3550 LINEAR | Alldatasheet

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Technical content

FEATURES

6 LEAD SOT-23 SURFACE MOUNT PACKAGE*

EXCELLENT THERMAL TRACKING1 3µV/°C ABSOLUTE MAXIMUM RATINGS2 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation TBD Maximum Currents Collector Current 50mA Maximum Voltages Collector to Collector Voltage 80V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS3250A LS3250B LS3250C SYMBOL CHARACTERISTIC MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BE2BE1 VV − Base to Emitter Voltage Differential 2 5 10 mV IC = -10mA, VCE = -5V VV BE2BE1 − Base to Emitter Voltage Differential Change with Temperature 3 5 15 µV/°C IC = -10mA, VCE = -5V TA = -40°C to +85°C B2B1 II − Base Current Differential 10 10 10 nA IC = -10µA, VCE = -5V II B2B1 − Base Current Differential Change with Temperature 0.5 0.5 1.0 nA/°C IC = -10µA, VCE = -5V TA = -40°C to +85°C FE2 FE1 hh Current Gain Differential 10 10 15 % IC = -10µA, VCE = -5V ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS3250A LS3250B LS3250C SYMBOL CHARACTERISTIC MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVCBO Collector to Base Breakdown Voltage -45 -40 -20 IC = -10mA, IE = 0A BVCEO Collector to Emitter Breakdown Voltage -45 -40 -20 BVCCO Collector to Collector Breakdown Voltage -80 -80 -80 IC = -10µA, IE = 0A BVEBO Emitter to Base Breakdown Voltage3 -6.2 -6.2 -6.2 IE = -10µA, IC = 0A VCE(SAT) Collector to Emitter Saturation Voltage -0.25 -0.25 -1.2 V IC = -100mA IB = -10mA LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems PDIP NC NC NC SOIC NC BOTTOM VIEW TO -71 BOTTOM VIEW TO-78 B1 B2 SOT-23 TOP VIEW Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated) LS3250A LS3250B LS3250C SYMBOL CHARACTERISTIC MIN MAX MIN MAX MIN MAX UNIT CONDITIONS 150 100 50 IC = -1mA, VCE = -5V 120 80 40 IC = -10mA, VCE = -5V hFE DC Current Gain 100 80 40 IC = -100mA, VCE = -5V -0.2 -0.2 IE = 0A, VCB = -30V ICBO Collector Cutoff Current -0.2 IE = 0A, VCB = -20V IEBO Emitter Cutoff Current -0.2 -0.2 -0.2 IE = 0A, VCB = -3V IC1C2 Collector to Collector Leakage Current -1 -1 -1 nA VCC = ±80V COBO Output Capacitance 2 2 2 pF IE = 0A, VCB = -10V fT Gain Bandwidth Product (Current) 600 600 600 MHz IC = -1mA, VCE = -5V NF Noise Figure (Narrow Band) 3 3 3 dB IC = -100µA, VCE = -5V BW = 200Hz RB = 10Ω, f = 1kHz NOTES: 1. Maximum rating for LS3550A, SOT23-6. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. 3. The reverse Base to Emitter voltage must never exceed -6.2 Volts. The reverse Base to Emitter current must never exceed -10µA. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or SOIC DIMENSIONS IN INCHES 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157 PDIP DIMENSIONS IN INCHES 4 5 0.145 0.170 0.060 0.100 0.250 0.375 0.038 0.295 0.320 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 0.029 0.045 SEATING PLANE TO -71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 SOT-23 DIMENSIONS IN MILLIMETERS 0.95 1.90 1.50 1.75 2.60 3.00 0.35 0.50 2.80 3.00 0.90 1.30 0.00 0.15 0.09 0.20 0.10 0.60 Standard package is SOT23 6 lead. Other packages listed are optional. Contact factory regarding availability of optional packages.