M15F1G1664A

M15F1G1664A ESMT | Alldatasheet

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ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 1/131 DDR3 SDRAM 8M x 16 Bit x 8 Banks DDR3 SDRAM Feature Interface and Power Supply SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant 8n Prefetch Architecture Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS ) Double-data rate on DQs, DQS and DM Data Integrity Auto Refresh and Self Refresh Modes Power Saving Mode Partial Array Self Refresh(PASR) Power Down Mode Signal Integrity Configurable DS for system compatibility Configurable On-Die Termination ZQ Calibration for DS/ODT impedance accuracy via Signal Synchronization Write Leveling via MR settings Read Leveling via MPR Programmable Functions CAS Write Latency (5/6/7/8/9/10/11/12) Additive Latency (0/CL-1/CL-2) Write Recovery Time (5/6/7/8/10/12/14/16) Burst Type (Sequential/Interleaved) Burst Length (BL8/BC4/BC4 or 8 on the fly) Self Refresh Temperature Range(Normal/Extended) Output Driver Impedance (34/40) On-Die Termination of Rtt_Nom(20/30/40/60/120) On-Die Termination of Rtt_WR(60/120) Precharge Power Down (slow/fast) Not Support Write with Auto Precharge for Data Rate 2400Mbps external ZQ pad (240 ohm ± 1%)

Ordering Information

Product ID Max Freq. VDD Data Rate (CL-tRCD-tRP) Package Comments M15F1G1664A–GHBG2C 1200MHz 1.5V DDR3-2400(16-16-16) 96 ball BGA (7.5mmx13.5mm) Pb-free M15F1G1664A–EFBG2C 1066MHz 1.5V DDR3-2133(14-14-14) Pb-free M15F1G1664A–DEBG2C 933MHz 1.5V DDR3-1866 (13-13-13) Pb-free M15F1G1664A–GHBG2CS 1200MHz 1.5V DDR3-2400(16-16-16) 96 ball BGA (7.5mmx13mm) Pb-free M15F1G1664A–EFBG2CS 1066MHz 1.5V DDR3-2133(14-14-14) Pb-free M15F1G1664A–DEBG2CS 933MHz 1.5V DDR3-1866 (13-13-13) Pb-free

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 2/131

Description

The 1Gb Double-Data-Rate-3 (DDR3) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages. DDR3 SDRAM Addressing Configuration M15F1G1664A # of Bank 8 Bank Address BA0 – BA2 Auto precharge A10 / AP BL switch on the fly A12 / BC Row Address A0 – A12 Column Address A0 – A9 Page size 2KB Note: Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered. Page size is per bank, calculated as follows: Page size = 2 COLBITS * ORG / 8 where COLBITS = the number of column address bits ORG = the number of I/O (DQ) bits

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 3/131 Pin Configuration – 96 balls BGA Package < TOP View> See the balls through the package 1 2 3 4 5 6 7 8 9 A VDDQ DQU5 DQU7 DQU4 VDDQ VSS B VSSQ VDD VSS DQSU DQU6 VSSQ C VDDQ DQU3 DQU1 DQSU DQU2 VDDQ D VSSQ VDDQ DMU DQU0 VSSQ VDD E VSS VSSQ DQL0 DML VSSQ VDDQ F VDDQ DQL2 DQSL DQL1 DQL3 VSSQ G VSSQ DQL6 DQSL VDD VSS VSSQ H VREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ J NC VSS RAS CK VSS NC K ODT VDD CAS CK VDD CKE L NC CS WE A10/AP ZQ NC M VSS BA0 BA2 NC VREFCA VSS N VDD A3 A0 A12/BC BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET NC NC A8 VSS

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 4/131 Input / Output Functional Description Symbol Type Function CK, CK  Input Clock: CK and CK are differential clock inputs. All addre ss and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK . CKE Input Clock Enable: CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE low provides Precharge Power-Down and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit and for Self-Refresh entry. CKE is asynchronous for Self-Refresh exit. After VREF has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF must maintain to this input. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK , ODT and CKE are disabled during Power Down. Input buffers, excluding CKE, are disabled during Self-Refresh. CS Input Chip Select: All commands are masked when CS is registered high. CS provides for external rank selection on systems with multiple memory ranks. CS is considered part of the command code. RAS ,CAS ,WE Input Command Inputs: RAS ,CAS and WE (along with CS ) define the command being entered. DM, (DMU, DML) Input Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. BA0 - BA2 Input Bank Address Inputs: BA0, BA1, and BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines which mode register is to be accessed during a MRS cycle. A10 / AP Input Auto-Precharge : A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank addresses. A0 – A12 Input Address Inputs: Provide the row address for Activate commands and the column address for Read/Write commands to select one location out of the memory array in the respective bank. (A10/AP and A12/ BC have additional function as below.) The address inputs also provide the op-code during Mode Register Set commands. A12/BC Input Burst Chop: A12/ BC is sampled during Read and Write commands to determine if burst chop (on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped). ODT Input On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS . The ODT pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 5/131 Symbol Type Function RESET Input Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when RESET is HIGH. RESET must be HIGH during normal operation. RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of VD D, i.e. 1.20V for DC high and 0.30V DQ (DQL, DQU) Input/output Data Inputs/Output: Bi-directional data bus. DQS, DQS (DQSL, DQSL , DQSU, DQSU ) Input/output Data Strobe: output with read data, input with write data. Edge aligned with read data, centered with write data. DQSL corresponds to the data on DQL0- DQL7; QDSU correspond to the data on DQU0-DQU7. The data strobes DQS (DQSL, DQSU) are paired with differential signals DQS (DQSL ,DQSU ), respectively, to provide differential pair signaling to the system during both reads and writes. DDR3 SDRAM supports differential data strobe only and does not support single-ended. NC - No Connect: No internal electrical connection is present. VDDQ Supply DQ Power Supply: 1.5V ± 0.075V VDD Supply Power Supply: 1.5V ± 0.075V VSSQ Supply DQ Ground VSS Supply Ground VREFCA Supply Reference voltage for CA VREFDQ Supply Reference voltage for DQ ZQ Supply Reference pin for ZQ calibration. Note: Input only pins (BA0-BA2, A0-A12,RAS ,CAS ,WE ,CS , CKE, ODT, and RESET ) do not supply termination.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 6/131 Simplified State Diagram Power ON Power Applied Reset Procedure From any State RESET Initialization ZQ Calibration Idle MRS, MPR, Write Levelizing Self Refresh Refreshing SRE SRX REF Activating ACT Precharge Power Down PDE PDX Active Power Down Bank Active Writing Writing Precharging Reading Write Write A Read A Write Read Write A Read A Write Read PRE, PREA PRE, PREA Write A Read A PRE, PREA PDX PDE Reading Read Automatic Sequence Command Sequence MRS ZQCL ZQCL ZQCS State Diagram Command Definitions Abbreviation Function Abbreviation Function Abbreviation Function ACT Active Read RD, RDS4, RDS8 PDE Enter Power-down PRE Precharge Read A RDA, RDAS4, RDAS8 PDX Exit Power-down PREA Precharge All Write WR, WRS4, WRS8 SRE Self-Refresh entry MRS Mode Register Set Write A WRA, WRAS4, WRAS8 SRX Self-Refresh exit REF Refresh RESET Start RESET Procedure MPR Multi-Purpose Register ZQCL ZQ Calibration Long ZQCS ZQ Calibration Short - -

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 7/131 Basic Functionality The DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A12 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device oper- ation.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 8/131 RESET and Initialization Procedure Power-up Initialization sequence The Following sequence is required for POWER UP and Initialization 1. Apply power ( RESET is recommended to be maintained below 0.2 x VDD, all other inputs may be undefined). RESET needs to be maintained for minimum 200 µs with stable power. CKE is pulled “Low” anytime before RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD min must be no greater than 200ms; and during the ramp, VDD>VDDQ and (VDD-VDDQ) <0.3 Volts. - VDD and VDDQ are driven from a single power converter output, AND - The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is limited to 0.95V max once power ramp is finished, AND - VREF tracks VDDQ/2. OR - Apply VDD without any slope reversal before or at the same time as VDDQ. - Apply VDDQ without any slope reversal before or at the same time as VTT & VREF. - The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD on one side and must be larger than or equal to VSSQ and VSS on the other side. 2. After RESET is de-asserted, wait for another 500us until CKE become active. During this time, the DRAM will start internal state initialization; this will be done independently of external clocks. 3. Clock (CK, CK ) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be meeting. Also a NOP or Deselect command must be registered (with tIS set up time to clock) before CKE goes active. Once the CKE registered “High” after Reset, CKE needs to be continuously registered “High” until the initialization sequence is finished, including expiration of tDLLK and tZQ init . 4. The DDR3 DRAM will keep its on-die termination in high impedance state as long as RESET is asserted. Further, the DRAM keeps its on-die termination in high impedance state after RESET de-assertion until CKE is registered HIGH. The ODT input signal may be in undefined state until tIS before CKE is registered HIGH. When CKE is registered HIGH, the ODT input signal may be statically held at either LOW or HIGH. If RTT_NOM is to be enabled in MR1, the ODT input signal must be statically held LOW. In all cases, the ODT input signal remains static until the power up initialization sequence is finished, including the expiration of tDLLK and tZQ init . 5. After CKE being registered high, wait minimum of Reset CKE Exit time, tXPR, before issuing the first MRS command to load mode register. [tXPR=max (tXS, 5tCK)] 6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide “Low” to BA0 and BA2, “High” to BA1) 7. Issue MRS command to load MR3 with all application settings. (To issue MRS command for MR3, provide “Low” to BA2, “High” to BA0 and BA1) 8. Issue MRS command to load MR1 with all application settings and DLL enabled. (To issue “DLL Enable” command, provide “Low” to A0, “High” to BA0 and “Low” to BA1 and BA2) 9. Issue MRS Command to load MR0 with all application settings and “DLL reset”. (To issue DLL reset command, provide “High” to A8 and “Low” to BA0-BA2) 10. Issue ZQCL command to starting ZQ calibration. 11. Wait for both tDLLK and tZQ init completed. 12. The DDR3 SDRAM is now ready for normal operation.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 9/131 Reset and Initialization Sequence at Power- on Ramping (Cont’d) Note: From time point “Td” until “Tk” NOP or DES commands must be applied between MRS and ZQCL commands.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 10/131 Reset Procedure at Stable Power (Cont’d) The following sequence is required for RESET at no power interruption initialization. 1. Asserted RESET below 0.2*VDD anytime when reset is needed (all other inputs may be undefined). RESET needs to be maintained for minimum 100ns. CKE is pulled “Low” before RESET being de-asserted (min. time 10ns). 2. Follow Power-up Initialization Sequence step 2 to 11. 3. The Reset sequence is now completed. DDR3 SDRAM is ready for normal operation. Reset Procedure at Power Stable Condition Note: Note: Note: Note: From time point “Td” until “Tk” NOP or DES commands must be applied between MRS and ZQCL commands.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 11/131 Register Definition Programming the Mode Registers For application flexibility, various functions, features, and modes are programmable in four Mode Registers, provided by the DDR3 SDRAM, as user defined variables and they must be programmed via a Mode Register Set (MRS) command. As the default values of the Mode Registers (MR) are not defined, contents of Mode Registers must be fully initialized and/or re-initial- ized, i.e. written, after power up and/or reset for proper operation. Also the contents of the Mode Registers can be altered by re-executing the MRS command during normal operation. When programming the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset do not affect array contents, which mean these commands can be executed any time after power-up without affecting the array contents. The mode register set command cycle time, tMRD is required to complete the write operation to the mode register and is the minimum time required between two MRS commands shown as below. tMRD Timing The MRS command to Non-MRS command delay, tMOD, is require for the DRAM to update the features except DLL reset, and is the minimum time required from an MRS command to a non-MRS command excluding NOP and DES shown as the following figure. tMOD Timing

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 12/131 Programming the Mode Registers (Cont’d) The mode register contents can be changed using the same command and timing requirements during normal operation as long as the DRAM is in idle state, i.e. all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is high prior to writing into the mode register. If the RTT_NOM Feature is enabled in the Mode Register prior and/or after an MRS Command, the ODT Signal must continuously be registered LOW ensuring RTT is in an off State prior to the MRS command. The ODT Signal may be registered high after tMOD has expired. If the RTT_NOM Feature is disabled in the Mode Register prior and after an MRS command, the ODT Signal can be registered either LOW or HIGH before, during and after the MRS command. The mode registers are divided into various fields depending on the functionality and/or modes. Mode Register MR0 The mode-register MR0 stores data for controlling various operating modes of DDR3 SDRAM. It controls burst length, read burst type, CAS latency, test mode, DLL reset, WR, and DLL control for precharge Power-Down, which include various vendor specific options to make DDR3 SDRAM useful for various applications. The mode register is written by asserting low on CS ,RAS , CAS ,WE , BA0, BA1, and BA2, while controlling the states of address pins according to the following figure.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 13/131 BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 PPD DLL TM RBT CL

MR select BL CAS Latency WR 0 MR0 MR select PPD Slow exit(DLL off) Fast exit(DLL on) No Yes DLL Reset mode Normal Test Nibble Sequential Interleave Read Burst Type 8(Fixed) BC4 or 8(on the fly) BC4(Fixed) MR1 MR2 MR3 WR Reserved Reserved CAS Latency Reserved Reserved Reserved BL MR0 Definition Note: 1. BA2 and A13~A15 are RFU and must be programmed to 0 during MRS. 2. WR (write recovery for autoprecharge)min in clock cycles is calculated by dividing tWR(in ns) by tCK(in ns) and rounding up to the next integer: WRmin[cycles] = Roundup(tWR[ns] / tCK[ns]). The WR value in the mode register must be programmed to be equal or larger than WRmin. The programmed WR value is used with tRP to determine tDAL. 3. The table only shows the encodings for a given Cas Latency. For actual supported Cas Latency, please refer to speedbin tables for each frequency 4. The table only shows the encodings for Write Recovery. For actual Write recovery timing, please refer to AC timingtable.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 14/131 Burst Length, Type, and Order Accesses within a given burst may be programmed to sequential or interleaved order. The burst type is selected via bit A3 as shown in the MR0 Definition as above figure. The ordering of access within a burst is determined by the burst length, burst type, and the starting column address. The burst length is defined by bits A0-A1. Burst lengths options include fix BC4, fixed BL8, and on the fly which allow BC4 or BL8 to be selected coincident with the registration of a Read or Write command via A12/ BC . Burst Type and Burst Order Burst Length Read Write Starting Column Address (A2,A1,A0) Burst type: Sequential (decimal) A3 = 0 Burst type: Interleaved (decimal) A3 = 1 Note Chop Read 1,2,3 Write 0,V,V 0,1,2,3,X,X,X,X 0,1,2,3,X,X,X,X 1,2,4,5 1,V,V 4,5,6,7,X,X,X,X 4,5,6,7,X,X,X,X

