LT3470

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Technical content

FeaTures

applicaTions

DescripTion

The L T®3470 is a micropower step-down DC/DC con- verter that integrates a 300mA power switch, catch diode and boost diode into low profile 3mm × 2mm DD and ThinSOT™ packages. The L T3470 combines Burst Mode and continuous operation to allow the use of tiny induc- tor and capacitors while providing a low ripple output to loads of up to 200mA. With its wide input range of 4V to 40V , the L T3470 can regulate a wide variety of power sources, from 2-cell Li -Ion batteries to unregulated wall transformers and lead-acid batteries. Quiescent current in regulation is just 26µA in a typical application while a zero current shutdown mode disconnects the load from the input source, simplifying power management in battery-powered systems. Fast current limiting and hysteretic control protects the L T3470 and external components against shorted outputs, even at 40V input. L, L T , L TC, L TM, Linear Technology, the Linear logo and Burst Mode are registered trademarks and ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. Efficiency and Power Loss vs Load Current n Low Quiescent Current: 26µA at 12VIN to 3.3VOUT n Integrated Boost and Catch Diodes n Input Range: 4V to 40V n Low Output Ripple: <10mV n < 1µA in Shutdown Mode n Output Voltage: 1.25V to 16V n 200mA Output Current n Hysteretic Mode Control Low Ripple Burst Mode® Operation at Light Loads – Continuous Operation at Higher Loads n Solution Size as Small as 50mm2 n Low Profile (0.75mm) 3mm × 2mm Thermally Enhanced 8-Lead DD and 1mm ThinSOT Packages n Automotive Battery Regulation n Power for Portable Products n Distributed Supply Regulation n Industrial Supplies n Wall T ransformer Regulation LOAD CURRENT (mA) EFFICIENCY (%) POWER LOSS (mW) 0.1 10 100

3470 TA02

0.1 VIN = 12V VIN BOOST L T3470 SWSHDN 0.22µF 22pF 22µF2.2µF

3470 TA01a

33µH BIAS FB GND OFF ON

V F B V Maximum Junction Temperature 0°C (Note 1) orDer inForMaTion Operating Temperature Range (Note 2) 40°C to 85°C 40°C to 125°C 40°C to 150°C 65°C to 150°C 00°C TOP VIEW DDB8 PACKAGE 8-LEAD (3mm × 2mm) PLASTIC DFN 1 FB BIAS BOOST SW SHDN NC VIN GND θJA = 180°C/W EXPOSED PAD (PIN 9) IS GROUND (MUST BE SOLDERED TO PCB) SHDN 1 NC 2 VIN 3 GND 4 8 FB

7 BIAS

6 BOOST

θJA = 140°C/W pin conFiguraTion LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE L T3470EDDB#PBF L T3470EDDB#TRPBF LBPN 8-Lead (3mm × 2mm) Plastic DFN –40°C to 85°C L T3470IDDB#PBF L T3470IDDB#TRPBF LBPP 8-Lead (3mm × 2mm) Plastic DFN –40°C to 125°C L T3470HDDB#PBF L T3470HDDB#TRPBF LCNR 8-Lead (3mm × 2mm) Plastic DFN –40°C to 150°C L T3470ETS8#PBF L T3470ETS8#TRPBF L TBDM 8-Lead Plastic TSOT-23 –40°C to 85°C L T3470ITS8#PBF L T3470ITS8#TRPBF L TBPW 8-Lead Plastic TSOT-23 –40°C to 125°C L T3470HTS8#PBF L T3470HTS8#TRPBF L TCNQ 8-Lead Plastic TSOT-23 –40°C to 150°C LEAD BASED FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE L T3470EDDB L T3470EDDB#TR LBPN 8-Lead (3mm × 2mm) Plastic DFN –40°C to 85°C L T3470IDDB L T3470IDDB#TR LBPP 8-Lead (3mm × 2mm) Plastic DFN –40°C to 125°C L T3470HDDB L T3470HDDB#TR LCNR 8-Lead (3mm × 2mm) Plastic DFN –40°C to 150°C L T3470ETS8 L T3470ETS8#TR L TBDM 8-Lead Plastic TSOT-23 –40°C to 85°C L T3470ITS8 L T3470ITS8#TR L TBPW 8-Lead Plastic TSOT-23 –40°C to 125°C L T3470HTS8 L T3470HTS8#TR L TCNQ 8-Lead Plastic TSOT-23 –40°C to 150°C Consult L TC Marketing for parts specified with wider operating temperature ranges. For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear .com/tapeandreel/

