LPV531MK/NOPB

LPV531 Programmable Micropower CMOS Input, Rail-to-Rail Output Op Amp (Rev. B)

Document overview

• Manufacturer or author: Texas Instruments, Incorporated [SNOSAK5,B]
• PDF pages: 27

Technical content

www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 LPV531ProgrammableMicropowerCMOS Input,Rail-to-RailOutputOperationalAmplifier Check forSamples: LPV531 1FEATURES DESCRIPTION 2• (Typical5V Supply,unlessotherwiseNoted.) The LPV531 is an extremelyversatileoperational

• Supply Voltage2.7Vto5.5V amplifier.A singleexternalresistorgivesthesystem designerthe abilityto definethe quiescentcurrent,• Dynamic Power Mode Setting gain bandwidth product and output short circuit• ContinuouslyProgrammable Supply Current current.This innovativefeaturegives the system– Range 5 μA to425 μA designera method to dynamicallyswitchthe power
• ContinuouslyProgrammable Bandwidth leveltooptimizetheperformanceoftheop amp and meet thesystemdesignrequirements.– Range 73 kHz to4.6MHz The LPV531 can be tailoredto a wide varietyof• InputCommon Mode VoltageRange −0.3Vto applications.Itoffersthe system designerthe ability3.8V todynamicallytradeoffsupplycurrentforbandwidth• CMRR 95 dB by adjustingthecurrentdrawn fromtheISEL pinusing
• Rail-to-RailOutput VoltageSwing a DAC or switchingin differentvalue resistorsin serieswiththe ISEL pin.The LPV531 iscapableof• InputOffsetVoltage1 mV operatingfrom 73 kHz, consuming only5 μA, to as fastas 4.6 MHz, consuming only425 μA. The inputAPPLICATIONS offsetvoltageisrelativelyindependentand therefore• AC Coupled Circuits isnotsignificantlyaffectedby thechosen power level.
• PortableInstrumentation Utilizinga CMOS inputstage,the LPV531 achieves
• ActiveFilters an inputbiascurrentof 50 fA and a common mode inputvoltagewhich extendsfrom thenegativerailto TypicalApplication within1.2V ofthepositivesupply.The LPV531's rail- to-railclassAB outputstageenablesthisop amp to offermaximum dynamicrangeatlowsupplyvoltage. Offeredinthespace saving6-pinSOT package,the LPV531 isidealforuse inhandheldelectronicsand portableapplications.The LPV531 is manufactured usingTI’s advanced VIP50 process. A fixedsupply current/gainbandwidth is available upon request. Figure1. AC Coupled Application Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2006–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings (1)(2) ESD Tolerance(3) Human Body Model 2000V Machine Model 200V VIN Differential ±2V SupplyVoltage(V+ -V−) 6V StorageTemperatureRange −65°C to+150°C JunctionTemperature(4) +150°C SolderingInformation InfraredorConvection(20sec) 235°C Wave SolderingLead Temp. (10sec) 260°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristicsTables. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Human Body Model is1.5kΩ inserieswith100 pF.Machine Model is0Ω inserieswith200 pF. (4) Typicalvaluesrepresentthemost likelyparametricnorm. OperatingRatings (1) OperatingTemperatureRange −40°C to+85°C SupplyVoltage(V+ – V−) 2.7Vto5.5V Package ThermalResistance(θJA ) (2) 6-PinSOT 171°C/W (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristicsTables. (2) The maximum power dissipationisa functionofTJ(MAX),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA .Allnumbers applyforpackagessoldereddirectlyontoa PC board.

