LS840-2 LINEAR | Alldatasheet

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Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 BOTTOM VIEW 2 6

31 X 32 MILS

FEATURES

LOW NOISE en= 8nV/√Hz TYP. LOW LEAKAGE IG = 10pA TYP. LOW DRIFT |ΔVGS1-2 /ΔT|= 5µV/°C max. LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 60V -VDSO Drain to Source Voltage 60V -IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125 °C G1 S2 S1 G2 D1 D2 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS CONDITIONS |ΔVGS1-2 /ΔT| max. Drift vs. Temperature 5 10 40 µV/°C V DG = 20V I D = 200µA TA = -55°C to +125°C |VGS1-2| max. Offset Voltage 5 10 25 mV V DG = 20V I D = 200µA LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 60 -- -- V V DS = 0 I D = 1nA BVGGO Gate-to-Gate Breakdown 60 -- -- V I G = 1nA I D = 0 I S= 0 TRANSCONDUCTANCE Yfss Full Conduction 1000 4000 µmho V DG = 20V V GS = 0 f= 1kHz Yfs Typical Conduction 500 1000 µmho V DG = 20V ID = 200µA |Yfs1-2/Yfs| Mismatch -- 0.6 3 % DRAIN CURRENT IDSS Full Conduction 0.5 2 5 mA V DG = 20V V GS = 0 |IDSS1-2 /IDSS | Mismatch at Full Conduction -- 1 5 % GATE VOLTAGE VGS (off) or VP Pinchoff Voltage 1 2 4.5 V V DS = 20V ID = 1nA VGS Operating Range 0.5 -- 4 V V DS = 20V ID = 200µA GATE CURRENT -IG Operating -- 10 50 pA V DG = 20V ID = 200µA -IG High Temperature -- -- 50 nA V DG = 20V ID = 200µAT A = +125°C -IG Reduced VDG -- 5 -- pA V DG = 10V ID = 200µA -IGSS At Full Conduction -- -- 100 pA V DG = 20V V DS = 0

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE S1 1 SS G1 S2 SS P-DIP S1 1 SS G1 S2 SS 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE YOSS Full Conduction -- -- 10 µmho V DG = 20V V GS = 0 YOS Operating -- 0.1 1 µmho V DG = 20V I D = 200µA |YOS1-2| Differential -- 0.01 0.1 µmho COMMON MODE REJECTION CMR -20 log | ΔVGS1-2/ΔVDS | -- 100 -- dB ΔVDS = 10 to 20V I D = 200µA CMR -- 75 -- dB ΔVDS = 5 to 10V I D = 200µA NOISE NF Figure -- -- 0.5 dB V DS = 20V V GS = 0 R G = 10MΩ f= 100Hz NBW= 6Hz en Voltage -- -- 10 nV/ √Hz V DS = 20V I D = 200µA f= 1KHz NBW= 1Hz en Voltage -- -- 15 nV/ √Hz V DS = 20V I D = 200µA f= 10Hz NBW= 1Hz CAPACITANCE C ISS Input -- 4 10 pF V DS = 20V I D = 200µA C RSS Reverse Transfer -- 1.2 5 pF C DD Drain-to-Drain -- 0.1 -- pF V DG = 20V I D = 200µA