LS2405IDD23

LS2405IDD23 LITTELFUSE | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 8

Technical content

Features

Description

Applications

■ Wide Input Range from 2.7V to 24V ■ Surge up to 28V ■ Replace a Power Schottky diode with an Integrated 35mΩ N-Channel MOSFET ■ Fast Turn-off Limits Reverse Current ■ Smooth Current Transfer from One Power to the Other Power ■ Input Supply Rail Discharging Function ■ Available in 8 lead 2mmx3mm DFN Packages ■ Pb-Free and RoHS Compliant ■ USB PD TypeC Ports ■ Mutil-input power supply ■ Telecom Infrastructure ■ Automotive Systems Pin Description Pin Name Pin IN 1, 2 Input voltage. Source of the internal N-channel MOSFET . GND 3 Ground pin. DISC 4 Input Discharge control input pin. Set DISC pin logic Hi to discharge input through an internal 50ohm resistor to ground. Set DISC pin logic Lo to disable input discharge. function. EN 5 Internal N-channel MOSFET Enable pin. EN has accurate ON/OFF threshold of 1 .2V and 1 .0V respectively. Pull it above ON threshold to enable the MOSFET . Pull it below OFF threshold to disable the MOSFET , and the LS2405IDD23 only draws 3µA from the AOUT pin. The MOSFET body diode (IN: Anode; OUT : Cathode) can still conduct current when EN pin is pull below OFF threshold. To enable MOSFET all the time, connect EN pin to AOUT pin. AOUT 6 Supply of the internal circuit. Either connect this pin to OUT directly or bypass this pin to GND with a 1µF ceramic capacitor to form a RC hold-up circuit. OUT 7, 8 Output voltage. Drain of the internal N-channel MOSFET . OUTDRAIN AOUT 500ohm Charge Pump LDO Gate Amp Fpd Comp GND IN 25mV 15mV EN GND DISC 50ohm 35mohm SOURCE GATE Functional Block Diagram

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS2405IDD23 24V, 5A Very Low Forward Voltage Diode Absolute Maximum Rating (Reference to GND) * Notes:Stress exceeding those listed “Absolute Maximum Ratings” may damage the device. Symbol Value Units Supply Voltage IN, OUT , AOUT -0.3 to +28 V Control Pin EN -0.3 to +28 V Control Pin DISC -0.3 to +6 V ESD, Human Body Model (HBM) ±2000 V Junction Temperature Range -40 to +150 °C Storage Temperature Range -65 to +150 °C Lead Temperature (Soldering 10s) 260 °C Recommend Operating Conditions Symbol Value Units Supply Input Voltage, VIN +3 to +24 V Operating Voltage, VOUT +2.7 to +24 V Junction Temperature Range -40 to +125 °C * Notes: The device is not guaranteed to function outside of the recommended operating conditions. Symbol Value Units Maximum Power Dissipation (TA=25°C ) 1. 4 W Thermal Resistance (θJA) 72.11 °C/W Thermal Resistance (θJC) 30.14 °C/W Note1: Measured on JESD51-7, 4-Layer PCB. Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature TJ_MAX, the junction to ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD_MAX= (TJ_MAX-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Thermal information Symbol Parameter T est Conditions Min Ty p Max Unit VIN Input Voltage Range 2.7 24 V IIN Quiescent Current VIN =5V , VEN=5V , IOUT=0 300 350 µA IAOUT VIN =0V , VOUT=VAOUT=VEN=5V , IOUT=0 90 µA ISTBY Standby Current (Intenal MOSFET Disabled) VIN =24V , VEN=0V 4 6 µA VENR EN Turn-on Threshold EN Rising 1. 1 1. 2 1. 3 V VENF EN Turn-off Threshold EN Falling 0.9 1. 0 1. 1 V IEN EN Internal Pull up Current VEN =1 .2V 0.1 0.5 µA VOUTR Output UVLO Rising Threshold AOUT=OUT , Output Rising 2.1 2.2 2.3 V VOUTF Output UVLO Falling Threshold AOUT=OUT , Output Falling 1 .95 2.05 2.15 V tON MOSFET Turn-On Time From EN Lo-to-Hi to MOSFET fully On 90 µs tOFF MOSFET Turn-Off Time From VOUT-VIN>15mV to MOSFET off 300 ns △VSD Source-Drain Regulation Voltage IOUT=100mA 10 25 40 mV △VREV Source-Drain Reverse Current Blocking Threshold Voltage -15 mV VDIODE N-Channel MOSFET Body diode Forward Voltage Drop VIN=5V , VEN=0V , IOUT=100mA 0.6 0.8 V RDS(ON) N-Channel MOSFET Ron VIN=VEN=5V , IOUT= 2A 35 mΩ INCH_LKG N-Channel MOSFET Leakage Current VIN=VEN=0V , VOUT=24V , Measure IIN 1 10 µA VHI DISC Logic Input High 1. 2 V VLO DISC Logic Input Low 0.4 V RDPD DISC Internal Pull Down Resistor 700 1000 1300 kΩ RDISC Input Voltage Discharge Resistor VIN=VDISC=5V , VEN=0V 50 100 Ω Electrical Characteristics (TA = +25°C, V IN=12V, OUT=AOUT=EN, CIN=COUT= 1µF, unless otherwise specified)

