LTC7004

LTC7004 LINER | Alldatasheet

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Technical content

7004faFor more information www.linear.com/LTC7004 TYPICAL APPLICATION

FEATURES

APPLICATIONS

DESCRIPTION

The LT C®7004 is a fast high side N-channel MOSFET gate driver that operates from input voltages up to 60V. It contains an internal charge pump that fully enhances an external N-channel MOSFET switch, allowing it to remain on indefinitely. Its powerful driver can easily drive large gate capacitances with very short transition times, making it well suited for both high frequency switching applications or static switch applications that require a fast turn-on and/or turn-off time. The LTC7004 is available in the thermally-enhanced 10-lead MSOP package. High Voltage, High Side Switch with 100% Duty Cycle n Wide Operating VIN: Up to 60V n 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Turn-On and Turn-Off Times with 35ns Propagation Delays n Internal Charge Pump for 100% Duty Cycle n Adjustable Turn-On Slew Rate n Gate Driver Supply from 3.5V to 15V n Adjustable VIN Overvoltage Lockout n Adjustable Driver Supply VCC Undervoltage Lockout n CMOS Compatible Input n Thermally Enhanced, High Voltage Capable 10-Lead n Static Switch Driver n Load and Supply Switch Driver n Electronic Valve Driver n High Frequency High Side Gate Driver L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Analog Devices, Inc. All other trademarks are the property of their respective owners.

7004 TA01a

3.5V TO 15V 0.1µF LTC7004 Driving a 1nF Capacitive Load 10ns/DIV V INP 2V/DIV V TG-TS 5V/DIV

7004 TA01b

7004fa For more information www.linear.com/LTC7004 PIN CONFIGURATIONABSOLUTE MAXIMUM RATINGS Supply Voltages BST 15V 80V V te 6) Operating Junction Temperature Range (Notes 2, 3, 4) LTC7004E, 125°C 150°C 150°C 150°C Lead Temperature (Soldering, 10 sec) MSOP P (Note 1) ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC7004EMSE#PBF LTC7004EMSE#TRPBF L THBV 10-Lead Plastic MSOP –40°C to 125°C LTC7004IMSE#PBF LTC7004IMSE#TRPBF L THBV 10-Lead Plastic MSOP –40°C to 125°C LTC7004HMSE#PBF LTC7004HMSE#TRPBF L THBV 10-Lead Plastic MSOP –40°C to 150°C LTC7004MPMSE#PBF LTC7004MPMSE#TRPBF L THBV 10-Lead Plastic MSOP –55°C to 150°C Consult L TC Marketing for parts specified with wider operating temperature ranges. *Temperature grades are identified by a label on the shipping container . For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear .com/tapeandreel/. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. V CC VCCUV GND INP OVLO NC BST TS TGUP TGDN TOP VIEW MSE PACKAGE 10-LEAD PLASTIC MSOP GND TJMAX = 150°C, θJA = 45°C/W , θJC = 10°C/W EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB http://www.linear .com/product/LTC7004#orderinfo

