AUIRLR024N INFINEON | Alldatasheet
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Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 1 2015-10-29 HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com AUTOMOTIVE GRADE Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 17 A ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 12 IDM Pulsed Drain Current 72 PD @TC = 25°C Maximum Power Dissipation 45 W Linear Derating Factor 0.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy (Thermally Limited) 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 3.3 °C/W RJA Junction-to-Ambient ( PCB Mount) ––– 50 RJA Junction-to-Ambient ––– 110 D-Pak AUIRLR024N I-Pak AUIRLU024N Base part number Package Type Standard Pack Form Quantity AUIRLU024N I-Pak Tube 75 AUIRLU024N AUIRLR024N D-Pak Tube 75 AUIRLR024N Tape and Reel Left 3000 AUIRLR024NTRL Orderable Part Number G D S Gate Drain Source G S D D S G D HEXFET® Power MOSFET
Notes: Repetitive rati ng; pulse width limited by max. junction temperature. (See fig. 11) V DD = 25V, starting TJ = 25°C, L = 790µH, RG = 25, IAS = 11A, VGS =10V. (See Fig.12) I SD 11A, di/dt 290A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRFZ24N data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material). Fo r recommended footprint and soldering techniques refer to application note #AN-994 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, I D = 1mA RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = VGS, ID = 250µA gfs Forward Trans conductance 8.3 ––– ––– S V DS = 25V, ID = 11A IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55 V, VGS = 0V ––– ––– 250 V DS = 44V,VGS = 0V,TJ =150°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– ––– 15 nC ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 V DS = 44V Qgd Gate-to-Drain Charge ––– ––– 8.5 VGS = 5.0V, See Fig 6 and 13 td(on) Turn-On Delay Time ––– 7.1 ––– ns VDD = 28V tr Rise Time ––– 74 ––– ID = 11A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12VGS = 5.0V LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact C iss Input Capacitance ––– 480 ––– pF VGS = 0V Coss Output Capacitance ––– 130 ––– V DS = 25V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 17 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 72 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C,IS = 11A,VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C ,IF = 11A Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Fig. 2 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature Fig. 1 Typical Output Characteristics 0.1 100 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 25°CJ VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 0.1 100 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 175°C VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V J 0.1 100 23456789 1 0 T = 25°CJ GSV , Gate-to-Source Voltage (V) DI , Drain-to-Source Current (A) T = 175°CJ A V = 15V 20µs PULSE WIDTH DS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 JT , Junction Temperature (°C) R , Drain-to-Source On ResistanceDS(on) (Normalized) V = 10V GS A I = 18AD
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig. 7 Typical Source-to-Drain Diode Forward Voltage 200 400 600 800 11 0 1 00 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 048 1 2 1 6 2 0 Q , Total Gate Charge (nC)G V , Gate-to-Source Voltage (V)GS A FOR TEST CIRCUIT SEE FIGURE 13 V = 44V V = 28V I = 11A DS DS D 100 T = 25°CJ V = 0V GS V , Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD A T = 175°CJ 100 1000 1 10 100 V , Drain-to-Source Voltage (V)DS I , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R D DS(on) 10µs 100µs 1ms 10ms A T = 25°C T = 175°C Single Pulse C J
Fig 10a. Switching Time Test Circuit Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms 25 50 75 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) D 0.01 0.1 t , Rectangular Pulse Duration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) A Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C
Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms RG IAS 0.01tp D.U.T LVDS - VDD DRIVER A 15V 20V tp V(BR)DSS IAS Fig 13b. Gate Charge Test Circuit Fig 13a. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr 100 120 140 25 50 75 100 125 150 175 J E , Single Pulse Avalanche Energy (mJ)AS A Starting T , Junction Temperature (°C) V = 25V I TOP 4.5A 7.8A BOTTOM 11A DD D
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) YWWA XX XX Date Code Y= Year WW= Work Week AURLR024N Lot Code Part Number IR Logo D-Pak (TO-252AA) Part Marking Information
I-Pak (TO-251AA) Part Marking Information YWWA XX XX Date Code Y= Year WW= Work Week AURLU024N Lot Code Part Number IR Logo I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) TRR TRL NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. 16 mm
13 INCH
(per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak ESD Machine Model Class M2 (+/- 150V)† AEC-Q101-002 Human Body Model Class H1A (+/- 500V)† AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V)† AEC-Q101-005 RoHS Compliant Yes Moisture Sensitivity Level Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain danger ous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly appr oved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technolog ies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
10/29/2015 Updated datasheet with corporate template Corrected ordering table on page 1. † Highest passing voltage.