LSP5523 DIODES | Alldatasheet

Document overview

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Technical content

Features

 3A Output Current  Wide 4.5V to 27V Operating Input Range  Fixed 340KHZ Frequency  Integrated Power MOSFET Switches  Output Adjustable from 0.925V to 0.8Vin  Up to 93% Efficiency  Programmable Soft-Start  Stable with Low ESR Ceramic Output Capacitors  Cycle by Cycle Over Current Protection  Short Circuit Protection  Input Under Voltage Lockout  Package: ESOP-8L  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

Applications

 Distributed power systems  Networking systems  FPGA, DSP, ASIC power supplies  Green electronics/ appliances  Notebook computers Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Document number: DS44073 Rev. 7 - 2 2 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Block Diagram IN T E R N A L R E G U L A T O R S FB SS C O M P EN 1 .1 V 0 .3 V 0 .925 V 2 .5 V 1 .5 V O V P S H U T D O W N C O M P A R A T O R E R R O R A M P L IF IE R L O C K O U T C O M P A R A T O R E N O K 6 uA O S C IL L A T O R 3 4 0 /120 K H z R A M P C L K 1 .2 V O V P IN < 4 .10 V IN C U R R E N T C O M P A R A T O R C U R R E N T S E N S E A M P L IF IE R 5 V V IN BS SW G N D S Q R Q

Ordering Information

Part Number Package Package Code Packing Qty. Carrier LSP5523-R8A ESOP-8L R8 2,500pcs Tape & Reel

Document number: DS44073 Rev. 7 - 2 3 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Pin Assignment 1 8 SS EN C O M P FB BS V IN SW G N D (T O P V ie w ) E x p o s e d P a d o n B a c k s id e E S O P -8 L Pin Descriptions Pin Name Name Pin Description 1 BS Bootstrap. This pin acts as the positive rail for the high-side switch’s gate driver. Connect a 0.01uF capacitor between BS and SW. 2 VIN Input Supply. Bypass this pin to GND with a low ESR capacitor. See Input Capacitor in the Application Information section. 3 SW Switch Output. Connect this pin to the switching end of the inductor. 4 GND Ground. 5 FB Feedback Input. The voltage at this pin is regulated to 0.925V. Connect to the resistor divider between output and ground to set output voltage. 6 COMP Compensation Pin. See Stability Compensation in the Application Information section. 7 EN Enable Input. When higher than 2.7V, this pin turns the IC on. When lower than 1.1V, this pin turns the IC off. Output voltage is discharged when the IC is off. This pin should not be left open. Recommend to put a 200KΩ pull-up resistor to Vin for startup. 8 SS Soft-Start Control Input. SS controls the soft-start period. Connect a capacitor from SS to GND to set the soft-start period. A 0.1uF capacitor sets the soft-start period to 13ms. To disable the soft-start feature, leave SS unconnected. — Exposed Pad Exposed Pad. Need to connect to GND pin.

Document number: DS44073 Rev. 7 - 2 4 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Absolute Maximum Ratings(at TA=25°C) (Note 4) Note: Operate over the “Absolute Maximum Ratings” may cause permanent damage to the device. Exposure to such conditions for extended time may still affect the reliability of the device. Characteristics Value Unit Input Supply Voltage -0.3 to 30 V SW Voltage -0.3 to VIN + 0.3 V BS Voltage VSW – 0.3 to VSW + 6 V EN -0.3 to 8 V FB, COMP Voltage -0.3 to 5 V Continuous SW Current Internally limited A Maximum Junction Temperature 150 °C Storage Temperature Range -65 to 150 °C ESOP-8L Thermal Resistance(Junction to Case) 19 °C/W ESOP-8L Thermal Resistance(Junction to Ambient) 84 °C/W ESOP-8L Power dissipation 1450 mW Moisture Sensitivity (MSL) Please refer the MSL label on the IC package bag/carton for detail Note 4: Ratings apply to ambient temperature at 25°C. Recommended Operating Conditions Characteristics Min Max Unit Input Supply Voltage 4.5 27 (5) V Operating Junction Temperature -20 +125 (6) °C Note 5: Operating the IC over this voltage is very easy to cause over voltage condition to VIN pin, SW pin, BS pin & EN pin. Note 6: If the IC experienced OTP, then the temperature may need to drop to < 125 degree C to let the IC recover.

