IRLR024N IRF | Alldatasheet
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HEXFET ® Power MOSFET S D G Parameter Typ. Max. Units R θJC Junction-to-Case ––– 3.3 R θJA Case-to-Ambient (PCB mount)** ––– 50 °C/W R θJA Junction-to-Ambient ––– 110 Thermal Resistance VDSS = 55V R DS(on) = 0.065Ω ID = 17A
Description
www.irf.com 1 l Logic-Level Gate Drive l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 72 PD @T C = 25°C Power Dissipation 45 W Linear Derating Factor 0.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings PD- 91363E D-Pak I-Pak IRLR024N IRLU024N IRLR024N IRLU024N
2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns T J = 25°C, IF = 11A Q rr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A VDD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω , IAS = 11A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width ≤ 300µs; duty cycle ≤ 2%. Uses IRLZ24N data and test conditions. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C Notes: Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S V DS = 25V, ID = 11A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 V DS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V Q g Total Gate Charge ––– ––– 15 I D = 11A Q gs Gate-to-Source Charge ––– ––– 3.7 nC V DS = 44V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 V GS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.1 ––– V DD = 28V tr Rise Time ––– 74 ––– ns ID = 11A td(off) Turn-Off Delay Time ––– 20 ––– R G = 12Ω, VGS = 5.0V tf Fall Time ––– 29 ––– R D = 2.4Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 480 ––– V GS = 0V C oss Output Capacitance ––– 130 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V )DS A 20µ s PULSE WIDTH T = 25°CJ VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 0.1 100 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V )DS A 20µ s PULSE W IDTH T = 175°C VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V J 0.1 100 23456789 1 0 T = 25°CJ GSV , Gate-to-Source Voltage (V ) DI , Drain-to-Source Current (A) T = 175°CJ A V = 15V 20µs PULSE W IDTH DS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 JT , Junction Temperature (°C) R , Drain-to-Source O n ResistanceDS(on) (Normalized) V = 10V GS A I = 18AD 17 A
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 200 400 600 800 1 10 100 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V ) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 0 4 8 12 16 20 Q , Total Gate Charge (nC )G V , Gate-to-Source Voltage (V)GS A FOR TEST CIRCUIT SEE FIGURE 13 V = 44V V = 28V I = 11A DS DS D 100 T = 25°CJ V = 0V GS V , Source-to-Drain Voltage (V ) I , Reverse Drain Current (A) SD SD A T = 175°CJ 100 1000 1 10 100 V , Drain-to-Source Voltage (V )DS I , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R D DS(on) 10µs 100µs 1ms 10ms A T = 25°C T = 175°C Sin gle Pulse C J
www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1 t , Rectangular Pulse Duration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SING LE PULSE (THERMAL RESPONSE) A Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C 25 50 75 100 125 150 175 T , Case Temperature( C) I , Drain Current (A) D
6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0. 01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V 100 120 140 25 50 75 100 125 150 175 J E , Single Pulse Avalanche Energy (mJ)AS A Starting T , Junction Temperature (°C ) V = 25V I TOP 4.5A 7.8A BOTTOM 11A DD D
www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFET ® MOSFET s * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD
- dv/dt controlled by RG
- Driver same type as D.U.T.
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer
8 www.irf.com D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information 6.73 (.265) 6.35 (.250) - A - 1 2 3 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 4.57 (.180) 2.28 (.090) 2X 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LEAD ASSI GNMENTS 1 - G A TE 2 - D R A IN 3 - S O U R CE 4 - D R A IN 10.42 (.410) 9.40 (.370) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLI NG DI MENSI ON : I NCH. 3 C O N FO R MS TO JE D E C O U TLIN E TO -252AA .
4 DI MENSI ONS SHOW N ARE BEFORE SOLDER DI P,
SOLDER DIP MAX. +0.16 (.006).
www.irf.com 9 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information 6.73 (.265) 6.35 (.250) - A - 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2. 38 (.094) 2. 19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) LEAD ASSI GNMENTS 1 - G A TE 2 - D R AIN 3 - S O UR C E 4 - D R AIN NOTES: 1 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14. 5M, 1982. 2 CO N TRO LLIN G DIME NSIO N : INC H . 3 CO N FO R MS TO JED EC O U TLIN E TO-252AA .
4 DIMENSI ONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
10 www.irf.com WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 2/10 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION FEED DI RECTI ON 16.3 ( .641 ) 15.7 ( .619 ) TRR TRL NOTES : 1. CONTROLLI NG DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MI LLI METERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OU TLINE CONFO RMS TO EIA-481. 16 mm