LS310-3 LINEAR | Alldatasheet

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Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 BOTTOM VIEW 2 6 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS BV CBO Collector to Base Voltage 25 45 60 45 MIN. V I C = 10µAI E = 0 BV CEO Collector to Emitter Voltage 25 45 60 45 MIN. V I C = 10µAI B = 0 BV CCO Collector to Collector Voltage 30 100 100 100 MIN. V I C = 10µAI E = 0 hFE DC Current Gain 150 150 200 400 MIN. I C = 10µAV CE = 5V 1000 MAX. hFE DC Current Gain 150 150 200 400 MIN. I C = 100µAV CE = 5V hFE DC Current Gain 150 150 200 400 MIN. I C = 1mA V CE = 5V C OBO Output Capacitance 2 2 2 2 MAX. pF I E = 0 V CB = 5V C C1C2 Collector to Collector Capacitance 2 2 2 2 MAX. pF V CC = 0 fT Current Gain Bandwidth Product 200 200 200 200 MIN. MHz I C = 1mA V CE = 5V NF Narrow Band Noise Figure 3 3 3 3 MAX. dB I C = 100µAV CE = 5V BW = 200Hz, RG = 10 KΩ f=1KHz

FEATURES

VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA TIGHT VBE MATCHING |V BE1 -VBE2 | = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) IC Collector Current 10mA Maximum Temperatures Storage Temperature -65 ° to +200°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/ °C 4.3mW/ °C B1 E1 E2 B2 C1 C2

26 X 29 MILS

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS |VBE1 -VBE2 | Base Emitter Voltage Differential 1 0.4 0.2 0.4 TYP. mV I C = 10 µAV CE = 5V 3 1 0.5 1 MAX mV. Δ|(VBE1 -VBE2 )|/°C Base Emitter Voltage Differential 2 1 0.5 1 TYP. µV/°CI C = 10 µAV CE = 5V Change with Temperature 15 5 2 5 MAX. T A = -55°C to +125°C |IB1 - IB2 | Base Current Differential 1.25 TYP. nA I C = 10µAV CE = 5V 10 5 5 MAX. nA |Δ(IB1 -IB2 )|/°C Base Current Differential 0.5 0.3 0.5 MAX. nA/ °CI C = 10µAV CE = 5V Change With Temperature T A = -55°C to +125°C hFE1 /hFE2 Current Gain Differential 10 5 5 5 TYP. % I C = 10µAV CE = 5V TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 4 678 0.029 0.045 SEATING PLANE C1 1 N/C N/C P-DIP C1 1 N/C N/C 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) SOIC N/C 0.320 0.290 (8.13) (7.37) 0.405 MAX. (10.29) (4.78) (5.00) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. For LS310: V CB = 20V; for LS311, LS312 & LS313: VCB = 30V. 4. For LS310, LS311 & LS313: VCC = ±45V; for LS312: VCC = ±100V.