LSIT120-2 LINEAR | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 BOTTOM VIEW 2 6 B1 E1 E2 B2 C1 C2

26 X 29 MILS

FEATURES

Direct Replacement for Intersil IT120 Series Pin for Pin Compatible ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA = 25°C unless otherwise noted) IC Collector Current 10mA Maximum Temperatures Storage Temperature Range -65 °C to +200°C Operating Temperature Range -55 °C to +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/ °C 4.3mW/ °C SYMBOL CHARACTERISTICS IT120A IT120 IT121 IT122 UNITS CONDITIONS BV CBO Collector to Base Voltage 45 45 45 45 MIN. V I C = 10µAI E = 0 BV CEO Collector to Emitter Voltage 45 45 45 45 MIN. V I C = 10µAI B = 0 BV CCO Collector to Collector Voltage 60 60 60 60 MIN. V I C = 10µAI E = 0 hFE DC Current Gain 200 200 80 80 MIN. I C = 10µAV CE = 5V 225 225 100 100 MIN. I C = 1.0mA VCE = 5V IEBO Emitter Cutoff Current 1 1 1 1 MAX. nA I C = 0 V EB = 3V ICBO Collector Cutoff Current 1 1 1 1 MAX. nA I E = 0 V CB = 45V C OBO Output Capacitance 2 2 2 2 MAX. pF I E = 0 V CB = 5V C C1C2 Collector to Collector Capacitance 2 2 2 2 MAX. pF V CC = 0 IC1C2 Collector to Collector Leakage Current 10 10 10 10 MAX. nA V CC = ±60V fT Current Gain Bandwidth Product 220 220 180 180 MIN. MHz I C = 1mA V CE = 5V NF Narrow Band Noise Figure 3 3 3 3 MAX. dB I C = 100µAV CE = 5V BW = 200Hz, RG = 10 KΩ f=1KHz ELECTRICAL CHARACTERISTICS T A =25°C (unless otherwise noted)

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 |VBE1 -VBE2 | Base Emitter Voltage Differential 1 2 3 5 MAX. mV I C = 10 µAV CE = 5V Δ|(VBE1 -VBE2 )|/ΔT Base Emitter Voltage Differential 3 5 10 20 MAX. µV/°CI C = 10 µAV CE = 5V Change with Temperature T = -55 °C to +125°C |IB1 - IB2 | Base Current Differential 2.5 5 25 25 MAX. nA I C = 10 µAV CE = 5V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS IT120A IT120 IT121 IT122 UNITS CONDITIONS NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE C1 1 N/C N/C P-DIP C1 1 N/C N/C 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC N/C 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00)