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www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 5V FullPower Mode ElectricalCharacteristics Unlessotherwisespecified,alllimitsareensuredforTJ = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,ISEL pinconnectedtoV−, R L = 100 kΩ.Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units VOS InputOffsetVoltage ±1 ±4.5 mV±5 ΔVOS InputOffsetVoltageDifference (VOS inFullPower Mode) − ±0.1 ±2 mV(VOS inLow Power Mode) TC VOS InputOffsetAverageDrift (3) ±2 μV/°C IB InputBiasCurrent (4) .05 ±10 pA ±100 CMRR Common Mode RejectionRatio VCM Steppedfrom0V to3.5V 72 95 dB68 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5.5V 74 90 dBVCM = 1V 70 CMVR InputCommon Mode Voltage CMRR ≥ 50 dB −0.3 3.8 VRange AVOL LargeSignalVoltageGain VO = 0.5Vto4.5V 87 96 R L = 1 kΩ toV+/2 84 VO = 0.5Vto4.5V 104 114 dBR L = 10 kΩ toV+/2 100 VO = 0.5Vto4.5V 108 128 R L = 100 kΩ,toV+/2 104 VO OutputSwing High R L = 1 kΩ toV+/2 120 180 195 R L = 10 kΩ toV+/2 55 80 mV from 85 V+ R L = 100 kΩ toV+/2 30 50 OutputSwing Low R L = 1 kΩ toV+/2 160 210 230 R L = 10 kΩ toV+/2 105 120 mV135 R L = 100 kΩ toV+/2 95 120 135 ISC OutputShortCircuitCurrent(5) Sourcing,VO = 2.5V −15 −8 VID = 100 mV −3 mA Sinking,VO = 2.5V 13 24 VID = −100 mV 10 IS SupplyCurrent 425 530 μA650 SR Slew Rate (6) AV = +1,VIN = 0.5Vto3.5V 1.55 2.5 V/μsC L = 15 pF 1 GBW Gain BandwidthProduct C L = 20 pF 4.6 MHz en Input-ReferredVoltageNoise f= 100 kHz 20 nV/√Hz f= 1 kHz 28 in Input-ReferredCurrentNoise f= 1 kHz 6 fA/√Hz (1) Alllimitsarespecifiedby testingorstatisticalanalysis. (2) Typicalvaluesrepresentthemost likelyparametricnorm. (3) Offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (4) Specifiedby design. (5) Continuousshortcircuitoperationatelevatedambienttemperaturecan resultinexceedingthemaximum allowedjunctiontemperature of150°C. (6) Slew rateisthesloweroftherisingorfallingslewrates. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LPV531

SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com 5V Mid-Power Mode ElectricalCharacteristics Unlessotherwisespecified,alllimitsareensuredforTJ = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,ISEL pinconnectedtoV− through100 kΩ resistor,R L = 100 kΩ.Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units VOS InputOffsetVoltage ±1 ±4.5 mV±5 ΔVOS InputOffsetVoltageDifference (VOS inFullPower Mode) − ±0.1 ±2 mV(VOS inLow Power Mode) TC VOS InputOffsetAverageDrift (3) ±2 μV/°C IB InputBiasCurrent (4) .05 ±10 pA ±100 CMRR Common Mode RejectionRatio VCM Steppedfrom0V to3.5V 72 92 dB68 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5.5V 72 88 dB68 CMVR InputCommon Mode Voltage CMRR ≥ 50 dB −0.3 3.8 VRange AVOL LargeSignalVoltageGain VO = 0.5Vto4.5V 86 96 R L = 10 kΩ toV+/2 82 dB VO = 0.5Vto4.5V 100 114 R L = 100 kΩ toV+/2 98 VO OutputSwing High R L = 10 kΩ toV+/2 115 160 175 mV from R L = 100 kΩ toV+/2 65 110 120 OutputSwing Low R L = 10 kΩ toV+/2 150 165 180 mV R L = 100 kΩ toV+/2 105 120 135 ISC OutputShortCircuitCurrent Sourcing,VO = 2.5V −4 −1.5 (5) VID = 100 mV −1 mA Sinking,VO = 2.5V 1.5 4 VID = −100 mV 1 IS SupplyCurrent 42 55 μA62 SR Slew Rate (6) AV = +1,VIN = 0.5Vto3.5V 180 250 V/ms100 GBW Gain BandwidthProduct C L = 20 pF 625 kHz en Input-ReferredVoltageNoise f= 100 kHz 55 nV/√Hz f= 1 kHz 60 in Input-ReferredCurrentNoise f= 1 kHz 6 fA/√Hz (1) Alllimitsarespecifiedby testingorstatisticalanalysis. (2) Typicalvaluesrepresentthemost likelyparametricnorm. (3) Offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (4) Specifiedby design. (5) Continuousshortcircuitoperationatelevatedambienttemperaturecan resultinexceedingthemaximum allowedjunctiontemperature of150°C. (6) Slew rateisthesloweroftherisingorfallingslewrates.