7004faFor more information www.linear.com/LTC7004

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input Supplies TS Operating Voltage Range 0 60 V VCC Supply Current (Note 5) ON Mode Sleep Mode VBST-TS = 13V VINP = 4V VINP = 0.4V µA μA V CC UVLO V CC Undervoltage Lockout VCCUV = OPEN VCC Rising VCC Falling Hysteresis VCCUV = 0V VCC Rising VCC Falling Hysteresis VCCUV = 1.5V VCC Rising VCC Falling Hysteresis l l l l 6.5 5.8 3.1 2.8 9.7 9.1 7.0 6.4 600 3.5 3.2 300 10.5 9.9 600 7.5 6.9 3.7 3.4 10.9 10.3 V V mV V V mV V V mV Bootstrapped Supply (BST-TS) V BST-TS VTG Above VTS with INP = 3V (DC) VCC = VTS = 7V, IBST = 0µA VCC = VTS = 10V, IBST = 0µA VTS = 60V, IBST = 0µA l l V V V Charge Pump Output Current V TS = 20V, VBST-TS = 10V l –15 –30 µA BST-TS Floating UVLO VBST-TS Rising VBST-TS Falling 3.1 2.8 V V Output Gate Driver (TG) TG Pull-Up Resistance V CC = VBST = 12V l 2.2 7 Ω TG Pull-Down Resistance VCC = VBST = 12V l 1 4 Ω tr Output Rise Time 10% to 90%, CL = 1nF 10% to 90%, CL = 10nF ns ns t f Output Fall Time 10% to 90%, CL = 1nF 10% to 90%, CL = 10nF ns ns t PLH tPHL Input to Output Propagation Delay VINP Rising, CL = 1nF VINP Falling, CL = 1nF l l ns ns Operation V IH VIL Input Threshold Voltages VINP Rising VINP Falling Hysteresis l l 1.7 1.3 1.6 400 2.2 1.8 V V mV Input Pull-Down Resistance V INP = 1V 1 MΩ OVLO Pin Threshold Voltage Rising Falling Hysteresis 1.16 1.05 1.21 1.10 110 1.26 1.15 V V mV OVLO Pin Leakage Current V OVLO = 1.3V –100 0 100 nA VVCCUV Pull-Up Current VVCCUV = 1V –11.3 –10 8.7 µA The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VCC = VBST = 10V, VTS = GND = 0V, unless otherwise noted.

7004fa For more information www.linear.com/LTC7004 Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC7004 is tested under pulsed load conditions such that T J ≈ TA. The LTC7004E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC7004I is guaranteed over the –40°C to 125°C operating junction temperature range, the LTC7004H is guaranteed over the –40°C to 150°C operating junction temperature range and the LTC7004MP is tested and guaranteed over the –55°C to 150°C operating junction temperature range. High junction temperatures degrade operating lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors. Note 3: The junction temperature (T J, in °C) is calculated from the ambient temperature (TA, in °C) and power dissipation (PD, in Watts) according to the formula: TJ = TA + (PD • θJA), where θJA is 45°C/ W. Note 4: This IC includes over temperature protection that is intended to protect the device during momentary overload conditions. The maximum rated junction temperature will be exceeded when this protection is active. Operation above the specified absolute maximum operating junction temperature may impair device reliability or permanently damage the device. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See Applications Information. Note 6: Do not apply a voltage or current source to these pins. They must be connected to capacitive loads only; otherwise permanent damage may occur . TYPICAL PERFORMANCE CHARACTERISTICS VCC Supply Current vs VCC Supply Voltage Driver On Resistance vs VBST-TS Voltage Input Threshold Voltage vs VCC Supply Voltage TA = 25°C, unless otherwise noted. V BST-TS = 13V V CCUV = 0V V CC VOL TAGE (V) V CC SUPPL Y CURRENT (µA)

7004 G01

V CCUV = 0V TGUP TGDN V BST-TS (V) R DSON (/uni03A9)

7004 G02

V IN = V CC RISING FALLING V CC VOL TAGE (V) 0.5 1.0 1.5 2.0 2.5 3.0 THRESHOLD VOL TAGE (V)

7004 G03

7004faFor more information www.linear.com/LTC7004 TYPICAL PERFORMANCE CHARACTERISTICS Charge Pump No-Load Output Voltage vs VTS Charge Pump Load Regulation Charge Pump Output Current vs V TS OVLO Threshold Voltage vs Temperature V CCUV Lockout vs Temperature Driver On Resistance vs Temperature V CC Supply Current vs Temperature Input Threshold Voltage vs Temperature V BST-TS Floating UVLO Voltage vs Temperature TA = 25°C, unless otherwise noted. I BST = 0µA V CC = 4V V CC = 5V V CC = 6V V CC = 7V V CC ≥ 8V V TS (V) V BST - V TS (V)

7004 G04

V CC = 7V V BST–TS = 10V 25°C 150°C V TS (V) –45.0 –35.0 –25.0 –15.0 –5.0 5.0 I BST (µA)

7004 G06

TEMPERATURE (°C) –50 100 150 1.05 1.10 1.15 1.20 1.25 THRESHOLD VOL TAGE (V)

7004 G07

V CCUV = OPEN RISING FALLING TEMPERATURE (°C) –50 100 150 5.0 5.5 6.0 6.5 7.0 7.5 8.0 V CCUV LOCKOUT (V)