Document number: DS44073 Rev. 7 - 2 5 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523

Electrical Characteristics

(TA=25° C, unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Feedback Voltage VFB 4.5V ≤ VIN ≤ 27V 0.900 0.925 0.950 V Feedback Overvoltage Threshold — — — 1.1 — V High-Side Switch-On Resistance* — — — 90 — mΩ Low-Side Switch-On Resistance* — — — 70 — mΩ High-Side Switch Leakage — VEN = 0V, VSW = 0V — 0.1 10 uA Upper Switch Current Limit — Minimum Duty Cycle 3.8 4.5 — A Lower Switch Current Limit — From Drain to Source — 1.2 — A COMP to Current SenseLimit Transconductance GCS — — 5.2 — A/V Error Amplifier Transconductance GEA ΔICOMP = ± 10uA — 900 — uA/V Error Amplifier DC Gain* AVEA — — 400 — V/V Switching Frequency fSW — 300 340 380 KHz Short Circuit Switching Frequency — VFB = 0 — 100 — KHz Minimum Duty Cycle* Dmin — 7.5 — — % Maximum Duty Cycle Dmax — — 92 — % EN Shutdown Threshold Voltage — VEN Rising 1.1 1.4 2 V EN Shutdown Threshold Voltage Hysteresis — — — 180 — mV EN Lockout Threshold Voltage — — 2.2 2.5 2.7 V EN Lockout Hysteresis — — — 150 — mV Supply Current in Shutdown — VEN = 0 — 0.3 3.0 uA IC Supply Current in Operation — VEN = 3V, VFB = 1.0V — 1.3 1.5 mA Input UVLO Threshold Rising UVLO VEN Rising 3.8 4.0 4.5 V Input UVLO Threshold Hysteresis — — — 150 — mV Soft-start Current — VSS = 0V — 6 — uA Soft-start Period — CSS = 0.1uF — 13 — mS Thermal Shutdown Temperature* — Hysteresis =25° C — 155 — °C Note : * Guaranteed by design, not tested.

Document number: DS44073 Rev. 7 - 2 6 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Application Circuit LSP5523 application circuit, 3.3V/3A output. LSP5523 application circuit, 3.3V/3A output with EN function Note: C2 is required for separate EN signal.

© 2022 Copyright Diodes Incorporated. All Rights Reserved. peak ripple current being ~30% of the maximum output current. saturate at the current limit. Typical inductor values for various output voltages are shown in Table 2. Table 2. Typical Inductor Values

Document number: DS44073 Rev. 7 - 2 8 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Input Capacitor The input capacitor needs to be carefully selected to maintain sufficiently low ripple at the supply input of the converter. A low ESR Electrolytic (EC) capacitor is highly recommended. Since large current flows in and out of this capacitor during switching, its ESR also affects efficiency. When EC cap is used, the input capacitance needs to be equal to or higher than 100uF.The RMS ripple current rating needs to be higher than 50% of the output current. The input capacitor should be placed close to the VIN and GND pins of the IC, with the shortest traces possible. The input capacitor can be placed a little bit away if a small parallel 0.1uF ceramic capacitor is placed right next to the IC. When Vin is >15V, pure ceramic Cin (* no EC cap) is not recommended. This is because the ESR of a ceramic cap is often too small, Pure ceramic Cin will work with the parasite inductance of the input trace and forms a Vin resonant tank. When Vin is hot plug in/out, this resonant tank will boost the Vin spike to a very high voltage and damage the IC. Output Capacitor The output capacitor also needs to have low ESR to keep low output voltage ripple. In the case of ceramic output capacitors, R ESR is very small and does not contribute to the ripple. Therefore, a lower capacitance value can be used for ceramic capacitors. In the case of tantalum or electrolytic capacitors, the ripple is dominated by R ESR multiplied by the ripple current. In that cas e, the output capacitor is chosen to have sufficiently low ESR. For ceramic output capacitors, typically choose two capacitors of about 22uF. For tantalum or electrolytic capacitors, choose a capacitor with less than 50mΩ ESR. Optional Schottky Diode During the transition between high -side switch and low -side switch, the body diode of the low side power MOSFET conducts the inductor current. The forward voltage of this body diode is high. An optional Schottky diode may be paralleled between the SW pin and GND pin to improve overall efficiency. Table 3 lists example Schottky diodes and their Manufacturers. Table 3-Diode Selection Guide Vin max Part Number Voltage/Current Rating Vendor <20V B130 30V, 1A Diodes Incorporated <20V SK13 30V, 1A Diodes Incorporated >20V B140 40V, 1A Diodes Incorporated >20V SK14 40V, 1A Diodes Incorporated

