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Document overview

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Technical content

Features

  • Designed for 1.65 V to 5.5 V VCC Operation
  • 2.7 ns tPD at 5 V (typ)
  • Inputs/Outputs Over−V oltage Tolerant up to 5.5 V
  • IOFF Supports Partial Power Down Protection
  • Source/Sink 24 mA at 3.0 V
  • Available in 1.45 mm x 1.0 mm UDFN8 Package
  • Chip Complexity < 100 FETs
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Figure 1. Logic Diagram

ORDERING INFORMATION

/C0071 (Note: Microdot may be in either location) *Assembly Operation Code orientation and/or may vary depending upon manufacturing location. 1 8 nc D C GND VCC Y A B

3 Input

5 Input

D C GND B A Y VCC Input Output Power Supply

Table 1. FUNCTION TABLE

www.onsemi.com MAXIMUM RATINGS Symbol Parameter Ratings Unit VCC DC Supply Voltage −0.5 to +6.5 V VIN DC Input Voltage −0.5 to +6.5 V VOUT DC Output Voltage Active−Mode (High or Low State) −0.5 to VCC+0.5 V Tri−State Mode (Note 1) −0.5 to +6.5 Power−Down Mode (VCC = 0 V) −0.5 to +6.5 IIK DC Input Diode Current VIN < GND −50 mA IOK DC Output Diode Current VOUT < GND −50 mA IOUT DC Output Source/Sink Current ±50 mA ICC or IGND DC Supply Current Per Supply Pin or Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C /C0113JA Thermal Resistance (Note 2) UDFN8 150 °C/W PD Power Dissipation in Still Air at 125°C UDFN8 833 mW MSL Moisture Sensitivity Level 1 FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in VESD ESD Withstand Voltage (Note 3) Charged Device Model > 2000 V Human Body Model > 1000 ILATCHUP Latchup Performance (Note 4) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tri−stated. 2. Measured with minimum pad spacing on an FR4 board, using 10mm – by – 1inch, 2 ounce copper trace no air flow. 3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recomm ends that ESD qualification to EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A. 4. Tested to EIA/JESD78 Class II. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage 1.65 5.5 V VIN Digital Input Voltage 0 5.5 V VOUT Output Voltage Active Mode (High or Low State) 0 VCC V Tri−State Mode (Note 1) 0 5.5 Power Down Mode (VCC = 0 V) 0 5.5 TA Operating Free−Air Temperature −55 +125 °C tr, tf Input Transition Rise or Fall Rate VCC = 1.65 V to 1.95 V 0 20 nS/V VCC = 2.3 V to 2.7 V 0 20 VCC = 3.0 V to 3.6 V 0 10 VCC = 4.5 V to 5.5 V 0 5 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

www.onsemi.com DC ELECTRICAL CHARACTERISTICS Conditions VCC (V) TA = 25°C TA = −55°C to +125°C Symbol Parameter Min Typ Max Min Max Unit VIH High−Level Input Voltage 1.65 to 1.95 0.65 x VCC − − 0.65 x VCC − V 2.3 to 5.5 0.70 x VCC − − 0.70 x VCC − VIL Low−Level Input Voltage 1.65 to 1.95 − − 0.35 x VCC − 0.35 x VCC V 2.3 to 5.5 − − 0.30 x VCC − 0.30 x VCC VOH High−Level Output Voltage VIN = VIH or VIL IOH = −100 /C0109A IOH = −4 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 VCC – 0.1 1.29 1.9 2.2 2.4 2.3 3.8 VCC 1.4 2.1 2.4 2.7 2.5 4.0 VCC – 0.1 1.29 1.9 2.2 2.4 2.3 3.8 − V VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 100 /C0109A IOL = 4 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 0.08 0.2 0.22 0.28 0.38 0.42 0.1 0.24 0.3 0.4 0.4 0.55 0.55 0.1 0.24 0.3 0.4 0.4 0.55 0.55 V IIN Input Leakage Current VIN = 5.5 V or GND IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V 0 − − 1.0 − 10 /C0109A ICC Quiescent Supply Current VIN = VCC or GND 5.5 − − 1.0 − 10 /C0109A AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS) Conditions VCC (V) TA = 25°C TA = −55°C to +125°C Symbol Characteristic Min Typ Max Min Max Unit tPLH, tPHL Propagation Delay, A to Y (Figures 3 and 4) RL = 1 M/C0087, CL = 15 pF 1.65 to 1.95 − 7.7 10 − 10.5 ns RL = 500 /C0087, CL = 50 pF − 3.5 5.7 − 6.0 RL = 500 /C0087, CL = 50 pF − 2.6 5.0 − 5.3 CAPACITAVE CHARACTERISTICS (Input tr = tf = 3.0 nS) Symbol Parameter Test Condition Typical (TA = 25 /C0053C) Unit CIN Input Capacitance VCC = 5.5 V, VIN = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VIN = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 3.3 V, VIN = 0 V or VCC 9 pF 10 MHz, VCC = 5.5 V, VIN = 0 V or VCC 11 5. C PD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD /C0083 VCC /C0083 fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD /C0083 VCC2 /C0083 fin + ICC /C0083 VCC.

www.onsemi.com Device Package Marking Pin 1 Orientation (see bellow) Shipping† NLSF457MU3TCG UDFN8, 1.45 x 1.0, 0.35P AA Q4 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. * NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC/C0042Q100 Qualified and PPAP Capable. Pin 1 Orientation in Tape and Reel Direction of Feed

www.onsemi.com PACKAGE DIMENSIONS UDFN8, 1.45x1, 0.35P CASE 517EB ISSUE O

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