LTE42005S PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of June 1992

1997 Feb 21

NPN microwave power transistor

1997 Feb 21 2

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S

FEATURES

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION
  • Common emitter class-A linear power amplifiers up to 4.2 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. PINNING - SOT440A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange Fig.1 Simplified outline and symbol. Marking code: 502 columns e c b MAM131 Top view QUICK REFERENCE DATA Microwave performance up to Tmb =2 5°C in a common emitter class-A amplifier. MODE OF OPERATION f (GHz) VCE (V) IC (mA) PL1 (mW) G po (dB) Zi (Ω ) ZL (Ω ) Class-A (CW) linear 4.2 18 110 ≥450 ≥6.6 100 + j40 4 + j4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1997 Feb 21 3

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage R BE = 100Ω− 35 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 250 mA Ptot total power dissipation T mb ≤ 75 °C − 4W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature at 0.3 mm from case; t = 10 s − 235 °C Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided R BE ≤ 100 Ω . (3) Second breakdown limit (independent of temperature). Fig.2 DC SOAR. handbook, halfpage103 102 MBH902 VCE (V) 15 20 25 30 35 IC (mA) (3) (1) (2) VCEO Fig.3 Power dissipation derating as a function of mounting-base temperature. handbook, halfpage −50 200 0 50 100 150 MGD966 Ptot (W) Tmb (°C)

1997 Feb 21 4

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb =2 5°C unless otherwise specified SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb thermal resistance from junction to mounting-base Tj=7 5°C 36 K/W R th mb-h thermal resistance from mounting-base to heatsink Tj=7 5°C; note 1 0.7 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current VCB = 20 V; IE =0 −− 0.1 µA VCB = 40 V; IE =0 −− 0.25 mA ICER emitter cut-off current V CE = 35 V; RBE = 100Ω− − 1m A IEBO emitter cut-off current V EB = 1.5 V; IC =0 −− 0.2 µA hFE DC current gain V CE =5V ; IC = 110 mA 15 − 150 C cb collector-base capacitance VCB = 20 V; VEB = 1.5 V; IE =IC = 0; f = 1 MHz − 0.5 − pF C ce collector-emitter capacitance VCE = 20 V; VEB = 1.5 V; IE =IC = 0; f = 1 MHz − 1.5 − pF C eb emitter-base capacitance VCB = 10 V; VEB =1V ; IC =IE = 0; f = 1 MHz − 6.5 − pF

1997 Feb 21 5

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S Table 1 Scattering parameters: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb =2 5°C; Zo =5 0Ω ; typical values. (The figures given between brackets are values in dB). f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)

1997 Feb 21 6

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S

APPLICATION INFORMATION

Microwave performance up to Tmb =2 5°C in a common emitter class-A test circuit; note 1. Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. I C and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with P L1. MODE OF OPERATION f (GHz) VCE (V)(2) IC (mA) (2) PL1 (mW) (3) G po (dB)(4) Zi (Ω ) ZL (Ω ) Class-A (CW) 4.2 18 110 ≥450 (26.5) typ. 550 (27.4) ≥6.6 typ. 7.2 100 + j40 4 + j4 Fig.4 Prematching test circuit board. Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 1.6 mm. Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (εr = 2.4); thickness: 0.25 mm. handbook, full pagewidth output VSWR <3 z0 = 50 Ω input VSWR <3 z0 = 50 Ω /,/, /,/, /,/,/,/,/,/,/, /,/,/,/,/,/,/, /,/, /, /,/, /, /,/,/, /,/,/, /, /,/, /,/, /,/, /,/, /,/, /,/, /,/, /,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, 4.5 10 15.5 10.4 3 2 2.8 11.5 13 5.5 0.8 MSA097

1997 Feb 21 7

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S Fig.5 Load power as a function of input power. f = 4.2 GHz; Tmb =2 5°C. VCE = 18 V; IC = 110 mA (both regulated). (1) Gpo = 7.2 dB. handbook, halfpage typ 600 400 200 50 100 150 MGL012 PL (mW) Pi (mW) (1) PL1

1997 Feb 21 8

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S PACKAGE OUTLINE Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 Fig.6 SOT440A. andbook, full pagewidth MBC888 O 0.25 M (1)3.4 3.2 2.9 2.0 7.1 14.2 5.1 5.5 max 4.5 min 4.5 min 0.25 M1.0 0.1 3.45 2.90 20.5 max seating plane 1.7 max 4.5 max

1997 Feb 21 9

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

1997 Feb 21 10

Philips Semiconductors Product specification NPN microwave power transistor LTE42005S NOTES