The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 10V , VSHDN = 10V , VBOOST = 15V , VBIAS = 3V unless otherwise specified. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The L T3470E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. The L T3470I specifications are guaranteed over the –40°C to 125°C temperature range. L T3470H specifications are guaranteed over –40°C to 150°C temperature range. Note 3: Bias current flows out of the FB pin. Note 4: This is the minimum voltage across the boost capacitor needed to guarantee full saturation of the switch. Note 5: This parameter is assured by design and correlation with statistical process controls.

elecTrical characTerisTics

PARAMETER CONDITIONS MIN TYP MAX UNITS Minimum Input Voltage ● 4 V Quiescent Current from VIN VSHDN = 0.2V VBIAS = 3V , Not Switching VBIAS = 0V , Not Switching 0.1 0.5 µA µA µA Quiescent Current from Bias V SHDN = 0.2V VBIAS = 3V , Not Switching VBIAS = 0V , Not Switching 0.1 0.1 0.5 1.5 µA µA µA FB Comparator T rip Voltage V FB Falling ● 1.228 1.250 1.265 V FB Pin Bias Current (Note 3) VFB = 1V , E- and I-Grade 150 nA nA H-Grade

• 35 225 nA FB Voltage Line Regulation 4V < VIN < 40V 0.0006 0.01 %/V Minimum Switch Off-Time (Note 5) 500 ns Switch Leakage Current 0.7 1.5 µA Switch VCESAT ISW = 100mA (TS8 Package) ISW = 100mA (DD8 Package) 215 215 300 mV mV Switch Top Current Limit V FB = 0V 250 325 435 mA Switch Bottom Current Limit VFB = 0V 225 mA Catch Schottky Drop ISH = 100mA (TS8 Package) ISH = 100mA (DD8 Package) 630 630 775 mV mV Catch Schottky Reverse Leakage V SW = 10V 0.2 2 µA Boost Schottky Drop ISH = 30mA 650 775 mV Boost Schottky Reverse Leakage VSW = 10V , VBIAS = 0V 0.2 2 µA Minimum Boost Voltage (Note 4) ● 1.7 2.2 V BOOST Pin Current ISW = 100mA 7 12 mA SHDN Pin Current VSHDN = 2.5V 1 5 µA SHDN Input Voltage High 2.5 V SHDN Input Voltage Low 0.2 V

Typical perForMance characTerisTics Efficiency, VOUT = 3.3V Efficiency, V OUT = 5V V FB vs Temperature Top and Bottom Switch Current Limits (V FB = 0V) vs Temperature VIN Quiescent Current vs Temperature BIAS Quiescent Current (Bias > 3V) vs Temperature SHDN Bias Current vs Temperature FB Bias Current (V FB = 1V) vs Temperature LOAD CURRENT (mA) EFFICIENCY (%) 0.1 10 100

3470 G01

L = TOKO D52LC 47µH TA = 25°C VIN = 7VVIN = 12V VIN = 36VVIN = 24V LOAD CURRENT (mA) EFFICIENCY (%) 0.1 10 100

3470 G02

L = TOKO D52LC 47µH TA = 25°C VIN = 12V VIN = 36VVIN = 24V TEMPERATURE (°C) –50

1.240 VFB (V)

1.245 1.250 1.255 1.260 –25 0 25 50

3470 G03

TEMPERATURE (°C) –50 CURRENT LIMIT (mA) 350

3470 G04

–25 0 50 400 300 250 150 75 100 150 125 TEMPERATURE (°C) –50 –25 VIN CURRENT (µA)20 0 50 75

3470 G05

BIAS < 3V BIAS > 3V TEMPERATURE (°C) –50 BIAS CURRENT (µA) 25 75

3470 G06

–25 0 50 100 150 125 TEMPERATURE (°C) –50 SHDN CURRENT (µA)

