LPV521MG

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10 M: VOUT

10 M:10 M:

10 M: 10 M: 270 pF 270 pF 270 pF CR2032 Coin Cell 225 mAh = 5 circuits @ 9.5 yrs.

60 Hz Twin T Notch Filter

AV = 2 V/V 10 M: 270 pF VBATT VBATT = 3V o2V @ end of life Remote Sensor Signal 60 Hz To ADC Signal × 2 (No 60 Hz) LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 LPV521Nanopower,1.8V,RRIO,CMOS Input,OperationalAmplifier Check forSamples: LPV521 1FEATURES DESCRIPTION The LPV521 isa singlenanopower 552 nW amplifier 23• For VS = 5V,TypicalUnless OtherwiseNoted designedforultralonglifebatteryapplications.The– Supply CurrentatVCM = 0.3V400 nA (Max) operatingvoltagerange of1.6V to5.5V coupledwith – OperatingVoltageRange 1.6Vto5.5V typically351 nA ofsupplycurrentmake itwellsuited for RFID readers and remote sensor nanopower– Low TCV OS 3.5µV/°C (max) applications.The device has inputcommon mode– VOS 1 mV (Max) voltage0.1V over the rails,guaranteedTCV OS and – InputBias Current40 fA voltageswing to the railoutputperformance.The LPV521 has a carefullydesignedCMOS inputstage– PSRR 109 dB thatoutperformscompetitorswithtypically40 fA IBIAS– CMRR 102 dB currents.Thislow inputcurrentsignificantlyreduces– Open Loop Gain 132 dB IBIAS and IOS errorsintroducedinmegohm resistance, high impedance photodiode,and charge sense– Gain Bandwidth Product 6.2kHz situations.The LPV521 is a member of the– Slew Rate 2.4V/ms PowerWise® familyand has an exceptionalpower-to-– InputVoltageNoise atf= 100 Hz 255 performanceratio. nV/√Hz The wide input common mode voltage range,– Temperature Range −40°C to125°C guaranteed1 mV VOS and 3.5µV/°C TCV OS enables accurateand stablemeasurement forbothhighsideAPPLICATIONS and lowsidecurrentsensing.

WirelessRemote Sensors EMI protectionwas designed intothe device to
PowerlineMonitoring reduce sensitivityto unwanted RF signalsfrom cell phones orotherRFID readers.• Power Meters
BatteryPowered IndustrialSensors The LPV521 isofferedinthe5-pinSC70 package.
Micropower Oxygen sensor and Gas Sensor
ActiveRFID Readers
Zigbee Based Sensors forHVAC Control
Sensor Network Powered by Energy Scavenging TypicalApplication Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2PowerWise isa registeredtrademarkofTexas Instruments. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2009–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) ESD Tolerance(3) Human Body Model 2000V Machine Model 200V Charge-DeviceModel 1000V Any pinrelativetoV- 6V,−0.3V IN+,IN-,OUT Pins V+ + 0.3V,V– – 0.3V V+,V-,OUT Pins 40mA DifferentialInputVoltage(VIN+ -VIN-) ±300 mV StorageTemperatureRange −65°C to150°C JunctionTemperature(4) 150°C MountingTemperature InfraredorConvection(30sec.) 260°C Wave SolderingLead Temp. (4sec.) 260°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage may occur.OperatingRatingsindicateconditionsforwhichthedevice isintendedtobe functional,butspecificperformanceisnotguaranteed.Forguaranteedspecificationsand testconditions,see the ElectricalCharacteristics. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. JEDEC)Field-InducedCharge-DeviceModel,applicablestd.JESD22-C101-C (ESD FICDM std.ofJEDEC). (4) The maximum power dissipationisa functionofTJ(MAX),θJA.The maximum allowablepower dissipationatany ambienttemperatureis PD = (TJ(MAX) – TA)/θJA.Allnumbers applyforpackagessoldereddirectlyontoa PC Board. OperatingRatings(1) TemperatureRange (2) −40°C to125°C SupplyVoltage(VS = V+ -V−) 1.6Vto5.5V Package ThermalResistance(θJA)(2) 5-PinSC70 456 °C/W (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage may occur.OperatingRatingsindicateconditionsforwhichthedevice isintendedtobe functional,butspecificperformanceisnotguaranteed.Forguaranteedspecificationsand testconditions,see the ElectricalCharacteristics. (2) The maximum power dissipationisa functionofTJ(MAX),θJA.The maximum allowablepower dissipationatany ambienttemperatureis PD = (TJ(MAX) – TA)/θJA.Allnumbers applyforpackagessoldereddirectlyontoa PC Board.

