

1000 X 2 Y 1 1001 X 2 Y 3

0100 X 3 Y 1 0101 X 3 Y 3

1100 X 4 Y 1 1101 X 4 Y 3

0010 X 1 Y 2 0011 X 1 Y 4

1010 X 2 Y 2 1011 X 2 Y 4

0110 X 3 Y 2 0111 X 3 Y 4

1110 X 4 Y 2 1111 X 4 Y 4

Symbol Parameter Value Unit VDD * Supply Voltage: Ceramic Types Plastic Types -0.5 to +20 -0.5 to +18 V V Vi Input Voltage -0.5 to V DD + 0.5 V II DC Input Current (any one input) ± 10 mA Ptot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range 200 100 mW mW T op Operating Temperature: Ceramic Types Plastic Types -55 to +125 -40 to +85 oC oC Tstg Storage Temperature -65 to +150 oC Stressesabove those listedunder ”Absolute Maximum Ratings” may cause permanent damage to thedevice. This isa stress ratingonly and functional opera tion of the device at these or any other cond itions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VDD Supply Voltage: Ceramic Types Plastic Types 3t o1 8 3t o1 5 V V VI Input Voltage 0 to V DD V Top Operating Temperature: Ceramic Types Plastic Types -55 to +125 -40 to +85 oC oC LOGIC DIAGRAM M22100

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Symbol Parameter Test Conditios Value UnitVI (V) VDD (V) TLOW *2 5 oCT HIGH * CROSSPOINT IL Quiescent Supply Current F1 5 0.04 5 150 µA 10 0.04 10 300 15 0.04 20 600 20 0.08 100 3000 5 0.04 20 150 10 0.04 40 300 15 0.04 80 600 R ON On Resistance F1 Any Switch 5 450 225 1250 1625 Ω 10 135 85 180 230 12 100 75 135 175 15 70 65 95 125 B1 V IS = 0 to VDD 5 1000 225 1250 1440 10 145 85 180 205 12 110 75 135 155 15 75 65 95 110 ΔON Resistance ΔR ON (Between any two channels) 53 5 Ω10 20 12 18 15 15 OFF Channel Leakage Current F1 All Switch OFF 0/18 18 ±0.1 ±10 -3 ±0.1•± 1 µA CONTROL V IL Input Low Voltage OFF Switch IL < 0.2µA 5 1.5 1.5 1.5 V10 3 3 3 15 4 4 4 VIH Input High Voltage ON Switch see RON Characteristics 5 3.5 3.5 3.5 V10 7 7 7 15 11 11 11 II Input Current F1 Any Control Input C I Input Capacitance Any Input 5 7.5 pF

  • Determined by minimum feasible leakage measurement for automatic testing *T LOW =- 5 5oCf o rHCC device: -40oC forHCF device. *T HIGH =+ 1 2 5oCf o rHCC device: +85oC forHCF device. The Noise Margin for both ”1” and ”0” level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. withVDD =1 5V M22100

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =2 5 oC, CL = 50 pF, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions Value Unitfi (KHz) R L (KW) VIS • (V) VDD (V) Min. Typ. Max. CROSSPOINT tPHL tPLH Propagation Delay Time Address or Strobe Inputs to Output 5 5 30 60 ns10 10 15 30 15 15 10 20 Frequency Response (Any Switch ON) 1 1 5 10 40 MHz Sine Wave Input Log VOS VIS =− 3 dB Sine Wave Distortion 1 1 5 10 0.5 % Feedthrough (All Switches OFF) 1.6 1 5 10 80 dB Sine Wave Input Frequency for Signal Crosstalk Attenuation of 40 dB 1 10 10 1.5 MHz Sine Wave Input Frequency for Signal Crosstalk Attenuation of 110 dB 1 10 10 0.1 KHz Sine Wave Input C Capacitance Xn to Ground Yn to Ground Feedthrough 5-15 18 0.4 pF CONTROLS tPHZ Propagation Delay Time Strobe to Output (Switch Turn-ON to High Level) R L =1K Ω C L =5 0p F tr,tf =2 0n s See Figure 1 5 500 1000 ns10 230 460 15 145 290 tPZH Propagation Delay Time Data-In to Output (Switch Turn-ON to High Level) See Figure 2 5 500 1000 ns10 220 440 15 135 270 tPZH Propagation Delay Time Address to Output (Switch Turn-ON to High Level) See Figure 3 5 480 960 ns10 225 450 15 150 300 t PHZ Propagation Delay Time Strobe to Output (Switch Turn-OFF) See Figure 1 5 450 900 ns10 200 400 15 165 330 t PZL Propagation Delay Time Data-In to Output (Switch Turn-ON to Low Level) See Figure 2 5 500 1000 ns10 220 440 15 135 270 tPHZ Propagation Delay Time Address to Output (Switch Turn-OFF) See Figure 3 5 425 850 ns10 190 380 15 145 290 t setup Setup Time Data-In to Strobe, Address 5 200 400 ns10 80 160 15 50 100

  • Peak to peak voltage symmetrical about VDD /2 M22100

DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Value Unitfi (KHz) R L (KW) VIS • (V) VDD (V) Min. Typ. Max. CONTROLS (continued) thold Hold Time Data-In to Strobe, Address R L =1K Ω C L =5 0p F tr,tf =2 0n s 5 180 ns10 110 15 35 fφ Switching Frequency 5 0.6 1.2 MHz10 1.6 3.2 15 2.5 5 tW Strobe Pulse Width 5 300 600 ns10 120 240 15 90 180 Control Crosstalk Data-In, Address, or Storbe to Output 10 10 10 75 mV (peak)

  • Peak to peak volatge symmetrical about VDD /2 Typical ON Resistance vs. Input Signal Voltage at VDD =–V SS = 2.5 V. Typical ON Resistance vs. Input Signal Voltage at VDD =–V SS =5V . M22100

Typical ON Resistance vs. Input Signal Voltage at VDD =–V SS = 7.5 V. Typical ON Resistance vs.. Input Signal Voltage at Tamb =2 5°C. Typical Swich ON Transfert Characteristics (1 of 16 switches). Typical Swich ON Frequency Response Characteristics. Typical Crosstalk Between switches vs. Signal Frequency. Typical Dynamic Power Dissipation vs. Switching Frequency.. M22100

Quiescent Current. Input Current. Off Switch Input or Output Leakage Current. Dynamic Power Dissipation. Croostalk Between Switch Circuits in the Same Package. M22100

Propagation Delay Time and Waveforms (signal input to signal output, switch ON). Waveforms for Crosstalk (control input to signal output). Figure 1 :Propagation Delay Time and Waveforms (strobe to signal output, switch Turn-ON or Turn- OFF). M22100

Plastic DIP16 (0.25) MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.77 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050 P001C M22100

Ceramic DIP16/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7 0.276 D 3.3 0.130 E 0.38 0.015 e3 17.78 0.700 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053D M22100

DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A M22100

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A M22100