3470 G07

0–25 75 10025 150 125

8 VSHDN = 36V

VSHDN = 2.5V TEMPERATURE (°C) –50 –25 FB CURRENT (nA)20 0 50 75

3470 G08

Typical perForMance characTerisTics FB Bias Current (VFB = 0V) vs Temperature Switch VCESAT (ISW = 100mA) vs Temperature Boost Diode VF (IF = 50mA) vs Temperature Catch Diode VF (IF = 100mA) vs Temperature Diode Leakage (VR = 36V) vs Temperature Switch VCESAT BOOST Pin Current Catch Diode Forward Voltage TEMPERATURE (°C) –50 FB CURRENT (µA) 100 120 25 75

3470 G09

–25 0 50 100 150 125 TEMPERATURE (°C) –50 SWITCH VCESAT (mV)200 250 300 25 75

3470 G10

–25 0 50 100 150 125 TEMPERATURE (°C) –50 SCHOTTKY VF (V) 0.7

3470 G11

0.4 0.2 –25 0 50 0.1 0.8 0.6 0.5 0.3 75 100 150 125 TEMPERATURE (°C) –50 0.4 0.5 0.7 25 75

3470 G12

0.3 0.2 –25 0 50 100 150 125 0.1 0.6 SCHOTTKY VF (V) TEMPERATURE (°C) –50 –25 SCHOTTKY DIODE LEAKAGE (µA) 0 50 75

3470 G13

SWITCH CURRENT (mA) 400 500 700 300

3470 G14

600SWITCH VCESAT (mV) SWITCH CURRENT (mA) 300

3470 G15

BOOST PIN CURRENT (mA) CATCH DIODE CURRENT (mA) SCHOTTKY VF (V) 0.4 0.6 400

3470 G16

0.2 100 200 300 1.0 0.8

SHDN (Pin 1/Pin 8): The SHDN pin is used to put the L T3470 in shutdown mode. Tie to ground to shut down the L T3470. Apply 2V or more for normal operation. If the shutdown feature is not used, tie this pin to the V IN pin. NC (Pin 2/Pin 7): This pin can be left floating or connected to V IN. VIN (Pin 3/Pin 6): The V IN pin supplies current to the L T3470’s internal regulator and to the internal power switch. This pin must be locally bypassed. GND (Pin 4/Pin 5): Tie the GND pin to a local ground plane below the L T3470 and the circuit components. Return the feedback divider to this pin. SW (Pin 5/Pin 4): The SW pin is the output of the internal power switch. Connect this pin to the inductor , catch diode and boost capacitor . BOOST (Pin 6/Pin 3): The BOOST pin is used to provide a drive voltage, which is higher than the input voltage, to the internal bipolar NPN power switch. BIAS (Pin 7/Pin 2): The BIAS pin connects to the internal boost Schottky diode and to the internal regulator . Tie to V OUT when VOUT > 2V or to VIN otherwise. When VBIAS > 3V the BIAS pin will supply current to the internal regulator . FB (Pin 8/Pin 1): The L T3470 regulates its feedback pin to 1.25V . Connect the feedback resistor divider tap to this pin. Set the output voltage according to V OUT = 1.25V (1 + R1/R2) or R1 = R2 (VOUT/1.25 – 1). Exposed Pad (DD, Pin 9): Ground. Must be soldered to PCB. Boost Diode Forward Voltage Minimum Input Voltage, V OUT = 3.3V Minimum Input Voltage, V OUT = 5V Typical perForMance characTerisTics BOOST DIODE CURRENT (mA) SCHOTTKY VF (V) 500 600 700 200

3470 G17

LOAD CURRENT (mA) 3.0 INPUT VOLTAGE (V) 3.5 4.0 4.5 5.0 5.5 6.0 50 100 150 200

3470 G18

TA = 25°C VIN TO START VIN TO RUN LOAD CURRENT (mA) INPUT VOLTAGE (V) 200

3470 G19

8 TA = 25°C

pin FuncTions (ThinSOT/DD)