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www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 1.8VDC ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 1.8V,V− = 0V,VCM = VO = V+/2,and R L > 1 M Ω. Boldfacelimitsapplyatthetemperatureextremes. Min Typ MaxSymbol Parameter Conditions Units(2) (3) (2) VOS InputOffsetVoltage VCM = 0.3V 0.1 ±1.0 ±1.23 mV TCV OS InputOffsetVoltageDrift(4) ±0.4 ±3 μV/°C IBIAS InputBiasCurrent 0.01 ±1 pA±50 IOS InputOffsetCurrent 10 fA CMRR Common Mode RejectionRatio 0V ≤ VCM ≤ 1.8V 66 92 75 1010V ≤ VCM ≤ 0.7V dB74 75 1201.2V≤ VCM ≤ 1.8V 53 PSRR Power SupplyRejectionRatio 1.6V≤ V+ ≤ 5.5V 85 109 dB VCM = 0.3V 76 CMRR ≥ 67 dB 0 1.8 VCMVR Common Mode VoltageRange CMRR ≥ 60 dB 0 1.8 VO = 0.5Vto1.3V 74 125 dBAVOL LargeSignalVoltageGain R L = 100 kΩ toV+/2 73 VO OutputSwing High R L = 100 kΩ toV+/2 2 50 VIN(diff)= 100 mV 50 mV from eitherrailOutputSwing Low R L = 100 kΩ toV+/2 2 50 VIN(diff)= −100 mV 50 IO Sourcing,VO toV– 1 3 VIN(diff)= 100 mV 0.5 OutputCurrent(5) mA Sinking,VO toV+ 1 3 VIN(diff)= −100 mV 0.5 IS SupplyCurrent VCM = 0.3V 345 400 580 nA 472 600VCM = 1.5V 850 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material. (4) The offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS atthetemperatureextremesby thetotaltemperature change. (5) The shortcircuittestisa momentary open looptest. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LPV521

SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com 1.8VAC ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 1.8V,V− = 0V,VCM = VO = V+/2,and R L > 1 M Ω. Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) GBW Gain-BandwidthProduct C L = 20 pF,R L = 100 kΩ 6.1 kHz SR Slew Rate AV = +1, FallingEdge 2.9 V/msVIN = 0V to1.8V RisingEdge 2.3 θ m Phase Margin C L = 20 pF,R L = 100 kΩ 72 deg G m Gain Margin C L = 20 pF,R L = 100 kΩ 19 dB en Input-ReferredVoltageNoiseDensity f= 100 Hz 265 nV/√Hz Input-ReferredVoltageNoise 0.1Hz to10 Hz 24 μVPP in Input-ReferredCurrentNoise f= 100 Hz 100 fA/√Hz (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material. 3.3VDC ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 3.3V,V− = 0V,VCM = VO = V+/2,and R L > 1 M Ω. Boldfacelimitsapplyatthetemperatureextremes. Min Typ MaxSymbol Parameter Conditions Units(2) (3) (2) VOS InputOffsetVoltage 0.1 ±1.0VCM = 0.3V ±1.23 mV TCV OS InputOffsetVoltageDrift(4) ±0.4 ±3 μV/°C IBIAS InputBiasCurrent 0.01 ±1 pA±50 IOS InputOffsetCurrent 20 fA CMRR Common Mode RejectionRatio 0V ≤ VCM ≤ 3.3V 72 97 78 1060V ≤ VCM ≤ 2.2V dB75 77 1212.7V≤ VCM ≤ 3.3V 76 PSRR Power SupplyRejectionRatio 1.6V≤ V+ ≤ 5.5V 85 109 dBVCM = 0.3V 76 CMRR ≥ 72 dB −0.1 3.4CMVR Common Mode VoltageRange VCMRR ≥ 70 dB 0 3.3 VO = 0.5Vto2.8V 82 120AVOL LargeSignalVoltageGain dBR L = 100 kΩ toV+/2 76 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material. (4) The offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS atthetemperatureextremesby thetotaltemperature change.

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www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 3.3VDC ElectricalCharacteristics(1)(continued) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 3.3V,V− = 0V,VCM = VO = V+/2,and R L > 1 M Ω. Boldfacelimitsapplyatthetemperatureextremes. Min Typ MaxSymbol Parameter Conditions Units(2) (3) (2) VO OutputSwing High R L = 100 kΩ toV+/2 3 50 mVVIN(diff)= 100 mV 50 fromeither OutputSwing Low R L = 100 kΩ toV+/2 2 50 rail VIN(diff)= −100 mV 50 IO OutputCurrent(5) Sourcing,VO toV– 5 11 VIN(diff)= 100 mV 4 mA Sinking,VO toV+ 5 12 VIN(diff)= −100 mV 4 IS SupplyCurrent VCM = 0.3V 346 400 600 nA 600VCM = 3V 471 860 (5) The shortcircuittestisa momentary open looptest. 3.3VAC ElectricalCharacteristics(1) Unlessotherwiseisspecified,alllimitsguaranteedforTA = 25°C, V+ = 3.3V,V− = 0V,VCM = VO = V+/2,and R L > 1 M Ω. Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) GBW Gain-BandwidthProduct C L = 20 pF,R L = 100 kΩ 6.2 kHz SR Slew Rate AV = +1, FallingEdge 2.9 V/msVIN = 0V to3.3V RisingEdge 2.5 θ m Phase Margin C L = 20 pF,R L = 10 kΩ 73 deg G m Gain Margin C L = 20 pF,R L = 10 kΩ 19 dB en Input-ReferredVoltageNoiseDensity f= 100 Hz 259 nV/√Hz Input-ReferredVoltageNoise 0.1Hz to10 Hz 22 μVPP in Input-ReferredCurrentNoise f= 100 Hz 100 fA/√Hz (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material. 5V DC ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,and R L > 1M Ω.Boldface limitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) VOS InputOffsetVoltage VCM = 0.3V 0.1 ±1.0 ±1.23 mV ±1.23 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LPV521

SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com 5V DC ElectricalCharacteristics(1)(continued) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,and R L > 1M Ω.Boldface limitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) TCV OS InputOffsetVoltageDrift(4) ±0.4 ±3.5 μV/°C IBIAS InputBiasCurrent 0.04 ±1 pA±50 IOS InputOffsetCurrent 60 fA CMRR Common Mode RejectionRatio 0V ≤ VCM ≤ 5.0V 75 102 0V ≤ VCM ≤ 3.9V 84 108 dB80 4.4V≤ VCM ≤ 5.0V 77 115 PSRR Power SupplyRejectionRatio 1.6V≤ V+ ≤ 5.5V 85 109 dBVCM = 0.3V 76 CMVR Common Mode VoltageRange CMRR ≥ 75 dB −0.1 5.1 VCMRR ≥ 74 dB 0 5 AVOL LargeSignalVoltageGain VO = 0.5Vto4.5V 84 132 dB R L = 100 kΩ toV+/2 76 VO OutputSwing High R L = 100 kΩ toV+/2 3 50 VIN(diff)= 100 mV 50 mV from eitherrailOutputSwing Low R L = 100 kΩ toV+/2 3 50 VIN (diff)= −100 mV 50 IO OutputCurrent(5) Sourcing,VO toV− 15 23 VIN(diff)= 100 mV 8 mA Sinking,VO toV+ 15 22 VIN(diff)= −100 mV 8 IS SupplyCurrent VCM = 0.3V 351 400 620 nA VCM = 4.7V 475 600 870 (4) The offsetvoltageaveragedriftisdeterminedby dividingthechange inVOS atthetemperatureextremesby thetotaltemperature change. (5) The shortcircuittestisa momentary open looptest. 5V AC ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,and R L > 1M Ω.Boldface limitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) GBW Gain-BandwidthProduct C L = 20 pF,R L = 100 kΩ 6.2 kHz SR Slew Rate AV = +1, FallingEdge 1.1 2.7 VIN = 0V to5V 1.2 V/ms RisingEdge 1.1 2.4 1.2 θ m Phase Margin C L = 20 pF,R L = 100 kΩ 73 deg G m Gain Margin C L = 20 pF,R L = 100 kΩ 20 dB (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA.AbsoluteMaximum Ratingsindicatejunctiontemperaturelimitsbeyond whichthe devicemay be permanentlydegraded,eithermechanicallyorelectrically. (2) Alllimitsareguaranteedby testing,statisticalanalysisordesign. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization.Actualtypicalvaluesmay varyovertimeand willalsodepend on theapplicationand configuration.The typicalvaluesarenottestedand arenotguaranteedon shippedproduction material.

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+ - OUT IN+ IN- LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 5V AC ElectricalCharacteristics(1)(continued) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,and R L > 1M Ω.Boldface limitsapplyatthetemperatureextremes. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) en Input-ReferredVoltageNoiseDensity f= 100 Hz 255 nV/√Hz Input-ReferredVoltageNoise 0.1Hz to10 Hz 22 μVPP in Input-ReferredCurrentNoise f= 100 Hz 100 fA/√Hz EMIRR EMI RejectionRatio,IN+ and IN−(4) VRF_PEAK = 100 mV P (−20 dBP), 121 f= 400 MHz VRF_PEAK = 100 mV P (−20 dBP), 121 f= 900 MHz dB VRF_PEAK = 100 mV P (−20 dBP), 124 f= 1800 MHz VRF_PEAK = 100 mV P (−20 dBP), 142 f= 2400 MHz (4) The EMI RejectionRatioisdefinedas EMIRR = 20log(VRF_PEAK /ΔVOS ). CONNECTION DIAGRAM Figure1. 5-PinSC70 Top View Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LPV521

PERCENTAGE (%) VS = 3.3V TA = 25oC VCM = VS/2 -1.0 VOS (mV) PERCENTAGE (%) -3.0 TCVOS (PV/C) VS = 3.3V -40oC d TA d 125oC VCM = VS/2 PERCENTAGE (%) VS = 1.8V TA = 25oC VCM = VS/2 -1.0 VOS (mV) PERCENTAGE (%) TCV OS (PV/C) VS = 1.8V -40oC = TA = 125oC VCM = VS/2 SUPPLY VOLTAGE (V) SUPPLY CURRENT (nA) 800 700 600 500 400 300 200 100 1 2 3 4 5 6 125° C 85° C 25° C -40° C VCM = 0.3V SUPPLY VOLTAGE (V) SUPPLY CURRENT (nA) 800 700 600 500 400 300 200 100 1 2 3 4 5 6 125° C 85° C 25° C -40° C VCM = VS ± 0.3V LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com TypicalPerformance Characteristics AtTJ = 25°C, unlessotherwisespecified. Supply Currentvs.Supply Voltage Supply Currentvs.Supply Voltage Figure2. Figure3. OffsetVoltageDistribution TCV OS Distribution Figure4. Figure5. OffsetVoltageDistribution TCV OS Distribution Figure6. Figure7.

