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Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201129 05/21/2014 Rev#A4 ECN#LS3550

FEATURES

6 LEAD SOT-23 SURFACE MOUNT PACKAGE*

EXCELLENT THERMAL TRACKING1 3µV/°C ABSOLUTE MAXIMUM RATINGS2 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation TBD Maximum Currents Collector Current 50mA Maximum Voltages Collector to Collector Voltage 60V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS3550A LS3550B LS3550C UNIT CONDITIONS MIN MAX MIN MAX MIN MAX BE2BE1 VV  Base to Emitter Voltage Differential 2 5 10 mV IC = -100µA, VCE = -5V ΔT VV BE2BE1  Base to Emitter Voltage Differential Change with Temperature 3 5 15 µV/°C IC = -100µA, VCE = -5V TA = -40°C to +85°C B2B1 II  Base Current Differential 10 10 10 nA IC = -500µA, VCE = -5V ΔT II B2B1  Base Current Differential Change with Temperature 0.5 0.5 1.0 nA/°C IC = -500µA, VCE = -5V TA = -40°C to +85°C FE2 FE1 hh Current Gain Differential 10 10 15 % IC = -1mA, VCE = -5V ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS3550A LS3550B LS3550C UNIT CONDITIONS MIN MAX MIN MAX MIN MAX BVCBO Collector to Base Breakdown Voltage -45 -40 -20 15 IC = -10µA, IE = 0A BVCEO Collector to Emitter Breakdown Voltage -45 -40 -20 16 IC = -5mA, IB = 0A BVCCO Collector to Collector Breakdown Voltage ±60 ±60 ±60 V ICC = -±1µA, IB=IC =0A BVEBO Emitter to Base Breakdown Voltage3 -6.0 -6.0 -6.0 IE = -10µA, IC = 0A VCE(SAT) Collector to Emitter Saturation Voltage -0.50 -0.50 -1.2 IC = -10mA IB = -1mA LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS SOT-23 TOP VIEW PDIP NC NC SOIC NC NC *SOT-23 TOP VIEW TO-78 TOP VIEW TO-71 TOP VIEW PDIP TOP VIEW SOIC TOP VIEW

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201129 05/21/2014 Rev#A4 ECN#LS3550 SYMBOL CHARACTERISTIC LS3550A LS3550B LS3550C UNIT CONDITIONS MIN MAX MIN MAX MIN MAX hFE DC Current Gain 150 100 50 IC = -1mA, VCE = -5V 120 80 40 IC = -10mA, VCE = -5V 100 60 30 IC = -50mA, VCE = -5V ICBO Collector Cutoff Current -0.35 -0.35 nA IE = 0A, VCB = -30V -0.35 IE = 0A, VCB = -20V IEBO Emitter Cutoff Current -0.35 -0.35 -0.35 IE = 0A, VCB = -3V IC1C2 Collector to Collector Leakage Current ±1 ±1 ±1 µA VCC = ±60V, IB=IC =0A COBO Output Capacitance 2 2 2 pF IE = 0A, VCB = -10V fT Gain Bandwidth Product (Current) 600 600 600 MHz IC = -1mA, VCE = -5V NF Noise Figure (Narrow Band) 3 3 3 dB IC = -100µA, VCE = -5V BW = 200Hz RB = 10Ω, f = 1kHz *Standard package is SOT-23 6 lead. Other packages listed are optional. Contact factory regarding availability of optional packages. SOT-23 DIMENSIONS IN MILLIMETERS 0.95 1.90 1.50 1.75 2.60 3.00 0.35 0.50 2.80 3.00 0.90 1.30 0.00 0.15 0.09 0.20 0.10 0.60 0.210 0.170 PDIP DIMENSIONS IN INCHES 4 5 0.145 0.170 0.060 0.100 0.250 0.375 0.038 0.295 0.320 SOIC 4 5 DIMENSIONS IN INCHES 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157 SOT-23 TO-71 TO-78 PDIP SOIC NOTES 1. Maximum rating for LS3550A, SOT23-6. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. 3. The reverse Base-to-Emitter voltage must never exceed -6.0 Volts. The reverse Base-to-Emitter current must never exceed -10µA. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)