7004 G08

V BST–TS = 12V TGUP TGDN TEMPERATURE (°C) –50 100 150 RESISTANCE (/uni03A9)

7004 G09

V IN = 10V TEMPERATURE (°C) –50 100 150 CURRENT (µA)

7004 G10

V IN = 10V RISING FALLING TEMPERATURE (°C) –50 100 150 0.5 1.0 1.5 2.0 2.5 3.0 THRESHOLD VOL TAGE (V)

7004 G11

TEMPERATURE (°C) –50 100 150 2.0 2.5 3.0 3.5 4.0 THRESHOLD VOL TAGE (V)

7004 G12

V CC = 4V VTS = 4V VTS = 6V VTS = 8V VTS = 10V VTS = 12V I BST (µA) –20 –40 –60 –80 V BST TS (V)

7004 G05

7004fa For more information www.linear.com/LTC7004 PIN FUNCTIONS VCC (Pin 1): Main Supply Pin. A bypass capacitor with a minimum value of 0.1µF should be tied between this pin and GND. VCCUV (Pin 2): V CC Supply Undervoltage Lockout. A resistor on this pin sets the reference for the Gate Drive undervoltage lockout. The voltage on this pin in the range of 0.5V to 1.5V is multiplied by seven to be the undervolt- age lockout for the Gate Drive (V CC pin). Short to ground to set the minimum gate drive UVLO of 3.5V. Leave open to set gate drive UVLO to 7.0V GND (Pin 3, Exposed Pad Pin 11): Ground. The exposed paddle must be soldered to the PCB for rated electrical and thermal performance. INP (Pin 4): Input Signal. CMOS compatible input refer - ence to GND that sets the state of TGDN and TGUP pins (see Applications Information). INP has an internal 1MΩ pull-down to GND to keep TGDN pulled to TS during startup transients. OVLO (Pin 5): Overvoltage Lockout Input. Connect to the input supply through a resistor divider to set the lockout level. A voltage on this pin above 1.21V causes TGDN to be pulled to TS. Normal operation resumes when the voltage on this pin decreases below 1.11V. OVLO should be tied to GND when not used. TGDN (Pin 6): High Current Gate Driver Pull-Down. This pin pulls down to TS. For the fastest turn-off, tie this pin directly to the gate of the external high side MOSFET . TGUP (Pin 7): High Current Gate Driver Pull-Up. This pin pulls up to BST . Tie this pin to TGDN for maximum gate drive transition speed. A resistor can be connected between this pin and the gate of the external MOSFET to control the inrush current during turn-on. See Applications Information. TS (Pin 8): Top (High Side) source connection or GND if used in ground referenced applications. BST (Pin 9): High Side Bootstrapped Supply. An external capacitor with a minimum value of 0.1µF should be tied between this pin and TS. Voltage swing on this pin is 12V to (V TS + 12V). NC (Pin 10): No Connect. This pin should be floated.

7004faFor more information www.linear.com/LTC7004 BLOCK DIAGRAM 7004 BD CHARGE PUMP LEVEL SHIFT UP LOGIC TGDN TS NC TGUP BST CB 0.1µ D1* LOAD 1.21V 10µA 2.3V OVLO INP GND *OPTIONAL VCCUV VIN 0V TO 60V VCC 3.5V TO 15V VCC PCH NCH