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www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 5V Low Power Mode ElectricalCharacteristics Unlessotherwisespecified,alllimitsareensuredforTJ = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,ISEL connectedtoV− through1 M Ω resistor,R L = 100 kΩ.Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units VOS InputOffsetVoltage ±1 ±4.5 mV±5 ΔVOS InputOffsetVoltageDifference (VOS inFullPower Mode) − ±0.1 ±2 mV(VOS inLow Power Mode) TC VOS InputOffsetAverageDrift (3) ±2 μV/°C IB InputBiasCurrent (4) .05 ±10 pA ±100 CMRR Common Mode RejectionRatio VCM Steppedfrom0V to3.5V 72 90 dB68 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5.5V 72 85 dB68 CMVR InputCommon-Mode Voltage CMRR ≥ 50 dB −0.3 3.8 VRange AVOL LargeSignalVoltageGain VO = 0.5Vto4.5V 90 R L = 10 kΩ toV+/2 dB VO = 0.5Vto4.5V 80 100 R L = 100 kΩ toV+/2 78 VO OutputSwing High R L = 10 kΩ toV+/2 175 400 1600 mV from R L = 100 kΩ toV+/2 115 200 230 OutputSwing Low R L = 10 kΩ toV+/2 250 1200 1800 mV R L = 100 kΩ toV+/2 150 165 180 ISC OutputShortCircuitCurrent Sourcing,VO = 2.5V −400 −100 (5) VID = 100 mV −35 µA Sinking,VO = 2.5V 80 300 VID = −100 mV 35 IS SupplyCurrent 5 7 μA8 SR Slew Rate (6) AV = +1,VIN = 0.5Vto3.5V 10 28 V/ms8 GBW Gain BandwidthProduct C L = 20 pF 73 kHz en Input-ReferredVoltageNoise f= 1 kHz 200 nV/√Hz in Input-ReferredCurrentNoise f= 1 kHz 60 fA/√Hz (1) Alllimitsarespecifiedby testingorstatisticalanalysis. (2) Typicalvaluesrepresentthemost likelyparametricnorm. (3) Offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (4) Specifiedby design. (5) Continuousshortcircuitoperationatelevatedambienttemperaturecan resultinexceedingthemaximum allowedjunctiontemperature of150°C. (6) Slew rateisthesloweroftherisingorfallingslewrates. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LPV531

+ - LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com Power SelectElectricalCharacteristics Unlessotherwisespecified,alllimitsareensuredforTJ = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,R L = 100 kΩ.Boldface limitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units tLF Time fromLow Power Mode to 210 ns FullPower Mode tFL Time fromFullPower Mode to 500 ns Low Power Mode VREXT Voltage@ ISEL Pin ISEL PinLeftOpen 100 110 125 mV R INT 9 11 14.5 kΩ (1) Alllimitsarespecifiedby testingorstatisticalanalysis. (2) Typicalvaluesrepresentthemost likelyparametricnorm. Connection Diagram Figure2. 6-PinSOT – Top View See Package Number DDC

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85° C SUPPLY CURRENT ( PA) SUPPLY VOLTAGE (V) 25° C -40° C 120 100 10k 1M 100M FREQUENCY (Hz) -20 GAIN (dB) 10M100k1k 100 135 -23 113 PHASE (° )PHASE GAIN R L = 100 k: C L = 20 pF V+ = 5V 85° C 250 300 350 400 450 500 550 SUPPLY CURRENT ( PA) SUPPLY VOLTAGE (V) 25° C -40° C 85° C SUPPLY CURRENT ( PA) SUPPLY VOLTAGE (V) 25° C -40° C ISEL (PA) 100 200 300 400 500 600 SUPPLY CURRENT ( PA) -40° C 85° C 25° C -0.1 -1 -10 ISEL (PA) 100 1000 SUPPLY CURRENT ( PA) -40° C 85° C 25° C LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 TypicalPerformance Characteristics Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. Supply Current Supply Current vs. vs. ISEL ISEL Figure3. Figure4. Supply Current Supply Current vs. vs. Supply Voltage Supply Voltage (FullPower Mode) (MidPower Mode) Figure5. Figure6. Supply Current Gain and Phase vs. vs. Supply Voltage Frequency (Low Power Mode) (FullPower Mode) Figure7. Figure8. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LPV531

