M12JZ47

SM12JZ47A TOSHIBA | Alldatasheet

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SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A 2001-07-10 1 TOSHIBA BI −DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A AC POWER CONTROL APPLICATIONS /G6c/G20Repetitive Peak off−State Voltage : V DRM = 400, 600V /G6c/G20R.M.S On−State Current : I T (RMS) = 12A /G6c/G20High Commutating (dv / dt) /G6c/G20Isolation Voltage : V Isol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM12GZ47 SM12GZ47A 400 Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SM12JZ47 SM12JZ47A V DRM 600 V R. M. S. On−tate Current (Full Sine Waveform TC = 72°C) IT (RMS) 12 A 120 (50Hz) Peak One Cylce Surge On−State Current (Non−Repetitive) ITSM 132 (60Hz) A I2t Limit Value I 2t 72 A 2s Critical Rate of Rise of On-State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation P GM 5 W Average Gate Power Dissipation P G (AV) 0.5 W Peak Gate Voltage V FGM 10 V Peak Gate Current I GM 2 A Junction Temperature T j −40~125 °C Storage Temperature Range T stg −40~125 °C Isolation Voltage (AC, t = 1min.) V Isol 1500 V Unit: mm JEDEC ― JEITA ― TOSHIBA 13 −10H1A Weight: 1.7g Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current I DRM V DRM = Rated ― ― 20 µA III T2 ( −) , Gate (−) ― ― 1.5 Gate Trigger Voltage IV VGT VD = 12V, RL = 20Ω V II T2 (+) , Gate ( −) ― ― 30 III T2 ( −) , Gate (−) ― ― 30 SM12GZ47 SM12JZ47 IV T2 ( −) , Gate (+) ― ― ― II T2 (+) , Gate ( −) ― ― 20 III T2 ( −) , Gate (−) ― ― 20 Gate Trigger Current SM12GZ47A SM12JZ47A IV IGT VD = 12V, RL = 20Ω mA Peak On−State Voltage V TM I TM = 17A ― ― 1.5 V Gate Non−Trigger Voltage V GD V D = Rated, Tc = 125°C 0.2 ― ― V Holding Current I H V D = 12V, ITM = 1A ― ― 50 mA Thermal Resistance R th (j−c) Junction to Case, AC ― ― 3.0 °C / W SM12GZ47 SM12JZ47 ― 300 ― Critical Rate of Rise of Off−State Voltage SM12GZ47A SM12JZ47A dv / dt VDRM = Rated, Tj = 125°C Exponential Rise ― 200 ― V / µs SM12GZ47 SM12JZ47 10 ― ― Critical Rate of Rise of Off−State Voltage at Commutation SM12GZ47A SM12JZ47A (dv / dt) c V DRM = 400V, Tj = 125°C (di / dt) c = − 6.5A / ms 4 ― ― V / µs MARKING *NUMBER SYMBOL MARK *1 TOSHIBA PRODUCT MARK SM12GZ47, SM12GZ47A M12GZ47 SM12JZ47, SM12JZ47A M12JZ47 TYPE SM12GZ47A, SM12JZ47A A Example 8A: January 1998 8B: February 1998 8L: December 1998

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SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A 2001-07-10 5 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE