LT4356-3 AD | Alldatasheet
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Technical content
Rev DFor more information www.analog.com
APPLICATIONS
The LT®4356-3 surge stopper protects loads from high voltage transients. It regulates the output during an overvoltage event, such as load dump in automobiles, by controlling the gate of an external N-channel MOSFET. The output is limited to a safe value thereby allowing the loads to continue functioning. The LT4356-3 also monitors the voltage drop between the V CC and SNS pins to protect against overcurrent faults. An internal amplifier limits the current sense voltage to 50mV. In either fault condi- tion, a timer is started inversely proportional to MOSFET stress. If the timer expires, the F LT pin pulls low to warn of an impending power down. If the condition persists, the MOSFET is turned off, until the SHDN pin pulls low momentarily. The auxiliary amplifier may be used as a voltage detection comparator or as a linear regulator controller driving an external PNP pass transistor. Back-to-back FETs can be used in lieu of a Schottky diode for reverse input protection, reducing voltage drop and power loss. The SHDN input turns off the part, including the auxiliary amplifier, and reduces the quiescent current to less than 7µA. n Automotive/Avionic Surge Protection n Hot Swap/Live Insertion n High Side Switch for Battery Powered Systems n Stops High Voltage Surges n Adjustable Output Clamp Voltage n Overcurrent Protection n Wide Operation Range: 4V to 80V n Reverse Input Protection to –60V n Low 7µA Shutdown Current n Adjustable Latchoff Fault Timer n Controls N-channel MOSFET n Shutdown Pin Withstands –60V to 100V n Fault Output Indication n Auxiliary Amplifier for Level Detection Comparator or Linear Regulator Controller n Available in 12-Pin 4mm × 3mm DFN, 10-Pin MSOP , and 16-Pin SO Packages 4A, 12V Overvoltage Output Regulator Overvoltage Protector Regulates Output at 27V During T ransient 0.1µF 10/uni03A9 10m/uni03A9 IRLR2908VIN 12V
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4.99k 383k 100k 102k 100ms/DIV LT4356-3TA01b VIN 20V/DIV VOUT 20V/DIV 80V INPUT SURGE CTMR = 6.8µF ILOAD = 500mA 27V ADJUSTABLE CLAMP 12V 12V TYPICAL APPLICATION All registered trademarks and trademarks are the property of their respective owners.
Rev D For more information www.analog.com ORDER INFORMATION Operating Temperature Range IN+ AOUT GND EN FLT SHDN TMR FB OUT GATE SNS VCC TOP VIEW DE PACKAGE 12-LEAD (4mm × 3mm) PLASTIC DFN TJMAX = 125°C, θJA = 43°C/W EXPOSED PAD (PIN 13) PCB GND CONNECTION OPTIONAL FB OUT GATE SNS VCC TMR GND EN FLT SHDN TOP VIEW MS PACKAGE 10-LEAD PLASTIC MSOP TJMAX = 125°C, θJA = 160°C/W TOP VIEW S PACKAGE 16-LEAD PLASTIC SO TJMAX = 150°C, θJA = 100°C/W TMR FB NC OUT GATE NC SNS VCC IN+ NC AOUT NC GND EN FLT SHDN Storage Temperature Range Lead Temperature (Soldering, 10 sec) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Notes 1 and 2) LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LT4356CDE-3#PBF LT4356CDE-3#TRPBF 43563 12-Lead (4mm × 3mm) Plastic DFN 0°C to 70°C LT4356IDE-3#PBF LT4356IDE-3#TRPBF 43563 12-Lead (4mm × 3mm) Plastic DFN –40°C to 85°C LT4356HDE-3#PBF LT4356HDE-3#TRPBF 43563 12-Lead (4mm × 3mm) Plastic DFN –40°C to 125°C LT4356CMS-3#PBF LT4356CMS-3#TRPBF L TFFK 10-Lead Plastic MSOP 0°C to 70°C LT4356IMS-3#PBF LT4356IMS-3#TRPBF L TFFK 10-Lead Plastic MSOP –40°C to 85°C LT4356HMS-3#PBF LT4356HMS-3#TRPBF L TFFK 10-Lead Plastic MSOP –40°C to 125°C LT4356MPMS-3#PBF LT4356MPMS-3#TRPBF L TGGZ 10-Lead Plastic MSOP –55°C to 125°C LT4356CS-3#PBF LT4356CS-3#TRPBF LT4356S-3 16-Lead Plastic SO 0°C to 70°C LT4356IS-3#PBF LT4356IS-3#TRPBF LT4356S-3 16-Lead Plastic SO –40°C to 85°C LT4356HS-3#PBF LT4356HS-3#TRPBF LT4356S-3 16-Lead Plastic SO –40°C to 125°C LT4356MPS-3#PBF LT4356MPS-3#TRPBF LT4356MPS-3 16-Lead Plastic SO –55°C to 125°C
Rev DFor more information www.analog.com The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V unless otherwise noted.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VCC Operating Voltage Range l 4 80 V ICC VCC Supply Current VSHDN = Float l 1 1.5 mA VSHDN = 0V, IN+ = 1.3V LT4356C, LT4356I LT4356H, LT4356MP l l µA µA µA IR Reverse Input Current VSNS = VCC = –30V, SHDN Open VSNS = VCC = VSHDN = –30V l l 0.3 0.8 mA mA ΔVGATE GATE Pin Output High Voltage VCC = 4V; (VGATE – VOUT) 80V ≥ VCC ≥ 8V; (VGATE – VOUT) l l 4.5 V V IGATE(UP) GATE Pin Pull-Up Current VGATE = 12V; VCC = 12V; LT4356C, LT4356I, LT4356H VGATE = 12V; VCC = 12V; LT4356MP VGATE = 48V; VCC = 48V l l l –4.5 –23 –23 –30 –36 –38 –50 µA µA µA IGATE(DN) GATE Pin Pull-Down Current Overvoltage, VFB = 1.4V, VGATE = 12V Overcurrent, VCC – VSNS = 120mV, VGATE = 12V Shutdown Mode, VSHDN = 0V, VGATE = 12V l l l 1.5 150 mA mA mA VFB FB Pin Servo Voltage VGATE = 12V, VOUT = 12V; LT4356C, LT4356I VGATE = 12V, VOUT = 12V; LT4356H, LT4356MP l l 1.225 1.215 1.25 1.25 1.275 1.275 V V IFB FB Pin Input Current VFB = 1.25V l 0.3 1 µA ΔVSNS Overcurrent Fault Threshold ΔVSNS = (VCC – VSNS), VCC = 12V; LT4356C, LT4356I ΔVSNS = (VCC – VSNS), VCC = 12V; LT4356H ΔVSNS = (VCC – VSNS), VCC = 12V; LT4356MP ΔVSNS = (VCC – VSNS), VCC = 48V; LT4356C, LT4356I ΔVSNS = (VCC – VSNS), VCC = 48V; LT4356H ΔVSNS = (VCC – VSNS), VCC = 48V; LT4356MP l l l l l l 42.5 42.5 mV mV mV mV mV mV ISNS SNS Pin Input Current VSNS = VCC = 12V to 48V l 5 10 22 µA ILEAK F LT, EN Pins Leakage Current AOUT Pin Leakage Current F LT, EN = 80V AOUT = 80V l 2.5 4.5 µA µA ITMR TMR Pin Pull-up Current VTMR = 1V, VFB = 1.5V, (VCC – VOUT) = 0.5V VTMR = 1V, VFB = 1.5V, (VCC – VOUT) = 75V VTMR = 1.3V, VFB = 1.5V, (VCC – VOUT) = 75V VTMR = 1V, ΔVSNS = 60mV, (VCC – VOUT) = 0.5V VTMR = 1V, ΔVSNS = 60mV, (VCC – VOUT) = 80V l l l l l –1.5 –44 –3.5 –2.5 –195 –2.5 –50 –5.5 –4.5 –260 –56 –8.5 –6.5 –325 µA µA µA µA µA TMR Pin Pull-down Current VTMR = 1V, VFB = 1V, ΔVSNS = 0V l 1.5 2.2 2.7 µA VTMR TMR Pin Thresholds FL T From High to Low, VCC = 5V to 80V l 1.22 1.25 1.28 V ΔVTMR Early Warning Period From F LT going Low to GATE Going Low, VCC = 5V to 80V l 80 100 120 mV VIN+ IN+ Pin Threshold l 1.22 1.25 1.28 V IIN+ IN+ Pin Input Current VIN+ = 1.25V l 0.3 1 µA VOL F LT, EN, AOUT Pins Output Low ISINK = 2mA ISINK = 0.1mA l l 300 800 V mV IOUT OUT Pin Input Current VOUT = VCC = 12V; LT4356C, LT4356I, LT4356H VOUT = VCC = 12V; LT4356MP VOUT = VCC = 12V, VSHDN = 0V l l l 200 200 300 310 µA µA mA ΔVOUT OUT Pin High Threshold ΔVOUT = VCC – VOUT; EN From Low to High l 0.25 0.5 0.7 V
Rev D For more information www.analog.com The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V unless otherwise noted. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to GND unless otherwise specified. Note 3: An internal clamp limits the GATE pin to a minimum of 10V above the OUT pin. Driving this pin to voltages beyond the clamp may damage the device. Note 4: Resting voltage after turn-on. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VSHDN SHDN Pin Threshold VCC = 12V to 48V l 0.6 0.4 1.7 2.1 V V VSHDN(F LT) SHDN Pin Resting Voltage VCC = 12V to 48V, Note 4 l 0.6 2.1 V ISHDN SHDN Pin Current VSHDN = 0V l –1 –4 –8 µA tOFF(OC) Overcurrent Turn Off Delay Time GATE From High to Low, ΔVSNS = 0 → 120mV; LT4356C, LT4356I, LT4356H LT4356MP l l 4.5 µs µs tOFF(OV) Overvoltage Turn Off Delay Time GATE From High to Low, VFB = 0 → 1.5V l 0.25 1 µs TYPICAL PERFORMANCE CHARACTERISTICS ICC (Shutdown) vs VCC ICC vs VCC ICC (Shutdown) vs Temperature VCC (V) ICC (µA) 20 40 60 80
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VCC (V) ICC (µA) 200 400 600 20 40 60 80
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TEMPERATURE (°C) –50 ICC (µA) 0 50 100 125
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–25 25 75 Specifications are at VCC = 12V, TA = 25°C unless otherwise noted.