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VCM (V) VOS (éV) 150 100 -50 -100 -150 VS = 5V 125° C 85° C 25° C -40° C VS (V) VOS (éV) 150 100 -50 -100 -150 1 2 3 4 5 6 VCM = 0.3V 125° C 85° C 25° C -40° C VCM (V) VOS (éV) 300 200 100 -100 -200 -300 VS = 1.8V 125° C 85° C 25° C -40° C VCM (V) VOS (éV) 150 100 -50 -100 -150 VS = 3.3V 125° C 85° C 25° C -40° C PERCENTAGE (%) TCV OS (PV/C) VS = 5V -40oC d TA d 125oC VCM = VS/2 -1.0 PERCENTAGE (%) VOS (mV) VS = 5V TA = 25oC VCM = VS/2 LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. OffsetVoltageDistribution TCV OS Distribution Figure8. Figure9. InputOffsetVoltagevs.InputCommon Mode InputOffsetVoltagevs.InputCommon Mode Figure10. Figure11. InputOffsetVoltagevs.InputCommon Mode InputOffsetVoltagevs.Supply Voltage Figure12. Figure13. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LPV521

ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 1.8V 125° C 85° C 25° C -40° C ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 3.3V 125° C 85° C 25° C -40° C VOUT (V) VOS (éV) 150 100 -50 -100 -150 VS = 3.3V 125° C 85° C 25° C -40° C VOUT (V) VOS (éV) 150 100 -50 -100 -150 VS = 5V 125° C 85° C 25° C -40° C VS (V) VOS (éV) 150 100 -50 -100 -150 1 2 3 4 5 6 VCM = VS - 0.3V 125° C 85° C 25° C -40° C VOUT (V) VOS (éV) 150 100 -50 -100 -150 VS = 1.8V 125° C 85° C 25° C -40° C LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. InputOffsetVoltagevs.Supply Voltage InputOffsetVoltagevs.Output Voltage Figure14. Figure15. InputOffsetVoltagevs.Output Voltage InputOffsetVoltagevs.Output Voltage Figure16. Figure17. InputOffsetVoltagevs.Sourcing Current InputOffsetVoltagevs.Sourcing Current Figure18. Figure19.

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OUTPUT VOLTAGE REFERENCED TO V + (V) ISOURCE (mA) VS = 1.8V 125° C 85° C 25° C -40° C OUTPUT VOLTAGE REFERENCED TO V - (V) ISINK (mA) VS = 1.8V 125° C 85° C 25° C -40° C ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 3.3V 125° C 85° C 25° C -40° C ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 5V 125° C 85° C 25° C -40° C ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 5V 125° C 85° C 25° C -40° C ISOURCE (mA) VOS (éV) 150 100 -50 -100 -150 VS = 1.8V 125° C 85° C 25° C -40° C LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. InputOffsetVoltagevs.Sourcing Current InputOffsetVoltagevs.SinkingCurrent Figure20. Figure21. InputOffsetVoltagevs.SinkingCurrent InputOffsetVoltagevs.SinkingCurrent Figure22. Figure23. Sourcing Currentvs.Output Voltage SinkingCurrentvs.Output Voltage Figure24. Figure25. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LPV521

VS (V) ISOURCE (mA) 1 2 3 4 5 6 VCM = VS/2 125° C 85° C 25° C -40° C VS (V) ISINK (mA) 1 2 3 4 5 6 VCM = VS/2 125° C 85° C 25° C -40° C OUTPUT VOLTAGE REFERENCED TO V + (V) ISOURCE (mA) 0 1 2 3 4 5 VS = 5V 125° C 85° C 25° C -40° C OUTPUT VOLTAGE REFERENCED TO V - (V) ISINK (mA) 0 1 2 3 4 5 VS = 5V 125° C 85° C 25° C -40° C OUTPUT VOLTAGE REFERENCED TO V + (V) ISOURCE (mA) VS = 3.3V 125° C 85° C 25° C -40° C OUTPUT VOLTAGE REFERENCED TO V - (V) ISINK (mA) VS = 3.3V 125° C 85° C 25° C -40° C LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Sourcing Currentvs.Output Voltage SinkingCurrentvs.Output Voltage Figure26. Figure27. Sourcing Currentvs.Output Voltage SinkingCurrentvs.Output Voltage Figure28. Figure29. Sourcing Currentvs.Supply Voltage SinkingCurrentvs.Supply Voltage Figure30. Figure31.

