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Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201122 5/02/2014 Rev#A7 ECN# LSK389
FEATURES
ULTRA LOW NOISE en = 0.9nV/√Hz (typ) TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389 ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150°C Junction Operating Temperature -55 to +135°C Maximum Power Dissipation Continuous Power Dissipation @ +25°C 400mW Maximum Currents Gate Forward Current IG(F) = 10mA Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS GS2GS1 VV Differential Gate to Source Cutoff Voltage 20 mV VDS = 10V, ID = 1mA DSS2 DSS1 I I Gate to Source Saturation Current Ratio 0.9 --- VDS = 10V, VGS = 0V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage -40 V VDS = 0, ID = -100µA VGS(OFF) Gate to Source Pinch-off Voltage -0.15 -2 V VDS = 10V, ID = 0.1µA IDSS Drain to Source Saturation Current LSK389A 2.6 6.5 mA VDS = 10V, VGS = 0 LSK389B 6 12 LSK389C 10 20 LSK389D 17 30 IGSS Gate to Source Leakage Current -200 pA VGS = -30V, VDS = 0 IG1G2 Gate to Gate Isolation Current ±1.0 µA VG1-G2 = ±45V, ID = IS = 0A LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER TO-71 Top View SOIC-A Top View * For equivalent single version, see LSK170 family Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201122 5/02/2014 Rev#A7 ECN# LSK389 ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS Gfs Full Conduction Transconductance 8 20 mS VDS = 10V, VGS = 0, f = 1kHz en Noise Voltage 0.9 1.9 Nv/√Hz VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz en Noise Voltage 2.5 4 Nv/√Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance 25 pF VDS = 10V, VGS = 0, f = 1MHz, CRSS Common Source Reverse Transfer Cap. 5.5 pF VDG = 10V, ID = 0, f = 1MHz, A
ORDERING INFORMATION
A B C D 2.6 - 6.5 mA 6 - 12 mA 10 - 20 mA 17 - 30 mA Package TO-71 SOIC-8 TO-71 6L SOIC-A 8L 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. NOTES: Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. PACKAGE DIMENSIONS TO-71 SOIC-A Note: All Dimensions in inches 0.210 0.170