Rev DFor more information www.analog.com SHDN Current vs Temperature GATE Pull-Up Current vs VCC GATE Pull-Up Current vs Temperature GATE Pull-Down Current vs Temperature GATE Pull-Down Current vs Temperature ΔVGATE vs IGATE TEMPERATURE (°C) –50 ISHDN (µA) 0 50 100 125
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–25 25 75 VSHDN = 0V VCC (V) IGATE (µA) 20 40 60 80
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TEMPERATURE (°C) –50 IGATE (µA) 0 50 100 125
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–25 25 75 VGATE = VOUT = 12V TEMPERATURE (°C) –50
100 IGATE(DOWN) (mA)
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–25 25 75 OVERVOLTAGE CONDITION VFB = 1.5V TEMPERATURE (°C) –50 IGATE(DOWN) (mA) 0 50 100 125
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–25 25 75 OVERCURRENT CONDITION ∆VSNS = 120mV IGATE (µA) ∆VGATE (V) 4 8 12 16
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VOUT = 12V TYPICAL PERFORMANCE CHARACTERISTICS Specifications are at VCC = 12V, TA = 25°C unless otherwise noted. ΔVGATE vs Temperature ΔVGATE vs VCC Overvoltage TMR Current vs (VCC – VOUT) TEMPERATURE (°C) –50 0 50 100 125–25 25 75 ∆VGATE (V)
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14 IGATE = –1µA
VCC = 8V VCC = 4V VCC (V) 0 20 40 60 80
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∆VGATE (V) IGATE = –1µA VOUT = VCC TA = –45°C TA = 25°C TA = 130°C VCC – VOUT (V) ITMR (µA) 20 40 60 80
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VOUT = 5V VTMR = 1V
Rev D For more information www.analog.com Output Low Voltage vs Current Overvoltage Turn-Off Time vs Temperature Overcurrent Turn-Off Time vs Temperature CURRENT (mA) VOL (V) 1.0 2.0 3.0 0.5 1.5 2.5 3.5 2.0 3.0
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4.0 1.00.5 2.51.5 AOUT EN FLT TEMPERATURE (°C) –50 100 tOFF (ns) 0 50 100 125
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–25 25 75 OVERVOLTAGE CONDITION VFB = 1.5V TEMPERATURE (°C) –50 1.0 1.5 tOFF (µs) 0 50 100 125
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4.0 3.5 3.0 2.5 2.0 –25 25 75 OVERCURRENT CONDITION ∆VSNS = 120mV VCC (V) ICC (mA)–10 –15 –80
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–20 –40 –60 –20 VCC = SNS Reverse Current vs Reverse Voltage Overcurrent TMR Current vs (VCC – VOUT) Warning Period TMR Current vs VCC TMR Pull-Down Current vs Temperature VCC – VOUT (V) ITMR (µA) 120 160 20 40 60 80
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VOUT = 0V VTMR = 1V VCC (V) 0 20 40 60 80
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ITMR (µA)
14 OVERVOLTAGE, EARLY
VFB = 1.5V VTMR = 1.3V TEMPERATURE (°C) –50 ITMR (µA) 0 50 100 125
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3.0 2.5 2.0 1.5 1.0 0.5 –25 25 75 VTMR = 1V TYPICAL PERFORMANCE CHARACTERISTICS Specifications are at VCC = 12V, TA = 25°C unless otherwise noted.