8 Read

Note: 1. In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of burst length being selected on-the-fly via A12/ BC , the internal write operation starts at the same point in time like a burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be pulled in by two clocks. 2. 0~7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst. 3. T: Output driver for data and strobes are in high impedance. 4. V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins. 5. X: Do not Care.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 15/131 CAS Latency The CAS Latency is defined by MR0 (bit A2, A4~A6) as shown in the MR0 Definition figure. CAS Latency is the delay, in clock cycles, between the internal Read command and the availability of the first bit of output data. DDR3 SDRAM does not support any half clock latencies. The overall Read Latency (RL) is defined as Additive Latency (AL) + CAS Latency (CL); RL = AL + CL. Test Mode The normal operating mode is selected by MR0 (bit7=0) and all other bits set to the desired values shown in the MR0 definition figure. Programming bit A7 to a ‘1’ places the DDR3 SDRAM into a test mode that is only used by the DRAM manufacturer and should not be used. No operations or functionality is guaranteed if A7=1. DLL Reset The DLL Reset bit is self-clearing, meaning it returns back to the value of ‘0’ after the DLL reset function has been issued. Once the DLL is enabled, a subsequent DLL Reset should be applied. Anytime the DLL reset function is used, tDLLK must be met before any functions that require the DLL can be used (i.e. Read commands or ODT synchronous operations.) Write Recovery The programmed WR value MR0(bits A9, A10, and A11) is used for the auto precharge feature along with tRP to determine tDAL WR (write recovery for auto-precharge)min in clock cycles is calculated by dividing tWR(ns) by tCK(ns) and rounding up to the next integer: WRmin[cycles] = Roundup(tWR[ns]/tCK[ns]). The WR must be programmed to be equal or larger than tWR (min). Precharge PD DLL MR0 (bit A12) is used to select the DLL usage during precharge power-down mode. When MR0 (A12=0), or ‘slow-exit’, the DLL is frozen after entering precharge power-down (for potential power savings) and upon exit requires tXPDLL to be met prior to the next valid command. When MR0 (A12=1), or ‘fast-exit’, the DLL is maintained after entering precharge power-down and upon exiting power-down requires tXP to be met prior to the next valid command.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 16/131 Mode Register MR1 The Mode Register MR1 stores the data for enabling or disabling the DLL, output strength, Rtt_Nom impedance, additive latency, WRITE leveling enable and Qoff. The Mode Register 1 is written by asserting low on CS , RAS ,CAS ,WE , high on BA0 and low on BA1 and BA2, while controlling the states of address pins according to the following figure. MR1 Definition BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 Qoff Rtt_Nom 0 Level Rtt_Nom D.I.C Rtt_Nom D.I.C DLL A9 A6 A2 A4 A3 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 BA1 BA0 0 1 1 1 1 0 0 1 0 0 0 1 1 0 1 A0 1 0 1 1 0 0 1 1 1 1 1 1 A7 A5 A1 0 0 0 1 0 1 1 0 1 1 A12 Qoff Output buffer enable Enable Disable Output buffer disable Output Driver Impedance RZQ/6 RZQ/7 Reserved Reserved Disable Enable RZQ/6 RZQ/12 RZQ/8 AL Disable CL-1 CL-2 Reserved DLL Enable A15-A13 MR select 0 AL MR0 MR Select Rtt_Nom Disable RZQ/4 RZQ/2 Write Leveling enable MR1 MR2 MR3 Reserved Reserved Note: 1. BA2 and A8, A10, and A13 ~ A15 are RFU and must be programmed to 0 during MRS. 2. Outputs disabled - DQs, DQSs, sDQS . 3. RZQ=240. 4. In Write leveling Mode (MR1[bit7] = 1) with MR1[bit12]=1, all RTT_Nom settings are allowed; in Write Leveling Mode (MR1[bit7] = 1) with MR1[bit12]=0, only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed. 5. If RTT_Nom is used during Writes, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 17/131 DLL Enable/Disable The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to nor- mal operation after having the DLL disabled. During normal operation (DLL-on) with MR1 (A0=0), the DLL is automatically dis- abled when entering Self-Refresh operation and is automatically re-enable upon exit of Self-Refresh operation. Any time the DLL is enabled and subsequently reset, tDLLK clock cycles must occur before a Read or synchronous ODT command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tDQSCK, tAON, or tAOF parameters. During tDLLK, CKE must continuously be registered high. DDR3 SDRAM does not require DLL for any Write operation, expect when RTT_WR is enabled and the DLL is required for proper ODT operation. For more detailed information on DLL Disable operation in DLL-off Mode. The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the ODT pin low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register set command during DLL-off mode. The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set Rtt_WR, MR2 {A10, A9} = {0, 0}, to disable Dynamic ODT externally. Output Driver Impedance Control The output driver impedance of the DDR3 SDRAM device is selected by MR1 (bit A1 and A5) as shown in MR1 definition figure. ODT Rtt Values DDR3 SDRAM is capable of providing two different termination values (Rtt_Nom and Rtt_WR). The nominal termination value Rtt_Nom is programmable in MR1. A separate value (Rtt_WR) may be programmable in MR2 to enable a unique Rtt value when ODT is enabled during writes. The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled. Additive Latency (AL) Additive Latency (AL) operation is supported to make command and data bus efficient for sustainable bandwidth in DDR3 SDRAM. In this operation, the DDR3 SDRAM allows a read or write command (either with or without auto-precharge) to be issued immediately after the active command. The command is held for the time of the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of the AL and CAS Latency (CL) register settings. Write Latency (WL) is controlled by the sum of the AL and CAS Write Latency (CWL) register settings. A summary of the AL register options are shown as the following table. Additive Latency (AL) Settings A4 A3 AL 0 0 0, (AL Disable) 0 1 CL-1 1 0 CL-2 1 1 Reserved Note : AL has a value of CL-1 or CL-2 as per the CL values programmed in the MR0 register.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 18/131 Write leveling For better signal integrity, DDR3 memory module adopted fly by topology for the commands, addresses, control signals, and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes difficult for the Controller to maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support ‘write leveling’ in DDR3 SDRAM to compensate for skew. Output Disable The DDR3 SDRAM outputs maybe enable/disabled by MR1 (bit12) as shown in MR1 definition. When this feature is enabled (A12=1) all output pins (DQs, DQS, DQS , etc.) are disconnected from the device removing any loading of the output drivers. This feature may be useful when measuring modules power for example. For normal operation A12 should be set to ‘0’.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 19/131 Mode Register MR2 The Mode Register MR2 stores the data for controlling refresh related features, Rtt_WR impedance, and CAS write latency. The Mode Register 2 is written by asserting low on CS ,RAS ,CAS ,WE high on BA1 and low on BA0 and BA2, while controlling the states of address pins according to the following figure. MR2 Definition BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 0 SRT ASR A6 A2 A1 A0 0 0 0 0 1 0 0 1 0 1 0 0 1 1 1 0 0 A10 A9 1 0 1 0 0 1 1 0 0 1 1 1 1 1 0 1 1 A5 A4 A3 0 0 0 A7 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 BA1 BA0 1 1 1 0 0 0 1 1 0 1 1 12 (0.833ns>=tCK(avg)>=0.75ns) MR0 8 (1.5ns>=tCK(avg)>=1.25ns) 9 (1.25ns>=tCK(avg)>=1.07ns) 10 (1.07ns>=tCK(avg)>=0.935ns) 11 (0.935ns>=tCK(avg)>=0.833ns) temperature range MR select MR3 Normal Operating temperature range Extended operation MR1 MR2 SRT ASR Manual SR Reference (SRT) ASR enable RZQ/2 Reserved 1/8th Array (BA[2:0]= 000) CWL 5 (tCK(avg)>=2.5ns) 6 (2.5ns>=tCK(avg)>=1.875ns) 7 (1.875ns>=tck(avg)>=1.5ns) Rtt_Nom CWL Quarter Array (BA[2:0]=000, &001) PASR PASR Full Array Half Array (BA[2:0]=000, 001,010, &011) 1/8th Array (BA[2:0]= 111) A15-A13 MR select Rtt_WR Dynamic ODT off RZQ/4 Half Array (BA[2:0]= 100,101,110 & 111 Quarter Array (BA[2:0]=110, & 111) Note: 1. BA2, A5, A8, A11 ~ A15 are RFU and must be programmed to 0 during MRS. 2. The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled. During write leveling, Dynamic ODT is not available.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 20/131 Partial Array Self-Refresh (PASR) Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in this material. If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array beyond the specified address range shown in MR2 Definition table will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI conditions are met and no Self-Refresh command is issued. CAS Write Latency (CWL) The CAS Write Latency is defined by MR2 (bits A3-A5) shown in MR2. CAS Write Latency is the delay, in clock cycles, between the internal Write command and the availability of the first bit of input data. DDR3 DRAM does not support any half clock latencies. The overall Write Latency (WL) is defined as Additive Latency (AL) + CAS Write Latency (CWL); WL=AL+CWL. Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT) DDR3 SDRAM must support Self-Refresh operation at all supported temperatures. Applications requiring Self-Refresh operation in the Extended Temperature Range must use the ASR function or program the SRT bit appropriately. Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in this material. For more details refer to “Extended Temperature Usage”. DDR3 SDRAMs must support Self-Refresh operation at all supported temperatures. Applications requiring Self-Refresh operation in the Extended Temperature Range must use the optional ASR function or program the SRT bit appropriately. Dynamic ODT (Rtt_WR) DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command. MR2 Register locations A9 and A10 configure the Dynamic ODT settings. In Write leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 21/131 Mode Register MR3 The Mode Register MR3 controls Multi-purpose registers. The Mode Register 3 is written by asserting low on CS ,RAS ,CAS , WE high on BA1 and BA0, and low on BA2 while controlling the states of address pins according to the following figure. MR3 Definition BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 MPR

Note: 1. BA2, A3 - A15 are RFU and must be programmed to 0 during MRS 2. The predefined pattern will be used for read synchronization. 3. When MPR control is set for normal operation (MR3 A[2] = 0) then MR3 A[1:0] will be ignored.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 22/131 Multi-Purpose Register (MPR) The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence. To enable the MPR, a Mode Register Set (MRS) command must be issued to MR3 register with bit A2=1. Prior to issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP met). Once the MPR is enabled, any subsequent RD or RDA commands will be redirected to the Multi Purpose Register. When the MPR is enabled, only RD or RDA commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit A2=0). Power down mode, Self-Refresh and any other non-RD/RDA command is not allowed during MPR enable mode. The RESET function is supported during MPR enable mode. The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence. MPR Block Diagram To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3 Register with bit A2 = 1, prior to issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP met). Once the MPR is enabled, any subsequent RD or RDA commands will be redirected to the Multi Purpose Register. The resulting operation, when a RD or RDA command is issued, is defined by MR3 bits A[1:0] when the MPR is enabled as shown. When the MPR is enabled, only RD or RDA commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit A2 = 0). Note that in MPR mode RDA has the same functionality as a READ command which means the auto precharge part of RDA is ignored. Power-Down mode, Self-Refresh and any other non-RD/RDA command is not allowed during MPR enable mode. The RESET function is supported during MPR enable mode.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 23/131 MPR MR3 Register Definition MR3 A[2] MR3 A[1:0] Function MPR MPR-Loc 0b don't care (0b or 1b) Normal operation, no MPR transaction. All subsequent Reads will come from DRAM array. All subsequent Write will go to DRAM array. 1b See MR3 Table Enable MPR mode, subsequent RD/RD A commands defined by MR3 A[1:0]. MPR Functional Description

• One bit wide logical interface via all DQ pins during READ operation.
• Register Read:
• DQL[0] and DQU[0] drive information from MPR.
• DQL[7:1] and DQU[7:1] either drive the same information as DQL [0], or they drive 0b.
• Addressing during for Multi Purpose Register reads for all MPR agents:
• BA [2:0]: don’t care
• A[1:0]: A[1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
• A[2]: For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *) For Burst Chop 4 cases, the burst order is switched on nibble base A [2]=0b, Burst order: 0,1,2,3 *) A[2]=1b, Burst order: 4,5,6,7 *)
• A[9:3]: don’t care
• A10/AP: don’t care
• A12/ BC : Selects burst chop mode on-the-fly, if enabled within MR0.
• A11, A12... (if available): don’t care
• Regular interface functionality during register reads:
• Support two Burst Ordering which are switched with A2 and A[1:0]=00b.
• Support of read burst chop (MRS and on-the-fly via A12/ BC )
• All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the DDR3 SDRAM.
• Regular read latencies and AC timings apply.
• DLL must be locked prior to MPR Reads. NOTE: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 24/131 MPR Register Address Definition The following table provide an overview of the available data location, how they are addressed by MR3 A[1:0] during a MRS to MR3, and how their individual bits are mapped into the burst order bits during a Multi Purpose Register Read. MPR MR3 Register Definition MR3 A[2] MR3 A[1:0] Function Burst Length Read Address A[2:0] Burst Order and Data Pattern 1b 00b Read Predefined Pattern for System Calibration BL8 000b Burst order 0,1,2,3,4,5,6,7 Pre-defined Data Pattern [0,1,0,1,0,1,0,1] BC4 000b Burst order 0,1,2,3 Pre-defined Data Pattern [0,1,0,1] BC4 100b Burst order 4,5,6,7 Pre-defined Data Pattern [0,1,0,1] 1b 01b RFU BL8 000b Burst order 0,1,2,3,4,5,6,7 BC4 000b Burst order 0,1,2,3 BC4 100b Burst order 4,5,6,7 1b 10b RFU BL8 000b Burst order 0,1,2,3,4,5,6,7 BC4 000b Burst order 0,1,2,3 BC4 100b Burst order 4,5,6,7 1b 11b RFU BL8 000b Burst order 0,1,2,3,4,5,6,7 BC4 000b Burst order 0,1,2,3 BC4 100b Burst order 4,5,6,7 NOTE: 1. Burst order bit 0 is assigned to LSB and the burst order bit 7 is assigned to MSB of the selected MPR agent.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 25/131 DDR3 SDRAM Command Description and Operation Command Truth Table Function Abbreviation CKE CS RAS CAS WE   BA0- BA2 A12- BC A10-AP A0-A9,A11 NOTES Previous Cycle Current Cycle Mode Register Set MRS H H L L L L BA OP Code Refresh REF H H L L L H V V V V Self Refresh Entry SRE H L L L L H V V V V 7,9,12 Self Refresh Exit SRX L H H X X X X X X X 7,8,9,12 L H H H V V V V Single Bank Precharge PRE H H L L H L BA V L V Precharge all Banks PREA H H L L H L V V H V Bank Activate ACT H H L L H H BA Write (Fixed BL8 or BC4) WR H H L H L L BA V L CA Write (BC4, on the Fly) WRS4 H H L H L L BA L L CA Write (BL8, on the Fly) WRS8 H H L H L L BA H L CA Write with Auto Precharge (Fixed BL8 or BC4) WRA H H L H L L BA V H CA Write with Auto Precharge (BC4, on the Fly) WRAS4 H H L H L L BA L H CA Write with Auto Precharge (BL8, on the Fly) WRAS8 H H L H L L BA H H CA Read (Fixed BL8 or BC4) RD H H L H L H BA V L CA Read (BC4, on the Fly RDS4 H H L H L H BA L L CA Read (BL8, on the Fly) RDS8 H H L H L H BA H L CA Read with Auto Precharge (Fixed BL8 or BC4) RDA H H L H L H BA V H CA Read with Auto Precharge (BC4, on the Fly) RDAS4 H H L H L H BA L H CA Read with Auto Precharge (BL8, on the Fly) RDAS8 H H L H L H BA H H CA No Operation NOP H H L H H H V V V V 10 Device Deselected DES H H H X X X X X X X 11 Power Down Entry PDE H L L H H H V V V V 6,12 H X X X X X X X Power Down Exit PDX L H L H H H V V V V 6,12 H X X X X X X X ZQ Calibration Long ZQCL H H L H H L X X H X ZQ Calibration Short ZQCS H H L H H L X X L X

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 26/131 DDR3 SDRAM Command Description and Operation Command Truth Table (Conti.) Note: 1. All DDR3 SDRAM commands are defined by states of CS ,RAS ,CAS ,WE and CKE at the rising edge of the clock. The MSB of BA, RA and CA are device density and configuration dependant. 2. RESET is Low enable command which will be used only for asynchronous reset so must be maintained HIGH during any function. 3. Bank addresses (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register. 4. “V” means “H or L (but a defined logic level)” and “X” means either “defined or undefined (like floating) logic level”. 5. Burst reads or writes cannot be terminated or interrupted and Fixed/on-the-Fly BL will be defined by MRS. 6. The Power-Down Mode does not perform any refresh operation. 7. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. 8. Self Refresh Exit is asynchronous. 9. VREF (Both VrefDQ and VrefCA) must be maintained during Self Refresh operation. 10. The No Operation command should be used in cases when the DDR3 SDRAM is in an idle or wait state. The purpose of the No Operation command (NOP) is to prevent the DDR3 SDRAM from registering any unwanted commands between operations. A No Operation command will not terminate a pervious operation that is still executing, such as a burst read or write cycle. 11. The Deselect command performs the same function as No Operation command. 12. Refer to the CKE Truth Table for more detail with CKE transition.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 27/131 CKE Truth Table Current State CKE Command (N) RAS ,CAS ,WE , CS Action (N) Notes Previous Cycle (N-1) Current Cycle (N) Power-Down L L X Maintain Power-Down 14,15 L H DESELECT or NOP Power-Down Exit 11,14 Self-Refresh L L X Maintain Self-Refresh 15,16 L H DESELECT or NOP Self-Refresh Exit 8,12,16 Bank(s) Active H L DESELECT or NOP Active Power-Down Entry 11,13,14 Reading H L DESELECT or NOP Power-Down Entry 11,13,14,17 Writing H L DESELECT or NOP Power-Down Entry 11,13,14,17 Precharging H L DESELECT or NOP Power-Down Entry 11,13,14,17 Refreshing H L DESELECT or NOP Precharge Power-Down Entry 11 All Banks Idle H L DESELECT or NOP Precharge Power-Down Entry 11,13,14,18 H L REFRESH Self-Refresh 9,13,18 Note: 1. CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge. 2. Current state is defined as the state of the DDR3 SDRAM immediately prior to clock edge N. 3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N), ODT is not included here. 4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self-Refresh. 6. CKE must be registered with the same value on tCKEmin consecutive positive clock edges. CKE must remain at the valid inpu t level the entire time it takes to achieve the tCKEmin clocks of registrations. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + tCKEmin + tIH. 7. DESELECT and NOP are defined in the Command Truth Table. 8. On Self-Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXS period. Read or ODT commands may be issued only after tXSDLL is satisfied. 9. Self-Refresh modes can only be entered from the All Banks Idle state. 10. Must be a legal command as defined in the Command Truth Table. 11. Valid commands for Power-Down Entry and Exit are NOP and DESELECT only. 12. Valid commands for Self-Refresh Exit are NOP and DESELECT only. 13. Self-Refresh cannot be entered during Read or Write operations. 14. The Power-Down does not perform any refresh operations. 15. “X” means “don’t care“(including floating around VREF) in Self-Refresh and Power-Down. It also applies to Address pins. 16. VREF (Both Vref_DQ and Vref_CA) must be maintained during Self-Refresh operation. 17. If all banks are closed at the conclusion of the read, write or precharge command, then Precharge Power-Down is entered, otherwise Active Power-Down is entered. 18. ‘Idle state’ is defined as all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress, CKE is high, and all timings from previous operations are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS, etc.) as well as all Self-Refresh exit and Power-Down Exit parameters are satisfied (tXS, tXP, tXPDLL, etc).

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 28/131 No Operation (NOP) Command The No operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP ( CS low and RAS , CAS , and WE high). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. Deselect Command The Deselect function ( CS HIGH) prevents new commands from being executed by the DDR3 SDRAM. The DDR3 SDRAM is effectively deselected. Operations already in progress are not affected. DLL- Off Mode DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until A0 bit set back to “0”. The MR1 A0 bit for DLL control can be switched either during initialization or later. The DLL-off Mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLL-off Mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to satisfy the refresh interval, tREFI. Due to latency counter and timing restrictions, only one value of CAS Latency (CL) in MR0 and CAS Write Latency (CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL=6 and CWL=6. DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the data Strobe to Data relationship (tDQSQ, tQH). Special attention is needed to line up Read data to controller time domain. Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL+CL) cycles after the Read command, the DLL-off mode tDQSCK starts (AL+CL-1) cycles after the read command. Another difference is that tDQSCK may not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCKmin and tDQSCKmax is significantly larger than in DLL-on mode. The timing relations on DLL-off mode READ operation have shown at the following Timing Diagram (CL=6, BL=8)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 29/131 DLL-off mode READ Timing Operation Note: 1. The tDQSCK is used here for DQS, DQS , and DQ to have a simplified diagram; the DLL_off shift will affect both timings in the same way and the skew between all DQ, DQS, and DQS signals will still be tDQSQ.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 30/131 DLL on/off switching procedure DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operation until A0 bit set back to “0”. DLL “on” to DLL “off” Procedure To switch from DLL “on” to DLL “off” requires the frequency to be changed during Self-Refresh outlined in the following procedure: 1. Starting from Idle state (all banks pre-charged, all timing fulfilled, and DRAMs On-die Termination resistors, RTT, must be in high impedance state before MRS to MR1 to disable the DLL). 2. Set MR1 Bit A0 to “1” to disable the DLL. 3. Wait tMOD. 4. Enter Self Refresh Mode; wait until (tCKSRE) satisfied. 5. Change frequency, in guidance with “Input Clock Frequency Change” section. 6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs. 7. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until all tMOD timings from any MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when Self Refresh mode was entered, the ODT signal must continuously be registered LOW until all tMOD timings from any MRS command are satisfied. If both ODT features were disabled in the mode registers when Self Refresh mode was entered, ODT signal can be registered LOW or HIGH. 8. Wait tXS, and then set Mode Registers with appropriate values (especially an update of CL, CWL, and WR may be necessary. A ZQCL command may also be issued after tXS). 9. Wait for tMOD, and then DRAM is ready for next command.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 31/131 DLL Switch Sequence from DLL-on to DLL-off Note: ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High 1. Starting with Idle State, RTT in Hi-Z State. 2. Disable DLL by setting MR1 Bit A0 to 1 3. Enter SR. 4. Change Frequency. 5. Clock must be stable at least tCKSRX. 6. Exit SR. 7. Update Mode registers with DLL off parameters setting. 8. Any valid command.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 32/131 DLL “off” to DLL “on” Procedure To switch from DLL “off” to DLL “on” (with requires frequency change) during Self-Refresh: 1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT) must be in high impedance state before Self-Refresh mode is entered). 2. Enter Self Refresh Mode, wait until tCKSRE satisfied. 3. Change frequency, in guidance with “Input clock frequency change” section. 4. Wait until a stable is available for at least (tCKSRX) at DRAM inputs. 5. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until tDLLK timing from subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode registers when Self Refresh mode was entered. The ODT signal must continuously be registered LOW until tDLLK timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the mode registers when Self Refresh mode was entered, ODT signal can be registered LOW or HIGH. 6. Wait tXS, then set MR1 Bit A0 to “0” to enable the DLL. 7. Wait tMRD, then set MR0 Bit A8 to “1” to start DLL Reset. 8. Wait tMRD, then set Mode registers with appropriate values (especially an update of CL, CWL, and WR may be necessary. After tMOD satisfied from any proceeding MRS command, a ZQCL command may also be issued during or after tDLLK). 9. Wait for tMOD, then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before applying command requiring a locked DLL!). In addition, wait also for tZQoper in case a ZQCL command was issued.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 33/131 DLL Switch Sequence from DLL-off to DLL-on Note: ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High 1. Starting from Idle State. 2. Enter SR. 3. Change Frequency. 4. Clock must be stable at least tCKSRX. 5. Exit SR. 6. Set DLL-on by MR1=”0” 7. Start DLL Reset. 8. Any valid command

