LPV511MGX/NOPB

LPV511 TI1 | Alldatasheet

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www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 LPV511Micropower,Rail-to-RailInputandOutputOperationalAmplifier Check forSamples: LPV511 1FEATURES DESCRIPTION The LPV511 is a micropower operationalamplifier2(Typicalat3V Supply Unless OtherwiseNoted) thatoperatesfroma voltagesupplyrangeas wide as• Wide Supply VoltageRange 2.7Vto12V 2.7Vto12V withensuredspecificationsat3V,5V and

• Slew Rate 7.7V/ms 12V. The LPV511 exhibitsan excellentspeed to power ratio,drawingonly880 nA of supplycurrent• Supply Current880 nA with a bandwidth of 27 kHz. These specifications• Output ShortCircuitCurrent1.35mA make theLPV511 an idealchoiceforbatterypowered
• Rail-to-RailInput systems thatrequirelong lifethrough low supply current,such as instrumentation,sensorconditioning• Rail-to-RailOutput 100 mV from Rails and batterycurrentmonitoring.• Bandwidth (CL = 50 pF,R L = 1 M Ω)27 kHz The LPV511 has an inputrange thatincludesboth• UnityGain Stable supplyrailsforground and highsidebatterysensing applications.The LPV511 outputswings within100APPLICATIONS mV of eitherrailto maximize the signal'sdynamic
• BatteryPowered Systems range in low supply applications.In addition,the outputiscapableofsourcing650 µA ofcurrentwhen• SecuritySystems powered by a 12V battery.• Micropower Thermostats The LPV511 isfabricatedon TI'sadvanced VIP50C• SolarPowered Systems process.• PortableInstrumentation The LPV511 isavailableinthe space savingSC70• Micropower Filter package whichmakes itidealforportableelectronics• Remote Sensor Amplifier withareaconstrainedPC boards. TypicalApplication Figure1. High Side BatteryCurrentSensor Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2005–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) Human Body 2 KV ESD Tolerance(3) Machine Model 200V VIN Differential 2.1V SupplyVoltage(V+ -V−) 13.2V VoltageatInput/Outputpins V+ +0.3V,V− −0.3V StorageTemperatureRange −65°C to+150°C ShortCircuitDuration See (4) JunctionTemperature(5) +150°C InfraredorConvection(20sec) 235°C SolderingInformation Wave SolderingLead Temp. (10sec) 260°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristicsTables. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Human Body Model:1.5kΩ inserieswith100 pF.Machine Model:0Ω inserieswith200 pF. (4) OutputshortcircuitdurationisinfiniteforV+ < 6V atroom temperatureand below.ForV+ > 6V,allowableshortcircuitdurationis1.5ms. (5) The maximum power dissipationisa functionofTJ(MAX),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA .Allnumbers applyforpackagessoldereddirectlyontoa PC board. OperatingRatings(1) TemperatureRange (2) −40°C to+85°C SupplyVoltage(V+ – V−) 2.7Vto12V Package ThermalResistance(θJA)(2) 5-PinSC70 456°C/W (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristicsTables. (2) The maximum power dissipationisa functionofTJ(MAX),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA .Allnumbers applyforpackagessoldereddirectlyontoa PC board.

