LS101A_15 VISHAY | Alldatasheet

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Technical content

LS101A, LS101B, LS101C www.vishay.com Vishay Semiconductors Rev. 1.6, 09-May-12 1 Document Number: 85628 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diodes MECHANICAL DATA Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box

FEATURES

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • AEC-Q101 qualified
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks PARTS TABLE PART TYPE DIFFERENTATION ORDERING CODE INTERNAL CONSTRUCTION REMARKS LS101A V R = 60 V, VF at IF = 1 mA max. 410 mV LS101A-GS18 or LS101A-GS08 Single diode Tape and reel LS101B V R = 50 V, VF at IF = 1 mA max. 400 mV LS101B-GS18 or LS101B-GS08 Single diode Tape and reel LS101C V R = 40 V, VF at IF = 1 mA max. 390 mV LS101C-GS18 or LS101C-GS08 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage LS101A V R 60 V LS101B V R 50 V LS101C V R 40 V Peak forward surge current t p = 10 μs I FSM 2A Repetitive peak forward current I FRM 150 mA Forward continuous current I F 30 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm R thJA 320 K/W Junction temperature T j 125 °C Storage temperature range T stg - 65 to + 150 °C

LS101A, LS101B, LS101C www.vishay.com Vishay Semiconductors Rev. 1.6, 09-May-12 2 Document Number: 85628 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Current vs. Reverse Voltage Fig. 2 - Diode Capacitance vs. Reverse Voltage Fig. 3 - Forward Current vs. Forward Voltage ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I R = 10 μA LS101A V (BR) 60 V LS101B V (BR) 50 V LS101C V (BR) 40 V Leakage current VR = 50 V LS101A I R 200 nA VR = 40 V LS101B I R 200 nA VR = 30 V LS101C I R 200 nA Forward voltage drop IF = 1 mA LS101A V F 410 mV LS101B V F 400 mV LS101C V F 390 mV IF = 15 mA LS101A V F 1000 mV LS101B V F 950 mV LS101C V F 900 mV Diode capacitance V R = 0 V, f = 1 MHz LS101A C D 2p F LS101B C D 2.1 pF LS101C C D 2.2 pF IR - Reverse Current (μA) 0.01 0.1 100 0 1 01 52 02 53 03 54 04 55 0 VR - Reverse Voltage (V)16204 Tj = 125 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C Tj = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 01 52 02 53 03 54 04 55 0 VR - Reverse Voltage (V)16205 CD - Diode Capacitance (pF) Tj = 25 °C 0.01 0.10 1.00 10.00 IF - Forward Current (mA) VF - Forward Voltage (V)16206

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