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 34/131 Input Clock frequency change Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (spread spectrum clocking) specification. The input clock frequency can be changed from one stable clock rate to another stable clock rate under two conditions: (1) Self-Refresh mode and (2) Precharge Power-Down mode. Outside of these two modes, it is illegal to change the clock frequency. For the first condition, once the DDR3 SDRAM has been successfully placed in to Self-Refresh mode and tCKSRE has been satisfied, the state of the clock becomes a don’t care. Once a don’t care, changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When entering and exiting Self-Refresh mode of the sole purpose of changing the clock frequency. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade. The second condition is when the DDR3 SDRAM is in Precharge Power-Down mode (either fast exit mode or slow exit mode). If the RTT_Nom feature was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must continuously be registered LOW ensuring RTT is in an off state. If the RTT_Nom feature was disabled in the mode register prior to entering Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case. A minimum of tCKSRE must occur after CKE goes LOW before the clock frequency may change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and CKE must be held at stable LOW levels. Once the input clock frequency is changed, stable new clocks must be provided to the DRAM tCKSRX before precharge Power Down may be exited; after Precharge Power Down is exited and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS commands may need to be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high. During DLL re-lock period, ODT must remain LOW and CKE must remain HIGH. After the DLL lock time, the DRAM is ready to operate with new clock frequency.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 35/131 Change Frequency during Precharge Power-down Notes: 1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down 2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1; refer to ODT timing section for exact requirements 3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must continuously be registered LOW ensuring RTT is in an off state. If the RTT_NOM feature was disabled in the mode register prior to entering Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 36/131 Write Leveling For better signal integrity, DDR3 memory adopted fly by topology for the commands, addresses, control signals, and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller to maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in DDR3 SDRAM to compensate the skew. The memory controller can use the “write leveling” feature and feedback from the DDR3 SDRAM to adjust the DQS -DQS to CK - CK relationship. The memory controller involved in the leveling must have adjustable delay setting on DQS -DQS to align the rising edge of DQS -DQS with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK - CK , sampled with the rising edge of DQS -DQS , through the DQ bus. The controller repeatedly delays DQS -DQS until a transition from 0 to 1 is detected. The DQS -DQS delay established though this exercise would ensure tDQSS specification. Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine the actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS -DQS signals. Depending on the actual tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the absolute limits provided in “AC Timing Parameters” section in order to satisfy tDSS and tDSH specification. A conceptual timing of this scheme is show as below figure. Write Leveling Concept DQS/ DQS driven by the controller during leveling mode must be determined by the DRAM based on ranks populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller. One or more data bits should carry the leveling feedback to the controller across the DRAM configurations x16. On a x16 device, both byte lanes should be leveled independently. Therefore, a separate feedback mechanism should be able for each byte lane. The upper data bits should provide the feedback of the upper diff_DQS (diff_UDQS) to clock relationship whereas the lower data bits would indicate the lower diff_DQS (diff_LDQS) to clock relationship.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 37/131 DRAM setting for write leveling and DRAM termination unction in that mode DRAM enters into Write leveling mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write leveling mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/ DQS terminations are activated and deactivated via ODT pin not like normal operation. MR setting involved in the leveling procedure Function MR1 Enable Disable Write leveling enable A7 1 0 Output buffer mode (Qoff) A12 0 1 DRAM termination function in the leveling mode ODT pin at DRAM DQS/ DQS termination DQs termination De-asserted off off Asserted on off Note: 1. In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are allowed; in Write Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom settings of RZQ/2, RZQ/4, and RZQ/6 are allowed. Procedure Description Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling mode, the DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are allowed. As well as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at which DRAM is ready to accept the ODT signal. Controller may drive DQS low and DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die termination on these signals. After tDQSL and tWLMRD controller provides a single DQS, DQS edge which is used by the DRAM to sample CK –CK driven from controller. tWLMRD (max) timing is controller dependent. DRAM samples CK - CK  status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after  tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read strobes (DQS/ DQS ) needed for these DQs. Controller samples incoming DQ and decides to increment or decrement DQS – DQS delay setting and launches the next DQS/ DQS pulse after some time, which is controller dependent. Once a 0 to 1 transition is detected, the controller locks DQS – DQS delay setting and write leveling is achieved for the device. The following figure describes the timing diagram and parameters for the overall Write leveling procedure.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 38/131 Timing details of Write leveling sequence (DQS -DQS is capturing CK -CK low at T1 and CK -CK high at T2) Notes: 1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ, the remaining DQs must be driven low as shown in above Figure, and maintained at this state through out the leveling procedure. 2. MRS: Load MR1 to enter write leveling mode. 3. NOP: NOP or deselect. 4. diff_DQS is the differential data strobe (DQS, DQS ). Timing reference points are the zero crossings. DQS is shown with solid line, DQS is shown with dotted line. 5. DQS/ DQS needs to fulfill minimum pulse width requirements tDQSH(min) and tDQSL(min) as defined for reqular Writes; the max pulse width is system dependent.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 39/131 Write Leveling Mode Exit The following sequence describes how Write Leveling Mode should be exited: 1. After the last rising strobe edge (see ~T0), stop driving the strobe signals (see ~Tc0). Note: From now on, DQ pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command (Te1). 2. Drive ODT pin low (tIS must be satisfied) and keep it low (see Tb0). 3. After the RTT is switched off, disable Write Level Mode via MRS command (see Tc2). 4. After tMOD is satisfied (Te1), any valid command may be registered. (MR commands may be issued after tMRD (Td1). Timing detail of Write Leveling exit

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 40/131 Extended Temperature Usage DDR3 SDRAM supports the optional extended temperature range of 0°C to +95°C, TC. Thus, the SRT and ASR options must be used at a minimum. The extended temperature range DRAM must be refreshed externally at 2X (double refresh) anytime the case temperature is above +85°C (in supporting temperature range). The external refreshing requirement is accomplished by reducing the refresh period from 64ms to 32ms. However, self refresh mode requires either ASR or SRT to support the extended temperature. Thus either ASR or SRT must be enabled when TC is above +85°C or self refresh cannot be used until the case temperature is at or below +85°C. Mode Register Description Field Bits Description ASR MR2(A6) Auto Self-Refresh (ASR) When enabled, DDR3 SDRAM automatically provides Self-Refresh power management functions for all supported operating temperature values. If not enabled, the SRT bit must be programmed to indicate T OPER during subsequent Self-Refresh operation. 0 = Manual SR Reference (SRT) 1 = ASR enable SRT MR2(A7) Self-Refresh Temperature (SRT) Range If ASR = 0, the SRT bit must be programmed to indicate T OPER during subsequent Self-Refresh operation. If ASR = 1, SRT bit must be set to 0. 0 = Normal operating temperature range 1 = Extended operating temperature range

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 41/131 Auto Self-Refresh mode - ASR mode DDR3 SDRAM provides an Auto-Refresh mode (ASR) for application ease. ASR mode is enabled by setting MR2 bit A6=1 and MR2 bit A7=0. The DRAM will manage Self-Refresh entry in either the Normal or Extended Temperature Ranges. In this mode, the DRAM will also manage Self-Refresh power consumption when the DRAM operating temperature changes, lower at low temperatures and higher at high temperatures. If the ASR option is not supported by DRAM, MR2 bit A6 must set to 0. If the ASR option is not enabled (MR2 bit A6=0), the SRT bit (MR2 bit A7) must be manually programmed with the operating temperature range required during Self-Refresh operation. Support of the ASR option does not automatically imply support of the Extended Temperature Range. Self-Refresh Temperature Range - SRT SRT applies to devices supporting Extended Temperature Range only. If ASR=0, the Self-Refresh Temperature (SRT) Range bit must be programmed to guarantee proper self-refresh operation. If SRT=0, then the DRAM will set an appropriate refresh rate for Self-Refresh operation in the Normal Temperature Range. If SRT=1, then the DRAM will set an appropriate, potentially different, refresh rate to allow Self-Refresh operation in either the Normal or Extended Temperature Ranges. The value of the SRT bit can effect self-refresh power consumption, please refer to IDD table for details. Self-Refresh mode summary MR2 A[6] MR2 A[7] Self-Refresh operation Allowed Operating Temperature Range for Self-Refresh mode 0 0 Self-Refresh rate appropriate for the Normal Temperature Range Normal (0 ~ 85 ℃) 0 1 Self-Refresh appropriate for either the Normal or Extended Temperature Ranges. The DRAM must support Extended Temperature Range. The value of the SRT bit can effect self-refresh power consumption, please refer to the IDD table for details. Normal and Extended (0 ~ 95 1 0 ASR enabled (for devices supporting ASR and Normal Temperature Range). Self-Refresh power consumption is temperature dependent. Normal (0 ~ 85 ℃) 1 0 ASR enabled (for devices supporting ASR and Extended Temperature Range). Self-Refresh power consumption is temperature dependent. Normal and Extended (0 ~ 95 1 1 Illegal ACTIVE Command The ACTIVE command is used to open (or activate) a row in a particular bank for subsequent access. The value on the BA0-BA2 inputs selects the bank, and the addresses provided on inputs A0-A12 selects the row. These rows remain active (or open) for accesses until a precharge command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. PRECHARGE Command The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle bank) or if the previously open row is already in the process of precharging. However, the precharge period will be determined by the last PRECHARGE command issued to the bank.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 42/131 READ Operation Read Burst Operation During a READ or WRITE command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or WRITE (AUTO PRECHARGE can be enabled or disabled). A12=0, BC4 (BC4 = burst chop, tCCD=4) A12=1, BL8 A12 will be used only for burst length control, not a column address. Read Burst Operation RL=5 (AL=0, CL=5, BL=8) Note: 1. BL8, RL=5, AL=0, CL=5 2. Dout n = data-out from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0= 00] or MR0[A1:0=01] and A12=1 during READ command at T0. READ Burst Operation RL = 9 (AL=4, CL=5, BL=8) Note: 1. BL8, RL=9, AL=(CL-1), CL=5. 2. Dout n = data- out from column n. 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12=1 during READ command at T0.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 43/131 READ Timing Definitions Read timing is shown in the following figure and is applied when the DLL is enabled and locked. Rising data strobe edge parameters: tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK . tDQSCK is the actual position of a rising strobe edge relative to CK, CK . tQSH describes the DQS, DQS differential output high time. tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins. Falling data strobe edge parameters: tQSL describes the DQS, DQS differential output low time. tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins. Read Timing Definition

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 44/131 Read Timing; Clock to Data Strobe relationship Clock to Data Strobe relationship is shown in the following figure and is applied when the DLL is enabled and locked. Rising data strobe edge parameters: tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK and CK . tDQSCK is the actual position of a rising strobe edge relative to CK and CK . tQSH describes the data strobe high pulse width. Falling data strobe edge parameters: tQSL describes the data strobe low pulse width. Clock to Data Strobe Relationship Notes: 1. Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min) or tDQSCK(max). Instead, rising strobe edge can vary between tDQSCK(min) and tDQSCK(max). 2. The DQS, DQS differential output high time is defined by tQSH and the DQS, DQS differential output low time is defined by tQSL. 3. Likewise, tLZ(DQS)min and tHZ(DQS)min are not tied to tDQSCKmin (early strobe case) and tLZ(DQS)max and tHZ(DQS)max are not tied to tDQSCKmax (late strobe case). 4. The minimum pulse width of read preamble is defined by tRPRE(min). 5. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZDSQ(max) on the right side. 6. The minimum pulse width of read postamble is defined by tRPST(min). 7. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 45/131 Read Timing; Data Strobe to Data Relationship The Data Strobe to Data relationship is shown in the following figure and is applied when the DLL and enabled and locked. Rising data strobe edge parameters: tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins. Falling data strobe edge parameters: tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins. tDQSQ; both rising/falling edges of DQS, no tAC defined Data Strobe to Data Relationship

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 46/131 Read to Read (CL=5, AL=0) T11T10 NOP NOP Dout n +6 Dout n +7 tRPST CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP READ NOP NOP NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 Dout n +4 Dout n +5 tCCD tRPRE Dout n T12 NOP T13 NOP RL = 5 Bank Col b READ Dout b +6 Dout b +7 Dout b +1 Dout b +2 Dout b +3 Dout b +4 Dout b +5 Dout b RL = 5 DQS, DQS DQ READ (BL8) to READ (BL8) NOP NOP tRPST NOPCMD NOP NOP READ NOP NOP NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 tCCD tRPRE Dout n NOP NOP RL = 5 Bank Col b READ Dout b +1 Dout b +2 Dout b +3 Dout b RL = 5 DQS, DQS DQ READ (BL4) to READ (BL4) tRPREtRPST READ Bank Col n READ Bank Col n

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 47/131 READ to WRITE (CL=5, AL=0; CWL=5, AL=0) T11T10 NOP Dout n +6 Dout n +7 tWPST CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP WRITE Address Dout n +1 Dout n +2 Dout n +3 Dout n +4 Dout n +5 READ to Write Command delay = RL +tCCD + 2tCK -WL tRPRE Dout n T12 NOP T13 NOP RL = 5 Bank Col b Dout b +7 Dout b +1 Dout b +2 Dout b +3 Dout b +4 Dout b +5 WL = 5 DQS, DQS DQ READ (BL8) to WRITE (BL8) NOP tWPST NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL tRPRE Dout n NOP NOP RL = 5 READ Dout b +1 Dout b +2 Dout b +3 WL = 5 DQS, DQS READ (BL4) to WRITE (BL4) tWPREtRPST T14 T15 NOP NOP tWRPREtRPST Bank Col n READ NOP NOP NOPNOPNOPNOP DQ NOP NOP tBL = 4 clocks tWR tWTR READ Bank Col n WRITE Bank Col b NOP Dout b NOPNOPNOP NOP Dout b Dout b +6

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 48/131 READ to READ (CL=5, AL=0) T11T10 NOP NOP Dout n +6 Dout n +7 tRPST CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP NOP NOP NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 Dout n +4 Dout n +5 tCCD tRPRE Dout n T12 NOP T13 NOP RL = 5 READ Dout b +1 Dout b +2 Dout b +3 Dout b RL = 5 DQS, DQS DQ READ (BL8) to READ (BC4) NOP NOP tRPST NOPCMD NOP NOP NOP NOP NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 tCCD tRPRE Dout n NOP NOP RL = 5 READ RL = 5 DQS, DQS READ (BC4) to READ (BL8) tRPREtRPST DQ READ Bank Col n READ Bank Col n READ Bank Col b READ Bank Col b Dout b +6 Dout b +7 Dout b +1 Dout b +2 Dout b +3 Dout b +4 Dout b +5 Dout b

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 49/131 READ to WRITE (CL=5, AL=0; CWL=5, AL=0) T11T10 NOP NOP Dout n +6 Dout n +7 tRPST CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP WRITE Address Dout n +1 Dout n +2 Dout n +3 Dout n +4 Dout n +5 tRPRE Dout n T12 NOP T13 NOP RL = 5 READ Dout b +1 Dout b +2 Dout b +3 WL = 5 DQS, DQS DQ NOP NOP tWPST NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 READ to WRITE Command delay = RL + tCCD/2 +2tCK - WL tRPRE Dout n NOP NOP RL = 5 READ WL = 5 DQS, DQS READ (BL4) to WRITE (BL8) tWPREtRPST DQ READ Bank Col n READ Bank Col n NOP Bank Col b WRITE Bank Col b Dout b +6 Dout b +7 Dout b +1 Dout b +2 Dout b +3 Dout b +4 Dout b +5 Dout b NOPNOPNOPNOP READ (BL8) to WRITE (BC4) NOP NOP NOPNOP tWPSTtWPRE Dout b READ to WRITE Command delay = RL + tCCD +2tCK - WL

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 50/131 Write Operation DDR3 Burst Operation During a READ or WRITE command, DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or WRITE (Auto Precharge can be enabled or disabled). A12=0, BC4 (BC4 = Burst Chop, tCCD=4) A12=1, BL8 A12 is used only for burst length control, not as a column address. WRITE Timing Violations Motivation Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure the DRAM works properly. However, it is desirable for certain minor violations that the DRAM is guaranteed not to “hang up” and errors be limited to that particular operation. For the following, it will be assumed that there are no timing violations with regard to the Write command itself (including ODT, etc.) and that it does satisfy all timing requirements not mentioned below. Data Setup and Hold Violations Should the strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a write burst, then wrong data might be written to the memory location addressed with the offending WRITE command. Subsequent reads from that location might result in unpredictable read data, however, the DRAM will work properly otherwise. Strobe to Strobe and Strobe to Clock Violations Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements (tDSS, tDSH, tDQSS) be violated, for any of the strobe edges associated with a Write burst, then wrong data might be written to the memory location addressed with the offending WRITE command. Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly otherwise. Write Timing Parameters This drawing is for example only to enumerate the strobe edges that “belong” to a write burst. No actual timing violations are shown here. For a valid burst all timing parameters for each edge of a burst need to be satisfied (not only for one edge - as shown).