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www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 3V ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsarespecifiedforTJ = 25°C, V+ = 3V,V− = 0V,VCM = VO = V+/2,and R L = 100 kΩ toV+/2. Boldfacelimitsapplytothetemperaturerange of−40°C to85°C. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) VOS InputOffsetVoltage ±0.2 ±3 mV±3.8 TC VOS InputOffsetVoltageDrift See (4) ±0.3 ±15 μV/°C IB InputBiasCurrent(5) VCM = 0.5V −1000 −320 –1600 pA VCM = 2.5V 110 800 1900 IOS InputOffsetCurrent ±10 pA CMRR Common Mode RejectionRatio VCM Steppedfrom0V to1.5V 77 100 VCM Steppedfrom2.4Vto3V 75 115 dB68 VCM Steppedfrom0.5Vto2.5V 60 80 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5V,VCM = 0.5V 72 114 V+ = 3V to5V,VCM = 0.5V 76 115 dB72 V+ = 5V to12V,VCM = 0.5V 84 117 CMVR InputCommon-Mode Voltage CMRR ≥ 50 dB −0.1 3.1 VRange 0 3.0 AVOL LargeSignalVoltageGain Sinking,VO = 2.5V 75 105 dB70Sourcing,VO = 0.5V VO OutputSwing High VID = 100 mV 2.85 2.90 V2.8 OutputSwing Low VID = −100 mV 100 150 mV200 ISC OutputShortCircuitCurrent(6) Sourcing −500 −225 VID = 100 mV µA Sinking 225 1350 VID = −100 mV IS SupplyCurrent 0.88 1.2 µA1.5 GBW Gain BandwidthProduct R L = 1 M Ω,C L= 50 pF 27 kHz Phase Margin R L = 1 M Ω,C L= 50 pF 53 deg en Input-ReferredVoltageNoise f= 100 Hz 320 nV/√Hz in Input-ReferredCurrentNoise f= 10 Hz .02 pA/√Hz f= 1 kHz .01 (1) Electricaltablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevice. (2) Limitsare100% productiontestedat25°C. Limitsovertheoperatingtemperaturerangearespecifiedthroughcorrelationsusingthe StatisticalQualityControl(SQC) method. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization. (4) Offsetvoltagedriftisspecifiedby designand/orcharacterizationand isnottestedinproduction.Offsetvoltagedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. (6) The ShortCircuitTestisa momentary test.See Note 4 intheAbsoluteMaximum RatingsTable. (7) Slew rateistheaverageoftherisingand fallingslewrates. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LPV511

SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com 5V ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsarespecifiedforTJ = 25°C, V+ = 5V,V− = 0V,VCM = VO = V+/2,and R L = 100 kΩ toV+/2. Boldfacelimitsapplytothetemperaturerange of−40°C to85°C. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) VOS InputOffsetVoltage ±0.2 ±3 mV±3.8 TC VOS InputOffsetVoltageDrift See (4) ±0.3 ±15 μV/°C IB InputBiasCurrent(5) VCM = 0.5V −1000 −320 −1600 pA VCM = 4.5V 110 800 1900 IOS InputOffsetCurrent ±10 pA CMRR Common Mode RejectionRatio VCM Steppedfrom0V to2.5V 80 115 VCM Steppedfrom4.4to5V 75 107 dB68 VCM Steppedfrom0.5to4.5V 65 87 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5V,VCM = 0.5V 72 114 V+ = 3V to5V,VCM = 0.5V 76 115 dB72 V+ = 5V to12V,VCM = 0.5V 84 117 CMVR InputCommon-Mode Voltage CMRR ≥ 50 dB −0.1 5.1 VRange 0 5 AVOL LargeSignalVoltageGain Sinking,VO = 4.5V 78 110 dB73Sourcing,VO = 0.5V VO OutputSwing High VID = 100 mV 4.8 4.89 V4.75 OutputSwing Low VID = −100 mV 110 200 mV250 ISC OutputShortCircuitCurrent(6) SourcingtoV− −550 −225 VID = 100 mV µA SinkingtoV+ 225 1350 VID = −100 mV IS SupplyCurrent 0.97 1.2 µA1.5 GBW Gain BandwidthProduct R L = 1 M Ω,C L= 50 pF 27 kHz Phase Margin R L = 1 M Ω,C L= 50 pF 53 deg en Input-ReferredVoltageNoise f= 100 Hz 320 nV/√Hz in Input-ReferredCurrentNoise f= 10 Hz .02 pA/√Hz f= 1 kHz .01 (1) Electricaltablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevice. (2) Limitsare100% productiontestedat25°C. Limitsovertheoperatingtemperaturerangearespecifiedthroughcorrelationsusingthe StatisticalQualityControl(SQC) method. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization. (4) Offsetvoltagedriftisspecifiedby designand/orcharacterizationand isnottestedinproduction.Offsetvoltagedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. (6) The ShortCircuitTestisa momentary test.See Note 4 intheAbsoluteMaximum RatingsTable. (7) Slew rateistheaverageoftherisingand fallingslewrates.

