LS320 LINEAR | Alldatasheet

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FEATURES

HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +125 °C Maximum Power Dissipation Continuous Power Dissipation @ +125 °C 200mW Maximum Currents Drain Current ID = 25mA Maximum Voltages Drain to Source1 VDSO = 20V Gate to Source VGSS = 20V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS VDS Drain to Source Voltage -20 V IDS = 100µA, VGS = 0V VGS Gate to Source Voltage -12 -10 -7 V IDS = 10mA, Vgs = -10V2,3 gfs Common Source Forward Transconductance 30,000 µS IDS = 10mA, VDS = -10V, f = 1kHz goss Common Source Output Conductance 300 µS IDS = 10mA, VDS = -10V, f = 1kHz rGs Gate to Source Input Resistance 100 GΩ VGS = 0 to 20V, TJ to 125 °C CISS Input Capacitance 8 pF IDS = 10mA, VDS = -10V CRSS Reverse Transfer Capacitance 1.5 pF IDS = 10mA, VDS = -10V en Noise Voltage 25 µV IDS = 10mA, VDS = 10V BW = 50 to 15kHz LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems PACKAGE OPTIONS G S D TO-92 BOTTOM VIEW 123 DS G SOT-23 TOP VIEW D S G FUNCTIONAL SCHEMATIC S S BOTTOM VIEW TO-72 4 G 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. The gate to source voltage must never exceed 100V, t < 10ms. 3. Additional screening available Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261