Rev DFor more information www.analog.com PIN FUNCTIONS AOUT (DFN and SO Packages Only): Amplifier Output. Open collector output of the auxiliary amplifier. It is capable of sinking up to 2mA from 80V. The negative input of the amplifier is internally connected to a 1.25V reference. EN: Open-Collector Enable Output. The EN pin goes high impedance when the voltage at the OUT pin is above (VCC – 0.7V), indicating the external MOSFET is fully on. The state of the pin is latched until the OUT pin voltage resets at below 0.5V and goes back up above 2V. The internal NPN is capable of sinking up to 3mA of current from 80V to drive an LED or opto-coupler. Exposed Pad: Exposed pad may be left open or connected to device ground (GND). FB: Voltage Regulator Feedback Input. Connect this pin to the center tap of the output resistive divider connected between the OUT pin and ground. During an overvoltage condition, the GATE pin is servoed to maintain a 1.25V threshold at the FB pin. This pin is clamped internally to 7V. Tie to GND to disable the OV clamp. FLT: Open-Collector Fault Output. This pin pulls low after the voltage at the TMR pin has reached the fault threshold of 1.25V. It indicates the pass transistor is about to turn off because either the supply voltage has stayed at an elevated level for an extended period of time (voltage fault) or the device is in an overcurrent condition (current fault). The internal NPN is capable of sinking up to 3mA of current from 80V to drive an LED or opto-coupler. GATE: N-Channel MOSFET Gate Drive Output. The GATE pin is pulled up by an internal charge pump current source and clamped to 14V above the OUT pin. Both voltage and current amplifiers control the GATE pin to regulate the output voltage and limit the current through the MOSFET. GND: Device Ground. IN+ (DFN and SO Packages Only): Positive Input of the Auxiliary Amplifier. This amplifier can be used as a level detection comparator with external hysteresis or linear regulator controlling an external PNP transistor. This pin is clamped internally to 7V. Connect to ground if unused. OUT: Output Voltage Sense Input. This pin senses the voltage at the source of the N-channel MOSFET and sets the fault timer current. When the OUT pin voltage reaches 0.7V away from VCC, the EN pin goes high impedance. SHDN: Shutdown Control Input. Pulling the SHDN pin low shuts the LTC4356-3 down to a low current mode. All functions, including the GATE and the spare amplifier are turned off. The SHDN input threshold is similar to a TTL input. If the SHDN voltage goes below 2.1V, the voltage must go below 0.4V for 100µs to properly shut down the part. To turn the part back on, the SHDN voltage must transition from below 0.4V to greater than 2.1V with a slew rate faster than 10V/ms. An internal 7µA current source is provided to pull the SHDN pin up. An external pull-up device should be used if the leakage current to ground might exceed 1µA. After a fault time-out which turns the GATE off, the GATE can be restarted by shutting down and restarting the part. The SHDN pin can be pulled up to 100V or below GND by 60V without damage. SNS: Current Sense Input. Connect this pin to the output of the current sense resistor. The current limit circuit controls the GATE pin to limit the sense voltage between VCC and SNS pins to 50mV. At the same time the sense amplifier also starts a current source to charge up the TMR pin. This pin can be pulled below GND by up to 60V, though the voltage difference with the VCC pin must be limited to less than 30V. Connect to VCC if unused. TMR: Fault Timer Input. Connect a capacitor between this pin and ground to set the times for early warning and fault periods. The current charging up this pin during fault conditions depends on the voltage difference between the VCC and OUT pins. When VTMR reaches 1.25V, the F LT pin pulls low to indicate the detection of a fault condition. If the condition persists, the pass transistor turns off when VTMR reaches the threshold of 1.35V. The GATE pin remains low even after the fault condition has disappeared and the voltage at the TMR pin has reached 0.5V. A minimum of 10nF capacitor is needed to compensate the loop. A 10V rated X7R capacitor is recommended for CTMR. VCC: Positive Supply Voltage Input. The positive supply input ranges from 4V to 80V for normal operation. It can also be pulled below ground potential by up to 60V during a reverse battery condition, without damaging the part. The supply current is reduced to 7µA with all the functional blocks off.