VCM (V) -1.5 -0.5 0.5 1.5 VOS (mV) DEVICE A @ -40° C DEVICE B @ 85° C DEVICE B @ 25° C DEVICE A @ 25° C DEVICE B @ -40° C DEVICE A @ 85° C 10 1k 1M FREQUENCY (Hz) 100 CMRR (dB) 100k10k100 MID POWER MODE FULL POWER MODE LOW POWER MODE 0 1 2 3 4 VCM (V) -1.5 -0.5 0.5 1.5 VOS (mV) DEVICE A @ 85° C DEVICE B @ 85° C DEVICE B @ 25° C DEVICE A @ 25° C DEVICE A @ -40° C DEVICE B @ -40° C 0 1 2 3 4 VCM (V) -1.5 -0.5 0.5 1.5 VOS (mV) DEVICE A @ 85° C DEVICE B @ 85° CDEVICE B @ 25° C DEVICE A @ 25° C DEVICE A @ -40° C DEVICE B @ -40° C 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 GAIN (dB) -23 113 135 PHASE (° ) 10M R L = 100 k: C L = 20 pF V+ = 5V PHASE GAIN 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 GAIN (dB) -23 113 135 PHASE (° ) R L = 100 k: C L = 20 pF V+ = 5V GAIN PHASE LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. Gain and Phase Gain and Phase vs. vs. Frequency Frequency (MidPower Mode) (Low Power Mode) Figure9. Figure10. InputOffsetVoltage InputOffsetVoltage vs. vs. Common Mode Voltage Common Mode Voltage (FullPower Mode) (MidPower Mode) Figure11. Figure12. InputOffsetVoltage vs. CMRR Common Mode Voltage vs. (Low Power Mode) Frequency Figure13. Figure14.

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(50 mV /DIV TIME (10 Ps/DIV) OUTPUT INPUT (50 mV /DIV TIME (100 Ps/DIV) OUTPUT INPUT 10 1k 1M FREQUENCY (Hz) 100 PSRR (dB) 100k10k100 +PSRR -PSRR (50 mV/DIV) TIME (10 Ps/DIV) OUTPUT INPUT 10 1k 1M FREQUENCY (Hz) 100 PSRR (dB) 100k10k100 -PSRR +PSRR 10 1k 1M FREQUENCY (Hz) 100 PSRR (dB) 100k10k100 -PSRR +PSRR LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. PSRR PSRR vs. vs. Frequency Frequency (FullPower Mode) (MidPower Mode) Figure15. Figure16. PSRR vs. Frequency Small SignalNon-InvertingResponse (Low Power Mode) (FullPower Mode) Figure17. Figure18. Small SignalNon-InvertingResponse Small SignalNon-InvertingResponse (MidPower Mode) (Low Power Mode) Figure19. Figure20. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LPV531

(50 mV /DIV TIME (10 Ps/DIV) OUTPUT INPUT (50 mV /DIV TIME (100 Ps/DIV) OUTPUT INPUT (2 V/DIV TIME (100 Ps/DIV) OUTPUT INPUT (50 mV/DIV) TIME (10 Ps/DIV) OUTPUT INPUT V/DIV) TIME (10 Ps/DIV) OUTPUT INPUT (2 V/DIV TIME (10 Ps/DIV) OUTPUT INPUT LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. Large SignalNon-InvertingResponse Large SignalNon-InvertingResponse (FullPower Mode) (MidPower Mode) Figure21. Figure22. Large SignalNon-InvertingResponse Small SignalInvertingPulse Response (Low Power Mode) (FullPower Mode) Figure23. Figure24. Small SignalInvertingPulse Response Small SignalInvertingPulse Response (MidPower Mode) (Low Power Mode) Figure25. Figure26.

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-10 -8 -6 -4 -2 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 GAIN BANDWIDTH PRODUCT (kHz) ISEL CURRENT ( PA) 1 10 100 1000 SUPPLY CURRENT ( PA) 0.1 100 ISOURCE (mA) 85° C 25° C -40° C 1 10 100 1000 SUPPLY CURRENT ( PA) 0.1 100 ISINK (mA) 85° C 25° C -40° C (2 V/DIV TIME (100 Ps/DIV) OUTPUT INPUT (2 V/DIV TIME (10 Ps/DIV) OUTPUT INPUT (2 V/DIV TIME (10 Ps/DIV) OUTPUT INPUT LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. Large SignalInvertingResponse Large SignalInvertingResponse (FullPower Mode) (MidPower Mode) Figure27. Figure28. ISINK Large SignalInvertingResponse vs. (Low Power Mode) Supply Current Figure29. Figure30. ISOURCE Gain Bandwidth Product vs. vs. Supply Current ISEL Figure31. Figure32. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LPV531