7004fa For more information www.linear.com/LTC7004 OPERATION The LTC7004 is designed to receive a ground-referenced, low voltage digital input signal, INP and quickly drive a high side N-channel power MOSFET whose drain can be up to 60V above ground. The LTC7004 is capable of driv- ing a 1nF load using a 12V bootstrapped supply voltage BST–VTS) with 35ns of propagation delay and fast rise/fall times. The high gate drive voltage reduces external power losses associated with external MOSFET on-resistance. The strong drivers not only provide fast turn on and off times but hold the TGUP and TGDN to TS voltages in the desired state in the presence of high slew rate transients which can occur driving inductive loads at high voltages. Internal Charge Pump The LTC7004 contains an internal charge pump that enables the MOSFET gate drive to have 100% duty cycle. The charge pump regulates the BST-TS voltage to 12V reducing external power losses associated with external MOSFET on-resistance. The charge pump uses the higher voltage of TS or V CC as the source for the charge. Protection Circuitry When using the LTC7004, care must be taken not to exceed any of the ratings specified in the Absolute Maximum Ratings section. As an added safeguard, the LTC7004 incorporates an overtemperature shutdown feature. If the junction temperature reaches approximately 180°C, the LTC7004 will enter thermal shutdown mode and TGDN will be pulled to TS. After the part has cooled below 160°C, TGDN will be allowed to go back high. The overtemperature level is not production tested. The LTC7004 is guaranteed to start at temperatures below 150°C. The LTC7004 additionally implements protection fea - tures which prohibit TGDN from going high when V CC or (VBST–VTS) are not within proper operating ranges. By using a resistive divider from VIN to ground the OVLO pin can serve as a precise input supply voltage overvoltage lockout. TGDN is pulled to TS when OVLO rises above 1.21V, so OVLO can be configured to limit switching to a specific range on input supply voltages. V CC contains an undervoltage lockout feature that will pull TGDN to TS and is configured by the V CCUV pin. If VCCUV is open, TGDN is pulled to TS until V CC is greater than 7.0V. By using a resistor from VCCUV to ground, the rising undervoltage lockout on VCC can be adjusted from 3.5V to 10.5V. An additional internal undervoltage lockout is included that will pull TGDN to TS when the floating voltage from BST to TS is less than 3.1V (typical). (Refer to Block Diagram) TIMING DIAGRAM INPUT (INP) OUTPUT (TG-TS) INPUT RISE/FALL TIME < 10ns t PLH t r t PHL t f 90% 10% V IH V IL 7004 TD

high frequency, high voltage applications. other unknown transient events. voltages higher than power supply or lower than ground. is inversely proportional to its gate overdrive (VGS – VTH). pulled to TS and the external MOSFET will be turned off. Figure 1. Simplified Output Stage Figure 2. Adjustable OV Lockout

7004 F01

the OVLO pin is required to be tied directly to ground. Figure 3. External BST Diode

7004 F03

will be more current than the charge pump can overcome.

• BAS116 Series, Multiple Vendors
• BAS416, Nexperia
• BAQ34, Vishay Semiconductors
• CMOD6001, Central Semiconductor VCC Undervoltage Comparator The LTC7004 contains an adjustable undervoltage lockout (UVLO) on the VCC voltage that pulls TGDN to TS and can be easily programmed using a resistor (RVCCUV) between the VCCUV pin and ground. The voltage generated on VCCUV by RVCCUV and the internal 10µA current source set the VCC UVLO. The rising VCC UVLO is internally limited within the range of 3.5V and 10.5V. If VCCUV is open the rising VCC UVLO is set internally to 7.0V. The value of resistor for a particular rising V CC UVLO can be selected using Figure 4 or the following equation: RDRVUV =Rising VCC UVLO 70µA Where 3.5V < Rising VCC UVLO < 10.5V. MOSFET Selection The most important parameters in high voltage applications for MOSFET selection are the breakdown voltage BVDSS, on-resistance RDS(ON) and the safe operating area, SOA. The MOSFET , when off, will see the full input range of the input power supply plus any additional ringing than can occur when driving an inductive load. External conduction losses are minimized when using low R DS(ON) MOSFETs. Since many high voltage MOSFETs have higher threshold voltages (typical VTH ≥ 5V) and RDS(ON) is directly related to the (V GS–VTH) of the MOSFET , the LTC7004 maximum gate drive of greater than 10V makes it an ideal solution to minimize external conduction losses associated with external high voltage MOSFETs. SOA is specified in Typical Characteristic curves in power N-channel MOSFET data sheets. The SOA curves show the relationship between the voltages and current allowed in a timed operation of a power MOSFET without causing damage to the MOSFET . Limiting Inrush Current During Turn-On Large capacitive loads such as complex electrical systems with large bypass capacitors should be driven using the circuit shown in Figure 5. The pull-up gate drive to the power MOSFET from TGUP is passed through an RC delay network, R G and C G, which greatly reduces the turn-on ramp rate of the MOSFET . Since the MOSFET source volt- age follows the gate voltage, the load is powered smoothly from ground. This dramatically reduces the inrush current from the source supply and reduces the transient ramp rate of the load, allowing for slower activation of sensitive electrical loads. The turn-off of the MOSFET is not affected by the R C delay network as the pull-down for the MOSFET gate is directly from the TGDN pin. Note that the voltage rating on capacitor C G needs to be the same or higher than the external MOSFET and CLOAD.