Rev D For more information www.analog.com BLOCK DIAGRAM + – VCC VCC SHDN IN+ AUXILIARY AMPLIFIER IA 1.25V 50mV 2µA 1.35V 1.25V – 1.25V 0.5V SNS TMR GND GATE 14V AOUT OUT 43563 BD VCC ITMR FLT EN FB+ CHARGE PUMP ƒ = 250kHz 7µA 20µA CONTROL LOGIC GATEOFF FLT OUT OVOC VA SHDN
Rev DFor more information www.analog.com Some power systems must cope with high voltage surges of short duration such as those in automobiles. Load circuitry must be protected from these transients, yet high availability systems must continue operating during these events. The LT4356-3 is an overvoltage protection regulator that drives an external N-channel MOSFET as the pass transis- tor. It operates from a wide supply voltage range of 4V to 80V. It can also be pulled below ground potential by up to 60V without damage. The low power supply require - ment of 4V allows it to operate even during cold cranking conditions in automotive applications. The internal charge pump turns on the N-channel MOSFET to supply current to the loads with very little power loss. T wo MOSFETs can be connected back to back to replace an inline Schottky diode for reverse input protection. This improves the ef- ficiency and increases the available supply voltage level to the load circuitry during cold crank. Normally, the pass transistor is fully on, powering the loads with very little voltage drop. When the supply volt- age surges too high, the voltage amplifier (VA ) controls the gate of the MOSFET and regulates the voltage at the source pin to a level that is set by the external resistive divider from the OUT pin to ground and the internal 1.25V reference. A current source starts charging up the capaci- tor connected at the TMR pin to ground. If the voltage at the TMR pin, VTMR, reaches 1.25V, the F LT pin pulls low to indicate impending turn-off due to the overvoltage condition. The pass transistor stays on until the TMR pin reaches 1.35V, at which point the GATE pin pulls low turning off the MOSFET. The GATE pin stays latched off until it is cleared by one of two ways. First, power down the part for more than 100µs before powering it back up, or second, pull the SHDN below 0.4V for more than 100µs then pull SHDN high with a slew rate higher than 10V/ms. The potential at the TMR pin starts decreasing as soon as the output voltage is not being servoed, indicating the overvoltage condition has disappeared, but the GATE pin remains low even when the voltage at the TMR pin reaches 0.5V. The fault timer allows the load to continue functioning during short transient events while protecting the MOSFET from being damaged by a long period of supply overvolt- age, such as a load dump in automobiles. The timer period varies with the voltage across the MOSFET. A higher voltage corresponds to a shorter fault timer period, ensuring the MOSFET operates within its safe operating area (SOA). The LT4356-3 senses an overcurrent condition by monitor- ing the voltage across an optional sense resistor placed between the V CC and SNS pins. An active current limit circuit (IA) controls the GATE pin to limit the sense volt- age to 50mV. A current is also generated to start charging up the TMR pin. This current is about 5 times the current generated during an overvoltage event. The FL T pin pulls low when the voltage at the TMR pin reaches 1.25V and the MOSFET is turned off when it reaches 1.35V. An auxiliary amplifier is provided with the negative input connected to an internal 1.25V reference. The output pull down device is capable of sinking up to 2mA of current allowing it to drive an LED or opto coupler. This amplifier can be configured as a linear regulator controller driving an external PNP transistor or a comparator function to monitor voltages. The SHDN pin turns off the pass transistor and reduces the supply current to less than 7µA. OPERATION
Rev D For more information www.analog.com The LT4356-3 can limit the voltage and current to the load circuitry during supply transients or overcurrent events. The total fault timer period should be set to ride through short overvoltage transients while not causing damage to the pass transistor. The selection of this N-channel MOSFET pass transistor is critical for this application. It must stay on and provide a low impedance path from the input supply to the load during normal operation and then dissipate power during overvoltage or overcurrent conditions. The following sections describe the overcurrent and the overvoltage faults, and the selection of the timer capacitor value based on the required warning time. The selection of the N-channel MOSFET pass transistor is discussed next. Auxiliary amplifier, reverse input, and the shutdown functions are covered after the MOSFET selection. External component selection is discussed in detail in the Design Example section. Overvoltage Fault The LT4356-3 limits the voltage at the OUT pin during an overvoltage situation. An internal voltage amplifier regu- lates the GATE pin voltage to maintain a 1.25V threshold at the FB pin. During this period of time, the power MOSFET is still on and continues to supply current to the load. This allows uninterrupted operation during short overvoltage transient events. When the voltage regulation loop is engaged for longer than the time-out period, set by the timer capacitor con- nected from the TMR pin to ground, an overvoltage fault is detected. The GATE pin is pulled down to the OUT pin by a 150mA current. This prevents the power MOSFET from being damaged during a long period of overvoltage, such as during load dump in automobiles. Pulling the SHDN pin low for at least 100µs and pulled high with a slew rate faster than 10V/ms will allow the GATE pin to pull back up. Overcurrent Fault The LT4356-3 