FREQUENCY (Hz) 100 1000 LOW POWER MODE MID POWER MODE FULL POWER MODE VOLTAGE NOISE (nV/ Hz) 10 100 1000 CAPACITIVE LOAD (pF) PHASE MARGIN (° ) LOW POWER MODE FULL POWER MODE MID POWER MODE R L=100 k: LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Unlessotherwisespecified,V+ = 5V,TJ = 25°C. ForFullPower Mode theISEL pinisconnectedtoV−;forMid-PowerMode the ISEL pinisconnectedtoV− througha 100 kΩ resistor;forLow Power Mode theISEL pinisconnectedtoV− througha 1 M Ω resistor. InputReferredVoltageNoise Phase Margin vs. vs. Frequency CapacitiveLoad Figure33. Figure34.

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+IN -IN BIAS ISEL LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013

APPLICATION INFORMATION

The LPV531 isan extremelyversatileoperationalamplifierbecause performanceand power consumptioncan be adjustedduringoperation.Thisprovidesa method todynamicallyoptimizethesupplycurrent,thebandwidthand theoutputshortcircuitcurrentintheapplication.The power levelcan be setby thecurrentdrawn fromtheISEL pinaccordingtotheapplicationperformancerequirements. CIRCUIT TOPOLOGY As shown inFigure35, the LPV531 containstwo internalbiasreferencegeneratorsthatdelivera reference current(IREF ) to the amplifiercore.The programmable biasgeneratorgeneratesa 110 mV referencevoltage (VINT).Thisreferencevoltageisconvertedintoa programmable referencecurrent(IPROG ) throughthe internal resistor(RINT) and theexternalresistor(REXT ) connectedtotheISEL pin.Internally,IPROG isadded totheoutput currentfromthelowpower biasgenerator(ISTDB ).When theISEL pinisleftfloating,IPROG equalszeroand theIREF equalsISTDB .The valueofISTDB issuch thatinthismode thepower supplycurrentisbelow 1 µA. Inthis1 µA power mode, theLPV531 isfunctionalbutperformanceoverthefulltemperaturerangeisnotensured.The 1 µA power mode operationisonlyrecommended forapplicationswitha temperaturerangebetween 0 and 70°C. Figure35. SimplifiedSchematic POWER MODE CONTROL To illustratetypicalconfigurationsthreepossiblesolutionstocontrolthepower mode(s) oftheLPV531 willbe described. SinglePower Mode Ifthe applicationrequiresone singlepower mode forthe LPV531, then the easiestway to achievethisisto connecta resistor(REXT ) from the ISEL pinto V−. Togetherwiththe internalcircuitry,R EXT willdeterminethe currentdrawn from the ISEL pin.Internallythe ISEL pinisconnectedto an 11 kΩ internalseriesresistor(RINT) whichisbiasedatVINT = 110 mV. Thissetup isillustratedinFigure36. For a desiredsupplycurrent,bandwidth,shortcircuitcurrent,orloadresistance,therequiredvalueofR EXT can be calculatedusingtheequationsinthesection“DETERMINING THE ISEL LEVELS ”. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LPV531

R EXT = 1 M: LOW POWER MODE R EXT = 100 k: MID POWER MODE R EXT = 0: HIGH POWER MODE VOUTLPV531 ISEL IN VINT = 110 mV R INT = 11 k: 6 V+ 2 V-

1 OUT

5 ISEL

SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com Figure36. SinglePower Mode Switched DiscretePower Modes Inthistypicalapplication,theLPV531 can operateattwo (ormore) power modes inordertofulfillthedemands ofthedesign.One ofthemodes isused tosave power.Itisa low power mode which issetby usinga large resistor.The othersare the higherpower modes which are setby one or more smallerresistors.The larger resistorthatsets the low power mode can be permanentlyconnected whilethe smallerresistor(s)can be switchedinparallelto setthe highpower mode(s).Thisconfigurationallowsthe designerto get the required performancefromtheLPV531 when needed. Figure37. Power Modes Set by Resistorsand Switches The switchesshown inFigure37 can be easilyimplementedwithan open drainI/Oportofan ASIC orany other simplepulldown switch. DAC ControlledPower Modes For voltagecontrolledfilterapplications,where controlofthegainbandwidthisessential,a DAC and a resistive voltagedividercan be used.Inthisapplicationthecurrentdrawn fromtheISEL piniscontrolledby theDAC. The DAC ’s totaloutputrangeisdividedtomatch theV− toVINT voltagewhichhas therangeof0-110mV.