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www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 12V ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsarespecifiedforTJ = 25°C, V+ = 12V,V− = 0V,VCM = VO = V+/2,and R L = 100 kΩ to V+/2.Boldfacelimitsapplytothetemperaturerange of−40°C to85°C. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) VOS InputOffsetVoltage ±0.2 ±3 mV±3.8 TC VOS InputOffsetVoltageDrift See (4) ±0.3 ±15 μV/°C IB InputBiasCurrent(5) VCM = 0.5V −1000 −320 −1600 pA VCM = 11.5V 110 800 1900 IOS InputOffsetCurrent ±10 pA CMRR Common Mode RejectionRatio VCM Steppedfrom0V to+6V 75 115 VCM Steppedfrom11.4Vto12V 75 110 dB68 VCM Steppedfrom0.5Vto11.5 70 97 PSRR Power SupplyRejectionRatio V+ = 2.7Vto5V,VCM = 0.5V 72 114 V+ = 3V to5V,VCM = 0.5V 76 115 dB72 V+ = 5V to12V,VCM = 0.5V 84 117 CMVR InputCommon-Mode Voltage CMRR ≥ 50 dB −0.1 12.1 VRange 0 12 AVOL LargeSignalVoltageGain Sinking,VO = 0.5V 89 110 dB84Sourcing,VO = 11.5V VO OutputSwing High VID = 100 mV 11.8 11.85 V11.72 OutputSwing Low VID = −100 mV 150 200 mV280 ISC OutputShortCircuitCurrent(6) Sourcing −650 −200 VID = 100 mV μA Sinking 200 1300 VID = −100 mV IS SupplyCurrent 1.2 1.75 μA2.5 SR Slew Rate(7) AV = +1,VO ramped from1V to11V 5.25 7.0 V/ms3.10 GBW Gain BandwidthProduct R L = 1 M Ω,C L= 50 pF 25 kHz Phase Margin R L = 1 M Ω,C L= 50 pF 52 deg en Input-ReferredVoltageNoise f= 100 Hz 320 nV/√Hz in Input-ReferredCurrentNoise f= 10 Hz .02 pA/√Hz f= 1 kHz .01 (1) Electricaltablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevice. (2) Limitsare100% productiontestedat25°C. Limitsovertheoperatingtemperaturerangearespecifiedthroughcorrelationsusingthe StatisticalQualityControl(SQC) method. (3) Typicalvaluesrepresentthemost likelyparametricnorm atthetimeofcharacterization. (4) Offsetvoltagedriftisspecifiedby designand/orcharacterizationand isnottestedinproduction.Offsetvoltagedriftisdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. (6) The ShortCircuitTestisa momentary test.See Note 4 intheAbsoluteMaximum RatingsTable. (7) Slew rateistheaverageoftherisingand fallingslewrates. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LPV511

SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com Connection Diagram Figure2. SC70-5 Top View SimplifiedSchematic

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0.1 1 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 ISOURCE (mA) OUTPUT VOLTAGE REFERENCED TO V + (V) 25° C 85° C 125° C -40° C V+ = 5V 0.1 1 10 0.5 1.5 2.5 3.5 4.5 ISINK (mA) OUTPUT VOLTAGE REFERENCED TO V - (V) V+ = 5V 25° C85° C -40° C 125° C -40° C 1 2 3 4 5 -0.4 -0.2 0.2 0.4 0.6 0.8 VOS (mV) VCM (V) -40° C 25° C 85° C V+ = 5V VCM (V) 0 2 4 6 8 10 12 -40° C 25° C 85° C V+ = 12V -0.6 -0.4 -0.2 0.2 0.4 VOS (mV) 0.6 0.8 0 4 10 0.2 0.4 0.6 0.8 1.6 SUPPLY CURRENT ( PA) SUPPLY VOLTAGE (V) 1.2 1.4 25°C 85ºC 125°C 2 6 8 12 -40°C 0 1 2 3 -0.4 -0.2 0.2 0.4 0.6 0.8 VOS (mV) VCM (V) -40° C 25° C 85ºC V+ = 3V LPV511 www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 TypicalPerformance Characteristics AtTJ = 25°C, unlessotherwisespecified. Supply Currentvs.Supply Voltage InputOffsetVoltagevs.InputCommon Mode Figure3. Figure4. InputOffsetVoltagevs.InputCommon Mode InputOffsetVoltagevs.InputCommon Mode Figure5. Figure6. Sourcing Currentvs.Output Voltage SinkingCurrentvs.Output Voltage Figure7. Figure8. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LPV511