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VCM (V) IBIAS (fA) -10 -20 -30 -40 -40° C 25° C VS = 3.3V VCM (V) IBIAS (pA) -10 -15 85° C 125° C VS = 3.3V VCM (V) IBIAS (fA) -10 -15 -40° C 25° C VS = 1.8V VCM (V) IBIAS (pA) -10 -15 85° C 125° C VS = 1.8V VS (V) VOUT FROM RAIL (mV) 1 2 3 4 5 6 R L = 100 k: 125° C 85° C 25° C -40° C VS (V) VOUT FROM RAIL (mV) 1 2 3 4 5 6 R L = 100 k: 125° C 85° C 25° C -40° C LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Output Swing High vs.Supply Voltage Output Swing Low vs.Supply Voltage Figure32. Figure33. InputBias Currentvs.Common Mode Voltage InputBias Currentvs.Common Mode Voltage Figure34. Figure35. InputBias Currentvs.Common Mode Voltage InputBias Currentvs.Common Mode Voltage Figure36. Figure37. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LPV521

PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 1.8V C L = 20 pF R L = 1 M:PHASE GAIN -40° C 125° C 25° C 85° C PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 3.3V C L = 20 pF R L = 1 M:PHASE GAIN -40° C 125° C 25° C 85° C FREQUENCY (Hz) PSRR (dB) 100 VS = 1.8V, 3.3V, 5VVS = 5V VS = 3.3V VS = 1.8V +PSRR -PSRR 10 100 1k 10k 100k FREQUENCY (Hz) CMRR (dB) 100 1e1 1e2 1e3 1e4 1e510 100 1k 10k 100k VS = 5V VS = 1.8V VS = 1.8V, 3.3V, 5V VCM (V) IBIAS (fA) 400 300 200 100 -100 -200 -300 0 1 2 3 4 5 -40° C 25° C VS = 5V VCM (V) IBIAS (pA) -10 -15 -20 0 1 2 3 4 5 85° C 125° C VS = 5V LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. InputBias Currentvs.Common Mode Voltage InputBias Currentvs.Common Mode Voltage Figure38. Figure39. PSRR vs.Frequency CMRR vs.Frequency Figure40. Figure41. Frequency Response vs.Temperature Frequency Response vs.Temperature Figure42. Figure43.

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PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 1.8V R L = 10 M: C L = 200 pF PHASE GAIN C L = 20 pFC L = 100 pF C L = 50 pF PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 3.3V R L = 10 M: C L = 200 pF PHASE GAIN C L = 20 pF C L = 100 pF C L = 50 pF PHASE (° ) FREQUENCY (Hz) GAIN (dB) 130 110 -10 -30 100 1k 10k 100k VS = 3.3V C L = 20 pF R L = 1 M:PHASE R L = 10 M: R L = 10 k: R L = 100 k:60 -20 GAIN PHASE (° ) FREQUENCY (Hz) GAIN (dB) 130 110 -10 -30 100 1k 10k 100k VS = 5V C L = 20 pF R L = 1 M:PHASE GAIN R L = 10 M: R L = 10 k: R L = 100 k:60 -20 PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 5V C L = 20 pF R L = 1 M:PHASE GAIN -40° C 125° C 25° C 85° C PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 1.8V C L = 20 pF R L = 1 M:PHASE GAIN R L = 10 M: R L = 10 k: R L = 100 k: LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Frequency Response vs.Temperature Frequency Response vs.R L Figure44. Figure45. Frequency Response vs.R L Frequency Response vs.R L Figure46. Figure47. Frequency Response vs.C L Frequency Response vs.C L Figure48. Figure49. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LPV521

5 PV/DIV

-10 -15 VS = 3.3V VCM = VS/2 1s/DIV -10 -15 VS = 5V VCM = VS/2 FREQUENCY (Hz) VOLTAGE NOISE (nV/ íHz) VS = 5V 1 10 100 1k 10k 100 1000 1s/DIV -10 -15 VS = 1.8V VCM = VS/2 PHASE (° ) FREQUENCY (Hz) GAIN (dB) -20 130 110 -10 -30 100 1k 10k 100k VS = 5V R L = 10 M: C L = 200 pF PHASE GAIN C L = 20 pF C L = 100 pF C L = 50 pF SUPPLY VOLTAGE (V) SLEW RATE (V/ms) 3.3 3.0 2.7 2.4 2.1 1.8 FALLING EDGE RISING EDGE AV = +1 VOUT = VS LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Frequency Response vs.C L Slew Rate vs.Supply Voltage Figure50. Figure51. VoltageNoise vs.Frequency 0.1to10 Hz Time Domain VoltageNoise Figure52. Figure53. 0.1to10 Hz Time Domain VoltageNoise 0.1to10 Hz Time Domain VoltageNoise Figure54. Figure55.