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or R EXT = -11 k:35V ISCISC = 35V R EXT + 11 k: or R EXT = -11 k:50[GHz · :] GBW - 11 kHzGBW = 11 kHz + 50[GHz · :] R EXT + 11 k: R EXT = 40 x 110 mV PSI ± 1 PA -11 k: PSI = 1 PA + 40 x +R EXT 11k 110 mV ISEL VOUTLPV531 VCONTROL R EXT2 R EXT1 DAC IN LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 Figure38. DAC ControlledPower Mode Configurations The outputoftheresistivevoltagedividershouldhave an impedance thatissmallcompared tothevalueofR INT toallowa linearcontrolofthepower level.Therefore,R EXT2 needs tohave a valueintheorderofR INT/10and R EXT1 = 125 mV * R EXT2 /VCONTROL,MAX . For 1 µA power mode operation,theseresistorvalueswilldividethe maximum voltageofVCONTROL to125 mV. DETERMINING THE R EXT VALUES AND ISEL LEVELS To determinethevalueofR EXT thatisneeded fora certainsupplycurrentorbandwidth,thefollowingequations can be used: (1) or (2) (3) For thepower modes characterizedinthisdatasheet,theseformulasleadtothevaluesinTable1.These values deviateslightlyfrom thetypicalvaluespresentedintheElectricalCharacteristicstables.The valuesinTable1 are calculatedusingapproximatedlinearequationswhilethevaluesintheElectricalCharacteristicstablesare theresultofcharacterizationmeasurement procedures. Table1. Values forCharacterizedPower Modes R EXT ISEL Supply Current Gain Bandwidth Product 1Ω 9 µA 400 µA 4.6MHz 100 kΩ 0.9µA 40 µA 460 kHz 1 M Ω 99 nA 5.3µA 60 kHz To calculatetheR EXT which willallowtheLPV531 todelivera minimum outputcurrentatalltimesand overall temperatures,use thefollowingequations: (4) Iftheoutputhas tobe keptatV+/2fora known loadresistance,therequiredR EXT can be calculatedwiththe followingequations: Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LPV531

or R EXT = -11 k:0.07 R LOAD,MIN R LOAD,MIN = 0.07 R EXT + 11 k: LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com (5) Forthecharacterizedpower modes theseequationsleadtotheminimum valuesinTable2 below. Table2. Minimum Values forCharacterizedPower Modes R EXT ISEL ISC R LOAD 1Ω 9 µA 3 mA 770Ω 100 kΩ 0.9µA 300 µA 7.8kΩ 1 M Ω 99 nA 55 µA 70.8kΩ The smallestloadresistorthattheLPV531 can drivewhen inlow power mode is70.8kΩ,as shown inTable2. When drivingsmallerloads,such as the 10 kΩ load resistorused in the ElectricalCharacteristicstables specification,theoutputswinginthelow power mode islimited.Iftheapplicationrequiresa 10 kΩ loadthenitis notrecommended touse theLPV531 inlowpower mode. ISEL SENSITIVITY The ISEL pinisa currentreferencethatdirectlyaffectstheentireinternalbiascondition.Therefore,theISEL pinis verysensitivetoparasiticsignalcoupling.InordertoprotecttheISEL pinfromunwanted distortion,itisimportant toroutethePCB layoutsuch thatthereisas littlecouplingbetween theISEL pinand theoutputor othersignal tracesas possible. TypicalApplication AC COUPLED CIRCUITS The programmable power mode makes theLPV531 idealforAC coupledcircuitswhere thecircuitneeds tobe kept activeto maintaina quiescentcharge on the couplingcapacitorswith minimal power consumption. Figure39 shows theschematicofan invertingAC coupledamplifierusingtheLPV531 withtheISEL pincontrolled by I/Oportsofa microcontroller.The advantageofthelow power activemode forAC coupledamplifiersisthe eliminationofthetimeneeded tore-establisha quiescentoperatingpointwhen theamplifierisswitchedtofull power mode. When an amplifierwithouta low power activemode isused inlow power applications,thereare two ways to minimizepower consumption.The firstmethod turnsofftheamplifierby switchingoffpower totheop amp using a transistorswitch.The second method uses an amplifierwitha shutdown pin.Both ofthesemethods have the problemofallowingthecouplingcapacitors,C 1 and C 2 todischargethequiescentDC voltagestoredon them when intheshutdown state.When theamplifieristurnedon again,thequiescentDC voltagesmust reestablish themselves.Duringthistime,theamplifier’s outputisnotusablebecause theoutputsignalisa mixtureofthe amplifiedinputsignaland thechargingvoltageon thecouplingcapacitors.The settlingtimecan range from a severalmillisecondstoseveralsecondsdependingon theresistorand capacitorvalues. When the LPV531 isplacedintothe low power mode, the power consumptionisminimalbut the amplifieris activetomaintainthequiescentDC voltageon thecouplingcapacitors.The transitionback totheoperational high power mode is fast,withina few hundred nanoseconds.The activelow power mode of the LPV531 separatestwo criticalaspectsofa lowpower AC amplifierdesign.The valuesofthegainresistors,biasresistors, and couplingcapacitorscan be chosen independentlyoftheturn-onand stabilizationtime.

