LS4148_15 TSC | Alldatasheet

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Small Signal Product CREAT BY ART - Fast switching device (trr<4.0ns) - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable - Case: QUADRO Mini-MELF Package - High temperature soldering guaranteed : 270 oC/10s - Polarity : Indicated by black cathode band - Weight : 29 ± 2.5mg SYMBOL UNIT PD mW VRSM V VRRM V IFSM A IFM mA IO mA (Note 1) RθJA °C/W TJ , TSTG °C SYMBOL UNIT IR=100μA IR=5μA Forward Voltage IF=5.0mA IF=10.0mA IF=100.0mA VR=20V nA VR=75V μA VR=0, f=1.0MHz C J pF trr ns Document Number: DS_S1501008 Version: E15 Note 1: Valid provided that electrodes are kept at ambient temperature Note 2: Reverse recovery test conditions: IF=10mA to IR=1mA, RL=100Ω, VRR=6 V Reverse Recovery Time - (Note 2) Junction Capacitance - 4.0 4.0 LS4148 LS4448, LS914B V V V(BR) Junction and Storage Temperature Range Thermal Resistance (Junction to Ambient) Mean Forward Current Non-Repetitive Peak Forward Current Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Power Dissipation PARAMETER -65 to +175 300 150 450 2Peak Forward Surge Current MAXMIN 100 500 V F IR Reverse Breakdown Current LS4448, LS914B Reverse Leakage Current 100 0.72 1.0 1.0 5.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE LS4148/LS4448/LS914B Taiwan Semiconductor 500mW High Speed SMD Switching Diode

FEATURES

QUADRO Mini-MELF (LS34)

Small Signal Product CREAT BY ART (TA=25°C unless otherwise noted) Document Number: DS_S1501008 Version: E15 LS4148/LS4448/LS914B Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES 0.01 0.1 100 0 20 40 60 80 100 120 Reverse Current (uA) Reverse Voltage (V) Fig. 2 Reverse Current VS. Reverse Voltage TA=25oC 0.0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 Junction Capacitance (pF) Reverse Voltage (V) Fig. 4 Typical Junction Capacitance 100 1000 10000 0.01 0.1 1 10 100 Dynamic Forward Resistance (Ohm) Forward Current (mA) Fig. 5 Forward Resistance VS. Forward Current 100 200 300 400 500 600 0 25 50 75 100 125 150 175 200 Power Dissipation (mW) Ambient Temperature (oC) Fig. 3 Admissible Power Dissipation Curve 0.001 0.01 0.1 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) Fig. 1 Typical Forward Characteristics TA=25oC

A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.45 0.008 0.018 D A B C D Document Number: DS_S1501008 Version: E15 5.00 0.197 ORDER INFORMATION (EXAMPLE) Typ. 1.8 Typ. 0.071 1.25 0.049 2.00 0.079 2.50 0.098 PACKAGE OUTLINE DIMENSION DIM. Unit (mm) Unit (inch) SUGGEST PAD LAYOUT DIM. Unit (mm) Unit (inch) Typ. Typ. LS4148/LS4448/LS914B Taiwan Semiconductor Small Signal Product LS4148 L0G Green compound code Packing code Part no. C B A D

assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1501008 Version: E15 LS4148/LS4448/LS914B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,