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FREQUENCY (MHz) EMIRR V_PEAK (dB) 170 150 130 110 VS = 5V VPEAK = -20 dBVp 1V/DIV 2 ms/DIV V+= +2.5V V- = -2.5V INPUT OUTPUT VS = 5V R L = 100 k: 500 mV/DIV

200 Ps/DIV

VS = 1.8V R L = 100 k: 500 mV/DIV VS = 5V R L = 100 k: 50 mV/DIV VS = 1.8V R L = 100 k: 50 mV/DIV www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Small SignalPulse Response Small SignalPulse Response Figure56. Figure57. Large SignalPulse Response Large SignalPulse Response Figure58. Figure59. Overload Recovery Waveform EMIRR vs.Frequency Figure60. Figure61. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LPV521

SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com

APPLICATION INFORMATION

The LPV521 is fabricatedwithTexas Instruments'state-of-the-artVIP50 process.This proprietaryprocess dramaticallyimprovestheperformanceofTexas Instruments'low-powerand low-voltageoperationalamplifiers. The followingsectionsshowcase theadvantagesoftheVIP50 processand highlightcircuitswhichenableultra- lowpower consumption. Small signalsfrom transducersinremote and distributedsensingapplicationscommonly sufferstrong60 Hz interferencefromAC power lines.The circuitofFigure62 notchesoutthe60 Hz and providesa gainAV = 2 for the sensorsignalrepresentedby a 1 kHz sinewave. Similarstagesmay be cascaded to remove 2nd and 3rd harmonicsof60 Hz. Thanks tothenA power consumptionoftheLPV521, even 5 such circuitscan run for9.5 yearsfroma smallCR2032 lithiumcell.These batterieshave a nominalvoltageof3V and an end oflifevoltage of2V.Withan operatingvoltagefrom1.6Vto5.5VtheLPV521 can functionoverthisvoltagerange. The notchfrequencyissetby F0 = 1/2πRC. To achievea 60 Hz notchuse R = 10 M Ω and C = 270 pF. If eliminating50 Hz noise,whichiscommon inEuropean systems,use R = 11.8M Ω and C = 270 pF. The Twin T Notch Filterworks by havingtwo separatepathsfrom VIN totheamplifier’s input.A low frequency path throughthe resistorsR - R and anotherseparatehigh frequencypath throughthe capacitorsC - C. However, atfrequenciesaround thenotchfrequency,thetwo pathshave opposingphase anglesand thetwo signalswilltendtocancelattheamplifier’s input. To ensure thatthe targetcenterfrequencyisachievedand to maximize the notchdepth (Q factor)the filter needs to be as balanced as possible.To obtaincircuitbalance,whileovercoming limitationsof available standardresistorand capacitorvalues,use passivesinparalleltoachievethe2C and R/2 circuitrequirements forthefiltercomponents thatconnecttoground. To make surepassivecomponent valuesstayas expectedcleanboardwithalcohol,rinsewithdeionizedwater, and airdry.Make sureboard remainsina relativelylow humidityenvironmenttominimizemoisturewhich may increasethe conductivityof board components. Also largeresistorscome withconsiderableparasiticstray capacitancewhicheffectscan be reducedby cuttingoutthegroundplanebelowcomponents ofconcern. Largeresistorsareused inthefeedbacknetworktominimizebatterydrain.When designingwithlargeresistors, resistorthermalnoise,op amp currentnoise,as wellas op amp voltagenoise,must be consideredinthenoise analysisofthecircuit.The noiseanalysisforthecircuitinFigure62 can be done overa bandwidthof5 kHz, whichtakestheconservativeapproachofoverestimatingthebandwidth(LPV521 typicalGBW/A V islower).The totalnoiseattheoutputisapproximately800 µVpp, which isexcellentconsideringthetotalconsumptionofthe circuitisonly540 nA. The dominantnoisetermsareop amp voltagenoise(550µVpp),currentnoisethroughthe feedbacknetwork(430 µVpp),and currentnoisethroughthe notchfilternetwork(280 µVpp).Thus the total circuit'snoiseisbelow1/2LSB ofa 10 bitsystemwitha 2 V reference,whichis1 mV.

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10 M: VOUT 10 M: 10 M: 270 pF 270 pF 270 pF CR2032 Coin Cell 225 mAh = 5 circuits @ 9.5 yrs. each AV = 2 V/V 10 M: 270 pF VBATT VBATT = 3V o2V @ end of life LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 Figure62. 60 Hz Notch Filter Figure63. 60 Hz Notch FilterWaveform BATTERY CURRENT SENSING The rail-to-railcommon mode inputrange and theverylow quiescentcurrentmake theLPV521 idealtouse in highsideand low sidebatterycurrentsensingapplications.The highsidecurrentsensingcircuitinFigure64 is commonly used ina batterychargertomonitorthechargingcurrentinordertopreventovercharging.A sense resistorR SENSE isconnectedinserieswiththebattery.The theoreticaloutputvoltageofthecircuitisVOUT = [ (RSENSE × R 3)/R 1 ]× ICHARGE .Inreality,however,due tothefiniteCurrentGain,β,ofthetransistorthecurrent thattravelsthroughR 3 willnotbe ICHARGE ,butinstead,willbe α × ICHARGE orβ/(β+1)× ICHARGE .A Darlingtonpair can be used to increasethe β and performanceof the measuring circuit.Using the components shown in Figure64 willresultinVOUT ≈ 4000 Ω × ICHARGE .Thisisidealtoamplifya 1 mA ICHARGE tonearfullscaleofan ADC withVREF at4.1V.A resistor,R2 isused atthenon-invertinginputoftheamplifier,withthesame valueas R1 tominimizeoffsetvoltage.SelectingvaluesperFigure64 willlimitthecurrenttravelingthroughtheR 1 – Q1 – R 3 legofthecircuittounder1 µA whichison thesame orderas theLPV521 supplycurrent.Increasingresistors R 1 ,R 2 ,and R 3 willdecreasethemeasuringcircuitsupplycurrentand extendbatterylife.DecreasingR SENSE will minimizeerrordue toresistortolerance,however,thiswillalsodecreaseVSENSE = ICHARGE × R SENSE ,and inturn the amplifieroffsetvoltagewillhave a more significantcontributionto the totalerrorof the circuit.With the components shown inFigure64 themeasurement circuitsupplycurrentcan be keptbelow 1.5µA and measure 100 µA to1 mA.. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LPV521