R Q′ S Q 500ns ONE SHOT VREF 1.25V Burst Mode DETECT SW GND 3470 BD FB R2 R1 SHDN ENABLE VIN VIN NC BIAS BOOST VOUT gm

Figure 1. Operating Waveforms of the L T3470 Converting 12V to 5V Using a 33µH Inductor and 10µF Output Capacitor

3470 F01a

3470 F1b

section BOOST Pin Considerations. switch at too high a frequency to yield good efficiency. of the catch diode, and VOUT is the desired output voltage. inductor . See Table 1 for an inductor value selection guide. Table 1. Recommended Inductors for Loads up to 200mA Choose an inductor that is intended for power applications. Table 2 lists several manufacturers and inductor series.

Table 2. Inductor Vendors vendors for more information. capacitor satisfies these requirements. one with low ESR intended for use in switching regulators. LIM • ESR. ESR should be less than ~150mΩ. between the output and the feedback pin.

and a low cost electrolytic capacitor . the Hot-Plugging Safely section. 3.3V and above, the standard circuit (Figure 2a) is best. Figure 2. T wo Circuits for Generating the Boost Voltage Table 3. Capacitor Vendors

3470 F02

Figure 3. The Minimum Input Voltage Depends on Output Figure 4. Diode D1 Prevents a Shorted Input from Discharging a and BIAS pins are not exceeded. a higher input voltage to maintain regulation. protects against a shorted or reversed input.

3470 F04

ideally at the ground terminal of the output capacitor C2. Figure 5. A Good PCB Layout Ensures Proper , Low EMI Operation

3470 F05

The small size, robustness and low impedance of ceramic capacitors make them an attractive option for the input bypass capacitor of L T3470. However , these capacitors can cause problems if the L T3470 is plugged into a live supply (see Linear Technology Application Note 88 for a complete discussion). The low loss ceramic capacitor combined with stray inductance in series with the power source forms an under damped tank circuit, and the voltage at the V IN pin of the L T3470 can ring to twice the nominal input voltage, possibly exceeding the L T3470’s rating and damaging the part. If the input supply is poorly controlled or the user will be plugging the L T3470 into an energized supply, the input network should be designed to prevent this overshoot. Figure 6 shows the waveforms that result when an L T3470 circuit is connected to a 24V supply through six feet of 24-gauge twisted pair . The first plot is the response with a 2.2µF ceramic capacitor at the input. The input voltage rings as high as 35V and the input current peaks at 20A. One method of damping the tank circuit is to add another capacitor with a series resistor to the circuit. In Figure 6b an aluminum electrolytic capacitor has been added. This capacitor’s high equivalent series resistance damps the circuit and eliminates the voltage overshoot. The extra capacitor improves low frequency ripple filtering and can slightly improve the efficiency of the circuit, though it is likely to be the largest component in the circuit. An alterna- tive solution is shown in Figure 6c. A 1Ω resistor is added in series with the input to eliminate the voltage overshoot (it also reduces the peak input current). A 0.1µF capacitor improves high frequency filtering. This solution is smaller and less expensive than the electrolytic capacitor . For high input voltages its impact on efficiency is minor , reducing efficiency less than one half percent for a 5V output at full load operating from 24V . High Temperature Considerations The die junction temperature of the L T3470 must be lower than the maximum rating of 125°C (150°C for the H-grade). This is generally not a concern unless the ambi- ent temperature is above 85°C. For higher temperatures, care should be taken in the layout of the circuit to ensure good heat sinking of the L T3470. The maximum load current should be derated as the ambient temperature approaches the maximum junction rating. The die tem- perature is calculated by multiplying the L T3470 power dissipation by the thermal resistance from junction to ambient. Power dissipation within the L T3470 can be estimated by calculating the total power loss from an efficiency measurement. Thermal resistance depends on the layout of the circuit board and choice of package. The DD package with the exposed pad has a thermal resistance of approximately 80°C/W while the ThinSOT is approximately 150°C/W . Finally, be aware that at high ambient temperatures the internal Schottky diode will have significant leakage current (see Typical Performance Characteristics) increasing the quiescent current of the L T3470 converter .