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gm,in/Cm gm,out/CI 40 dB/decade FREQUENCY (Hz) GAIN VIN R 1 R 2C 1 VOUT ISEL R 3 R 4 C 2 I/O PIN MICROCONTROLLER R EXT LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 Figure39. InvertingAC Coupled Application PROGRAMMABLE POWER LEVELS AND THE EFFECTS OF STABILITY COMPENSATION METHODS USING EXTERNAL COMPONENTS Insome op amp applicationcircuits,externalcapacitorsare used toimprovethestabilityofthefeedbackloop around the amplifier.When using the programmable power levelfeatureof the LPV531 such stability improvement methods may not work.This isrelatedto the internalfrequencycompensationmethod applied insidetheLPV531. Figure40 shows the bode plotof the frequencyresponse of the LPV531. The gain-bandwidthproductis determinedby the transconductanceof the inputstage(gm,in) and the internalMillercompensationcapacitor (Cm ).The non-dominantpole is formed by the transconductanceof the outputstage (gm,out) and the load capacitanceconnectedtotheoutputoftheLPV531 (Cl).The frequencyresponsecrossesthefrequencyaxiswith a single-poleslope(20dB/decade).ThisensuresthestabilityoffeedbackloopsformedaroundtheLPV531. Figure40. Bode PlotoftheFrequency Response When the loadcapacitanceisincreased,the poleat the outputwillshiftto lowerfrequencies.Eventually,the outputpolewillshiftbelow theunitygainfrequency.Thiswillcause thefrequencycharacteristictomove through the0 dB axiswitha slopeof40 dB/decadeand a feedbackloopformedaroundtheLPV531 may oscillate.The LPV531 isinternallycompensated insuch a manner thatitwillbe stableforloadcapacitancesup to100 pF. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LPV531

1 M: R ISO 1 M: C L ISEL 10 100 1000 CAPACITIVE LOAD (pF) PHASE MARGIN (° ) LOW POWER MODE FULL POWER MODE MID POWER MODE R L=100 k: LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com When the power settingof the LPV531 is reduced,both the transconductanceof the inputstage and the transconductanceoftheoutputstagewillscalelinearywiththepower leveltolowerlevels.Thismeans thatboth theunitygainfrequencyand thepoletothetransconductanceoftheoutputstageand theloadcapacitancewill move down. Because both the unitygainfrequencyand the outputpolemove down insimilaramounts,the stabilityoftheLPV531 isstillthesame. Thisisshown inFigure41 whichgivesthephase marginas a functionof theloadcapacitanceinthelow power mode (5 µA),mid-powermode (40 µA) and highpower mode (400 µA). Though thepower leveland unitygainfrequencymove withabouttwo decades,thephase marginas a function ofthecapacitiveloadishardlyaffected.Thismeans thatwhen theLPV531 isstableinan applicationcircuitwith a givenloadcapacitanceinthe highpower mode, the circuitwillremain stablewiththe same capacitiveload connectedwhen thepower levelisreduced. Figure41. Phase Margin vs.CapacitiveLoad Figure42 shows a method thatissometimes used to allowan op amp to drivelargercapacitorsthan itwas originallydesignedtodo.The capacitiveloadisisolatedfromtheoutputoftheop amp withan isolationresistor (RISO).Thismoves theoutputpole,thatwas originallylocatedatgm,out/Cl,toa higherfrequency.Thismethod requiresthatthevalueofR ISO isinthesame orderofmagnitudeas 1/gm,out.For theLPV531, thismethod willnot be effectivewhen used acrossa broadrangeofpower levels.Thisisbecause thehighpower mode willrequirea relativelysmallvalueforR ISO,whilesuch a smallR ISO willbe ineffectiveatlow power levels.Inmost applications thisshouldnotbe a problemas theLPV531 can drivesufficientcapacitiveloadswithouttheneed foran external isolationresistor. Figure42. Compensation by IsolationResistor

