LS5911-2 LINEAR | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

FEATURES

Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYMBOL CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS GS2GS1 VV − Differential Gate to Source Cutoff Voltage 10 15 40 mV VDG = 10V, ID = 5mA VV∆ GS2GS1 − Differential Gate to Source Cutoff Voltage Change with Temperature 20 40 40 µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C DSS2 DSS1 I I Gate to Source Saturation Current Ratio 0.95 1 0.95 1 0.95 1 % VDS = 10V, VGS = 0V G2G1 II − Differential Gate Current 20 20 20 nA VDG = 10V, ID = 5mA TA = +125°C fs2 fs1 g g Forward Transconductance Ratio2 0.95 1 0.95 1 0.95 1 % VDS = 10V, ID = 5mA f = 1kHz CMRR Common Mode Rejection Ratio 85 dB VDG = 5V to 10V ID = 5mA PDIP-B NC NC SO IC -B NC NC PDIP-A SS SS SOIC-A SS SS BOTTOM VIEW TO -78 SOT-23 TOP VIEW BOTTOM VIEW TO -71 Linear Integrated Systems LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 -25 -25 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 VDS = 10V, ID = 1nA VGS(F) Gate to Source Forward Voltage 0.7 IG = 1mA, VDS = 0V VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4 V VDG = 10V, IG = 5mA IDSS Drain to Source Saturation Current3 7 40 7 40 7 40 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -1 -50 -50 -50 VGS = -15V, VDS = 0V IG Gate Operating Current -1 -50 -50 -50 pA VDG = 10V, ID = 5mA Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS f = 1kHz 4000 10000 4000 10000 4000 10000 gfs Forward Transconductance f = 100MHz 4000 10000 4000 10000 4000 10000 f = 1kHz 100 100 100 gos Output Conductance f = 100MHz 150 150 150 µS VDG = 10V, ID = 5mA Ciss Input Capacitance 5 5 5 Crss Reverse Transfer Capacitance 1.2 1.2 1.2 pF VDG = 10V, ID = 5mA f = 1MHz NF Noise Figure 1 1 1 dB VDG = 10V, ID = 5mA f = 10kHz, RG = 100KΩ f = 100Hz 7 20 20 20 nV/√Hz VDG = 10V, ID = 5mA f = 100Hz en Equivalent Input Noise Voltage f = 10kHz 4 10 10 10 nV/√Hz VDG = 10V, ID = 5mA f = 10kHz 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or SOIC-B NC NC PDIP-B NC NC Please contact the factory regarding the availability of optional packages. TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 0.029 0.045 SEATING PLANE SOT-23 DIMENSIONS IN MILLIMETERS 0.95 1.90 1.50 1.75 2.60 3.00 0.35 0.50 2.80 3.00 0.90 1.30 0.00 0.15 0.09 0.20 0.10 0.60 PDIP-A SS SS SOIC-A SS SS TO -71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 SOIC DIMENSIONS IN INCHES 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157 PDIP DIMENSIONS IN INCHES 4 5 0.145 0.170 0.060 0.100 0.250 0.375 0.038 0.295 0.320