LS4448

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/c183 /c183 /c183 /c183 /c183 @ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 /c183 Mechanical Data A D C B QuadroMELF Dim Min Max A 3.3 3.7 B 1.4 1.6 C 1.7/c198Typical D 0.3 Typical All Dimensions in mm 150mA Surface Mount Fast Switching Diode Maximum Ratings and Electrical Characteristics Component in accordance to RoHS 2002/95/EC Lead (Pb)-free component Quadro Melf package Electrical data iden Silicon Epitaxial Planar Diodes tical with the devices 1N4148 and 1N4448 respectively and WEEE 2002/96/EC Case: QuadroMELF Glass case (SOD80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box LS4148/LS4448 Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage V RRM 100 V Reverse voltage V R 75 V Peak forward surge current t p = 1 µs I FSM Repetitive peak forward current I FRM 500 mA Forward continuous current I F 300 mA Average forward current V R = 0 I FAV 150 mA Power dissipation P tot 500 mW Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage I F = 5 mA LS4448 V F 620 720 mV I F = 50 mA LS4148 V F 860 1000 mV I F = 100 mA LS4448 V F 930 1000 mV Reverse current V R = 20 V I R 25 nA V R = 20 V, T j = 150 °C I R 50 µA V R = 75 V I R 5µ A Breakdown voltage I R = 100 µA, t p /T = 0.01, t p = 0.3 ms V (BR) 100 V Diode capacitance V R = 0, f = 1 MHz, V HF = 50 mV C D 4p F Rectification efficiency V HF = 2 V, f = 100 MHz η r 45 % Reverse recovery time I F = I R = 10 mA, i R = 1 mA t rr 8n s I F = 10 mA, V R = 6 V, i R = 0.1 x I R , R L = 100 Ω t rr 4n s