features an adjustable current limit that protects against short circuits or excessive load current. During an overcurrent event, the GATE pin is regulated to limit the current sense voltage across the V CC and SNS pins to 50mV. An overcurrent fault occurs when the current limit circuitry has been engaged for longer than the time-out delay set by the timer capacitor. The GATE pin is then immediately pulled low by a 10mA current to GND turning off the MOSFET. The GATE pin stays low until the SHDN pin is pulled low for at least 100µs and pulled high with a slew rate faster than 10V/ms. Fault Timer The LT4356-3 includes an adjustable fault timer pin. Con- necting a capacitor from the TMR pin to ground sets the delay timer period before the MOSFET is turned off. The same capacitor also sets the cool down period before the MOSFET is allowed to turn back on after the fault condition has disappeared. Once a fault condition, either overvoltage or overcurrent, is detected, a current source charges up the TMR pin. The current level varies depending on the voltage drop across the drain and source terminals of the power MOSFET(VDS), which is typically from the V CC pin to the OUT pin. This scheme takes better advantage of the available Safe Oper- ating Area (SOA) of the MOSFET than would a fixed timer current. The timer function operates down to V CC = 5V across the whole temperature range. APPLICATIONS INFORMATION
VDS in both overvoltage and overcurrent events. Figure 1. Overvoltage Fault Timer Current Figure 2. Overcurrent Fault Timer Current
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0.50 TIME
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selection of the fault timer capacitor. pulls low due to a fault time out, the LT4356-3 latches off. a slew rate of at least 10V/ms. V(BR)DSS, the threshold voltage, and the SOA. voltage will appear across the MOSFET. drive can be as low as 4.5V. Figure 3. Prototypical T ransient Waveform
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type, and rises to infinity under DC operating conditions. P2t is not the same for all combinations of I D and V DS. absorbing energy above a certain voltage. waveform is calculated as follows (Figure 4).
2 ILOAD
by integrating the square of MOSFET power versus time.
- CL
Figure 4. Safe Operating Area Required to Survive Prototypical
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Figure 6. Auxiliary LDO Output with Optional Current Limit
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is needed to prevent turn-on of the N-channel MOSFET. cathode connected to C1 as shown in Figure 5. Figure 7. Overvoltage Regulator with N-channel MOSFET
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functions are turned off including the auxiliary amplifier. 100µs, then pull high with a slew rate of at least 10V/ms. if no pull up device is used to help turn it on. at the input will clamp the voltage spikes. Figure 8. Overvoltage Regulator with P-Channel MOSFET
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Figure 9. Overvoltage Regulator with Low-Battery Detection
Rev D For more information www.analog.com Layout Considerations To achieve accurate current sensing, Kelvin connection to the current sense resistor (RSNS in Figure 9) is recom- mended. The minimum trace width for 1oz copper foil is 0.02" per amp to ensure the trace stays at a reasonable temperature. 0.03" per amp or wider is recommended. Note that 1oz copper exhibits a sheet resistance of about 530µΩ/square. Small resistances can cause large errors in high current applications. Noise immunity will be improved significantly by locating resistive dividers close to the pins with short VCC and GND traces. Design Example As a design example, take an application with the follow- ing specifications: VCC = 8V to 14V DC with transient up to 80V, VOUT ≤ 16V, current limit (ILIM) at 5A, low battery detection at 6V, and 1ms of overvoltage early warning (Figure 9). First, calculate the resistive divider value to limit VOUT to 16V during an overvoltage event: VREG = 1.25V • R1 + R2( ) = 16V Set the current through R1 and R2 during the overvoltage condition to 250µA. R2 = 1.25V 250µA = 5kΩ Choose 4.99kΩ for R2. R1 = 16V – 1.25V( ) • R2 1.25V = 58.88kΩ The closest standard value for R1 is 59kΩ. Next calculate the sense resistor, RSNS, value: RSNS = 50mV ILIM = 50mV = 10mΩ CTMR is then chosen for 1ms of early warning time: CTMR = 1ms • 5µA 100mV = 50nF The closest standard value for CTMR is 47nF. Finally, calculate R4 and R5 for the 6V low battery thresh- old detection: Choose 100kΩ for R5. 1.25V = 380kΩ Select 383kΩ for R4. The pass transistor, Q1, should be chosen to withstand the output short condition with VCC = 14V. The total overcurrent fault time is: tOC = 47nF • 0.85V 45.5µA = 0.878ms The power dissipation on Q1 equals to: P = 14V • 50mV 10mΩ = 70W These conditions are well within the Safe Operating Area of IRLR2908. APPLICATIONS INFORMATION
Rev DFor more information www.analog.com TYPICAL APPLICATIONS 24V Overvoltage Regulator Withstands 150V at VIN CTMR 0.1µF IRF640VIN 24V VOUT CLAMPED AT 32V
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6 FB 2
D2* SMAT70A 4.99k 118k GATE 10/uni03A9 *DIODES INC. Wide Input Range 5V to 28V Hot Swap with Undervoltage Lockout CTMR 1µF 10/uni03A9 RSNS 0.02/uni03A9 SUD50N03-10 VIN
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49.9k 118k 100µF 47nF Overvoltage Regulator with Low Battery Detection and Output Keep Alive During Shutdown 10/uni03A9 RSNS 10m/uni03A9VIN 12V VOUT 12V, 4A CLAMPED AT 16V
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THRESHOLD = 6V FLT FB AOUT LBO11 1N4746A 18V 24.9k 47k 402k 105k 294k 0.5W IRLR2908 VN2222 CTMR 0.1µF D2* SMAJ58A *DIODES INC.