© 2022 Copyright Diodes Incorporated. All Rights Reserved. Figure 2. Stability Compensation

2 COMPVEA

But limit RCOMP to 10KΩ maximum. More than 10 KΩ is easy to cause overshoot at power on.

Document number: DS44073 Rev. 7 - 2 10 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Stability Compensation (Continued) STEP2. Set the zero fZ1 at 1/4 of the crossover frequency. If RCOMP is less than 10KΩ, the equation for CCOMP is: 637.0 1 F fcR C COMP COMP STEP3. If the output capacitor’s ESR is high enough to cause a zero at lower than 4 times the crossover frequency, an additional compensation capacitor CCOMP2 is required. The condition for using CCOMP2 is: ESRCOUTR And the proper value for CCOMP2 is: C O M P E S R C O U TO U T 2C O M P R RC C  Though CCOMP2 is unnecessary when the output capacitor has sufficiently low ESR, a small value CCOMP2 such as 100pF may improve stability against PCB layout parasitic effects. Table 4 Component Selection Guide for Stability Compensation Vin Range (V) Vout, (V) Cout Rcomp, (kΩ) Ccomp, (nF) Ccomp2, (pF) Inductor, (uH) 5 – 12 1.0 22uF x2 Ceramic 2.4 6.8 none 4.7 5 – 15 1.2 3 6.2 none 4.7 5 – 15 1.8 6.2 3 none 10 5 – 15 2.5 8 2.2 none 10 5 – 15 3.3 10 2.2 none 10 7 – 15 5 10 2.2 none 10 5 – 12 1.0 470uF/ 6.3V/ 120 mΩ 10 10 680 10 5 – 15 1.2 5 – 23 1.8 5 – 27 2.5 5 – 27 3.3 7 – 27 5 (10) (11) (12)

© 2022 Copyright Diodes Incorporated. All Rights Reserved. Figure 3. Load Transient Testing VS Compensation Value

Document number: DS44073 Rev. 7 - 2 12 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Typical Characteristics (Vin=12V, IO=0mA, Temperature = 25°C, unless otherwise specified) Light Load Operation (No load) Heavy Load Operation (3A Load) Vin=12V, Iin=8.2 mA, Vout=3,3V Vin=12V, Vout=3,3V Startup Vin=12V, Vout=3.3V, Iout=1A through Vin. through Enable. Short Circuit Protection Vin=12V

Document number: DS44073 Rev. 7 - 2 13 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Typical Characteristics (Continued) EFFICIENCY vs LOAD CURRENT (Vout=3.3V) 62.0 66.0 70.0 74.0 78.0 82.0 86.0 90.0 94.0 98.0 0 0.5 1 1.5 2 2.5 3 3.5 LOAD CURRENT (A) EFFICIENCY (%) Vin=23 V Vin=12V Vin=5 V OUTPUT VOLTAGE (3.3V) vs LOAD CURRENT 3.2 3.225 3.25 3.275 3.3 3.325 3.35 3.375 3.4 0 0.5 1 1.5 2 2.5 3 3.5 4 LOAD CURRENT, (A) OUTPUT VOLTAGE, (V) Vin=5 V Vin=23 V Vin=12V OUTPUT VOLTAGE vs AMBIENT TEMPERATURE 3.2775 3.28 3.2825 3.285 3.2875 3.29 3.2925 3.295 3.2975 3.3 3.3025 3.305 3.3075 3.31 -50 -30 -10 10 30 50 70 90 110 130 150 AMBIENT TEMPERATURE, (C) OUTPUT VOLTAGE, (V) SWITCHING FREQUENCY vs AMBIENT TEMPERATURE 310 315 320 325 330 335 340 345 350 -50 -30 -10 10 30 50 70 90 110 130 150 AMBIENT TEMPERATURE, (C) SWITCHING FREQUENCY, (kHz) SWITCHES RdsON vs JUNCTION TEMPERATURE (Vin=12V) 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 10 30 50 70 90 110 130 150 170 JUNCTION TEMPERATURE (C) SWITCHES RdsON JUNCTION TEMPERATURE vs LOAD CURRENT (Ta=25C) 100 0 0.5 1 1.5 2 2.5 3 3.5 LOAD CURRENT, A JUNCTION TEMPERATURE, C Vin=23V Vin=12V Vin=5V

