LSF905C1 MARKTECH | Alldatasheet
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LSF905C1 Infrared Emitting Diode @ Anode A Cathode FEATURES ¥High-output Power ¥Compact ¥High Reliability APPLICATIONS ¥Optical Switches ¥Optical Sensors ¥Medical Application 1. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL UNIT IF mA IFP A VR V PD mW Topr Tstg Tj Tls *2:Time 5 Sec max,Position:Up to 3mm from the body 100 260Lead Soldering Temp.*2 *1:Tw=10uS,T=10mS RATINGS Dimensions (Unit:mm) 0.5 100 -20 TO 85 -30 TO 100 Power Dissipation Operating Temp. Storage Temp. Junction Temp. I T E M Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage SPECTRAL OUTPUT 100 120 800 900 1000 WAVELENGTH(nm) RELATIVE POWER OUTPUT(%) To purchase this part contact Marktech Optoelectronics at 800.984.5337 Optoelectronics www.marktechopto.com Marktech
LSF905C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25) SYMBOL MIN TYP MAX UNIT PO 6.0 mW VF 1.3 1.6 V IR 100 ÊA Ép 910 nm ¢É 60 nm Æ ±25 deg. Tr | nS Tf | nS Cj 70 pF P/T -0.5 %/ V/T -1.6 mV/ CONDITIONS IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA IFP=50mA IFP=50mA 1MHz ,V=0V IF=10mA IF=10mA I T E M Power Output Forward Voltage Reverse Current Temp. Coefficient of VF Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Rise Time Fall Time Junction Capacitance Temp. Coefficient of PO THERMAL DERATING CURVE -30 0 30 60 90 AMBIENT TEMPERATURE() FORWARD CURRENT(mA) FORWARD I-V CHARACTERISTICS 0 1 2 3 FORWARD VOLTAGE(V) FORWARD CURRENT(mA) POWER OUTPUT vs TEMPERATURE IF=10mA 100 120 140 -30 0 30 60 90 AMBIENT TEMPERATURE() RELATIVE POWER OUTPUT(%) 1000 RADIATION PATTERN 100 120 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) RELATIVE POWER OUTPUT(%) RELATIVE POWER vs FORWARD CURRENT 100 150 200 250 300 350 400 0 20 40 60 80 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 AMBIENT TEMPERATURE() FORWARD VOLTAGE(V)