Rev D For more information www.analog.com TYPICAL APPLICATIONS 2.5A, 48V Hot Swap with Overvoltage Output Regulation at 72V and UV Shutdown at 35V 1N4714 BV = 33V 6.8nF CTMR 0.1µF 10/uni03A9 RSNS 15m/uni03A9 VOUT 48V 2.5A
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300µF 4.02k 140k 100k 47k 4.02k 226k FDB3632 D2* SMAT70A VIN 48V *DIODES INC. 2.5A, 28V Hot Swap with Overvoltage Output Regulation at 36V and UV Shutdown at 15V 1N4700 BV = 13V 6.8nF CTMR 0.1µF 10/uni03A9 RSNS 15m/uni03A9 VOUT 28V 2.5A
43563 TA06
300µF 4.02k 113k 27k 47k 4.02k 110k FDB3632 D2* SMAT70A *DIODES INC. VIN 28V
Rev DFor more information www.analog.com TYPICAL APPLICATIONS Overvoltage Regulator with Reverse Input Protection Up to –80V 250mA High Voltage Low Dropout Linear Regulator CTMR 0.1µF RSNS 10m/uni03A9 IRLR2908 IRLR2908VIN 12V VOUT 12V, 3A CLAMPED AT 16V
43563 TA07
D2* SMAJ58CA 4.99k 59kGATE 10k 2N3904 1N4148 D3 1N4148 OPTIONAL COMPONENT FOR REDUCED STANDBY CURRENT 10/uni03A9 10/uni03A9 *DIODES INC. PSMNAR8 –100BSEVIN 20V VOUT 16V/250mA RSNS 0.2/uni03A9
43563 TA08
4.99k 7.5k 59k 100µF GATE 10/uni03A9 *THE OUTPUT LOAD STEP RESPONSE IS SLOW DUE TO THE RESPONSE TIME OF THE INTERNAL CHARGE PUMP
Rev D For more information www.analog.com 4.00 ±0.10 (2 SIDES) 3.00 ±0.10 (2 SIDES) NOTE: 1. DRAWING PROPOSED TO BE A VARIATION OF VERSION (WGED) IN JEDEC PACKAGE OUTLINE M0-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.40 ±0.10 BOTTOM VIEW—EXPOSED PAD 1.70 ±0.10 0.75 ±0.05 R = 0.115 TYP R = 0.05 TYP
2.50 REF
R = 0.20 OR 0.35 × 45° CHAMFER PIN 1 TOP MARK (NOTE 6)
0.200 REF
0.00 – 0.05 (UE12/DE12) DFN 0806 REV D RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 2.20 ±0.05 0.70 ±0.05 3.60 ±0.05 PACKAGE OUTLINE 3.30 ±0.10 0.25 ±0.05
0.50 BSC
1.70 ±0.05 3.30 ±0.05 0.25 ±0.05 DE/UE Package 12-Lead Plastic DFN (4mm × 3mm) (Reference LTC DWG # 05-08-1695 Rev D) PACKAGE DESCRIPTION
Rev DFor more information www.analog.com PACKAGE DESCRIPTION MSOP (MS) 0213 REV F 0.53 ±0.152 (.021 ±.006) SEATING PLANE 0.18 (.007) 1.10 (.043) MAX 0.17 –/uni00A00.27 (.007 – .011) TYP 0.86 (.034) REF 0.50 (.0197) BSC 1 2 3 4 5 4.90 ±0.152 (.193 ±.006) 0.497 ±0.076 (.0196 ±.003) REF8910 7 6 3.00 ±0.102 (.118 ±.004) (NOTE 3) 3.00 ±0.102 (.118 ±.004) (NOTE 4) NOTE: 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 0.254 (.010) 0° – 6° TYP DETAIL “A” DETAIL “A” GAUGE PLANE 5.10 (.201) MIN 3.20 – 3.45 (.126 – .136) 0.889 ±0.127 (.035 ±.005) RECOMMENDED SOLDER PAD LAYOUT 0.305 ±0.038 (.0120 ±.0015) TYP 0.50 (.0197) BSC 0.1016 ±0.0508 (.004 ±.002) 10-Lead Plastic MSOP (Reference LTC DWG # 05-08-1661 Rev F)
Rev D For more information www.analog.com .016 – .050 (0.406 – 1.270) .010 – .020 0° – 8° TYP .008 – .010 (0.203 – 0.254) N 2 3 4 5 6 7 8 N/2 .150 – .157 (3.810 – 3.988) NOTE 3 16 15 14 13 .386 – .394 (9.804 – 10.008) NOTE 3 .228 – .244 (5.791 – 6.197) 12 11 10 9 S16 REV G 0212 .053 – .069 (1.346 – 1.752) .014 – .019 (0.355 – 0.483) TYP .004 – .010 (0.101 – 0.254) .050 (1.270) BSC .245 MIN N 1 2 3 N/2 .160 ±.005 RECOMMENDED SOLDER PAD LAYOUT .045 ±.005 .050 BSC .030 ±.005 TYP INCHES (MILLIMETERS) NOTE: 1. DIMENSIONS IN 2. DRAWING NOT TO SCALE 3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) 4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE S Package 16-Lead Plastic Small Outline (Narrow .150 Inch) (Reference LTC DWG # 05-08-1610 Rev G) PACKAGE DESCRIPTION