Document number: DS44073 Rev. 7 - 2 14 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Marking Information LSC LSP5523 VYYWWUZ Part ID LOGO V Y Y W W UZ In te rn a l C o d e D a te c o d e YY : Y e a r(0 9 = 2 0 0 9 ,1 0 = 2 0 1 0 ,1 1 = 2 0 1 1 ,1 2 = 2 0 1 2 ...) WW : W e e k (0 1 ~ 5 3 ) O u tp u t V o lta g e B la n k: A D J ESOP-8L

Document number: DS44073 Rev. 7 - 2 15 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 Mechanical Information (1) Package type: ESOP-8L Unit:mm Symbol Min Max A - 1.70 A1 - 0.15 A2 1.30 1.55 b 0.33 0.51 c 0.17 0.25 D 4.70 5.10 D1 3.10 REF E 5.80 6.20 E1 3.70 4.10 E2 2.21 REF e 1.27 BSC L 0.40 1.27 L1 1.00 1.10 Gauge Plane 0.25 BSC θ 0o 8o

Document number: DS44073 Rev. 7 - 2 16 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 MSL (Moisture Sensitive Level) Information IPC/JEDEC J-STD-020D.1 Moisture Sensitivity Levels Table LEVEL FLOOR LIFE SOAK REQUIREMENTS Standard Accelerated Equivalent 7 eV 0.40-0.48 eV 0.30-0.39 CONDITION TIME CONDITION TIME (hours) CONDITION TIME (hours) TIME (hours)

1 Unlimited ≤30 °C /85%

+5/-0 85 °C /85% RH NA NA NA 2 1 year ≤30 °C /60% RH 168 +5/-0 85 °C /60% RH NA NA NA 2a 4 weeks ≤30 °C /60% RH 6968 +5/-0 30 °C /60% RH 120 -1/+0 168 3 168 hours ≤30 °C /60% RH 1928 +5/-0 30 °C /60% RH -1/+0 4 72 hours ≤30 °C /60% RH 968 +2/-0 30 °C /60% RH +0.5/-0 5 48 hours ≤30 °C /60% RH 728 +2/-0 30 °C /60% RH +0.5/-0 a 24 hours ≤30 °C /60% RH 488 +2/-0 30 °C /60% RH +0.5/-0

6 Time on Label

(TOL) ≤30 °C /60% RH TOL 30 °C /60% RH NA NA NA Note 7: CAUTION - To use the ‘‘accelerated equivalent’’ soak conditions, correlation of damage response (including electrical, after soak and reflow), should be established with the ‘‘standard’’ soak conditions. Alternatively, if the known activation energy for moisture diffusion of the package materials is in the range of 0.40 - 0.48 eV or 0.30 - 0.39 eV, the ‘‘accelerated equivalent’’ document JESD22-A120 provides a method for determining the diffusion coefficient. Note 8: The standard soak time includes a default value of 24 hours for semiconductor manufacturer’s exposure time (MET) between bake and bag and includes the maximum time allowed out of the bag at the distributor’s facility. If the actual MET is less than 24 hours the soak time may be reduced. For soak conditions of 30 ° C/60% RH, the soak time is reduced by 1 hour for each hour the MET is less than 24 hours. For soak conditions of 60 ° C/60% RH, the soak time is reduced by 1 hour for each 5 hours the MET is less than 24 hours. If the actual MET is greater than 24 hours the soak time must be increased. If soak conditions are 30 ° C/60% RH, the soak time is increased 1 hour for each hour that the actual MET exceeds 24 hours. If soak conditions are 60 ° C/60% RH, the soak time is increased 1 hour for each 5 hours that the actual MET exceeds 24 hours. Mechanical Data  Moisture Sensitivity: Level 3 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.081 grams (Approximate)

Document number: DS44073 Rev. 7 - 2 17 of 17 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. LSP5523 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or us e of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. 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