LS830-3 LINEAR | Alldatasheet

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Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 BOTTOM VIEW 2 6

22 X 20 MILS

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS830 LS831 LS832 LS833 UNITS CONDITIONS |ΔVGS1-2 /ΔT| max. Drift vs. Temperature 5 10 20 75 µV/°CV DG = 10V I D = 30µA TA = -55°C to +125°C |VGS1-2| max. Offset Voltage 25 25 25 25 mV V DG = 10V I D = 30µA -IG max Operating 0.1 0.1 0.1 0.5 pA -IG max High Temperature 0.1 0.1 0.1 0.5 nA T A = +125°C -IGSS At Full Conduction 0.2 0.2 0.2 1.0 pA -IGSS High Temperature 0.5 0.5 0.5 1.0 nA V GS = 0 V GS = -20V TA = +125°C ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET LS830 LS831 LS832 LS833

FEATURES

ULTRA LOW DRIFT |ΔVGS1-2 /ΔT|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE C ISS= 3pf MAX. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 40V -VDSO Drain to Source Voltage 40V -IG(f) Gate Forward Current 10mA -IG Gate Reverse Current 10 µA Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125 °C SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 40 60 -- V V DS = 0 I D = 1nA BV GGO Gate-to-Gate Breakdown 40 -- -- V I G = 1nA I D = 0 I S= 0 TRANSCONDUCTANCE Yfss Full Conduction 70 300 500 µmho V DG = 10V V GS = 0 f= 1kHz Yfs Typical Operation 50 100 200 µmho V DG = 10V I D = 30µA f= 1kHz |Yfs1-2/Yfs| Mismatch -- 1 5 % DRAIN CURRENT IDSS Full Conduction 60 400 1000 µAV DG = 10V V GS = 0 |IDSS1-2 /IDSS | Mismatch at Full Conduction -- 2 5 % GATE VOLTAGE VGS (off) or VP Pinchoff Voltage 0.6 2 4.5 V V DS = 10V I D = 1nA VGS Operating Range -- -- 4 V V DG = 10V I D = 30µA GATE CURRENT IGGO Gate-to-Gate Leakage -- 1 -- pA V GG = 20V

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE YOSS Full Conduction -- -- 5 µmho V DG = 10V V GS = 0 YOS Operating -- -- 0.5 µmho V DG = 10V I D = 30µA |YOS1-2| Differential -- -- 0.1 µmho COMMON MODE REJECTION CMR -20 log | ΔVGS1-2/ΔVDS |- - 9 0 - - d B ΔVDS = 10 to 20V I D = 30µA CMR -20 log | ΔVGS1-2/ΔVDS |- - 9 0 - - d B ΔVDS = 5 to 10V I D = 30µA NOISE NF Figure -- -- 1 dB V DS = 10V V GS = 0 RG = 10MΩ f= 100Hz NBW= 6Hz en Voltage -- 20 70 nV/ √Hz V DG = 10V I D = 30µA f= 10Hz NBW= 1Hz CAPACITANCE C ISS Input -- -- 3 pF V DS = 10V V GS = 0 f= 1MHz C RSS Reverse Transfer -- -- 1.5 pF V DS = 10V V GS = 0 f= 1MHz C DD Drain-to-Drain -- -- 0.1 pF V DG = 10V I D = 30µA NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE S1 1 SS G1 S2 SS P-DIP S1 1 SS G1 S2 SS 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00)