LS421-6 LINEAR | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFETLinear Integrated Systems

22 X 20 MILS

C G1 S2 D1 D2 S1 G2 TO-78 BOTTOM VIEW Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

FEATURES

HIGH INPUT IMPEDANCE IG =0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS(off)=2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 40V -VDSO Drain to Source Voltage 40V -IG(f) Gate Forward Current 10mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125 °C SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 40 60 -- V V DS = 0 I G = 1nA BV GGO Gate-to-Gate Breakdown 40 -- -- V I G = 1µAI D = 0 I S= 0 TRANSCONDUCTANCE Yfss Full Conduction 300 -- 1500 µmho V DS = 10V V GS = 0 f= 1kHz Yfs Typical Operation 120 200 350 µmho V DG = 10V I D = 30µA f= 1kHz DRAIN CURRENT 60 -- 1000 µA LS421-3 V DS = 10V V GS = 0 IDSS Full Conduction 60 -- 1800 µA LS424-6 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS |ΔVGS1-2 /ΔT| max. Drift vs. Temperature 10 25 40 10 25 40 µV/°CV DG = 10V ID = 30µA TA =-55°C to +125°C |VGS1-2| max. Offset Voltage 10 15 25 10 15 25 mV V DG =10V ID = 30µA GATE VOLTAGE -IG max. High Temperature 250 250 250 500 500 500 pA T A = +125°C

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE YOSS Full Conduction -- -- 10 µmho V DS = 10V V GS = 0 YOS Operating -- 0.1 3.0 µmho V DG = 10V I D = 30µA COMMON MODE REJECTION CMR -20 log | ΔVGS1-2/ΔVDS |- - 9 0 - - d B ΔVDS = 10 to 20V I D = 30µA CMR -20 log | ΔVGS1-2/ΔVDS |- - 9 0 - - d B ΔVDS = 5 to 10V I D = 30µA NOISE NF Figure -- -- 1.0 dB V DG = 10V ID = 30µAR G = 10MΩ f= 10Hz en Voltage -- 20 70 nV/ √Hz V DG = 10V I D = 30µA f= 10Hz

10 V DG = 10V I D = 30µA f= 1kHz

C ISS Input -- -- 3.0 pF V DS = 10V V GS = 0 f= 1MHz C RSS Reverse Transfer -- -- 1.5 pF V DS = 10V V GS = 0 f= 1MHz NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE S1 1 SS G1 S2 SS P-DIP S1 1 SS G1 S2 SS 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00) Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261 N/C N/C N/C N/C