LTV-725F

LTV-725F TENAND | Alldatasheet

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Technical content

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only

FEATURES

• High collector-emitter voltage ( VCEO : 300V ) * High current transfer ratio ( CTR : MIN. 1,000 at I F =1mA, V CE =2V) * High isolation voltage between input and output ( V ISO 5,000Vrms ) * Low collector dark current ( I CEO : MAX. 10 A at V CE 200V ) * Dual-in-line package : LTV-725F * Wide lead spacing package : LTV-725FM * Surface mounting package : LTV-725FS * Tape and reel packaging : LTV-725FS-TA1 * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 209049 ) * NEMKO approved ( No. P99102464 ) * DEMKO approved ( No. 99-04182) * SEMKO approved ( No. 9943380 / 01-20 ) * VDE approved ( No. 094722 ) Part No. : LTV-725F ( M, S, S-TA1 ) Page : 1 of 9 BNS-OD-C131/A4 http://www.tenand.com 深圳市腾恩科技有限公司 SHENZHEN TENAND TECHNOLOGY CO.,LTD http://www.tenand.com 深圳市腾恩科技有限公司 SHENZHEN TENAND TECHNOLOGY CO.,LTD

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-725F : LTV-725FM : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-725F ( M, S, S-TA1 ) Page : 2o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-725FS : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-725F ( M, S, S-TA1 ) Page : 3o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-725FS-TA1 : Description Symbol Dimensions in mm ( inches ) Tape wide W 16 ± 0.3 ( .63 ) Pitch of sprocket holes P 0 4 ± 0.1 ( .15 ) Distance of compartment F 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) Distance of compartment to compartment P 1 12 ± 0.1 ( .472 ) Part No. : LTV-725F ( M, S, S-TA1 ) Page : 4o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current I F 50 mA Reverse Voltage V R 6 V INPUT Power Dissipation P 70 mW OUTPUT Collector - Emitter Voltage V CEO 300 V Collector Current I C 150 mA Emitter-Collector Voltage V ECO 0.1 V Collector Power Dissipation P C 300 mW Total Power Dissipation P tot 350 mW *1 Isolation Voltage V iso 5,000 Vrms Operating Temperature T opr -25 ~ +100 °C Storage Temperature T stg -40 ~ +125 °C *2 Soldering Temperature T sol 260 °C *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-725F ( M, S, S-TA1 ) Page : 5o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage V F — 1.2 1.4 V I F=10mA Reverse Current I R — — 10 µA VR=4V INPUT Terminal Capacitance C t — 30 250 pF V=0, f=1KHz Collector Dark Current I CEO — — 10 -6 A V CE=200V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 300 — — V IC=0.1mA IF=0 OUTPUT Emitter-Collector Breakdown Voltage BVECO 0.1 — — V IE=10µA IF=0 Collector Current I C 10 40 150 mA * Current Transfer Ratio CTR 1,000 4,000 15,000 % IF=1mA VCE=2V Collector-Emitter Saturation Voltage VCE(sat) — — 1.2 V IF=20mA IC=100mA Isolation Resistance R ISO 5×1010 1×1011 — Ω DC500V 40 ~ 60% R.H. Floating Capacitance C f — 0.6 1 pF V=0, f=1MHz Cut-Off Frequency f c 1 7 — kHz VCE=2V, IC=20mA RL=100Ω, -3dB Response Time (Rise) t r — 100 300 µs TRANSFER CHARACTERISTICS Response Time (Fall) t f — 20 100 µs VCE=2V, IC=20mA RL=100Ω * CTR I I 100%C F Part No. : LTV-725F ( M, S, S-TA1 ) Page : 6o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Ambient Temperature Current vs. Ambient Temperature Fig.6 Relative Current Transfer Ratio Fig.4 Current Transfer Ratio vs. Forward Fig.2 Collector Power Dissipation vs. Ambient temperature Ta ( C) o Collector-emitter Voltage Fig.5 Collector Current vs. Fig.3 Forward Current vs. Forward Forward current (m 0.5 100 1.91.3 Forward voltage (V) 60 C 100 C 80 C o o o o 40 C o 20 C Voltage Collector current Ic (m 100 Pc(MAX.) IF=0 . 5 m A Collector-emitter voltage V (V) 21 345 CE 3mA5mA 1mA 0.7mA 1.5mA 2mA Relative current transfer ratio (% Current transfer ratio CTR (% -25 Fig.1 Forward Current vs. Ambient Temperature Forward current I (m F 40 5002 5 7 5 1 0 0 Collector power dissipation Pc (m W 125 Ambient temperature Ta ( C) o Ambient temperature Ta ( C) 20 40 60 0.2 0.4 0.8 0.6 1.0 100 O Forward current (mA) 0.1 1000 2000 5000 VCE=2 V 3000 4000 -25 100 150 200 250 300 5025 75 350 125100 IF=1 m A VCE=2 V Part No. : LTV-725F ( M, S, S-TA1 ) Page : 7o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Collector-emitter Saturation Voltage Fig.8 Collector Dark Current vs. Temperature Fig.9 Response Time vs. Load vs. Ambient Temperature F Ic= 100mA I = 20mA Ambient temperature Ta ( C) Ambient temperature Ta ( C) 20 100 1.00 1.20 10080604020 10.1 1000 OO Resistance 1000 806040 V = 200VCE 1.04 1.08 1.12 1.16 1.14 1.10 1.06 1.02 1.18 100 0.02 100 500 VCE=2 V IC=2 0 m A Load resistance RL (k ) Input Output Input Output Vcc td tr tf ts 90% 10% Output Vcc Test Circuit for Response Time Test Circuit for Frequency Response tr td tf ts Collector-em itter saturation voltage VCE(sat) (V) Collector dark current ICEO (nA) Response tim e ( Voltage gain Av (dB) Frequency f (kHz) 100 Fig.10 Frequency Response -20 -15 -10 1010.1 VCE=2 V IC= 20mA RL= 1k 100 RLRD RLRD Part No. : LTV-725F ( M, S, S-TA1 ) Page : 8o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm Part No. : LTV-725F ( M, S, S-TA1 ) Page : 9o f9 BNS-OD-C131/A4