LSDB3 SEMTECH_ELEC | Alldatasheet

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Dated : 18/01/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) LS-34 QuadroMELF Dimensions in mm LSDB3, LSDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with a typical breakover voltage of LSDB3 32 V, LSDB4 40 V. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Storage Temperature Range T S - 40 OC to +150 OC Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 µs duration, 120 cycle repetition rate) I P ± 2 A Max. Peak output voltage eP 3 ± Volts Max.1) Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit LSDB3 28 36 Breakover Voltage LSDB4 V(BR)1 and V(BR)2 35 45 V Breakover Currents I (BR)1 and I(BR)2 - 200 µA Breakover Voltage Symmetry [V (BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage ΔI = [IBR to IF = 10 mA] | ΔV ± | 5 - V Thermal Impedance Junction to Ambient Air R θJA - 60 OC/W 60~ 120 V ep DIAC 0.1 uF CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 3.3 K

120 VAC

0.1 uF 100 V TRIAC BILATERAL TRIGGER DIAC TYPICAL DIAC-TRIAC FULL-WAVE PHASE CONTROL CIRCUIT