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 51/131 Write Timing Definition Note: 1. BL=8, WL=5 (AL=0, CWL=5). 2. Din n = data in from column n. 3. NOP commands are shown for ease of illustration; other command may be valid at these times. 4. BL8 setting activated by either MR0 [A1:0=00] or MR0 [A1:0=01] and A12 = 1 during WRITE command at T0. 5. tDQSS must be met at each rising clock edge.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 52/131 WRITE to WRITE (WL=5; CWL=5, AL=0) T11T10 NOP Dout n +7 CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 Dout n +5 tCCD tWPRE T12 NOP T13 NOP WL = 5 Dout b +6 Dout b +7 Dout b +1 Dout b +2 Dout b +3 Dout b +5 WL = 5 DQS, DQS DQ WRITE (BL8) to WRITE (BL8) NOP tWPST NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 tCCD tRPRE NOP NOP WL = 5 READ Dout b +1 Dout b +2 Dout b +3 WL = 5 DQS, DQS WRITE (BC4) to WRITE (BC4) tWPREtWPST tWPST Bank Col n WRITE NOP NOP NOPNOPNOPWRITE DQ WRITE Bank Col n WRITE Bank Col b NOP Bank Col b Dout n NOP NOP NOP NOP Dout n +4 Dout n +6 Dout b Dout b +4 tBL=4 tWR tWTR tBL=4 tWR tWTR Dout n Dout b

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 53/131 WRITE to READ (RL=5, CL=5, AL=0; WL=5, CWL=5, AL=0; BL=4) T11T10 NOP Dout n +7 CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 Dout n +5 tWPRE T12 NOP T13 READ WL = 5 DQS, DQS DQ WRITE (BL8) to READ (BC4/BL8) NOPNOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 tRPRE Dout n NOP READ WL = 5 DQS, DQS WRITE (BC4) to READ (BC4/BL8) tWPST Bank Col n WRITE NOP NOP NOPNOPNOPNOP DQ WRITE Bank Col n NOP NOP Bank Col b Dout n NOP NOP NOP NOP Dout n +4 Dout n +6 tWTR RL=5 tBL=4 tWPST Bank Col b tWTR RL=5

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 54/131 WRITE to WRITE (WL=5, CWL=5, AL=0) T11T10 NOP Dout n +7 CK CK T0 T1 T3 T5 T6 T7 T9T2 T4 T8 NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 Dout n +5 tCCD tWPRE T12 NOP T13 NOP WL = 5 Dout b +1 Dout b +2 WL = 5 DQS, DQS DQ WRITE (BL8) to WRITE (BC4) NOP tWPST NOPCMD NOP NOP NOP Address Dout n +1 Dout n +2 Dout n +3 tCCD tRPRE Dout n NOP NOP WL = 5 READ Dout b +1 Dout b +2 Dout b +3 WL = 5 DQS, DQS WRITE (BC4) to WRITE (BL8) tWPREtWPST tWPST Bank Col n WRITE NOP NOP NOPNOPNOPWRITE DQ WRITE Bank Col n WRITE Bank Col b NOP Bank Col b Dout n NOP NOP NOP NOP Dout n +4 Dout n +6 Dout b tBL=4 tWR tWTR tBL=4 tWR tWTR Dout b +3 Dout b +6 Dout b +7 Dout b +3 Dout b +5 Dout b +4 Dout b

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 55/131 Refresh Command The Refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is not persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires Refresh cycles at an average periodic interval of tREFI. When CS , RAS and CAS are held Low and WE High at the rising edge of the clock, the chip enters a Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge time tRP(min) before the Refresh Command can be applied. The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during a Refresh command. An internal address counter suppliers the address during the refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the next valid command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min) as shown in the following figure. In general, a Refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of 8 Refresh commands can be postponed during operation of the DDR3 SDRAM, meaning that at no point in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8 Refresh commands are postponed in a row, the resulting maximum interval between the surrounding Refresh commands is limited to 9 x tREFI. A maximum of 8 additional Refresh commands can be issued in advance (“pulled in”), with each one reducing the number of regular Refresh commands required later by one. Note that pulling in more than 8 Refresh commands in advance does not further reduce the number of regular Refresh commands required later, so that the resulting maximum interval between two surrounding Refresh command is limited to 9 x tREFI. At any given time, a maximum of 16 REF commands can be issued within 2 x tREFI. Self- Refresh Mode may be entered with a maximum of eight Refresh commands being postponed. After exiting Self-Refresh Mode with one or more Refresh commands postponed, additional Refresh commands may be postponed to the extent that the total number of postponed Refresh commands (before and after the Self-Refresh) will never exceed eight. During Self-Refresh Mode, the number of postponed or pulled-in REF commands does not change. Self-Refresh Entry/Exit Timing Note: 1. Only NOP/DES commands allowed after Refresh command registered until tRFC(min) expires. 2. Time interval between two Refresh commands may be extended to a maximum of 9 x tREFI. Postponing Refresh Commands (Example)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 56/131 Pulled-in Refresh Commands (Example) Self-Refresh Operation The Self-Refresh command can be used to retain data in the DDR3 SDRAM, even if the reset of the system is powered down. When in the Self-Refresh mode, the DDR3 SDRAM retains data without external clocking. The DDR3 SDRAM device has a built-in timer to accommodate Self-Refresh operation. The Self-Refresh Entry (SRE) Command is defined by having CS ,RAS , CAS and CKE held low with WE high at the rising edge of the clock. Before issuing the Self-Refreshing-Entry command, the DDR3 SDRAM must be idle with all bank precharge state with tRP sat- isfied. ‘Idle state’ is defined as all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress, CKE is high, and all timings from previous operations are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS, etc.). Also, on-die termination must be turned off before issuing Self-Refresh-Entry command, by either registering ODT pin low “ODTL + 0.5tCK” prior to the Self-Refresh Entry command or using MRS to MR1 command. Once the Self-Refresh Entry command is registered, CKE must be held low to keep the device in Self-Refresh mode. During normal operation (DLL on), MR1 (A0=0), the DLL is automatically disabled upon entering Self-Refresh and is automatically enabled (including a DLL-RESET) upon exiting Self-Refresh. When the DDR3 SDRAM has entered Self-Refresh mode, all of the external control signals, except CKE and RESET , are “don’t care”. For proper Self-Refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ, VREFCA, and VREFDQ) must be at valid levels. VrefDQ supply may be turned OFF and VREFDQ may take any value between VSS and VDD during Self Refresh operation, provided that VrefDQ is valid and stable prior to CKE going back high and that first Write operation or first Write Leveling Activity may not occur earlier than 512 nCK after exit from Self Refresh. The DRAM initiates a minimum of one Refresh command internally within tCKE period once it enters Self-Refresh mode. The clock is internally disabled during Self-Refresh operation to save power. The minimum time that the DDR3 SDRAM must remain in Self-Refresh mode is tCKE. The user may change the external clock frequency or halt the external clock tCKSRE after Self-Refresh entry is registered; however, the clock must be restarted and stable tCKSRX before the device can exit Self-Refresh mode. The procedure for exiting Self-Refresh requires a sequence of events. First, the clock must be stable prior to CKE going back HIGH. Once a Self-Refresh Exit Command (SRX, combination of CKE going high and either NOP or Deselect on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not requiring a locked DLL can be issued to the device to allow for any internal refresh in progress. Before a command that requires a locked DLL can be applied, a delay of at least tXSDLL must be satisfied. Depending on the system environment and the amount of time spent in Self-Refresh, ZQ calibration commands may be required to compensate for the voltage and temperature drift as described in “ZQ Calibration Commands”. To issue ZQ calibration commands, applicable timing requirements must be satisfied. CKE must remain HIGH for the entire Self-Refresh exit period tXSDLL for proper operation except for Self-Refresh re-entry. Upon exit from Self-Refresh, the DDR3 SDRAM can be put back into Self-Refresh mode after waiting at least tXS period and issuing one refresh command (refresh period of tRFC). NOP or deselect commands must be registered on each positive clock edge during the Self-Refresh exit interval tXS. ODT must be turned off during tXSDLL. The use of Self-Refresh mode instructs the possibility that an internally times refresh event can be missed when CKE is raised for exit from Self-Refresh mode. Upon exit from Self-Refresh, the DDR3 SDRAM requires a minimum of one extra refresh command before it is put back into Self-Refresh mode.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 57/131 Self-Refresh Entry/Exit Timing Note: 1. Only NOP or DES commands 2. Valid commands not requiring a locked DLL 3. Valid commands requiring a locked DLL

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 58/131 Power-Down Modes Power-Down Entry and Exit Power-Down is synchronously entered when CKE is registered low (along with NOP or Deselect command). CKE is not allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write operation are in progress. CKE is allowed to go low while any of other operation such as row activation, precharge or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those operation. The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM specifications. During Power-Down, if all banks are closed after any in progress commands are completed, the device will be in precharge Power-Down mode; if any bank is open after in progress commands are completed, the device will be in active Power-Down mode. Entering Power-down deactivates the input and output buffers, excluding CK, CK , ODT, CKE, and RESET . To protect DRAM internal delay on CKE line to block the input signals, multiple NOP or Deselect commands are needed during the CKE switch off and cycle(s) after, this timing period are defined as tCPDED. CKE_low will result in deactivation of command and address receivers after tCPDED has expired. Power-Down Entry Definitions Status of DRAM MRS bit A12 DLL PD Exit Relevant Parameters Active (A Bank or more open) Don't Care On Fast tXP to any valid command. Precharged (All Banks Precharged)

0 Off Slow

tXP to any valid command. Since it is in precharge state, commands here will be ACT, AR, MRS/EMRS, PR, or PRA. tXPDLL to commands who need DLL to operate, such as RD, RDA, or ODT control line. Precharged (All Banks Precharged) 1 On Fast tXP to any valid command. Also the DLL is disabled upon entering precharge power-down (Slow Exit Mode), but the DLL is kept enabled during precharge power-down (Fast Exit Mode) or active power-down. In power-down mode, CKE low, RESET high, and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state but all other input signals are “Don’t care” (If RESET goes low during Power-Down, the DRAM will be out of PD mode and into reset state). CKE low must be maintain until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the device. The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect command). CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC spec table of this datasheet.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 59/131 Active Power-Down Entry and Exit timing diagram Note: VALID command at T0 is ACT, NOP , DES or PRE with still one bank remaining open after completion of the precharge command. Power-Down Entry after Read and Read with Auto Precharge

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 60/131 Power-Down Entry after Write with Auto Precharge Note: tWR is programmed through MR0. Power-Down Entry after Write

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 61/131 Precharge Power-Down (Fast Exit Mode) Entry and Exit Precharge Power-Down (Slow Exit Mode) Entry and Exit

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 62/131 Refresh Command to Power-Down Entry Active Command to Power-Down Entry

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 63/131 Precharge/Precharge all Command to Power-Down Entry MRS Command to Power-Down Entry

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 64/131 On-Die Termination (ODT) ODT (On-Die Termination) is a feature of the DDR3 SDRAM that allows the DRAM to turn on/off termination resistance for each DQ, DQS, DQS and DM via the ODT control pin. The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices. The ODT feature is turned off and not supported in Self-Refresh mode. A simple functional representation of the DRAM ODT feature is shown as below. Functional Representation of ODT The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control information. The value of RTT is determined by the settings of Mode Register bits. The ODT pin will be ignored if the Mode Register MR1 and MR2 are programmed to disable ODT and in self-refresh mode. ODT Mode Register and ODT Truth Table The ODT Mode is enabled if either of MR1 {A2, A6, A9} or MR2 {A9, A10} are non-zero. In this case, the value of RTT is determined by the settings of those bits. Application: Controller sends WR command together with ODT asserted. One possible application: The rank that is being written to provides termination. DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR) DRAM does not use any write or read command decode information. Termination Truth Table ODT pin DRAM Termination State

0 OFF

1 ON, (OFF, if disabled by MR1 {A2, A6, A9} and MR2 {A9, A10} in general)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 65/131 Synchronous ODT Mode Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down definition, these modes are: Any bank active with CKE high Refresh with CKE high Idle mode with CKE high Active power down mode (regardless of MR0 bit A12) Precharge power down mode if DLL is enabled during precharge power down by MR0 bit A12 The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the ODT pin low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register set command during DLL-off mode. In synchronous ODT mode, RTT will be turned on ODTLon clock cycles after ODT is sampled high by a rising clock edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency is tied to the write latency (WL) by: ODTLonn = WL - 2; ODTLoff = WL-2. ODT Latency and Posted ODT In synchronous ODT Mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency (AL) relative to the external ODT signal. ODTLon = CWL + AL - 2; ODTLoff = CWL + AL - 2. For details, refer to DDR3 SDRAM latency definitions. ODT Latency Symbol Parameter DDR3- 1866/2133/2400 Unit ODTLon ODT turn on Latency WL - 2 = CWL + AL - 2 tC K ODTLoff ODT turn off Latency WL - 2 = CWL + AL - 2 tCK

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 66/131 Timing Parameters In synchronous ODT mode, the following timing parameters apply: ODTLon, ODTLoff, tAON min/max, tAOF min/max. Minimum RTT turn-on time (tAON min) is the point in time when the device leaves high impedance and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON max) is the point in time when the ODT resistance is fully on. Both are measured from ODTLon. Minimum RTT turn-off time (tAOF min) is the point in time when the device starts to turn off the ODT resistance. Maximum RTT turn off time (tAOF max) is the point in time when the on-die termination has reached high impedance. Both are measured from ODTLoff. When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the write command. ODTH4 and ODTH8 are measured from ODT registered high to ODT registered low or from the registration of a write command until ODT is registered low. Synchronous ODT Timing Example for AL=3; CWL=5; ODTLon=AL+CWL-2=6; ODTLoff=AL+CWL-2=6 Synchronous ODT example with BL=4, WL=7 ODT must be held for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BL=4) or ODTH8 (BL=8) after Write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or from registration of Write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied from ODT registered at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the registration of the Write command at T7.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 67/131 ODT during Reads: As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle before the read preamble by driving the ODT pin low appropriately. RTT may not be enabled until the end of the post-amble as shown in the following figure. DRAM turns on the termination when it stops driving which is determined by tHZ. If DRAM stops driving early (i.e. tHZ is early), then tAONmin time may apply. If DRAM stops driving late (i.e. tHZ is late), then DRAM complies with tAONmax timing. Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example. ODT must be disabled externally during Reads by driving ODT low. (Example: CL=6; AL=CL-1=5; RL=AL+CL=11; CWL=5; ODTLon=CWL+AL-2=8; ODTLoff=CWL+ AL-2=8) Dynamic ODT In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is supported by the “Dynamic ODT” feature as described as follows: Functional Description The Dynamic ODT Mode is enabled if bit (A9) or (A10) of MR2 is set to ‘1’. The function is described as follows: Two RTT values are available: RTT_Nom and RTT_WR. The value for RTT_Nom is preselected via bits A[9,6,2] in MR1. The value for RTT_WR is preselected via bits A[10,9] in MR2. During operation without write commands, the termination is controlled as follows: Nominal termination strength RTT_Nom is selected. Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff. When a Write command (WR, WRA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is enabled, the termi- nation is controlled as follows: A latency ODTLcnw after the write command, termination strength RTT_WR is selected. A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected OTF) after the write command, termination strength RTT_Nom is selected. Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 68/131 The following table shows latencies and timing parameters which are relevant for the on-die termination control in Dynamic ODT mode. The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set RTT_WR, MR2[A10,A9 = [0,0], to disable Dynamic ODT externally. When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the Write command. ODTH4 and ODTH8 are measured from ODT registered high to ODT registered low or from the registration of Write command until ODT is register low. Latencies and timing parameters relevant for Dynamic ODT Name and Description Abbr. Defined from Defined to Definition for all DDR3 speed pin Unit ODT turn-on Latency ODTLon Registering external ODT signal high turning termination on ODTLon=WL-2 tCK ODT turn-off Latency ODTLoff registering external ODT signal low turning termination off ODTLoff=WL-2 tCK ODT Latency for changing from RTT_Nom to RTT_WR ODTLcnw registering external write command change RTT strength from RTT_Nom to RTT_WR ODTLcnw=WL-2 tCK ODT Latency for change from RTT_WR to RTT_Nom (BL=4) ODTLcwn4 registering external write command change RTT strength from RTT_WR to RTT_Nom ODTLcwn4=4+ODTLoff tCK ODT Latency for change from RTT_WR to RTT_Nom (BL=8) ODTLcwn8 registering external write command change RTT strength from RTT_WR to RTT_Nom ODTLcwn8=6+ODTLoff tCK(avg) Minimum ODT high time after ODT assertion ODTH4 registering ODT high ODT registered low ODTH4=4 tCK(avg) Minimum ODT high time after Write (BL=4) ODTH4 registering write with ODT high ODT registered low ODTH4=4 tCK(avg) Minimum ODT high time after Write (BL=8) ODTH8 registering write with ODT high ODT register low ODTH8=6 tCK(avg) RTT change skew tADC ODTLcnw ODTLcwn RTT valid tADC(min)=0.3tCK(avg) tADC(max)=0.7tCK(avg) tCK(avg) Note: tAOF,nom and tADC,nom are 0.5tCK (effectively adding half a clock cycle to ODTLoff, ODTcnw, and ODTLcwn)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 69/131 ODT Timing Diagrams Dynamic ODT: Behavior with ODT being asserted before and after the write Note: Example for BC4 (via MRS or OTF), AL=0, CWL=5. ODTH4 applies to first registering ODT high and to the registration of the Write command. In this example ODTH4 would be satisfied if ODT went low at T8. (4 clocks after the Write command). Dynamic ODT: Behavior without write command, AL=0, CWL=5 Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied; ODT registered low at T5 would also be legal.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 70/131 Dynamic ODT: Behavior with ODT pin being asserted together with write command for the duration of 6 Clock cycles Note: Example for BL8 (via MRS or OTF), AL=0, CWL=5. In this example ODTH8=6 is exactly satisfied. Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles, example for BC4 (via MRS or OTF), AL=0, CWL=5

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 71/131 Dynamic ODT: Behavior with ODT pin being asserted together with write command for the duration of 4 Clock cycles

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 72/131 Asynchronous ODT Mode Asynchronous ODT mode is selected when DRAM runs in DLLon mode, but DLL is temporarily disabled (i.e. frozen) in precharge power-down (by MR0 bit A12). Based on the power down mode definitions, this is currently Precharge power down mode if DLL is disabled during precharge power down by MR0 bit A12. In asynchronous ODT timing mode, internal ODT command is NOT delayed by Additive Latency (AL) relative to the external ODT command. In asynchronous ODT mode, the following timing parameters apply: tAONPD min/max, tAOFPD min/max. Minimum RTT turn-on time (tAONPD min) is the point in time when the device termination circuit leaves high impedance state and ODT resistance begins to turn on. Maximum RTT turn on time (tAONPD max) is the point in time when the ODT resistance is fully on. tAONPD min and tAONPDmax are measured from ODT being sampled high. Minimum RTT turn-off time (tAOFPDmin) is the point in time when the devices termination circuit starts to turn off the ODT resistance. Maximum ODT turn off time (tAOFPDmax) is the point in time when the on-die termination has reached high impedance. tAOFPD min and tAOFPDmax are measured from ODT being sample low. Asynchronous ODT Timings on DDR3 SDRAM with fast ODT transition: AL is ignored. In Precharge Power Down, ODT receiver remains active; however no Read or Write command can be issued, as the respective ADD/CMD receivers may be disabled. Asynchronous ODT Timing Parameters for all Speed Bins Symbol Description Min. Max. Unit tAONPD Asynchronous RTT turn-on delay (Power-Down with DLL frozen) 2 8.5 ns tAOFPD Asynchronous RTT turn-off delay (Power-Down with DLL frozen) 2 8.5 ns ODT timing parameters for Power Down (with DLL frozen) entry and exit transition period Description Min. Max. ODT to RTT turn-on delay min{ ODTLon * tCK + tAONmin; tAONPDmin } min{ (WL - 2) * tCK + tAONmin; tAONPDmin } max{ ODTLon * tCK + tAONmax; tAONPDmax } max{ (WL - 2) * tCK + tAONmax; tAONPFmax } ODT to RTT turn-off delay min{ ODTLoff * tCK + tAOFmin; tAOFPDmin } min{ (WL - 2) * tCK + tAOFmin; tAOFPDmin } max{ ODTLoff * tCK + tAOFmax; tAOFPDmax } max{ (WL - 2) * tCK + tAOFmax; tAOFPDmax } tANPD WL-1