Figure 4. VCCUV Resistor Selection

7004 F04

Figure 6. Optional Schottky Diode Usage the TS pin of the LTC7004. See Figure 6. Figure 5. Powering Large Capacitive Loads

7004 F06

7004 F05

Figure 7. Protecting Load from Voltage Drops on VIN

7004 F07

• FDS3890, Fairchild/ON Semiconductor
• IRF7380PbF , Infineon/IR
• SQJB80EP , Vishay/Siliconix PC Board Layout Considerations 1. Solder the exposed pad on the backside of the LTC7004 package directly to the ground plane of the board. 2. Limit the resistance of the TS trace, by making it short and wide. CB needs to be close to chip. 4. Always include an option in the PC board layout to place a resistor in series with the gate of any external MOSFET . High frequency oscillations are design dependent, and having the option to add a series dampening resistor can save a design iteration of the PC board. APPLICATIONS INFORMATION

7004fa For more information www.linear.com/LTC7004 TYPICAL APPLICATIONS High Side Switch with Inrush Control and OVLO 4.7µF 0.47µF 220k LOAD 15mF 0V TO 24V 47µF +1µF TGUP TGDN BST TS OVLO INP VCC VCCUV

7004 TA02

(60V TOLERANT) VCC 7V TO 15V ON OFF GND 221k 10/uni03A9 12.1k

7004faFor more information www.linear.com/LTC7004 High Side Switch with VCCUV and OVLO 0.1µF LOAD 0V TO 48V TGUP TGDN BST TS OVLO INP VCCUV VCC

7004 TA03

(60V TOLERANT) VCC 5V TO 15V ON OFF GND 12.1k 464k 71.5k TYPICAL APPLICATIONS

7004fa For more information www.linear.com/LTC7004 PACKAGE DESCRIPTION Please refer to http://www.linear .com/product/LTC7004#packaging for the most recent package drawings. MSOP (MSE) 0213 REV I 0.53 ±0.152 (.021 ±.006) SEATING PLANE 0.18 (.007) 1.10 (.043) MAX 0.17 –/uni00A00.27 (.007 – .011) TYP 0.86 (.034) REF 0.50 (.0197) BSC 1 2 3 4 5 4.90 ±0.152 (.193 ±.006) 0.497 ±0.076 (.0196 ±.003) REF8 9 10 7 6 3.00 ±0.102 (.118 ±.004) (NOTE 3) 3.00 ±0.102 (.118 ±.004) (NOTE 4) NOTE: 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD SHALL NOT EXCEED 0.254mm (.010") PER SIDE. 0.254 (.010) 0° – 6° TYP DETAIL “A” DETAIL “A” GAUGE PLANE 5.10 (.201) MIN 3.20 – 3.45 (.126 – .136) 0.889 ±0.127 (.035 ±.005) RECOMMENDED SOLDER PAD LAYOUT 1.68 ±0.102 (.066 ±.004) 1.88 ±0.102 (.074 ±.004) 0.50 (.0197) BSC 0.305 ± 0.038 (.0120 ±.0015) TYP BOTTOM VIEW OF EXPOSED PAD OPTION 1.68 (.066) 1.88 (.074) 0.1016 ±0.0508 (.004 ±.002) DETAIL “B” DETAIL “B” CORNER TAIL IS PART OF THE LEADFRAME FEATURE. FOR REFERENCE ONL Y NO MEASUREMENT PURPOSE

0.05 REF

0.29 REF 10-Lead Plastic MSOP, Exposed Die Pad (Reference LTC DWG # 05-08-1664 Rev I)

7004faFor more information www.linear.com/LTC7004 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER A 10/17 Top Mark Correction 2