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+ ¨ 2C IN P1,2 = 1 R 1 R 2 r 1 R 1 R 2

4 A0C IN

-R2/R1 1 + s + s2 C IN R 2¨ §VOUT VIN (s) = A0 R1 R 1 + R 2 C IN R 1 R 2 VOUT VIN VOUT VIN R 2 R 1 AV = - = - C F LPV531 www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013 INPUT CAPACITANCE AND FEEDBACK CIRCUIT ELEMENTS The LPV531 has a verylow inputbiascurrent(50fA).To obtainthisperformancea largeCMOS inputstageis used,which adds to the inputcapacitanceof the op amp, C IN. Though thisdoes not affectthe DC and low frequencyperformance,at higherfrequenciesthe inputcapacitanceinteractswiththe inputand the feedback impedances tocreatea pole,which resultsinlowerphase marginand gainpeaking.The gainpeakingcan be reducedby carefullychoosingtheappropriatefeedbackresistor,as wellas,by usinga feedbackcapacitance, C F.For example,intheinvertingamplifiershown inFigure43,ifC IN and C F areignoredand theopen loopgain oftheop amp isconsideredinfinitethenthegainofthecircuitis−R 2/R1.An op amp, however,usuallyhas a dominant pole,which causes itsgain to drop withfrequency.Hence, thisgain isonlyvalidforDC and low frequency.To understandtheeffectoftheinputcapacitancecoupledwiththenon-idealgainoftheop amp, the circuitneeds tobe analyzedinthefrequencydomain usinga Laplacetransform. Figure43. InvertingAmplifier For simplicity,theop amp ismodeled as an idealintegratorwitha unitygainfrequencyofA0 .Hence, itstransfer function(orgain)inthefrequencydomain isA0/s.Solvingthecircuitequationsinthefrequencydomain,ignoring C F forthemoment, resultsinthefollowingequationforthegain: (6) Itcan be inferredfromthedenominatorofthetransferfunctionthatithas two poles,whose expressionscan be obtainedby solvingfortherootsofthedenominator: (7) Equation7 shows thatas thevaluesofR 1 and R 2 are increased,themagnitudeofthepolesisreduced,and hence the bandwidthof the amplifierisdecreased.Furthermore,R 1 and R 2 are relatedby the gain of the amplifier. AV = −R 2/R1,oralternatively R 2 = −AVR 1 ItisthepresenceofpairsofpolesinEquation7 thatcauses gainpeaking.Inordertoeliminatethiseffect,the polesshouldbe placedinButterworthposition,sincepolesinButterworthpositiondo notcause gainpeaking.To achievea Butterworthpair,thequantityunderthesquarerootinEquation7 shouldbe settoequal−1.Usingthis factand therelationbetween R 1 and R 2,theoptimum valueforR 1 can be found.Thisisshown inEquation8.If R 1 ischosen tobe largerthanthisoptimum value,gainpeakingwilloccur. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LPV531

(1 - AV)2 2A0AVC IN <R 1 LPV531 SNOSAK5B –MARCH 2006–REVISED MARCH 2013 www.ti.com (8) InFigure43,C F isadded tocompensate forinputcapacitanceand toincreasestability.Inaddition,C F reduceor eliminatesthegainpeakingthatcan be caused by havinga largerfeedbackresistor.

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www.ti.com SNOSAK5B –MARCH 2006–REVISED MARCH 2013

REVISION HISTORY

Changes from RevisionA (March 2013)toRevisionB Page Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LPV531

www.ti.com 7-Oct-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LPV531MK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 AV2A LPV531MKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 AV2A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LPV531MK/NOPB SOT DDC 6 1000 210.0 185.0 35.0 LPV531MKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 2

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