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 73/131 Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is a transition period around power down entry, where the DDR3 SDRAM may show either synchronous or asynchronous ODT behavior. The transition period is defined by the parameters tANPD and tCPDED(min). tANPD is equal to (WL-1) and is counted back- wards in time from the clock cycle where CKE is first registered low. tCPDED(min) starts with the clock cycle where CKE is first registered low. The transition period begins with the starting point of tANPD and terminates at the end point of tCPDED(min). If there is a Refresh command in progress while CKE goes low, then the transition period ends at the later one of tRFC(min) after the Refresh command and the end point of tCPDED(min). Please note that the actual starting point at tANPD is excluded from the transition period, and the actual end point at tCPDED(min) and tRFC(min, respectively, are included in the transition period. ODT assertion during the transition period may result in an RTT changes as early as the smaller of tAONPDmin and (ODT- Lon*tCK+tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK+tAONmax). ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and (ODTLoff*tCK+tAOFmin) and as late as the larger of tAOFPDmax and (ODTLoff*tCK+tAOFmax). Note that, if AL has a large value, the range where RTT is uncertain becomes quite large. The following figure shows the three different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state change during the transition period; ODT_C shows a state change after the transition period. Synchronous to asynchronous transition during Precharge Power Down (with DLL frozen) entry (AL=0; CWL=5; tANPD=WL-1=4)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 74/131 Asynchronous to Synchronous ODT Mode transition during Power-Down Exit If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is also a transition period around power down exit, where either synchronous or asynchronous response to a change in ODT must be expected from the DDR3 SDRAM. This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered high. tANPD is equal to (WL -1) and is counted (backwards) from the clock cycle where CKE is first registered high. ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPDmin and (ODT- Lon*tCK+tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK+tAONmax). ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and (ODTLoff*tCK+tAOFmin) and as late as the larger of tAOFPDmax and (ODToff*tCK+tAOFmax). Note that if AL has a large value, the range where RTT is uncertain becomes quite large. The following figure shows the three different cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during the transition period; ODT_A shows a state change of ODT after the transition period with synchronous response. Asynchronous to synchronous transition during Precharge Power Down (with DLL frozen) exit (CL=6; AL=CL-1; CWL=5; tANPD=WL-1=9)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 75/131 Asynchronous to Synchronous ODT Mode during short C KE high and short CKE low periods If the total time in Precharge Power Down state or Idle state is very short, the transition periods for PD entry and PD exit may overlap. In this case, the response of the DDR3 SDRAMs RTT to a change in ODT state at the input may be synchronous or asynchronous from the state of the PD entry transition period to the end of the PD exit transition period (even if the entry ends later than the exit period). If the total time in Idle state is very short, the transition periods for PD exit and PD entry may overlap. In this case, the response of the DDR3 SDRAMs RTT to a change in ODT state at the input may be synchronous or asynchronous from the state of the PD exit transition period to the end of the PD entry transition period. Note that in the following figure, it is assumed that there was no Refresh command in progress when Idle state was entered. Transition period for short CKE cycles with entry and exit period overlapping (AL=0; WL=5; tANPD=WL-1=4)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 76/131 ZQ Calibration Commands ZQ Calibration Description ZQ Calibration command is used to calibrate DRAM Ron and ODT values. DDR3 SDRAM needs longer time to calibrate output driver and on-die termination circuits at initialization and relatively smaller time to perform periodic calibrations. ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may be issued at any time by the controller depending on the system environment. ZQCL command triggers the calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from calibration engine to DRAM IO which gets reflected as updated output driver and on-die termination values. The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a timing period of tZQoper. ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A shorter timing win- dow is provided to perform the calibration and transfer of values as defined by timing parameter tZQCS. No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper, or tZQCS. The quiet time on the DRAM channel allows calibration of output driver and on-die termination values. Once DRAM calibration is achieved, the DRAM should disable ZQ current consumption path to reduce power. All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller. ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self refresh. Upon self-refresh exit, DDR3 SDRAM will not perform an IO calibration without an explicit ZQ calibration command. The earliest possible time for ZQ Calibration command (short or long) after self refresh exit is tXS. In systems that share the ZQ resistor between devices, the controller must not allow any overlap of tZQoper, tZQinit, or tZQCS between ranks. ZQ Calibration Timing Note: 1. CKE must be continuously registered high during the calibration procedure. 2. On-die termination must be disabled via the ODT signal or MRS during the calibration procedure. 3. All devices connected to the DQ bus should be high impedance during the calibration procedure. ZQ External Resistor Value, Tolerance, and Capacitive loading In order to use the ZQ calibration function, a 240 ohm +/- 1% tolerance external resistor connected between the ZQ pin and ground. The single resistor can be used for each SDRAM or one resistor can be shared between two SDRAMs if the ZQ calibration timings for each SDRAM do not overlap. The total capacitive loading on the ZQ pin must be limited.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 77/131 Absolute Maximum Ratings Absolute Maximum DC Ratings Symbol Parameter Rating Unit Note VDD Voltage on VDD pin relative to Vss -0.4 ~ 1.80 V 1,3 VDDQ Voltage on VDDQ pin relative to Vss -0.4 ~ 1.8 0 V 1,3 Vin, Vout Voltage on any pin relative to Vss -0.4 ~ 1.80 V 1 Tstg Storage Temperature -55 ~ 100 °C 1,2 Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6VDDQ, when VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV. Refresh parameters Parameter Symbol Value Unit REF command to ACT or REF command time tRFC 110 ns Temperature Range Condition Parameter Value Units Notes Commercial Normal Operating Temperature Range 0 to 85 °C 1 Extended Temperature Range 85 to 95 °C 1,2 Note: 1. Operating Temperature Toper is the case surface temperature on the center/top side of the DRAM. 2. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C case temperature. Full specifications are guaranteed in this range, but the following additional apply. a) Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us. b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6=0 and MR2 A7=1) or enable the optional Auto Self-Refresh mode (MR2 A6=1 and MR2 A7=0).

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 78/131 AC & DC Operating Conditions Recommended DC Operating Conditions Symbol Parameter Rating Unit Note Min. Typ. Max. VDD Supply Voltage 1.425 1.5 1.575 V 1,2 VDDQ Supply Voltage for Output 1.425 1.5 1.575 V 1, 2 Note: 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 79/131 AC & DC Input Measurement Levels AC and DC Logic Input Levels for Command and Address Symbol Parameter DDR3-1866 / 2133/ 2400 Unit Note Min. Max. VIH.CA(DC100) DC input logic high VREF + 0.1 VDD V 1,5 VIL.CA(DC100) DC input logic low VSS VREF - 0.1 V 1 ,6 VIH.CA(AC175) AC input logic high - - V 1,2,7 VIL.CA(AC175) AC input logic low - - V 1,2,8 VIH.CA(AC150) AC input logic high - - V 1,2,7 VIL.CA(AC150) AC input logic low - - V 1,2,8 VIH.CA(AC135) AC input logic high VREF + 0.135 Note 2 V 1,2,7 VIL.CA(AC135) AC input logic low Note2 VREF - 0.135 V 1,2,8 VIH.CA(AC125) AC input logic high VREF + 0.125 Note 2 V 1,2,7 VIL.CA(AC125) AC input logic low Note2 VREF - 0.125 V 1,2,8 VREFCA(DC) Reference Voltage for ADD, CMD inputs 0.49 * VDD 0.51 * VDD V 3,4,9 Note: 1. For input only pins except RESET .VREF=VREFCA(DC). 2. See "Overshoot and Undershoot Specifications". 3. The ac peak noise on VREF may not allow VREF to deviate from VREFCA(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV). 4. For reference: approx. VDD/2 +/- 15 mV. 5. VIH(dc) is used as a simplified symbol for VIH.CA(DC100). 6. VIL(dc) is used as a simplified symbol for VIL.CA(DC100). VIH.CA(AC175) value is used when VREF + 0.175V is referenced, VIH.CA(AC150) value is used when VREF + 0.150V is referenced, VIH.CA(AC135) value is used when VREF + 0.135V is referenced, and VIH.CA(AC125) value is used when VREF + 0.125V is referenced. VIL.CA(AC175) value is used when VREF - 0.175V is referenced, VIL.CA(AC150) value is used when VREF - 0.150V is referenced, VIL.CA(AC135) value is used when VREF - 0.135V is referenced, and VIL.CA(AC125) value is used when VREF - 0.125V is referenced. 9. VREFCA(DC) is measured relative to VDD at the same point in time on the same device.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 80/131 AC and DC Logic Input Levels for DQ and DM Symbol Parameter DDR3-1866 / 2133/ 2400 Unit Note Min. Max. VIH.DQ(DC100) DC input logic high VREF + 0.1 VDD V 1,5 VIL.DQ(DC100) DC input logic low VSS VREF- 0.1 V 1, 6 VIH.DQ(AC175) AC input logic high - - V 1,2,7 VIL.DQ(AC175) AC input logic low - - V 1,2,8 VIH.DQ(AC150) AC input logic high - - V 1,2,7 VIL.DQ(AC150) AC input logic low - - V 1,2,8 VIH.DQ(AC135) AC input logic high VREF + 0.135 Note 2 V 1,2,7 VIL.DQ(AC135) AC input logic low Note2 VREF - 0.135 V 1,2,8 VREFDQ(DC) Reference Voltage for DQ, DM inputs 0.49 * VDD 0.51 * VDD V 3,4,9 Note: 1. VREF = VREFDQ(DC). 2. See "Overshoot and Undershoot Specifications". 3. The ac peak noise on VREF may not allow VREF to deviate from VREFDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV). 4. For reference: approx. VDD/2 +/- 15 mV. 5. VIH(dc) is used as a simplified symbol for VIH.DQ(DC100). 6. VIL(dc) is used as a simplified symbol for VIL.DQ(DC100). used when VREF + 0.175V is referenced, VIH.DQ(AC150) value is used when VREF + 0.150V is referenced, and VIH.DQ(AC135) value is used when VREF + 0.135V is referenced. used when VREF - 0.175V is referenced, VIL.DQ(AC150) value is used when VREF -0.150V is referenced, and VIL.DQ(AC135) value is used when VREF - 0.135V is referenced. 9. VREFCA(DC) is measured relative to VDD at the same point in time on the same device

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 81/131 VREF Tolerances The dc-tolerance limits and ac-moist limits for the reference voltages VREFCA and VREFDQ are illustrated in the following figure. It shows a valid reference voltage VREF (t) as a function of time. (VREF stands for VREFCA and VREFDQ likewise). VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g.,1 sec). This average has to meet the min/max requirement in previous page. Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than ±1% VDD. The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and VIL(DC) are dependent on VREF. “VREF” shall be understood as VREF(DC). The clarifies that dc-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to which setup and hold is measured. System timing and voltage budgets need to account for VREF(DC) deviations from the optimum position within the data-eye of the input signals. This also clarifies that the DRAM setup/hold specification and de-rating values need to include time and voltage associated with VREF ac-noise. Timing and voltage effects due to ac-noise on VREF up to the specified limit ( ±1% of VDD) are included in DRAM timing and their associated de-ratings. Illustration of VREF(DC) tolerance and VREF ac-noise limits

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 82/131 Differential AC and DC Logic Input Levels for clock (CK-CK ) and Strobe (DQS -DQS ) Symbol Parameter DDR3-1866/2133/2400 Unit Notes Min. Max. VIHdiff Differential input logic high +0.20 Note3 V 1 VILdiff Differential input logic low Note3 -0.200 V 1 VIHdiff(ac) Differential input high ac 2 x ( VIH(ac) – VREF ) Note3 V 2 VILdiff(ac) Differential input low ac Note3 2 x ( V IL(ac)- VREF ) V 2 Note: 1. Used to define a differential signal slew-rate. 2. For CK - CK use VIH/VIL(ac) of ADD/CMD and VREFCA; for DQS -DQS , DQSL, DQSL , DQSU, DQSU use VIH/VIL(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also there. 3. These values are not defined, however the single-ended signals CK, CK , DQS, DQS ,DQSL, DQSL ,DQSU, DQSU need to be within the respective limits (VIH(dc)max, VIL(dc)min) for single-ended signals as well as limitations for overshoot and undershoot. Refer to ”Overshoot and Undershoot Specifications”. Definition of differential ac-swing and “time above ac-level”

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 83/131 Allowed time before ringback (tDVAC) for CK -CK  and DQS -DQS Slew Rate [V/ns] DDR3-1866 / 2133/ 2400 tDVAC [ps] @ IVIH/Ldiff(ac)I = 300mV tDVAC [ps] @ IVIH/Ldiff(ac)I = (CK-CK )only Min. Max. Min. Max. > 4.0 134 - 139 - 4.0 134 - 139 - 3.0 112 - 118 - 2.0 67 - 77 - 1.8 52 - 63 - 1.6 33 - 45 - 1.4 9 - 23 - 1.2 note - note - 1.0 note - note - < 1.0 note - note - Note: Rising input differential signal shall become equal to or greater than VIHdiff(ac) level and Falling input differential signal shall become equal to or less than VILdiff(ac) level. Single-ended requirements for differential signals Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK ,DQS ,DQSL , or DQSU ) has also to comply with certain requirements for single-ended signals. CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH (ac) / VIL (ac)) for ADD/CMD signals) in every half-cycle. DQS, DQSL, DQSU, DQS ,DQSL have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac) / VIL (ac)) for DQ signals) in every half-cycle proceeding and following a valid transition. Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if VIH150 (ac)/VIL150(ac) is used for ADD/CMD signals, then these ac-levels apply also for the singleended signals CK and CK .

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 84/131 Symbol Parameter DDR3-1866/ 2133/ 2400 Unit Notes Min. Max. VSEH Single-ended high-level for strobes (VDDQ/2) + 0.175 note3 V 1, 2 Single-ended high-level for CK, CK (VDDQ/2) + 0.175 note3 V 1, 2 VSEL Single-ended low-level for strobes note3 (VDDQ/2) - 0.175 V 1, 2 Single-ended Low-level for CK, CK note3 (VDDQ/2) - 0.175 V 1, 2 Note: 1. For CK, CK use VIH/VIL(ac) of ADD/CMD; for strobes (DQS, DQSL, DQSU, DQS ,DQSL ,DQSU ) use VIH/VIL(ac) of DQs. 2. VIH(ac)/VIL(ac) for DQs is based on VREFDQ; VIH(ac)/VIL(ac) for ADD/CMD is based on VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also there. 3. These values are not defined, however the single-ended signals CK, CK , DQS, DQS , DQSL, DQSL , DQSU, DQSU need to be within the respective limits (VIH(dc)max, VIL(dc)min) for single-ended signals as well as limitations for overshoot and undershoot. Differential Input Cross Point Voltage To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input signals (CK, CK and DQS, DQS ) must meet the requirements in the following table. The differential input cross point voltage Vix is measured from the actual cross point of true and complete signal to the midlevel between of VDD and VSS. Vix Definition

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 85/131 Cross point voltage for differential input signals (CK, DQS) Symbol Parameter DDR3-1866 / 2133/ 2400 Unit Note Min. Max. VIX(CK) Differential Input Cross Point Voltage relative to VDD/2 for CK, CK -150 150 mV 1 -175 175 mV 2 VIX(DQS) Differential Input Cross Point Voltage relative to VDD/2 for DQS, DQS -150 150 mV 1 Note: 1. The relation between Vix Min/Max and VSEL/VSEH should satisfy following. (VDD/2)+Vix (Min.)-VSEL ≧25mV VSEH – ((VDD/2) +Vix (Max.)) ≧25mV 2. Extended range for Vix is only allowed for clock and if single-ended clock input signals CK and CK are monotonic with a single-ended swing VSEL / VSEH of at least VDD/2 ± 250mV, and when the differential slew rate of CK -CK is larger than 3V/ns.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 86/131 Slew Rate Definition for Differential Input Signals Input slew rate for differential signals (CK, CK and DQS, DQS ) are defined and measured as shown below. Differential Input Slew Rate Definition Differential input slew rate for rising edge (CK-CK & DQS- DQS ) VILdiffmax VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff Differential input slew rate for falling edge (CK-CK & DQS- DQS ) VIHdiffmin VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff The differential signal (i.e., CK-CK & DQS- DQS ) must be linear between these thresholds. Differential Input Slew Rate Definition for DQS, DQS and CK, CK Input Nominal Slew Rate Definition for single ended signals Delta TFdiff Delta TRdiff VIHdiffMin VILdiffMax

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 87/131 AC and DC Output Measurement Levels Single Ended AC and DC Output Levels Symbol Parameter Value Unit Notes VOH(DC) DC output high measurement level (for IV curve linearity) 0.8xVDDQ V VOM(DC) DC output mid measurement level (for IV curve linearity) 0.5xVDDQ V VOL(DC) DC output low measurement level (fro IV curve linearity) 0.2xVDDQ V VOH(AC) AC output high measurement level (for output SR) VTT+0.1xVDDQ V 1 VOL(AC) AC output low measurement level (for output SR) VTT-0.1xVDDQ V 1 Note: 1. The swing of ±0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2. Differential AC and DC Output Levels Symbol Parameter DDR3 Unit Notes VOHdiff(AC) AC differential output high measurement level (for output SR) +0.2 x VDDQ V 1 VOLdiff(AC) AC differential output low measurement level (for output SR) -0.2 x VDDQ V 1 Note: 1. The swing of ± 0.2 x VDDQ is based on approximately 50% of the static differential output high or low swing with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT=VDDQ/2 at each of the differential outputs. Single Ended Output Slew Rate Description Measured Defined by From To Single ended output slew rate for rising edge VOL( AC) VOH(AC) [VOH(AC)-VOL(AC)] / DeltaTRse Single ended output slew rate for falling edge VOH (AC) VOL(AC) [VOH(AC)-VOL(AC)] / DeltaTFse Note: Output slew rate is verified by design and characterization, and may not be subject to production test.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 88/131 D elta T F se D elta T F se V O H (A C ) V O L (A C ) V T T Single Ended Output Voltage (i.e. DQ) Single Ended Output Slew Rate Definition Output Slew Rate (single-ended) Parameter Symbol DDR3-1866 / 2133/ 2400 Unit Min. Max. Single-ended Output Slew Rate SRQse 2.5 5 V/ns Description: SR: Slew Rate. Q: Query Output (like in DQ, which stands for Data-in, Query -Output). se: Single-ended signals. For Ron = RZQ/7 setting. Note: 1. In two cases, a maximum slew rate of 6V/ns applis for a single DQ signal within a byte lane. Case 1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either form high to low or low to high) while all remaining DQ signals in the same byte lane are static (i.e. they stay at either high or low). Case 2 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high) while all remaining DQ signals in the same byte lane are seitching into the opposite direction (i.e. from low to high or high to low respectively). For the remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 89/131 Differential Output Slew Rate Description Measured Defined by From To Differential output slew rate for rising edge VOLdiff(AC) VOHdiff(AC) [VOHdiff(AC)-VOLdiff(AC)] / DeltaTRdiff Differential output slew rate for falling edge VOHdiff(AC) VOLdiff(AC) [VOHdiff(AC)-VOLdiff(AC)] / DeltaTFdiff Note: Output slew rate is verified by design and characterization, and may not be subject to production test. Differential Output Slew Rate Definition Differential Output Slew Rate Parameter Symbol DDR3-1866 / 2133/ 2400 Unit Min. Max. Single-ended Output Slew Rate SRQdiff 5 12 V/ns Description: SR: Slew Rate. Q: Query Output (like in DQ, which stands for Data-in, Query -Output). diff: Differential signals. For Ron = RZQ/7 setting. D e lta T F se D elta T F s e V O h d iff (A C ) V O L d iff (A C ) Differential Output Voltage (i.e. DQS-DQS)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 90/131 Reference Load for AC Timing and Output Slew Rate The following figure represents the effective reference load of 25 ohms used in defining the relevant AC timing parameters of the device as well as output slew rate measurements. It is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 91/131 Overshoot and Undershoot Specifications AC Overshoot/Undershoot Specification for Address and Control Pins Item DDR3-1866 DDR3-2133 DDR3-2400 Units Maximum peak amplitude allowed for overshoot area 0 .4 V Maximum peak amplitude allowed for undershoot area 0.4 V Maximum overshoot area above VDD 0.28 0.25 0.22 V-n s Maximum undershoot area below VSS 0.28 0.25 0.22 V- ns Note: 1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings. 2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings. AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Item DDR3-1866 DDR3-2133 DDR3-2400 Units Maximum peak amplitude allowed for overshoot area 0 .4 V Maximum peak amplitude allowed for undershoot area 0.4 V Maximum overshoot area above VDD 0.11 0.10 0.09 V-n s Maximum undershoot area below VSS 0.11 0.10 0.09 V- ns Note: 1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings. 2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings. Volts (V)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 92/131