7004fa For more information www.linear.com/LTC7004 LT 1017 REV A • PRINTED IN USA www.linear.com/LTC7004  LINEAR TECHNOLOGY CORPORATION 2017 RELATED PARTS TYPICAL APPLICATION PART NUMBER DESCRIPTION COMMENTS LTC7000/ LTC7000-1 Fast 150V Protected High Side NMOS Static Switch Driver 3.5V to 150V Operation, Short-Circuit Protected, ΔV SNS = 30mV, IQ = 35µA, Turn-On (CL = 1nF) = 35ns, Internal Charge Pump LTC7001 Fast 150V High Side NMOS Static Switch Driver 3.5V to 150V Operation, I Q = 27µA, Turn-On (CL = 1nF) = 35ns, Internal Charge Pump LTC7003 Fast 60V Protected High Side NMOS Static Switch Driver 3.5V to 60V Operation, Short-Circuit Protected, ΔVSNS = 30mV, IQ = 35µA, Turn-On (CL = 1nF) = 35ns, Internal Charge Pump LTC4440/ LTC4440-5/ LTC4440A-5 High Speed, High Voltage High Side Gate Driver Up to 100V Supply Voltage, 8V ≤ V CC ≤ 15V, 2.4A Peak Pull-Up/1.5Ω Peak Pull-Down LTC7138 High Efficiency, 150V 250mA/400mA Synchronous Step-Down Regulator Integrated Power MOSFETs, 4V ≤ V IN ≤ 150V, 0.8V ≤ VOUT ≤ VIN, IQ = 12µA, MSOP-16 (12) LTC7103 105V, 2.3A Low EMI Synchronous Step-Down Regulator 4.4V ≤ V IN ≤ 105V, 1V ≤ VOUT ≤ VIN, IQ = 2µA Fixed Frequency 200kHz to 2MHz, 5mm × 6mm QFN LTC7801 150V Low IQ, Synchronous Step-Down DC/DC Controller 4V ≤ VIN ≤ 140V, 150V Abs Max, 0.8V ≤ VOUT ≤ 60V, IQ = 40µA, PLL Fixed Frequency 320kHz to 2.25MHz LT1910 Protected High Side MOSFET Driver 8V to 48V Operation, ΔV SNS = 65mV, IQ = 110µA, Turn-On (CL = 1nF) = 220µs, Internal Charge Pump LTC4367 100V Overvoltage, Undervoltage and Reverse Supply Protection Controller Wide Operating Range: 2.5V to 60V, Protection Range: –40V to 100V, No TVS Required for Most Applications LTC4368 100V Overvoltage, Undervoltage and Reverse Supply Protection Controller with Bidirectional Circuit Breaker Wide Operating Range: 2.5V to 60V, Protection Range: –40V to 100V, No TVS Required for Most Applications LTC4364 Surge Stopper with Ideal Diode 4V to 80V Operation, ΔV SNS = 50mV, IQ = 425µA, Turn-On (CL = 1nF) = 500µs, Internal Charge Pump LTC7860 High Efficiency Switching Surge Stopper 4V to 60V Operation, ΔV SNS = 95mV, IQ = 370µA, PMOS Driver LTC4231 Micropower Hot Swap Controller 2.7V to 36V Operation, ΔV SNS = 50mV, IQ = 4µA, Turn-On (CL = 1nF) = 1ms, Internal Charge Pump LTC3895 150V Low IQ, Synchronous Step-Down DC/DC Controller PLL Fixed Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 140V, 0.8V ≤ VOUT ≤ 60V, IQ = 40µA LTC4380 Low Quiescent Current Surge Stopper 4V to 80V Operation, ΔV SNS = 50mV, IQ = 8µA, Turn-On = 5ms, Internal Charge Pump LTC3639 High Efficiency, 150V 100mA Synchronous Step-Down Regulator Integrated Power MOSFETs, 4V ≤ V IN ≤ 150V, 0.8V ≤ VOUT ≤ VIN, IQ = 12µA, MSOP-16(12) Motor Driver 86.6k VS-12CWQ06FN TGUP TGDN TS VCCUV VCC BST OVLO INP

7004 TA04

BAS116 0.1µF 48V GND 48V, 500W MOTORM