LS627 LINEAR | Alldatasheet
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FEATURES
DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature -55 to +165 °C Maximum Power Dissipation Continuous Power Dissipation 400mW Maximum Currents Gate Current 50mA Maximum Voltages Drain to Source 15V Drain to Gate 15V Gate to Source -10V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS VGS(off) Gate to Source Cutoff Voltage (VPO) 1.0 5.0 V VDS = 10V, ID = 0.1µA SG Gate Sensitivity2 6.4 24 µA/mW/cm2 VDS = 10V, VGS = 0V, λ = 0.9µm SD Drain Sensitivity3 500 mA/mW/cm2 VDS = 10V, VGS = 0V, RG = 1MΩ λIg Gate Current (Light)4 10 37.5 nA/FC VDS = 10V, VGS = 0V λId Drain Current (Light)4 800 µA/FC VDS = 10V, VGS = 0V, RG = 1MΩ IDSS Drain Saturation Current 8.0 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current (Dark) 30 pA VGS = -10V, VDS = 0V gfs Forward Transconductance (gm) 8000 µS VDS = 10V, VGS = 0V, f = 1kHz RDS(on) Drain to Source On Resistance 100 Ω VDS = 0.1V, VGS = 0V CGS Gate to Source Capacitance 35 VGS = -10V, f = 140kHz CGD Gate to Drain Capacitance 20 pF VGD = -10V, f = 140kHz tr Rise Time5 30 tf Fall Time6 50 ns VDS = 10V, RL = RG = 100Ω D S BOTTOM VIEW TO-72 4 C Linear Integrated Systems LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.
4 LEADS
0.046 0.036 45° 0.048 0.028 0.100 0.050 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Gate Current per unit Radient Power Density at Lens Surface 3. Drain Current per unit Radient Power Density (λ = 0.9µm). 4. Tungsten Lamp 2800°K Color Temperature. 5. GaAs Diode Source. 6. Directly Proportional to RG. 7. Not production tested. Guaranteed by design. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or