34 Ohm Output Driver DC Electrical Characteristics

A Functional representation of the output buffer is shown as below. Output driver impedance RON is defined by the value of the external reference resistor RZQ as follows: RON 34 = R ZQ / 7 (nominal 34.4ohms +/-10% with nominal R ZQ =240ohms) The individual pull-up and pull-down resistors (RONPu and RON Pd ) are defined as follows: Output Driver: Definition of Voltages and Currents

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 93/131 Output Driver DC Electrical Characteristics, assuming R ZQ = 240ohms; entire operating temperature range; after proper ZQ calibration RON Nom Resistor Vout Min. Nom. Max. Unit Notes 34 ohms RON 34Pd VOLdc = 0.2 x VDDQ 0.6 1.0 1.1 R ZQ / 7 1,2,3 VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 R ZQ / 7 1,2,3 VOHdc = 0.8 x VDDQ 0.9 1.0 1.4 R ZQ / 7 1,2,3 RON 34Pu VOLdc = 0.2 x VDDQ 0.9 1.0 1.4 R ZQ / 7 1,2,3 VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 R ZQ / 7 1,2,3 VOHdc = 0.8 x VDDQ 0.6 1.0 1.1 R ZQ / 7 1,2,3 40 ohms RON 40pd VOLdc = 0.2 × VDDQ 0.6 1.0 1.1 R ZQ / 6 1,2,3 VOMdc = 0.5 × VDDQ 0.9 1.0 1.1 R ZQ / 6 1,2,3 VOHdc = 0.8 × VDDQ 0.9 1.0 1.4 R ZQ / 6 1,2,3 RON 40pu VOLdc = 0.2 × VDDQ 0.9 1.0 1.4 R ZQ / 6 1,2,3 VOMdc = 0.5 × VDDQ 0.9 1.0 1.1 R ZQ / 6 1,2,3 VOHdc = 0.8 × VDDQ 0.6 1.0 1.1 R ZQ / 6 1,2,3 Mismatch between pull-up and pull-down, MM PuPd VOMdc = 0.5 x VDDQ -10 +10 % 1,2,4 Note: 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity. 2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS. 3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 x VDDQ. Other calibration 4. Measurement definition for mismatch between pull-up and pull-down, MM PuPd : Measure RONPu and RONPd, but at 0.5 x VDDQ: MM PuPd = [RONPu - RONPd] / RONNom x 100

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 94/131 Output Driver Temperature and Voltage sensitivity If temperature and/or voltage after calibration, the tolerance limits widen according to the following table. Delta T = T - T(@calibration); Delta V = VDDQ - VDDQ(@calibration); VDD = VDDQ Note: dR ON dT and dR ON dV are not subject to production test but are verified by design and characterization. Output Driver Sensitivity Definition Items Min. Max. Unit RONPU@VOHdc 0.6 - dR ON dTH*lDelta Tl - dR ON dVH*lDelta Vl 1.1 + dR ON dTH*lDelta Tl - dR ON dVH*lDelta Vl R ZQ /7 RON@VOMdc 0.9 - dR ON dTM*lDelta Tl - dR ON dVM*lDelta Vl 1.1 + dR ON dTM*lDelta Tl - dR ON dVM*lDelta Vl R ZQ /7 RONPD@VOLdc 0.6 - dR ON dTL*lDelta Tl - dR ON dVL*lDelta Vl 1.1 + dR ON dTL*lDelta Tl - dR ON dVL*lDelta Vl RZQ /7 Output Driver Voltage and Temperature Sensitivity Speed Bin DDR3-1600 / 1866 Unit Items Min. Max. dRONdTM 0 1.5 %/ °C dRONdVM 0 0.13 %/mV dRONdTL 0 1.5 %/ °C dRONdVL 0 0.13 %/mV dRONdTH 0 1.5 %/ °C dRONdVH 0 0.13 %/mV Note: These parameters may not be subject to production test. They are verified by design and characterization.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 95/131 On-Die Termination (ODT) Levels and I-V Characteristics On-Die Termination effective resistance RTT is defined by bits A9, A6, and A2 of the MR1 Register. ODT is applied to the DQ, DM, DQS/ DQS . A functional representation of the on-die termination is shown in the following figure. The individual pull-up and pull-down resistors (RTT Pu and RTT Pd ) are defined as follows: On-Die Termination: Definition of Voltages and Currents The following table provides an overview of the ODT DC electrical characteristics. The values for RTT 60Pd120 , RTT 60Pu120 , RTT 120Pd240 , RTT 120Pu240 , RTT 40Pd80 , RTT 40Pu80 , RTT 30Pd60 , RTT 30Pu60 , RTT 20Pd40 , RTT 20Pu40 are not specification requirements, but can be used as design guide lines:

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 96/131 after proper ZQ calibration MR1 A9,A6,A2 RTT Resistor Vout Min. Nom. Max. Unit Notes 0,1,0 120 Ω RTT120Pd240 VOLdc = 0.2 x VDDQ 0.6 1 1.1 R ZQ 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ 1,2,3,4 VOHdc = 0.8 x VDDQ 0.9 1 1.4 R ZQ 1,2,3,4 RTT120Pu240 VOLdc = 0.2 x VDDQ 0.9 1 1.4 R ZQ 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ 1,2,3,4 VOHdc = 0.8 x VDDQ 0.6 1 1.1 R ZQ 1,2,3,4 RTT120 VIL(ac) to VIH(ac) 0.9 1 1.6 R ZQ /2 1,2,5 0, 0, 1 60 Ω RTT60Pd120 VOLdc = 0.2 x VDDQ 0.6 1 1.1 R ZQ /2 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /2 1,2,3,4 VOHdc = 0.8 x VDDQ 0.9 1 1.4 R ZQ /2 1,2,3,4 RTT60Pu120 VOLdc = 0.2 x VDDQ 0.9 1 1.4 R ZQ /2 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /2 1,2,3,4 VOHdc = 0.8 x VDDQ 0.6 1 1.1 R ZQ /2 1,2,3,4 RTT60 VIL(ac) to VIH(ac) 0.9 1 1.6 R ZQ /4 1,2,5 0, 1, 1 40 Ω RTT40Pd80 VOLdc = 0.2 x VDDQ 0.6 1 1.1 R ZQ /3 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /3 1,2,3,4 VOHdc = 0.8 x VDDQ 0.9 1 1.4 R ZQ /3 1,2,3,4 RTT40Pu80 VOLdc = 0.2 x VDDQ 0.9 1 1.4 R ZQ /3 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /3 1,2,3,4 VOHdc = 0.8 x VDDQ 0.6 1 1.1 R ZQ /3 1,2,3,4 RTT40 VIL(ac) to VIH(ac) 0.9 1 1.6 R ZQ /6 1,2,5 1, 0, 1 30 Ω RTT30Pd60 VOLdc = 0.2 x VDDQ 0.6 1 1.1 R ZQ /4 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /4 1,2,3,4 VOHdc = 0.8 x VDDQ 0.9 1 1.4 R ZQ /4 1,2,3,4 RTT30Pu60 VOLdc = 0.2 x VDDQ 0.9 1 1.4 R ZQ /4 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /4 1,2,3,4 VOHdc = 0.8 x VDDQ 0.6 1 1.1 R ZQ /4 1,2,3,4 RTT30 VIL(ac) to VIH(ac) 0.9 1 1.6 R ZQ /8 1,2,5 1, 0, 0 20 Ω RTT20Pd40 VOLdc = 0.2 x VDDQ 0.6 1 1.1 R ZQ /6 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /6 1,2,3,4 VOHdc = 0.8 x VDDQ 0.9 1 1.4 R ZQ /6 1,2,3,4 RTT20Pu40 VOLdc = 0.2 x VDDQ 0.9 1 1.4 R ZQ /6 1,2,3,4 0.5 x VDDQ 0.9 1 1.1 R ZQ /6 1,2,3,4 VOHdc = 0.8 x VDDQ 0.6 1 1.1 R ZQ /6 1,2,3,4 RTT20 VIL(ac) to VIH(ac) 0.9 1 1.6 R ZQ /12 1,2,5 Deviation of VM w.r.t. VDDQ/2, DVM -5 +5 % 1,2,5,6 Note: 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity. 2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS. 3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5 x VDDQ. Other calibration may be used to achieve the linearity spec shown above. 4. Not a specification requirement, but a design guide line. 5. Measurement definition for RTT: Apply VIH(ac) to pin under test and measure current / (VIH(ac)), then apply VIL(ac) to pin under test and measure current / (VIL(ac)) respectively. RTT = [VIH(ac) - VIL(ac)] / [I(VIH(ac)) - I(VIL(ac))] 6. Measurement definition for V M and DV M : Measure voltage (V M ) at test pin (midpoint) with no lead: Delta V M = [2V M / VDDQ -1] x 100

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 97/131 ODT Temperature and Voltage sensitivity If temperature and/or voltage after calibration, the tolerance limits widen according to the following table. Delta T = T - T(@calibration); Delta V = VDDQ - VDDQ(@calibration); VDD = VDDQ ODT Sensitivity Definition Min. Max. Unit RTT 0.9 - dRTTdT*lDelta Tl - dRTTdV*lDelta Vl 1.6 + dRTTdT*lDelta Tl + dRTTdV*lDelta Vl RZQ/2,4,6,8,12 ODT Voltage and Temperature Sensitivity Min. Max. Unit dRTTdT 0 1.5 %/ °C dRTTdV 0 0.15 %/mV Note: These parameters may not be subject to production test. They are verified by design and characterization. Test Load for ODT Timings Different than for timing measurements, the reference load for ODT timings is defined in the following figure. ODT Timing Reference Load

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 98/131 ODT Timing Definitions Definitions for tAON, tAONPD, tAOF, tAOFPD, and tADC are provided in the following table and subsequent figures. Symbol Begin Point Definition End Point Definition tAON Rising edge of CK -CK defined by the end point of ODTLon Extrapolated point at VSSQ tAONPD Rising edge of CK -CK with ODT being first registered high Extrapolated point at VSSQ tAOF Rising edge of CK -CK defined by the end point of ODTLoff End point: Extrapolated point at VRTT_Nom tAOFPD Rising edge of CK -CK with ODT being first registered low End point: Extrapolated point at VRTT_Nom tADC Rising edge of CK -CK defined by the end point of ODTLcnw, ODTLcwn4, or ODTLcwn8 End point: Extrapolated point at VRTT_Wr and VRTT_Nom respectively Reference Settings for ODT Timing Measurements Definition of tAON Measured Parameter RTT_Nom Setting RTT_Wr Setting VSW1[V] VSW2[V] Note tAON RZQ/4 NA 0.05 0.10 RZQ/12 NA 0.10 0.20 tAONPD RZQ/4 NA 0.05 0.10 RZQ/12 NA 0.10 0.20 tAOF RZQ/4 NA 0.05 0.10 RZQ/12 NA 0.10 0.20 tAOFPD RZQ/4 NA 0.05 0.10 RZQ/12 NA 0.10 0.20 tADC RZQ/12 RZQ/2 0.20 0.30

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 99/131 Definition of tAONPD Definition of tAOF

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 100/131 Definition of tAOFPD Definition of tADC

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 101/131 Input / Output Capacitance Symbol Parameter DDR3-1866 DDR3-2133 DDR3-2400 Units Note C IO Input/output capacitance (DQ, DM, DQS, C DCK Input capacitance delta, CK and CK 0 0.15 0 0.15 0 0.15 pF 2,3,4 C DDQS Input/output capacitance delta, DQS and DQS 0 0.15 0 0.15 0 0.15 pF 2,3,5 C I Input capacitance, CTRL, ADD, CMD input-only pins 0.75 C DI_CTRL Input capacitance delta, all CTRL input-only C DI_ADD_CMD Input capacitance delta, all ADD/CMD 2,3,9, C DIO Input/output capacitance delta, DQ, DM, DQS, C ZQ Input/output capacitance of ZQ pin - 3 - 3 - 3 pF 2,3,12 Note: 1. Although the DM pin has different functions, the loading matches DQ and DQS. 2. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is measured according to JEP147(“PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER(VNA)”) with VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary). VDD=VDDQ=1.5V, VBIAS=VDD/2 and ondie termination off. 3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here. 4. Absolute value of C CK -C CK . 5. Absolute value of C IO (DQS)-CIO (DQS ). 6. C I applies to ODT, CS , CKE, A0-A14, BA0-BA2, RAS ,CAS ,WE . 7. C DI_CTRL applies to ODT, CS and CKE. 8. C DI_CTRL =C I(CTRL)-0.5*(C I(CLK)+C I(CLK )). 9. C DI_ADD_CMD applies to A0-A14, BA0-BA2, RAS ,CAS and WE . 10. CDI_ADD_CMD =C I(ADD_CMD) - 0.5*(C I(CLK)+C I(CLK )). 11. CDIO =C IO (DQ,DM) - 0.5*(C IO (DQS)+C IO (DQS )). 12. Maximum external load capacitance on ZQ pin: 5 pF.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 102/131 IDD Specifications and Measurement Conditions IDD Specifications Symbol Parameter/Condition DDR3-1866 DDR3-2133 DDR3-2400 Unit IDD0 Operating Current 0 One Bank Activate -> Precharge 100 115 125 mA IDD1 Operating Current 1 One Bank Activate -> Read -> Precharge 110 120 130 mA IDD2P0 (SLOW) Precharge Power-Down Current Slow Exit - MR0 bit A12 = 0 15 20 25 mA IDD2P1(FAST) Precharge Power-Down Current Fast Exit - MR0 bit A12 = 1 35 40 45 mA IDD2Q Precharge Quiet Standby Current 60 65 70 mA IDD2N Precharge Standby Current 60 65 70 mA IDD2NT Precharge Standby ODT IDDQ Current 80 90 100 mA IDD3N Active Standby Current 75 80 85 mA IDD3P Active Power-Down Current Always Fast Exit 50 55 60 mA IDD4R Operating Current Burst Read 210 230 250 mA IDD4W Operating Current Burst Write 190 210 230 mA IDD5B Burst Refresh Current 120 130 140 mA IDD6 Self-Refresh Current: Normal Temperature Range (0-85°C) 10 12 15 mA IDD6ET Self-Refresh Current: Extended Temperature Range (0-95°C) 11 13 16 mA IDD7 All Bank Interleave Read Current 240 260 280 mA IDD8 Reset Low Current 10 12 12 mA

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 103/131 IDD Measurement Conditions Symbol Parameter/Condition IDD0 Operating One Bank Active-Precharge Current CKE: High; External clock: On; tCK, nRC, nRAS, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : High between ACT and PRE; Command, Address, Bank Address Inputs : partially toggling; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: Cycling with one bank active at a time: 0, 0, 1,1,2,2... Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD1 Operating One Bank Active-Read-Precharge Current CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1, 7) ; AL: 0; CS : High between ACT, RD and PRE; Command, Address, Bank Address Inputs, Data IO : partially toggling; Bank Activity: Cycling with one bank active at a time: 0, 0, 1,1,2,2... Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD2N Precharge Standby Current CKE : High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs : partially toggling; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD2P(0) Precharge Power-Down Current Slow Exit CKE: Low; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0; Pecharge Power Down Mode : Slow Exit (3) . IDD2P(1) Precharge Power-Down Current Fast Exit CKE: Low; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0; Pecharge Power Down Mode : Fast Exit (3) . IDD2Q Precharge Quiet Standby Current CKE : High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 104/131 IDD3N Active Standby Current CKE : High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs : partially toggling; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD3P Active Power-Down Current CKE: Low; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD4R Operating Burst Read Current CKE: High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1, 7) ; AL: 0; CS : High between RD; Command, Address, Bank Address Inputs: partially toggling; Data IO: seamless read data burst with different data between one burst and the next one; DM :stable at 0; Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD4W Operating Burst Write Current CKE: High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : High between WR; Command, Address, Bank Address Inputs: partially toggling; Data IO: seamless write data burst with different data between one burst and the next one; DM: stable at 0; Bank Activity: all banks open, WR commands cycling through banks: 0, 0, 1,1,2,2...; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at HIGH. IDD5B Burst Refresh Current CKE: High; External clock: On; tCK, CL, nRFC: see the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS : High between REF; Command, Address, Bank Address Inputs: partially toggling; Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: REF command every nRFC; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD6 Self Refresh Current: Normal Temperature Range TOPER : 0 - 85°C; Auto Self-Refresh (ASR) : Disabled (4) ; Self-Refresh Temperature Range (SRT): Normal(5); CKE: Low; External clock: Off; CK and CK : LOW; CL : the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS , Command, Address, Bank Address, Data IO: MID-LEVEL; DM :stable at 0; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: MID-LEVEL IDD6ET Self-Refresh Current: Extended Temperature Range (optional) (6) TOPER : 0 - 95°C; Auto Self-Refresh (ASR) : Disabled (4) ; Self-Refresh Temperature Range (SRT): Extended (5) ; CKE: Low; External clock: Off; CK and CK : LOW; CL : the table of Timings used for IDD and IDDQ; BL: 8(1) ; AL: 0; CS , Command, Address, Bank Address, Data IO: MID-LEVEL; DM : stable at 0; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 105/131 IDD7 Operating Bank Interleave Read Current CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1, 7) ; AL: CL-1; CS : High between ACT and RDA; Command, Address, Bank Address inputs: partially toggling; Data IO: read data bursts with different data between one burst and the next one; DM :stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing; Output Buffer and RTT: Enabled in Mode Registers (2) ; ODT Signal: stable at 0. IDD8 RESET Low Current RESET: LOW; External clock: Off; CK and CK : LOW; CKE: FLOATING; CS , Command, Address, Bank Address, Data IO: FLOATING; ODT Signal: FLOATING RESET Low current reading is valid once power is stable and RESET has been LOW for at least 1ms. Note: 1. Burst Length: BL8 fixed by MRS: set MR0 A[1,0] = 00B. 2. Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B. 3. Pecharge Power Down Mode: set MR0 A12 = 0B for Slow Exit or MR0 A12 = 1B for Fast Exit. 4. Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature. 5. Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature range. 6. Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device. 7. Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 106/131 IDD0 Measurement-Loop Pattern 1 CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High