10: VOUT - +LOAD 2N2907 R SENSE R 1 24.9 k: R 2 24.9 k: R 3 10 M: ICHARGE VOUT = X ICHARGE R SENSE X R3 R 1 LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com Figure64. High Side CurrentSensing PORTABLE GAS DETECTION SENSOR Gas sensorsare used inmany differentindustrialand medicalapplications.They generatea currentwhich is proportionalto the percentageof a particulargas sensed inan airsample.Thiscurrentgoes througha load resistorand theresultingvoltagedropismeasured.Depending on thesensed gas and sensitivityofthesensor, theoutputcurrentcan be intheorderoftensofmicroamperestoa few milliamperes.Gas sensordatasheets oftenspecifya recommended loadresistorvalueortheysuggesta rangeofloadresistorstochoose from. Oxygen sensorsare used when airqualityor oxygen deliveredto a patientneeds to be monitored.Fresh air contains20.9% oxygen. Airsamples containinglessthan 18% oxygen are considereddangerous.Oxygen sensorsare alsoused inindustrialapplicationswhere theenvironmentmust lackoxygen.An example iswhen foodisvacuum packed.There aretwo main categoriesofoxygen sensors,thosewhichsense oxygen when itis abundantlypresent(i.e.inairornearan oxygen tank)and thosewhichdetecttracesofoxygen inppm. Figure65 shows a typicalcircuitused to amplifythe outputof an oxygen detector.The LPV521 makes an excellentchoiceforthisapplicationas itonlydraws 345 nA ofcurrentand operateson supplyvoltagesdown to 1.6V.This applicationdetectsoxygen in air.The oxygen sensor outputsa known currentthroughthe load resistor.This valuechanges withthe amount of oxygen presentin the airsample.Oxygen sensorsusually recommend a particularloadresistorvalueorspecifya rangeofacceptablevaluesfortheloadresistor.Oxygen sensorstypicallyhave a lifeofone totwo years.The use ofthenanopower LPV521 means minimalpower usage by theop amp and itenhances thebatterylife.Withthecomponents shown inFigure65 thecircuitcan consume lessthan 0.5 µA of currentensuringthateven batteriesused incompact portableelectronics,withlow mAh chargeratings,couldlastbeyond thelifeoftheoxygen sensor.The precisionspecificationsoftheLPV521, such as itsverylow offsetvoltage,low TCV OS ,low inputbiascurrent,highCMRR, and highPSRR areotherfactors whichmake theLPV521 a greatchoiceforthisapplication.

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100 M: 1 M: R L OXYGEN SENSOR LPV521 www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 Figure65. PrecisionOxygen Sensor INPUT STAGE The LPV521 has a rail-to-railinputwhich providesmore flexibilityforthe system designer.Rail-to-railinputis achievedby usinginparallel,one PMOS differentialpairand one NMOS differentialpair.When the common mode inputvoltage(VCM )isnearV+, theNMOS pairison and thePMOS pairisoff.When VCM isnearV−,the NMOS pairisoffand thePMOS pairison.When VCM isbetween V+ and V−,internallogicdecideshow much currenteach differentialpairwillget.This speciallogicensures stableand low distortionamplifieroperation withintheentirecommon mode voltagerange. Because bothinputstageshave theirown offsetvoltage(VOS ) characteristic,theoffsetvoltageoftheLPV521 becomes a functionofVCM .VOS has a crossoverpointat1.0V below V+. Refertothe’VOS vs.VCM ’curveinthe TypicalPerformance Characteristicssection.Cautionshould be taken in situationswhere the inputsignal amplitudeiscomparableto the VOS valueand/orthe designrequireshighaccuracy.In thesesituations,itis necessaryfortheinputsignaltoavoidthecrossoverpoint.Inaddition,parameterssuch as PSRR and CMRR whichinvolvetheinputoffsetvoltagewillalsobe affectedby changes inVCM acrossthedifferentialpairtransition region. OUTPUT STAGE The LPV521 outputvoltageswings 3 mV from railsat 3.3V supply,which providesthe maximum possible dynamicrangeattheoutput.Thisisparticularlyimportantwhen operatingon lowsupplyvoltages. The LPV521 Maximum OutputVoltageSwing definesthe maximum swing possibleunder a particularoutput load.The LPV521 outputswings50 mV fromtherailat5V supplywithan outputloadof100 kΩ. DRIVING CAPACITIVE LOAD The LPV521 isinternallycompensated forstableunitygainoperation,witha 6.2 kHz typicalgainbandwidth. However, the unitygainfolloweristhe most sensitiveconfigurationto capacitiveload.The combinationof a capacitiveloadplacedattheoutputofan amplifieralongwiththeamplifier’s outputimpedance createsa phase lag,whichreducesthephase marginoftheamplifier.Ifthephase marginissignificantlyreduced,theresponse willbe under damped which causes peakinginthetransferand,when thereistoomuch peaking,theop amp mightstartoscillating. Inordertodriveheavy capacitiveloads,an isolationresistor,R ISO,shouldbe used,as shown inFigure66.By usingthisisolationresistor,the capacitiveloadisisolatedfrom the amplifier’s output.The largerthe valueof R ISO, the more stablethe amplifierwillbe. Ifthe valueof R ISO issufficientlylarge,the feedbackloopwillbe stable,independentof the valueof C L. However, largervaluesof R ISO resultin reduced outputswing and reducedoutputcurrentdrive. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LPV521