Figure 6. A Well Chosen Input Network Prevents Input Voltage Overshoot and

3470 F06

3.3V Step-Down Converter 5V Step-Down Converter 2.5V Step-Down Converter VIN BOOST L T3470 SWSHDN 0.22µF , 6.3V 22pF 22µF

3470 TA03

1µF V IN 5.5V TO 40V VOUT 3.3V 200mA 324k 200k C1: TDK C3216JB1H105M C2: CE JMK316 BJ226ML-T L1: TOKO A993AS-270M=P3 33µH BIAS FB GND OFF ON VIN BOOST L T3470 SWSHDN 0.22µF , 6.3V22pF 22µF

3470 TA04

1µF V IN 7V TO 40V VOUT 200mA 604k 200k 33µH BIAS FB GND OFF ON C1: TDK C3216JB1H105M C2: CE JMK316 BJ226ML-T L1: TOKO A914BYW-330M=P3 Typical applicaTions 1.8V Step-Down Converter 12V Step-Down Converter VIN BOOST L T3470 SWSHDN 0.47µF , 6.3V22pF 22µF

3470 TA07

1µF V IN 4.7V TO 40V VOUT 2.5V 200mA 200k 200k C1: TDK C3216JB1H105M C2: TDK C2012JB0J226M L1: SUMIDA CDRH3D28 33µH BIAS FB GND OFF ON VIN BOOST L T3470 SWSHDN BIAS 0.22µF , 25V 22pF 22µF

3470 TA05

1µF V IN 4V TO 23V VOUT 1.8V 200mA 147k 332k 22µH FB GND OFF ON C1: TDK C3216JB1H105M C2: TDK C2012JB0J226M L1: MURATA LQH32CN150K53VIN BOOST L T3470 SWSHDN 0.22µF , 16V22pF 10µF

3470 TA06

1µF V IN 15V TO 34V VOUT 12V 200mA 866k 100k C1: TDK C3216JB1H105M C2: TDK C3216JB1C106M L1: MURATA LQH32CN150K53 33µH BIAS FB GND OFF ON

(Reference L TC DWG # 05-08-1637 Rev A) 1.50 – 1.75 (NOTE 4)2.80 BSC 0.22 – 0.36

8 PLCS (NOTE 3)

DATUM ‘A’ 0.09 – 0.20 (NOTE 3) TS8 TSOT-23 0710 REV A

2.90 BSC

(NOTE 4)

0.65 BSC

1.95 BSC

0.80 – 0.90

1.00 MAX

0.01 – 0.100.20 BSC 0.30 – 0.50 REF PIN ONE ID NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193

3.85 MAX

0.40 MAX 0.65 REF RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 1.4 MIN2.62 REF

1.22 REF

Please refer to http://www.linear .com/designtools/packaging/ for the most recent package drawings.

8-Lead Plastic DFN (3mm × 2mm) (Reference L TC DWG # 05-08-1702 Rev B) 2.00 ±0.10 (2 SIDES) NOTE: 1. DRAWING CONFORMS TO VERSION (WECD-1) IN JEDEC PACKAGE OUTLINE M0-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.40 ± 0.10 BOTTOM VIEW—EXPOSED PAD 0.56 ± 0.05 (2 SIDES) 0.75 ±0.05 R = 0.115 TYPR = 0.05 TYP 2.15 ±0.05 (2 SIDES) 3.00 ±0.10 (2 SIDES) PIN 1 BAR TOP MARK (SEE NOTE 6)

0.200 REF

0 – 0.05 (DDB8) DFN 0905 REV B 0.25 ± 0.05 2.20 ±0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 0.61 ±0.05 (2 SIDES) 1.15 ±0.05 0.70 ±0.05 2.55 ±0.05 PACKAGE OUTLINE 0.25 ± 0.05

0.50 BSC

R = 0.20 OR 0.25 × 45° CHAMFER Please refer to http://www.linear .com/designtools/packaging/ for the most recent package drawings.