0 ACT 0 0 1 1 0 0 00 0 0 0 0 -

1, 2 D, D 1 0 0 0 0 0 00 0 0 0 0 - 3, 4 D#, D# 1 1 1 1 0 0 00 0 0 0 0 - … repeat pattern 1...4 until nRAS - 1, truncate if necessary nRAS PRE 0 0 1 0 0 0 00 0 0 0 0 - … repeat pattern 1...4 until nRC - 1, truncate if n ecessary 1*nRC + 0 ACT 0 0 1 1 0 0 00 0 0 F 0 - 1*nRC + 1, 2 D, D 1 0 0 0 0 0 00 0 0 F 0 - 1*nRC + 3, 4 D#, D# 1 1 1 1 0 0 00 0 0 F 0 - … repeat pattern nRC + 1,...,4 until 1*nRC + nRAS - 1, truncate if necessary 1*nRC + nRAS PRE 0 0 1 0 0 0 00 0 0 F 0 - … repeat nRC + 1,...,4 until 2*nRC - 1, truncate if necessary 1 2*nRC repeat Sub-Loop 0, use BA[2:0] = 1 instead 2 4*nRC repeat Sub-Loop 0, use BA[2:0] = 2 instead 3 6*nRC repeat Sub-Loop 0, use BA[2:0] = 3 instead 4 8*nRC repeat Sub-Loop 0, use BA[2:0] = 4 instead 5 10*nRC repeat Sub-Loop 0, use BA[2:0] = 5 instead 6 12*nRC repeat Sub-Loop 0, use BA[2:0] = 6 instead 7 14*nRC repeat Sub-Loop 0, use BA[2:0] = 7 instead Note: 1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL. 2. DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 107/131 IDD1 Measurement-Loop Pattern CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High 1, 2 D, D 1 0 0 0 0 0 00 0 0 0 0 - 3, 4 D#, D# 1 1 1 1 0 0 00 0 0 0 0 - … repeat pattern 1...4 until nRCD - 1, truncate if necessary nRCD RD 0 1 0 1 0 0 00 0 0 0 0 00000000 … repeat pattern 1...4 until nRAS - 1, truncate if necessary nRAS PRE 0 0 1 0 0 0 00 0 0 0 0 - … repeat pattern 1...4 until nRC - 1, truncate if n ecessary 1*nRC + 0 ACT 0 0 1 1 0 0 00 0 0 F 0 - 1*nRC + 1, 2 D, D 1 0 0 0 0 0 00 0 0 F 0 - 1*nRC + 3, 4 D#, D# 1 1 1 1 0 0 00 0 0 F 0 - … repeat pattern nRC + 1,..., 4 until nRC + nRCD - 1, truncate if necessary 1*nRC + nRCD RD 0 1 0 1 0 0 00 0 0 F 0 00110011 … repeat pattern nRC + 1,..., 4 until nRC + nRAS - 1, truncate if necessary 1*nRC + nRAS PRE 0 0 1 0 0 0 00 0 0 F 0 - … repeat pattern nRC + 1,..., 4 until 2 * nRC - 1, truncate if necessary 1 2*nRC repeat Sub-Loop 0, use BA[2:0] = 1 instead 2 4*nRC repeat Sub-Loop 0, use BA[2:0] = 2 instead 3 6*nRC repeat Sub-Loop 0, use BA[2:0] = 3 instead 4 8*nRC repeat Sub-Loop 0, use BA[2:0] = 4 instead 5 10*nRC repeat Sub-Loop 0, use BA[2:0] = 5 instead 6 12*nRC repeat Sub-Loop 0, use BA[2:0] = 6 instead 7 14*nRC repeat Sub-Loop 0, use BA[2:0] = 7 instead Note: 1. DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL. 2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 108/131 IDD2N and IDD3N Measurement-Loop Pattern CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High

0 D 1 0 0 0 0 0 0 0 0 0 0 -

1 D 1 0 0 0 0 0 0 0 0 0 0 -

2 D# 1 1 1 1 0 0 0 0 0 F 0 -

3 D# 1 1 1 1 0 0 0 0 0 F 0 -

1 4-7 repeat Sub-Loop 0, use BA[2:0] = 1 instead 2 8-11 repeat Sub-Loop 0, use BA[2:0] = 2 instead 3 12-15 repeat Sub-Loop 0, use BA[2:0] = 3 instead 4 16-19 repeat Sub-Loop 0, use BA[2:0] = 4 instead 5 20-23 repeat Sub-Loop 0, use BA[2:0] = 5 instead 6 24-27 repeat Sub-Loop 0, use BA[2:0] = 6 instead 7 28-31 repeat Sub-Loop 0, use BA[2:0] = 7 instead Note: 1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL. 2. DQ signals are MID-LEVEL. IDD2NT and IDDQ2NT Measurement-Loop Pattern 1 CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High 1 4-7 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1 2 8-11 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 2 3 12-15 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3 4 16-19 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 4 5 20-23 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5 6 24-27 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6 7 28-31 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7 Note: 1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL. 2. DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 109/131 IDD4R and IDDQ4R Measurement-Loop Pattern CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High

0 RD 0 1 0 1 0 0 00 0 0 0 0 00000000

1 D 1 0 0 0 0 0 00 0 0 0 0 -

2, 3 D#, D# 1 1 1 1 0 0 00 0 0 0 0 -

4 RD 0 1 0 1 0 0 00 0 0 F 0 00110011

5 D 1 0 0 0 0 0 00 0 0 F 0 -

6, 7 D#, D# 1 1 1 1 0 0 00 0 0 F 0 - 1 8-15 repeat Sub-Loop 0, but BA[2:0] = 1 2 16-23 repeat Sub-Loop 0, but BA[2:0] = 2 3 24-31 repeat Sub-Loop 0, but BA[2:0] = 3 4 32-39 repeat Sub-Loop 0, but BA[2:0] = 4 5 40-47 repeat Sub-Loop 0, but BA[2:0] = 5 6 48-55 repeat Sub-Loop 0, but BA[2:0] = 6 7 56-63 repeat Sub-Loop 0, but BA[2:0] = 7 Note: 1. DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL. 2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL. IDD4W Measurement-Loop Pattern CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High

0 WR 0 1 0 0 1 0 00 0 0 0 0 00000000

1 D 1 0 0 0 1 0 00 0 0 0 0 -

2, 3 D#, D# 1 1 1 1 1 0 00 0 0 0 0 -

4 WR 0 1 0 0 1 0 00 0 0 F 0 00110011

5 D 1 0 0 0 1 0 00 0 0 F 0 -

6, 7 D#, D# 1 1 1 1 1 0 00 0 0 F 0 - 1 8-15 repeat Sub-Loop 0, but BA[2:0] = 1 2 16-23 repeat Sub-Loop 0, but BA[2:0] = 2 3 24-31 repeat Sub-Loop 0, but BA[2:0] = 3 4 32-39 repeat Sub-Loop 0, but BA[2:0] = 4 5 40-47 repeat Sub-Loop 0, but BA[2:0] = 5 6 48-55 repeat Sub-Loop 0, but BA[2:0] = 6 7 56-63 repeat Sub-Loop 0, but BA[2:0] = 7 Note: 1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL. 2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 110/131 IDD5B Measurement-Loop Pattern CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High 0 0 REF 0 0 0 1 0 0 0 0 0 0 0 - 1, 2 D, D 1 0 0 0 0 0 00 0 0 0 0 - 3, 4 D#, D# 1 1 1 1 0 0 00 0 0 F 0 - 5….8 repeat cycles 1...4, but BA[2:0] = 1 9….12 repeat cycles 1...4, but BA[2:0] = 2 13….16 repeat cycles 1...4, but BA[2:0] = 3 17….20 repeat cycles 1...4, but BA[2:0] = 4 21….24 repeat cycles 1...4, but BA[2:0] = 5 25….28 repeat cycles 1...4, but BA[2:0] = 6 29….32 repeat cycles 1...4, but BA[2:0] = 7 2 33….nRFC-1 repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary. Note: 1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL. 2. DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 111/131 IDD7 Measurement-Loop Pattern 1 ATTENTION: Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9 CK, /CK CKE Sub-Loop Cycle Number Command /CS /RAS /CAS /WE ODT BA[2:0] A[14:11] A[10] A[9:7] A[6:3] A[2:0] Data 2 toggling Static High

1 RDA 0 1 0 1 0 0 00 1 0 0 0 00000000

2 D 1 0 0 0 0 0 00 0 0 0 0 -

… repeat above D Command until nRRD - 1 nRRD ACT 0 0 1 1 0 1 00 0 0 F 0 - nRRD + 1 RDA 0 1 0 1 0 1 00 1 0 F 0 00110011 nRRD + 2 D 1 0 0 0 0 1 00 0 0 F 0 - … repeat above D Command until 2 * nRRD - 1 2 2*nRRD repeat Sub-Loop 0, but BA[2:0] = 2 3 3*nRRD repeat Sub-Loop 1, but BA[2:0] = 3 4 4*nRRD D 1 0 0 0 0 3 00 0 0 F 0 - Assert and repeat above D Command until nFAW - 1, if necessary 5 nFAW repeat Sub-Loop 0, but BA[2:0] = 4 6 nFAW + nRRD repeat Sub-Loop 1, but BA[2:0] = 5 7 nFAW + 2*nRRD repeat Sub-Loop 0, but BA[2:0] = 6 8 nFAW + 3*nRRD repeat Sub-Loop 1, but BA[2:0] = 7 9 nFAW + 4*nRRD D 1 0 0 0 0 7 00 0 0 F 0 - Assert and repeat above D Command until 2 * nFAW - 1, if necessary 2*nFAW + 0 ACT 0 0 1 1 0 0 00 0 0 F 0 - 2*nFAW + 1 RDA 0 1 0 1 0 0 00 1 0 F 0 00110011 2*nFAW + 2 D 1 0 0 0 0 0 00 0 0 F 0 - Repeat above D Command until 2 * nFAW + nRRD - 1 2*nFAW+nRRD ACT 0 0 1 1 0 1 00 0 0 0 0 - 2*nFAW+nRRD+1 RDA 0 1 0 1 0 1 00 1 0 0 0 00000000 2*nFAW+nRRD+2 D 1 0 0 0 0 1 00 0 0 0 0 - repeat above D Command until 2 * nFAW + 2 * nRRD -1 12 2*nFAW+2*nRRD repeat Sub-Loop 10, but BA[2:0] = 2 13 2*nFAW+3*nRRD repeat Sub-Loop 11, but BA[2:0] = 3 14 2*nFAW+4*nRRD D 1 0 0 0 0 3 00 0 0 0 0 - Assert and repeat above D Command until 3 * nFAW - 1, if necessary 15 3*nFAW repeat Sub-Loop 10, but BA[2:0] = 4 16 3*nFAW+nRRD repeat Sub-Loop 11, but BA[2:0] = 5 17 3*nFAW+2*nRRD repeat Sub-Loop 10, but BA[2:0] = 6 18 3*nFAW+3*nRRD repeat Sub-Loop 11, but BA[2:0] = 7 19 3*nFAW+4*nRRD D 1 0 0 0 0 7 00 0 0 0 0 - Assert and repeat above D Command until 4 * nFAW - 1, if necessary Note: 1. DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL. 2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 112/131 Speed Bins DDR3-2400 (16-16-16) Unit Parameter Min Max CL6 CWL5 2.5 3.3 ns CWL6 Reserved ns CWL7/8/9/10 Reserved ns CL7 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7 Reserved ns CWL8/9/10 Reserved ns CL8 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7 Reserved ns CWL8/9/10 Reserved ns CL9 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CWL9/10 Reserved ns CL10 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CWL9 Reserved ns CWL10 Reserved ns CL11 CWL5/6/7 Reserved ns CWL8 1.25 < 1.5 ns CWL9 Reserved ns CWL10 Reserved ns CL12 CWL5/6/7/8 Reserved ns CWL9 Reserved ns CWL10 Reserved ns CL13 CWL5/6/7/8 Reserved ns CWL9 1.07 < 1.25 ns CWL10 Reserved ns CL14 CWL5/6/7/8/9 Reserved ns CWL10 0.938 < 1.07 ns CL16 CWL5/6/7/8/9 Reserved ns CWL12 0.833 < 0.937 ns Supported CL 6,7,8,9,10,11,13,14,16 nCK Supported CWL 5,6,7,8,9,10,12 nCK

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 113/131 Fundamental AC Specifications – Operating Frequency Speed Bins DDR3-2133 (14-14-14) Unit Parameter Min Max CL6 CWL5 2.5 3.3 ns CWL6 Reserved ns CWL7/8/9/10 Reserved ns CL7 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7 Reserved ns CWL8/9/10 Reserved ns CL8 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7 Reserved ns CWL8/9/10 Reserved ns CL9 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CWL9/10 Reserved ns CL10 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CWL9 Reserved ns CWL10 Reserved ns CL11 CWL5/6/7 Reserved ns CWL8 1.25 < 1.5 ns CWL9 Reserved ns CWL10 Reserved ns CL12 CWL5/6/7/8 Reserved ns CWL9 Reserved ns CWL10 Reserved ns CL13 CWL5/6/7/8 Reserved ns CWL9 1.07 < 1.25 ns CWL10 Reserved ns CL14 CWL5/6/7/8/9 Reserved ns CWL10 0.938 < 1.07 ns Supported CL 6,7,8,9,10,11,13,14 nCK Supported CWL 5,6,7,8,9,10 nCK

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 114/131 Fundamental AC Specifications – Operating Frequency Speed Bins DDR3-1866 (13-13-13) Unit Parameter Min Max tCK (avg) CL5 CWL5 Reserved ns CWL6/7/8/9 Reserved ns CL6 CWL5 2.5 3.3 ns CWL6 Reserved ns CWL7/8/9 Reserved ns CL7 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7/8/9 Reserved ns CL8 CWL5 Reserved ns CWL6 1.875 < 2.5 ns CWL7 Reserved ns CWL8/9 Reserved ns CL9 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CWL9 Reserved ns CL10 CWL5/6 Reserved ns CWL7 1.5 < 1.875 ns CWL8 Reserved ns CL11 CWL5/6/7 Reserved ns CWL8 1.25 < 1.5 ns CWL9 Reserved ns CL12 CWL5/6/7/8 Reserved ns CWL9 Reserved Reserved ns CL13 CWL5/6/7/8 Reserved ns CWL9 1.07 < 1.25 ns Supported CL 6,7,8,9,10,11,13 nCK Supported CWL 5,6,7,8,9 nCK

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 115/131 Fundamental AC Specifications Notes 1. The CL setting and CWL setting result in tCK(avg).MIN and tCK(avg).MAX requirements. When making a selection of tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting. 2. tCK(avg).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC standard next ‘Supported CL’, where tCK(avg) = 3.0 ns should only be used for CL = 5 calculation. 3. tCK(avg).MAX limits: Calculate tCK(avg) = tAA.MAX / CL SELECTED and round the resulting tCK(avg) down to the next to CL SELECTED. 4. ‘Reserved’ settings are not allowed. User must program a different value. 5. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. 6. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. 7. Any DDR3-2133 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. 8. For devices supporting optional down binning to CL=7 and CL=9, tAA/tRCD/tRPmin must be 13.125 ns. SPD settings must be programmed to match. For example, DDR3-1333(9-9-9) devices supporting down binning to DDR3-1066(7-7-7) should program 13.125ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600(11-11-11) devices supporting down binning to DDR3-1333(9-9-9) or DDR3-1066(7-7-7)should program 13.125ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin( Byte 20). Once tRP (Byte 20) us origranned ti 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 49.125ns (tRASmin +tRPmin = 36ns + 13.125ns) for DDR3-1333(9-9-9) and 48.125ns (tRASmin + tRPmin = 35ns + 13.125ns) for DDR3-1600(11-11-11). 9. For CL5 support, refer to DIMM SPD information. DRAM is required to support CL5. CL5 is not mandatory in SPD coding. 10. For devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/tRPmin must be 13.125ns. SPD setting must be programed to match. For example, DDR3 -1866(13-13-13) devices supporting down binning to DDR3-1600(11-11-11) or DDR3 -1333(9-9-9) or 1066(7-7-7) should program 13.125ns in SPD bytes for tAAmin(byte16), tRCDmin(Byte18) and tRPmin (byte20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 47.125ns (tRASmin + tRPmin = 34 ns+ 13.125 ns). Fundamental AC Specifications – Core Timing Speed Bins DDR3-2400 (16-16-16) DDR3-2133 (14-14-14) DDR3-1866 (13-13-13) Unit Parameter Min Max Min Max Min Max tAA 13.32 20 13.09 20 13.91 20 ns tRCD 13.32 - 13.09 - 13.91 - ns tRP 13.32 - 13.09 - 13.91 - ns tRC 47.32 - 46.09 - 47.91 - ns tRAS 34 9*tREFI 33 9*tREFI 34 9*tREFI ns

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 116/131 Electrical Characteristics & AC Timing Timing Parameter for (DDR3-1866, DDR3-2133, DDR3-2400) Clock Timing Minimum Clock Cycle Time (DLL off mode) tCK (DLL_off) 8 - 8 - 8 - ns Average Clock Period tCK(avg) Refer to “Fundamental AC Specifications” Absolute Clock Period tCK(abs) Min.: tCK(avg)min + tJIT(per)min Max.: tCK(avg)max + tJIT(per)max Absolute clock HIGH pulse width tCH(abs) 0.43 - 0.43 - 0.43 - tCK(avg) Absolute clock LOW pulse width tCL(abs) 0.43 - 0.43 - 0.43 - tCK(avg) Clock Period Jitter JIT(per) -60 60 -50 50 -40 40 p s Clock Period Jitter during DLL locking period JIT(per, lck) -50 50 -40 40 -30 30 ps Cycle to Cycle Period Jitter tJIT(cc) 120 100 90 ps Cycle to Cycle Period Jitter during DLL locking period JIT(cc, lck) 100 80 70 ps Duty Cycle Jitter tJIT(duty) - - - - - - - Cumulative error across n = 2, 14…..49,50 cycles tERR(nper) tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max ps Data Timing DQS, DQS to DQ skew, per group, per access tDQSQ - 85 75 60 ps DQ output hold time from DQS, DQS tQH 0.38 - 0.38 - 0.38 - tCK(avg) DQ low-impedance time from CK, CK tLZ(DQ) -390 195 -360 180 -330 160 ps DQ high-impedance time from CK, CK tHZ(DQ) 195 180 160 ps Data setup time to DQS, DQS referenced to Vih(ac) / Vil(ac) levels tDS(base) tDS(base) (AC135) 68 - 53 - 40 - ps Data hold time from DQS, DQS referenced to Vih(dc) / Vil(dc) levels tDH(base) DQ and DM Input pulse width for each input tDIPW 320 280 - 250 - ps

