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Document overview
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Technical content
Features
□ Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±30kV (Contact) IEC 61000-4-4 (EFT) 40A (5/50 ns) Cable Discharge Event (CDE) □ Package optimized for high-speed lines □ Ultra-small package (0.6mmx0.3mmx0.3mm) □ Protects one data, control or power line □ Low capacitance: 12pF (Typical) □ Low leakage current: 0.1uA @VRWM (Typical) □ Low clamping voltage □ Each I/O pin can withstand over 1000 ESD strikes for ±8kV contact discharge
Description
LT0501MA is a low-capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 12pF only, LT0501MA is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A,5/ 50 ns), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. LT0501MA uses ultra-small DFN0603 package. Each T0501MA device can protect one data line . It offers system designers flexibility to protect single data line where space is a premium concern.
Applications
□ Portable Electronics □ Desktops, Servers and Notebooks □ Cellular Phones □ MP3 Ports □ Digital Camera Ports Mechanical Characteristics □ DFN0603-2L package □ Flammability Rating: UL 94V-0 □ Packaging: Tape and Reel Circuit Diagram I/O_1 I/O_2 Pin Configuration DFN0603 (Top View) Low Capacitance ESD Protection Device LT0501MA ±30kV (Air) http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170301-P2
Symbol Parameter Value Units VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±30 ±30 kV TOPT Operating Temperature -55/+125 C TSTG Storage Temperature -55/+150 o C Electrical Characteristics (T = 25 C) Symbol Parameter VRWM Nominal Reverse Working V oltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown V oltage @ IT IT Test Current for Reverse Breakdown VC Clamping V oltage @ IPP IPP Maximum Peak Pulse Current CESD Parasitic Capacitance VR Reverse V oltage f Small Signal Frequency V I VRWMVBRVC IPP IR IT VRWM VBR VC IPP IR IT Bi-Directional TVS Symbol Test Condition Minimum Typical Maximum Units VRWM IR VRWM = 5V , T = 25oC Between I/O_1 and I/O_2 0.1 1.0 μA VBR IT = 1mA Between I/O_1 and I/O_2 5.5 6.0 8.0 V VC IPP = 1A, tp = 8/20μs Between I/O_1 and I/O_2 VC IPP = 4A, tp = 8/20μs Between I/O_1 and I/O_2 CESD VR = 0V , f = 1MHz Between I/O_1 and I/O_2 pF 5.0 V 10 V 15 V 10 1 2 15 o o Low Capacitance ESD Protection Device LT0501MA http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170301-P2
TLP Measurement of I/O_1 to I/O_2 0 2 4 6 8 10 12 14 16 TLP Voltage (V) TLP Current (A) Voltage Sweeping of I/O_1 to I/O_2 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08 0.10 0.12 -8 -6 -4 -2 0 2 4 6 8 Voltage (V) Current (A) Capacitance vs. Voltage of I/O_1 to I/O_2 (f = 1MHz) Capacitance vs. Reverse Voltage 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 1 2 3 4 5 Reverse Voltage (V) Capacitance (pF) ESD Clamping of I/O_1 to I/O_2 (+8kV Contact per IEC 61000-4-2) -20.0 -10.0 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 -50 0 50 100 150 200 Time (ns) Clamping Voltage (V) . Normalized Capacitance vs. Reverse Voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 1 2 3 4 5 Reverse Voltage (V) Normalized Capacitance ESD Clamping of I/O_1 to I/O_2 (-8kV Contact per IEC 61000-4-2) -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 -50 0 50 100 150 200 Time (ns) Clamping Voltage (V) . Low Capacitance ESD Protection Device LT0501MA http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170301-P3
Low Capacitance ESD Protection Device LT0501MA http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170301-P4
r e b m u N t r a Pr e p y t Q l e e R l e e R e z i S Carries Tape Specification Device Orientation in Tape Note:All dimensions in mm unless otherwise specified 10, 000LT0501MA 7inch A0 B0 K0 Date Code Location (Towards Sprocket Holes) Low Capacitance ESD Protection Device LT0501MA http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170301-P5