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

revision hisTory

REV DATE DESCRIPTION PAGE NUMBER D 09/11 Corrected lead-based tape and reel part numbers in the Order Information section. 2 (Revision history begins at Rev D)

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com  LINEAR TECHNOLOGY CORPORA TION 2004 LT 0911 REV D • PRINTED IN USA relaTeD parTs PART NUMBER DESCRIPTION COMMENTS L T1616 25V , 500mA (IOUT), 1.4MHz, High Efficiency Step-Down DC/DC Converter VIN = 3.6V to 25V , VOUT = 1.25V , IQ = 1.9mA, ISD < 1µA, ThinSOT Package L T1676 60V , 440mA (IOUT), 100kHz, High Efficiency Step-Down DC/DC Converter VIN = 7.4V to 60V , VOUT = 1.24V , IQ = 3.2mA, ISD = 2.5µA, L T1765 25V , 2.75A (IOUT), 1.25MHz, High Efficiency Step-Down DC/DC Converter VIN = 3V to 25V , VOUT = 1.2V , IQ = 1mA, ISD = 15µA, S8, TSSOP16E Packages L T1766 60V , 1.2A (IOUT), 200kHz, High Efficiency Step-Down DC/DC Converter VIN = 5.5V to 60V , VOUT = 1.2V , IQ = 2.5mA, ISD = 25µA, TSSOP16/E Package L T1767 25V , 1.2A (IOUT), 1.25MHz, High Efficiency Step-Down DC/DC Converter VIN = 3V to 25V; VOUT = 1.2V , IQ = 1mA, ISD = 6µA, MS8/E Packages L T1776 40V , 550mA (IOUT), 200kHz, High Efficiency Step-Down DC/DC Converter VIN = 7.4V to 40V; VOUT = 1.24V , IQ = 3.2mA, ISD = 30µA, N8, S8 Packages LT C 1877 600mA (IOUT), 550kHz, Synchronous Step-Down DC/DC Converter VIN = 2.7V to 10V; VOUT = 0.8V , IQ = 10µA, ISD ≤ 1µA, L TC1879 1.2A (IOUT), 550kHz, Synchronous Step-Down DC/DC Converter VIN = 2.7V to 10V; VOUT = 0.8V , IQ = 15µA, ISD ≤ 1µA, L T1933 36V , 600mA, 500kHz, High Efficiency Step-Down DC/DC Converter VIN = 3.6V to 36V; VOUT = 1.25V , IQ = 2.5µA, ISD ≤ 1µA, ??? Package L T1934 34V , 250mA (IOUT), Micropower , Step-Down DC/DC Converter VIN = 3.2V to 34V; VOUT = 1.25V , IQ = 12µA, ISD ≤ 1µA, ??? Package L T1956 60V , 1.2A (IOUT), 500kHz, High Efficiency Step-Down DC/DC Converter VIN = 5.5V to 60V , VOUT = 1.2V , IQ = 2.5mA, ISD = 25µA, TSSOP16/E Package L TC3405/L TC3405A 300mA (I OUT), 1.5MHz, Synchronous Step-Down DC/DC Converter VIN = 2.7V to 6V , VOUT = 0.8V , IQ = 20µA, ISD ≤ 1µA, ThinSOT Package L TC3406/L TC3406B 600mA (I OUT), 1.5MHz, Synchronous Step-Down DC/DC Converter VIN = 2.5V to 5.5V , VOUT = 0.6V , IQ = 20µA, ISD ≤ 1µA, ThinSOT Package L TC3411 1.25A (IOUT), 4MHz, Synchronous Step-Down DC/DC Converter VIN = 2.5V to 5.5V , VOUT = 0.8V , IQ = 60µA, ISD ≤ 1µA, L TC3412 2.5A (IOUT), 4MHz, Synchronous Step-Down DC/DC Converter VIN = 2.5V to 5.5V , VOUT = 0.8V , IQ = 60µA, ISD ≤ 1µA, L TC3430 60V , 2.75A (IOUT), 200kHz, High Efficiency Step-Down DC/DC Converter VIN = 5.5V to 60V , VOUT = 1.2V , IQ = 2.5mA, ISD = 30µA,