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 117/131 Data Strobe Timing DQS, DQS differential READ Preamble tRPRE 0.9 Note 19 0.9 Note 19 0.9 Note 19 tCK(avg) DQS, DQS differential READ Postamble tRPST 0.3 Note 11 0.3 Note 11 0.3 Note 11 tCK(avg) DQS, DQS differential output high time tQSH 0.4 - 0.4 - 0.4 - tCK(avg) DQS, DQS differential output low time tQSL 0.4 - 0.4 - 0.4 - tCK(avg) DQS, DQS differential WRITE Preamble tWPRE 0.9 - 0.9 - 0.9 - tCK(avg) DQS, DQS differential WRITE Postamble tWPST 0.3 - 0.3 - 0.3 - tCK(avg) DQS, DQS rising edge output access time from rising CK, CK tDQSCK -195 195 -180 180 -160 160 ps DQS and DQS low-impedance time (Referenced from RL-1) tLZ(DQS) -390 195 -360 180 -330 160 ps DQS and DQS high-impedance time (Referenced from RL+BL/2) tHZ(DQS) - 195 - 180 - 160 ps DQS, DQS differential input low pulse width DQS, DQS differential input high pulse width DQS, DQS rising edge to CK, CK rising edge DQS, DQS falling edge setup time to CK, CK rising edge tDSS 0.18 - 0.18 - 0.18 - tCK(avg) DQS, DQS falling edge hold time from CK, CK rising edge tDSH 0.18 - 0.18 - 0.18 - tCK(avg) Command and Address Timing DLL locking time tDLLK 512 - 512 - 512 - nCK Internal READ Command to PRECHARGE Command delay tRTP tRTPmin.: max(4tCK, 7.5ns) tRTPmax. - Delay from start of internal write transaction to internal read command tWTR tWTRmin.: max(4tCK, 7.5ns) tWTRmax.: - WRITE recovery time tWR 15 - 15 - 15 - ns Mode Register Set command cycle time tMRD 4 - 4 - 4 - nCK Mode Register Set command update delay tMOD tMODmin.: max(12tCK, 15ns) tMODmax.: - ACT to internal read or write delay time tRCD Refer to “Fundamental AC Specifications” PRE command period tRP ACT to ACT or REF command period tRC ACTIVE to PRECHARGE command period tRAS

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 118/131 CAS to CAS command delay tCCD 4 - 4 - 4 - nCK Auto precharge write recovery + precharge time tDAL(min) WR + roundup(tRP / tCK(avg)) nCK Multi-Purpose Register Recovery Time tMPRR 1 - 1 - 1 - nCK ACTIVE to ACTIVE command period for 2KB page size tRRD max(4tCK , 6ns) - max(4tC K, 6ns) - max(4tCK , 6ns) - Four activate window for 2KB page size tFAW 35 - 35 - 35 - ns Command and Address setup time to CK, CK referenced to Vih(ac) / Vil(ac) levels tIS(base) tIS(base) tIS(base) (AC125) 150 - 135 - 125 - ps Command and Address hold time from CK, CK referenced to Vih(dc) / Vil(dc) levels tIH(base) DC100 100 - 95 - 99 - ps Control and Address Input pulse width for each input tIPW 535 - 470 - 425 - ps Calibration Timing Power-up and RESET calibration time tZQinit tZQinit, min: max(512 tCK, 640ns) tZQinit, max: - Normal operation Full calibration time tZQoper tZQoper, min: max(256 tCK, 320ns) tZQoper, max: - Normal operation Short calibration time tZQCS tZQCSmin: max(64 tCK, 80ns) tZQCSmax: - Reset Timing Exit Reset from CKE HIGH to a valid command tXPR tXPRmin: max(5 tCK, tRFC(min) + 10ns) tXPRmax: - Self Refresh Timings Exit Self Refresh to commands not requiring a locked DLL tXS tXSmin: max(5 tCK, tRFC(min) + 10ns) tXSmax: - Exit Self Refresh to commands requiring a locked DLL tXSDLL tXSDLLmin: tDLLK(min) tXSDLLmax: - nCK Minimum CKE low width for Self Refresh entry to exit timing tCKESR tCKESRmin: tCKE(min) + 1 tCK tCKESRmax: - Valid Clock Requirement after Self Refresh Entry (SRE) or Power-Down Entry (PDE) tCKSRE tCKSREmin: max(5 tCK, 10 ns) tCKSREmax: - Valid Clock Requirement before Self Refresh Exit (SRX) or Power-Down Exit (PDX) or Reset Exit tCKSRX tCKSRXmin: max(5 tCK, 10 ns) tCKSRXmax: -

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 119/131 Power Down Timings Exit Power Down with DLL on to any valid command; Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL tXP tXPmin: max(3tCK, 6ns) tXPmas: - CKE minimum pulse width tCKE tCKE min: max(3tCK, 5ns) tCKEmax: - Exit Precharge Power Down with DLL frozen to commands requiring a locked DLL tXPDLL tXPDLLmin: max(10 tCK, 24ns) tXPDLLmax: - Command pass disable delay tCPDED 2 - 2 - 2 - nCK Power Down Entry to Exit Timing tPD tPDmin: tCKE(min) tPDmax: 9*tREFI Timing of ACT command to Power Down entry tACTPDEN 1 - 2 - 2 - nCK Timing of PRE or PREA command to Power Down entry tPRPDEN 1 - 2 - 2 - nCK Timing of RD/RDA command to Power Down entry tRDPDEN tRDPDENmin: RL+4+1 tRDPDENmax: - nCK Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) tWRPDEN tWRPDENmin: WL + 4 + (tWR / tCK(avg)) tWRPDENmax: - nCK Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) tWRAPDEN tWRAPDENmin: WL+4+WR+1 tWRAPDENmax: - nCK Timing of WR command to Power Down entry (BC4MRS) tWRPDEN tWRPDENmin: WL + 2 + (tWR / tCK(avg)) tWRPDENmax: - nCK Timing of WRA command to Power Down entry (BC4MRS) tWRAPDEN tWRAPDENmin: WL + 2 +WR + 1 tWRAPDENmax: - nCK Timing of REF command to Power Down entry tREFPDEN 1 - 2 - 2 - nCK Timing of MRS command to Power Down entry tMRSPDEN tMRSPDENmin: tMOD(min) tMRSPDENmax: - ODT Timings ODT turn on Latency ODTLon WL-2=CWL+AL-2 nCK ODT turn off Latency ODTLoff WL-2=CWL+AL-2 nCK ODT high time without write command or with write command and BC4 ODTH4 ODTH4min: 4 ODTH4max: - nCK ODT high time with Write command and BL8 ODTH8 ODTH8min: 6 ODTH8max: - nCK Asynchronous RTT turn-on delay (Power-Down with DLL frozen) tAONPD 2 8.5 2 8.5 2 8.5 ns Asynchronous RTT turn-off delay (Power-Down with DLL frozen) tAOFPD 2 8.5 2 8.5 2 8.5 ns RTT turn-on tAON -195 195 -180 180 -160 160 ps RTT_Nom and RTT_WR turn-off

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 120/131 Write Leveling Timings First DQS/ DQS rising edge after write leveling mode is programmed tWLMRD 40 - 40 - 40 - nCK DQS/ DQS delay after write leveling mode is programmed tWLDQSEN 25 - 25 - 25 - nCK Write leveling setup time from rising CK, CK crossing to rising DQS, DQS crossing tWLS 140 - 125 - 100 - ps Write leveling hold time from rising DQS, DQS crossing to rising CK, CK crossing tWLH 140 - 125 - 100 - ps Write leveling output delay tWLO 0 7.5 0 7.5 0 7.5 ns Write leveling output error tWLOE 0 2 0 2 0 2 ns Jitter Notes 1. Unit “tCK(avg)” represents the actual tCK(avg) of the input clock under operation. Unit “nCK” represents one clock cycle of the input clock, counting the actual clock edges. Ex) tMRD=4 [nCK] means; if one Mode Register Set command is registered at Tm, anther Mode Register Set command may be registered at Tm+4, even if (Tm+4-Tm) is 4 x tCK(avg) + tERR(4per), min. 2. These parameters are measured from a command/address signal (CKE, CS ,RAS ,CAS ,WE , ODT, BA0, A0, A1, etc) transition edge to its respective clock signal (CK/CK ) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not. 3. These parameters are measured from a data strobe signal (DQS(L/U), DQS(L/U) ) crossing to its respective clock signal (CK, CK ) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not. 4. These parameters are measured from a data signal (DM(L/U), DQ(L/U)0, DQ(L/U)1, etc.) transition edge to its respective data strobe signal (DQS(L/U), DQS(L/U) ) crossing. 5. For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{tPARAM[ns] / tCK(avg)[ns]}, which is in clock cycles, assuming all input clock jitter specifications are satisfied. 6. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper), act of the input clock, where 2 <= m <=12. (Output derating is relative to the SDRAM input clock.) 7. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input clock. (Output deratings are relative to the SDRAM input clock.) Timing Parameter Notes 1. Actual value dependent upon measurement level definitions which are TBD. 2. Commands requiring a locked DLL are: READ ( and RAP) are synchronous ODT commands. 3. The max values are system dependent. 4. WR as programmed in mode register. 5. Value must be rouned-up to next higher integer value. 6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI. 7. For definition of RTT-on time tAON See “Timing Parameters”. 8. For definition of RTT-off time tAOF See “Timing Parameters”. 9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer. 10. WR in clock cycles are programmed in MR0. 11. The maximum read postamble is bounded by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on the right side. 12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input clock jitter, this parameter needs to be derated by TBD. 13. Value is only valid for RON34. 14. Single ended signal parameter.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 121/131 15. tREFI depends on T OPER . 16. tIS(base) and tIH(base) values are for 1V/ns CMD/ADD single-ended slew rate and 2V/ns CK, CK differential slew rate. Note for DQ and DM signals, VREF(DC)=VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC). 17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, DQS differential slew rate. Note for DQ and DM signals, VREF(DC)=VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC). 18. Start of internal write transaction is defined as follows: For BL8 (fixed by MRS and on-the-fly): Rising clock edge 4 clock cycles after WL. For BC4 (on-the-fly): Rising clock edge 4 clock cycles after WL. For BC4 (fixed by MRS): Rising clock edge 2 clock cycles after WL. 19. The maximum preamble is bound by tLZ (DQS) max on the left side and tDQSCK(max) on the right side. 20. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power-down IDD spec will not be applied until finishing those operations. 21. Although CKE is allowed to be registered LOW after a REFRESH command once tREFPDEN(min) is satisfied, there are cases where additional time such as tXPDLL(min) is also required. 22. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function. 23. One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT impedance error within 64 nCK for all speed bins assuming the maximum sensitivities specified in the “Output Driver Voltage and Temperature Sensitivity” and “ODT Voltage and Temperature Sensitivity” tables. The appropriate interval between ZQCS commands can be determined from these tables and other application-specific parameters. One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by the following formula: ZQCorrection / [(Tsens x Tdriftrate) + (Vsens x Vdriftrate)] where Tsens = max(dRTTdT, dRONdTM) and Vsens = max(dRTTdV, dRONdVM) define the SDRAM temperature and voltage sensitivities. For example, if Tsens = 1.5%/C, Vsens = 0.15%/Mv, Tdriftrate = 1 C/sec and Vdriftrate = 15Mv/sec, then the interval between ZQCS commands is calculated as 0.5 / [(1.5x1)+(0.15x15)] = 0.133 ~ 128ms 24. n = from 13 cycles to 50 cycles. This row defines 38 parameters. 25. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge. 26. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge. 27. The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional 100ps of derating to accommodate for the lower altemate threshold of 150mV and another 25ps to account for the earlier reference point [(175mV – 150mV) / 1V/ns].

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 122/131 Address / Command Setup, Hold, and Derating For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) and tIH(base) value to the delta tIS and delta tIH derating value respectively. Example: tIS (total setup time) = tIS(base) + delta tIS Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIH(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded ‘VREF (dc) to ac region’, use nominal slew rate for derating value. If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to ac region’, the slew rate of the tangent line to the actual signal from the ac level to dc level is used for derating value. Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first crossing of VREF(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between shaded ‘dc to VREF(dc) region’, use nominal slew rate for derating value. If the actual signal is earlier than the nominal slew rate line any- where between shaded ‘dc to VREF(dc) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value. For a valid transition the input signal has to remain above/below VIH/IL(ac) for some time tVAC. Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). ADD/CMD Setup and Hold Base-Values for 1V/ns Symbol Reference DDR3-1866 DDR3-2133 DDR3-2400 Unit s tIS(base) AC175 VIH/L(ac) - - - ps tIS(base) AC150 VIH/L(ac) - - - ps tIS(base) AC135 VIH/L(ac) 65 60 60 ps tIS(base) AC125 VIH/L(ac) 150 135 135 ps ftIH(base) DC100 VIH/L(dc) 100 95 95 ps Note: AC/DC referenced for 1V/ns Address/Command slew rate and 2V/ns differential CK-CK slew rate.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 123/131 Derating values DDR3-1866 / 2133/ 2400 tIS/tIH – AC/DC based AC135 Threshold Derating values DDR3-1866/ 2133/ 2400 tIS/tIH –AC/DC based AC125 Threshold 2 68 50 68 50 68 50 76 58 84 66 92 74 100 84 108 100 1.5 45 34 45 34 45 34 53 42 61 50 69 58 77 68 85 84 1 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 2 -4 2 -4 2 -4 10 4 18 12 26 20 34 30 42 46 0.8 3 -10 3 -10 3 -10 11 -2 19 6 27 14 35 24 43 40 0.7 6 -16 6 -16 6 -16 14 -8 22 0 30 8 38 18 46 34 0.6 9 -26 9 -26 9 -26 17 -18 25 -10 33 -2 41 8 49 24 0.5 5 -40 5 -40 5 -40 13 -32 21 -24 29 -16 37 -6 45 10 0.4 -3 -60 -3 -60 -3 -60 6 -52 14 -44 22 -36 30 -26 38 -10 CMD/ADD Slew rate (V/ns) 4.0 V/ns 3.0 V/ns CK,/CK Differential Slew Rate AC 135 Threshold -> VIH (ac) = VREF (dc) + 135mV, VIL (ac) = VREF(dc) - 135mV 2 63 50 63 50 63 50 71 58 79 66 87 74 95 84 103 100 1.5 42 34 42 34 42 34 50 42 58 50 66 58 74 68 82 84 1 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 4 -4 4 -4 4 -4 12 4 20 12 28 20 36 30 44 46 0.8 6 -10 6 -10 6 -10 14 -2 22 6 30 14 38 24 46 40 0.7 11 -16 11 -16 11 -16 19 -8 27 0 35 8 43 18 51 34 0.6 16 -26 16 -26 16 -26 24 -18 32 -10 40 -2 48 8 56 24 0.5 15 -40 15 -40 15 -40 23 -32 31 -24 39 -16 47 -6 55 10 0.4 13 -60 13 -60 13 -60 21 -52 29 -44 37 -36 45 -26 53 -10 CMD/ADD Slew rate (V/ns) 4.0 V/ns 3.0 V/ns CK,/CK Differential Slew Rate AC 125 Threshold -> VIH (ac) = VREF (dc) + 125mV, VIL (ac) = VREF(dc) - 125mV

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 124/131 Required time tVAC above VIH(AC) {below VIL(AC)} for ADD/CMD transition Slew Rate [V/ns] DDR3-1866 / 2133 135mV [ps] 125mV [ps] >2.0 168 173 2 168 173 1.5 145 152 1 100 110 0.9 85 96 0.8 66 79 0.7 42 56 0.6 10 27

0.5 Note Note

<0.5 Note Note Note: Rising input signal shall become equal to or greater than VIH(ac) level and falling input signal shall become equal to or less than VIL(ac) level.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 125/131 Data Setup, Hold, and Slew Rate De-rating For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDH(base) and tDH(base) value to the delta tDS and delta tDH derating value respectively. Example: tDS (total setup time) = tDS(base) + delta tDS Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIH(ac)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded ‘VREF(dc) to ac region’, use nominal slew rate for derating value. If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to ac region’, the slew rate of the tangent line to the actual signal from the ac level to dc level is used for derating value. Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first crossing of VREF(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between shaded ‘dc level to VREF(dc) region’, use nominal slew rate for derating value. If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value. For a valid transition the input signal has to remain above/below VIH/IL(ac) for some time tVAC. Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rates in between the values listed in the following tables, the derating values may be obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 126/131 Derating values DDR3-1866 / 2133/ 2400 tDS/tDH – AC/DC based AC135 Threshold Note: Cell contents shaded in gray are defined as ‘not supported’. 3 23 17 23 17 23 17 23 17 23 17 - - - - - - - - - - - - - - 2.5 - - 14 10 14 10 14 10 14 10 14 10 - - - - - - - - - - - - AC 135 Threshold -> VIH (ac) = VREF (dc) + 135mV, VIL (ac) = VREF(dc) - 135mV DC 100 Threshold -> VIH (dc) = VREF (dc) + 100mV, VIL (dc) = VREF(dc) - 100mV DQ Slew rate (V/ns) DQS, /DQS Differential Slew Rate

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 127/131 Required time tVAC above VIH(ac) {below VIL(ac)} for valid DQ transition Slew Rate [V/ns] DDR3-1866 DDR3-2133 DDR3-2400 135mV[ps] 135mV[ps] 135mV[ps] min max min max min max 2 93 - 73 - 73 - 1.5 70 - 50 - 50 - 1 25 - 5 - 5 -

0.9 Note - Note - Note -

0.8 Note - Note - Note -

0.7 - - - - - - 0.6 - - - - - - 0.5 - - - - - - <0.5 - - - - - - Note: Rising input signal shall become equal to or greater than VIH(ac) level and falling input signal shall become equal to or less than VIL(ac) level.

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 128/131 PACKING DIMENSIONS 96-BALL DDR SDRAM ( 7.5x13.5 mm ) e D EE1 "A" PIN #1 SEATING PLANE DETAIL : "A" CAVITY A SOLDER BALL ob Index PIN #1 Index Symbol Dimension in mm Dimension in inch Min Norm Max Min Norm Max A 1.00 0.039 D 1 6.40 BSC 0.252 BSC E1 12.00 BSC 0.472 BSC e 0.80 BSC 0.031 BSC Controlling dimension : Millimeter. (Revision date : Sep 22 2015)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 129/131 PACKING DIMENSIONS 96-BALL DDR SDRAM ( 7.5x13 mm ) e D EE1 "A" Pin# A1 SEATING PLANE DETAIL : "A" A SOLDER BALL Index Side Pin# A1 Index "B" Pin# A1 Index DETAIL : "B" b o Symbol Dimension in mm Dimension in inch Min Norm Max Min Norm Max A 1.00 0.039 D 1 6.40 BSC 0.252 BSC E1 12.00 BSC 0. 472 BSC e 0.80 BSC 0.031 BSC Controlling dimension : Millimeter. (Revision date : Nov172 2017)

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 130/131

Revision History

0.1 2015.10.16 Original 0.2 2016.07.12 1. Modify IDD Specifications 2. Modify Tstg Rating 0.3 2016.08.30 Add Speed 2133Mbps 1.0 2016.11.16 1. Delete "Preliminary" 2. Delete speed grade -1600 Mbps(11-11-11) 3. Add speed grade -2400Mbps (16-16-16) 4. Revised Program Functions 5. Revised CAS Latency 1.1 2016.12.20 Revised IDD Specifications 1.2 2017.03.14 1. Modify pin name. 2.Modifiy Function Description. 3. Corrected MR0 definition Fig. 2. Correct the specification of tIH,tREFPDEN 1.4 2018.01.08 Correct typo

ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Jan. 2018 Revision : 1.4 131/131 Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.