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Hermetically Sealed Glass Fast Switching Diodes Elektronische Bauelemente 14-Apr-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast Switching Device (T RR < 4.0nS) QUADRO Mini-MELF Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable Matte Tin (Sn) Lead Finish Color band Indicates Negative Polarity ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Power Dissipation P D 500 mW Operating Junction and Storage Temperature Range TJ, TSTG 150, -65~150 °C Working Inverse Voltage W IV 75 V Average Rectified Current I O 150 mA Non-repetitive Peak Forward Current I FM 450 mA Peak Forward Surge Current I FSURGE 2 A Notes: 1. These ratings are limiting va lues above which the serviceability of the diode may be impaired. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Limits Unit Test Condition Min Max Breakdown Voltage B V 100 - V IR=100μA 75 - I R=5μA Reverse Leakage Current I R - 25 nA V R=20V - 5 μA V R=75V Forward Voltage V F - 1.0 V I F=10mA Reverse Recovery Time T RR 4 nS IF=IR=10mA RL=100Ω IRR=1mA Capacitance C - 4 pF V R=0, f=1MHz QUADRO Mini-MELF REF. Millimeter Min. Max. A 3.30 3.70 B 1.40 1.60 C 0.35 0.45 D 1.8 Typ. D A C C B Cathode Anode