LSF811C1 MARKTECH | Alldatasheet
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LSF811C1 Infrared Emitting Diode @ Anode A Cathode FEATURES ¥High-output Power ¥Compact ¥High Reliability APPLICATIONS ¥Optical Switches ¥Optical Sensors ¥Medical Application 1. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL UNIT IF mA IFP A VR V PD mW Topr Tstg Tj Tls *2:Time 5 Sec max,Position:Up to 3mm from the body I T E M Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. 120 -20 TO 85 -30 TO 100 RATINGS Dimensions (Unit:mm) 0.5 100 260Lead Soldering Temp.*2 *1:Tw=10uS,T=10mS SPECTRAL OUTPUT 100 120 710 810 910 WAVELENGTH(nm) RELATIVE POWER OUTPUT(%) To purchase this part contact Marktech Optoelectronics at 800.984.5337 Optoelectronics www.marktechopto.com Marktech
LSF811C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25) SYMBOL MIN TYP MAX UNIT PO 6.5 mW VF 1.4 1.9 V IR 100 ÊA Ép 810 nm ¢É 30 nm Æ ±25 deg. Tr | nS Tf | nS Cj 60 pF P/T -0.6 %/ V/T -2.0 mV/Temp. Coefficient of VF Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Rise Time Fall Time Junction Capacitance Temp. Coefficient of PO I T E M Power Output Forward Voltage Reverse Current IFP=50mA 1MHz ,V=0V IF=10mA IF=10mA IF=20mA IF=20mA IF=20mA IFP=50mA CONDITIONS IF=20mA IF=20mA VR=5V THERMAL DERATING CURVE -30 0 30 60 90 AMBIENT TEMPERATURE() FORWARD CURRENT(mA) FORWARD I-V CHARACTERISTICS 0 1 2 3 FORWARD VOLTAGE(V) FORWARD CURRENT(mA) POWER OUTPUT vs TEMPERATURE IF=10mA 100 120 140 -30 0 30 60 90 AMBIENT TEMPERATURE() RELATIVE POWER OUTPUT(%) 910 RADIATION PATTERN 100 120 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) RELATIVE POWER OUTPUT(%) RELATIVE POWER vs FORWARD CURRENT 100 150 200 250 300 350 400 0 20 40 60 80 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 AMBIENT TEMPERATURE() FORWARD VOLTAGE(V)