LS4448 TSC | Alldatasheet
Document overview
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Technical content
Features
Fast switching device (T RR< 4.0nS) Quadro Mini-MELF package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and leads are readily solderable RoHS compliant Matte Tin (Sn) lead finish 1 st band indicates cathode Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 o Cambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation Pd 500 mW Working Inverse Voltage WIV 75 V Non-repetitive Peak Forward Current IFM 450 mA Average Rectified Current Io 150 mA Peak Forward Surge Current IFSURGE 2 A Operating Junction Temperature TJ 175 O C Storage Temperature Range TSTG -65 to + 200 O C
Electrical Characteristics
Type Number Symbol Min Max Units Breakdown Voltage IR=100uA I R = 5 u A BV 100 75 V Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF= 10mA LS4448, LS914B IF =100mA VF 0.62 0.72 1.0 1.0 V Reverse Leakage Current VR=20V VR=75V IR 5 nA uA Junction Capacitance VR=0, f=1.0MHz Cj - 4.0 pF Reverse Recovery Time (Note 1) trr - 4.0 nS Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA Version: B07
Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Diode Capacitance vs. Reverse Voltage