LS843-5 LINEAR | Alldatasheet

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Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 BOTTOM VIEW 2 6

31 X 32 MILS

FEATURES

ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |ΔVGS1-2 /ΔT|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I= 1mV max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 60V -VDSO Drain to Source Voltage 60V -IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS843 LS844 LS845 UNITS CONDITIONS |ΔVGS1-2 /ΔT| max. Drift vs. Temperature 5 10 25 µV/°C V DG = 10V I D = 500µA TA = -55°C to +125°C |VGS1-2| max. Offset Voltage 1 5 15 mV V DG = 10V I D = 500µA LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 60 -- -- V V DS = 0 I D = 1nA BVGGO Gate-to-Gate Breakdown 60 -- -- V I G = 1nA I D = 0 I S= 0 TRANSCONDUCTANCE Yfss Full Conduction 1500 -- -- µmho V DG = 15V V GS = 0 f= 1kHz Yfs Typical Conduction 1000 1500 -- µmho V DG = 15V ID = 500µA |Yfs1-2/Yfs| Mismatch -- 0.6 3 % DRAIN CURRENT IDSS Full Conduction 1.5 5 15 mA V DG = 15V V GS = 0 |IDSS1-2 /IDSS | Mismatch at Full Conduction -- 1 5 % GATE VOLTAGE VGS (off) or VP Pinchoff Voltage 1 -- 3.5 V V DS = 15V ID = 1nA VGS Operating Range 0.5 -- 3.5 V V DS = 15V ID = 500µA GATE CURRENT -IG Operating -- 15 50 pA V DG = 15V ID = 500µA -IG High Temperature -- -- 50 nA V DG = 15V ID = 500µAT A = +125°C -IG Reduced VDG -- 5 30 pA V DG = 3V I D = 500µA -IGSS At Full Conduction -- -- 100 pA V DG = 15V V DS = 0

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE YOSS Full Conduction -- -- 20 µmho V DG = 15V V GS = 0 YOS Operating -- 0.2 2 µmho V DG = 15V I D = 500µA |YOS1-2| Differential -- 0.02 0.2 µmho C OMMON MODE REJECTION CMR -20 log | ΔVGS1-2/ΔVDS | 90 110 -- dB ΔVDS = 10 to 20V I D = 500µA CMR -- 85 -- dB ΔVDS = 5 to 10V I D = 500µA N OISE NF Figure -- -- 0.5 dB V DS = 15V V GS = 0 R G = 10MΩ f= 100Hz NBW= 6Hz en Voltage -- -- 7 nV/ √Hz V DS = 15V I D = 500µA f= 1kHz NBW= 1Hz en Voltage -- -- 11 nV/ √Hz V DS = 15V I D = 500µA f= 10Hz NBW= 1Hz CAPACITANCE C ISS Input -- -- 8 pF V DS = 15V I D = 500µA C RSS Reverse Transfer -- -- 3 pF C DD Drain-to-Drain -- 0.5 -- pF V DG = 15V I D = 500µA NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE S1 1 SS G1 S2 SS P-DIP S1 1 SS G1 S2 SS 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00)