LS4448 SEMTECH_ELEC | Alldatasheet
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Dated : 12/01/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) LS4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in QuadroMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage V RM 100 V Reverse Voltage V R 75 V Rectified Current (Average) Half Wave Rectification with Resist. Load (f ≥ 50 Hz) IO 150 1) mA Surge Forward Current at t < 1 s and T j = 25 OC I FSM 500 mA Power Dissipation P tot 500 1) mW Junction Temperature T j 175 OC Storage Temperature Range T S - 65 to + 175 OC 1) Valid provided that electrodes are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF 0.62 0.72 V Leakage Current at VR = 20 V at VR = 75 V IR nA µA Reverse Breakdown Voltage tested with 100 µA Pulses V(BR)R 100 - V Capacitance at VF = VR = 0 Ctot - 4 pF Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns Thermal Resistance Junction to Ambient Air RthA - 0.35 1) K/mW Rectification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 - - 1) Valid provided that electrodes are kept at ambient temperature. LS-34 QuadroMELF Dimensions in mm
Dated : 12/01/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Admissible power dissipation versus ambient temperature Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 400 300 200 100 0 100 200 C Ptot Tamb LL 4448 o mW VF 10 -1 210 310 LL 4448 iF Forward characteristics 10 4 210 LL 4448 rf Tj=25 C f=1KHz -210 02 V 103 -210 -110 1 10 10 mA 2 IF 500 600 700 800 900 1000 0.7 0.8 VR 601 0 V 1.1 1.0 0.9 Ctot(VR) Ctot(0V) LL 4448 Relative capacitance versus reverse voltage 24 8 Dynamic forward resistance versus forward current o Tj=25 Co Tj=100 Co Tj=25 C f=1MHz o mA LS4448
Dated : 12/01/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) 0.1 10 -5 2 1052 -4 IFRM 0.5 0.2 0.1 v=0 102105 -3 5 tp 52-2 -1 10 25 5 1 2 10 s T IFRM tp t Admissible repetitive peak forward current versus pulse duratin Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 100 100 Tj I 200 Co VR=20V Leakage current versus junction temperature IR 5 310 nA LL 4448 LL 4448 v=tp/T T=1/fp A ~~~ 2nF Rectification Efficiency Measurement Circuit V RF =2V Vo LS4448