/DIV VS = 5V VIN R ISO VOUT C L LPV521 SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com Figure66. ResistiveIsolationofCapacitiveLoad Recommended minimum valuesforR ISO are giveninthe followingtable,for5V supply.Figure67 shows the typicalresponseobtainedwiththeC L = 50 pF and R ISO = 154 kΩ.The othervaluesofR ISO inthetablewere chosen toachievesimilardampening attheirrespectivecapacitiveloads.NoticethatfortheLPV521 withlarger C L a smallerR ISO can be used forstability.However, fora givenC L a largerR ISO willprovidea more damped response.Forcapacitiveloadsof20 pF and belowno isolationresistorisneeded. C L R ISO 0 – 20 pF notneeded 50 pF 154 kΩ 100 pF 118 kΩ 500 pF 52.3kΩ 1 nF 33.2kΩ 5 nF 17.4kΩ 10 nF 13.3kΩ Figure67. Step Response EMI SUPPRESSION The near-ubiquityof cellular,bluetooth,and Wi-Fisignalsand the rapidriseof sensingsystems incorporating wirelessradiosmake electromagneticinterference(EMI) an evermore importantdesign considerationfor precisionsignalpaths.Though RF signalslieoutsidetheop amp band,RF carrierswitchingcan modulatethe DC offsetoftheop amp. Alsosome common RF modulationschemes can inducedown-convertedcomponents. The added DC offsetand the inducedsignalsare amplifiedwiththe signalof interestand thus corruptthe measurement. The LPV521 uses on chipfiltersto rejecttheseunwanted RF signalsat the inputsand power supplypins;therebypreservingtheintegrityoftheprecisionsignalpath.

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www.ti.com SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 Twistedpaircablingand theactivefront-end’s common-mode rejectionprovideimmunityagainstlow frequency noise(i.e.60 Hz or 50 Hz mains)butare ineffectiveagainstRF interference.Even a few centimetersofPCB traceand wiringforsensorslocatedclosetotheamplifiercan pickup significant1 GHz RF. The integratedEMI filtersoftheLPV521 reduceoreliminateexternalshieldingand filteringrequirements,therebyincreasingsystem robustness.A largerEMIRR means more rejectionof the RF interference.For more informationon EMIRR, pleaserefertoAN-1698. POWER SUPPLIES AND LAYOUT The LPV521 operatesfroma single1.6V to5.5V power supply.Itisrecommended tobypass thepower supplies witha 0.1μF ceramiccapacitorplacedclosetotheV+ and V− pins. Ground layoutimprovesperformanceby decreasingtheamount ofstraycapacitanceand noiseattheop amp's inputsand outputs.To decreasestraycapacitance,minimizePC board tracelengthsand resistorleads,and placeexternalcomponents closetotheop amps' pins. Copyright© 2009–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LPV521

SNOSB14C –AUGUST 2009–REVISED FEBRUARY 2013 www.ti.com

REVISION HISTORY

Changes from RevisionB (February2013)toRevisionC Page

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www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LPV521MG/NOPB ACTIVE SC70 DCK 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AHA LPV521MGE/NOPB ACTIVE SC70 DCK 5 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AHA LPV521MGX/NOPB ACTIVE SC70 DCK 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AHA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 14-Mar-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LPV521MG/NOPB SC70 DCK 5 1000 210.0 185.0 35.0 LPV521MGE/NOPB SC70 DCK 5 250 210.0 185.0 35.0 LPV521MGX/NOPB SC70 DCK 5 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 14-Mar-2013 Pack Materials-Page 2

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Summary

LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier

Description

LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier

Source title LPV521MG Datasheet(PDF) - Texas Instruments

Read LPV521MG online.

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Document overview

Technical content

10 M:10 M:

60 Hz Twin T Notch Filter

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5 PV/DIV

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200 Ps/DIV

APPLICATION INFORMATION

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REVISION HISTORY

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LPV521MG specifications and overview.

More parts from the same family.