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS2405IDD23 24V, 5A Very Low Forward Voltage Diode Power Dissipation Vs Load Current 001 12 23 34 45 56 67 7 Power Dissipation(W) Load Current(A) Quiescent Current vs V IN IQ(mA) VIN (V) 200 240 280 320 360 400 05 10 15 20 Shut Down Current vs VIN Isd (µA) VIN (V) 3.2 3.4 3.6 3.8 05 10 15 20 OUT Current vs VOUT IOUT (µA) VOUT (V) 100 05 10 15 20 MOSFET Turn On 20us/div VOUT VIN=12V EN 2V/div 1V/div VOUT=12V VIN IOUT=0A 2V/div VIN1=12V VIN2=5V VOUT IOUT=1A 2V/div VIN2 2V/div IIN2 1A/div VIN1 2V/div 10ms/div Switchover from a Lower Input to a Higher Input Supply

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS2405IDD23 24V, 5A Very Low Forward Voltage Diode Switchover from a Higher Input to a Lower Input Supply VIN1=12V VIN2=5V VOUT IOUT=1A 2V/div VIN2 2V/div IIN2 1A/div VIN1 2V/div 4ms/div VIN=12V VOUT=12V VOUT IOUT=5A 5V/div IIN VIN 2A/div 5V/div 10ms/div VIN Power on 2-Redudant Input Supplies Switchover VIN2=12V VOUT=12V VOUT IOUT=5A 5V/div VIN2 5V/div IIN2 2A/div VIN1 5V/div 20ms/div VIN2=12V VOUT=12V VOUT IOUT=5A 5V/div VIN2 5V/div IIN2 2A/div VIN1 5V/div 10ms/div 2-Redudant Input Supplies Switchover

Specifications are subject to change without notice. failure, recommend to bypass AVOUT to GND with 1µF ceramic capacitor to form RC hold-up circuit as shown in Figure 2. Figure 2. Protect A OUT Collapse from Input Short with Large Parasitic Inductance

24 V5 APower OR Circuit

2 CIN1, CIN2 1µF Ceramic Capacitor, 10V , X5R 0603

1 CO1,CO3 1µF Ceramic Capacitor, 10V , X5R 0603

1 CO2 NC - -

1 RLOAD - System Loading -

2 U1,U2 LS2405IDD23 Very Low Forward Voltage Diode IC DFN2x3_8

Figure 2. Protect AOUT Collapse from Input Short with Large Parasitic Inductance

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS2405IDD23 24V, 5A Very Low Forward Voltage Diode Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Average ramp up rate (Tsmin toTP) 1~2°C/second, 3°C/ second max. Preheat & Soak - T emperature Min (Ts(min)) 150°C - T emperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 120 secs Time maintained above - T emperature(TL) 217°C - Time(tL) 60~150 seconds Peak T emperature (TP) See Classification Temp intable1 Time within 5°C of actual peak T emperature (tp) 30 seconds max Ramp-down Rate 6°C/second max Time 25°C to peak T emperature (TP) 8 minutes Max. Soldering Parameters Note 1: Tolerance for peak profile Temperature(TP) is defined as a supplier minimum and a user maximum. Note 2:Tolerance for time at peak profile temperature (tP)is defined as a supplier minimum and a user maximum. Part Number Package Min. Order Qty. LS2405IDD23 DFN2x3_8 3000/Tape & Reel

Ordering Information

YWAB Y: Year Code W: Weekly Code A: Assembly Code B: Lot code 24 05 ID D23 Current 05:5A Ideal Diode Oring Package Type DFN2x3_8Operation Voltage 24:24V Littelfuse LS Part Numbering Part Marking

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS2405IDD23 24V, 5A Very Low Forward Voltage Diode Dimension Millimeters Inches Min Max Min Max A 0.70 0.80 0.028 0.031 A1 0.00 0.05 0.000 0.002 b 0.20 0.30 0.008 0.012 D 1 .90 2.10 0.075 0.083 D1 1 .35 1 .60 0.053 0.063 E 2.90 3.10 0.114 0.122 E1 1 .25 1 .60 0.049 0.063 e 0.50 0.020 L 0.22 0.40 0.009 0.016 Dimensions — DFN2x3_8 Detail A Thermal Pad Option Detail A A B C D Feedingd irection Symbol Millimeters A 4.0 B 1. 5 C 8.0 D 4.0 E 7 inch F 9.0 Carrier Tape & Reel Specification — DFN2x3_8 Product Disclaimer - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life- saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities. https://www.littelfuse.com/legal/disclaimers/product-disclaimer.aspx