Rev DFor more information www.analog.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
REVISION HISTORY
REV DATE DESCRIPTION PAGE NUMBER A 12/09 Revise Features and Description Update Absolute Maximum Ratings, Pin Configuration, Order Information and Electrical Characteristics to Include H-grade Revise Pin Functions Revise Block Diagram Minor Text Edits to Operation Section Text Added to Applications Information Update Typical Applications 2-4 12, 15 18, 19 B 8/12 Added MP-Grade 2, 3, 4 C 9/17 Updated TMR pin function with minimum recommended capacitance 7 D 4/19 Updated: SHDN Pin Function; Block Diagram; Operation section 7, 8, 9
Rev D For more information www.analog.com ANALOG DEVICES, INC. 2009-2019 www.analog.com TYPICAL APPLICATION PART NUMBER DESCRIPTION COMMENTS LTC1696 Overvoltage Protection Controller ThinSOT™ Package, 2.7V to 28V LTC1735 High Efficiency Synchronous Step-Down Switching Regulator Output Fault Protection, 16-Pin SSOP LTC1778 No RSENSE™ Wide Input Range Synchronous Step-Down Controller Up to 97% Efficiency, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ (0.9)(VIN), IOUT Up to 20A LTC2909 T riple/Dual Inputs UV/OV Negative Monitor Pin Selectable Input Polarity Allows Negative and OV Monitoring LTC2912/LTC2913 Single/Dual UV/OV Voltage Monitor Ads UV and OV T rip Values, ±1.5% Threshold Accuracy LTC2914 Quad UV/OV Monitor For Positive and Negative Supplies LTC3727/LTC3727-1 2-Phase, Dual, Synchronous Controller 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 14V LTC3827/LTC3827-1 Low IQ, Dual, Synchronous Controller 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V, 80µA Quiescent Current LTC3835/LTC3835-1 Low IQ, Synchronous Step-Down Controller Single Channel LTC3827/LTC3827-1 LT3845 Low IQ, Synchronous Step-Down Controller 4V ≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V, 120µA Quiescent Current LTC3850 Dual, 550kHz, 2-Phase Synchronous Step-Down Controller Dual 180° Phased Controllers, VIN 4V to 24V, 97% Duty Cycle, 4mm × 4mm QFN-28, SSOP-28 Packages LT4256-1/LT4256-2 Positive 48V Hot Swap Controller with Open-Circuit Detect Foldback Current Limiting, Open-Circuit and Overcurrent Fault Output, Up to 80V Supply LTC4260 Positive High Voltage Hot Swap Controller with ADC and I2C Wide Operating Range 8.5V to 80V LTC4352 Ideal MOSFET ORing Diode External N-channel MOSFETs Replace ORing Diodes, 0V to 18V LTC4354 Negative Voltage Diode-OR Controller Controls T wo N-channel MOSFETs, 1µs Turn-Off, 80V Operation LTC4355 Positive Voltage Diode-OR Controller Controls T wo N-channel MOSFETs, 0.5µs Turn-Off, 80V Operation LTC4380 Low Quiescent Current Surge Stopper 8µA IQ; 4V to 72V Operation; –60V Reverse Input Protection Overvoltage Regulator with Linear Regulator Up to 100mA CTMR 0.1µF 10/uni03A9 RSNS 10m/uni03A9 2N2905A VIN 12V VOUT 12V, 3A CLAMPED AT 16V 2.5V, 100mA
43563 TA09
10µF 4.99k 100k 59k 249k 249k 47nF IRLR2908 D2* SMAJ58A *DIODES INC. RELATED PARTS