-200 -100 100 200 300 400 500 IBIAS (pA) VCM (V) 25° C 85° C 125° C -40° C 125° C V+ = 12V 1 10 100 1k 10k FREQUENCY (Hz) 100 PSRR (dB) 0 1 2 3 4 5 -300 -200 -100 100 200 300 400 500 IBIAS (pA) VCM (V) 25° C 85° C 125° C -40° C 125° CV+ = 5V 0 0.5 1 1.5 2 2.5 3 VCM (V) -500 -300 -100 100 300 500 700 IBIAS (pA) 85° C 125° C -40° C 125° C V+ = 3V 25° C 0.1 1 10 100 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 ISOURCE (mA) OUTPUT VOLTAGE REFERENCED TO V + (V) 25° C 85° C 125° C -40° C V+ = 12V 0.1 1 10 100 0.5 1.5 2.5 3.5 4.5 ISINK (mA) OUTPUT VOLTAGE REFERENCED TO V - (V) 25° C85° C -40° C 125° C -40° C V+ = 12V LPV511 SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Sourcing Currentvs.Output Voltage SinkingCurrentvs.Output Voltage Figure9. Figure10. InputBias Currentvs.Common Mode Voltage InputBias Currentvs.Common Mode Voltage Figure11. Figure12. InputBias Currentvs.Common Mode Voltage PSRR vs.Frequency Figure13. Figure14.

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-23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN R L = 1 M: R L = 10 M: V+ = 5V C L = 20 pF 180 203 -23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN R L = 1 M: R L = 10 M: V+ = ±6V C L = 20 pF 180 203 -23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN 125° C -40° C V+ = ±6V C L = 20 pF R L = 1 M: 180 203 25° C -23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN R L = 1 M: R L = 10 M: V+ = 2.7V C L = 20 pF 180 203 -23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN 125° C -40° C V+ = 2.7V C L = 20 pF R L = 1 M: 180 203 25° C -23 113 135 158 PHASE (° ) 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) PHASE GAIN 125° C -40° C V+ = 5V C L = 20 pF R L = 1 M: 180 203 25° C LPV511 www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Frequency Response vs.Temperature Frequency Response vs.Temperature Figure15. Figure16. Frequency Response vs.Temperature Frequency Response vs.R L Figure17. Figure18. Frequency Response vs.R L Frequency Response vs.R L Figure19. Figure20. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LPV511

200 Ps/DIV

INPUT V+ = 5V 250 mV/DIV V+ = 5V 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) -30 -10 110 130 170 PHASE (° ) 150 PHASE GAIN C L = 20 pF C L = 50 pF C L = 100 pF V+ = ±6V R L = 1 M: C L = 200 pF 0.1 1 10 100 1k 10k 100 200 300 400 500 600 700 800 900 FREQUENCY (Hz) VOLTAGE NOISE (nV/ Hz) V+ = 5V 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) -23 113 135 158 203 PHASE (° ) 180 PHASE GAIN C L = 20 pF C L = 50 pF C L = 100 pF V+ = 2.7V R L = 1 M: C L = 200 pF 100 1k 10k 100k 1M FREQUENCY (Hz) -20 100 120 140 160 180 GAIN (dB) -23 113 135 158 203 PHASE (° ) 180 PHASE GAIN C L = 20 pF C L = 50 pF C L = 100 pF V+ = 5V R L = 1 M: C L = 200 pF LPV511 SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. Frequency Response vs.C L Frequency Response vs.C L Figure21. Figure22. Frequency Response vs.C L VoltageNoise vs.Frequency Figure23. Figure24. Non-InvertingSmall SignalPulse Response Non-InvertingLarge SignalPulse Response Figure25. Figure26.

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V+ = 5V 500 mV/DIV V+ = 5V LPV511 www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) AtTJ = 25°C, unlessotherwisespecified. InvertingSmall SignalPulse Response InvertingLarge SignalPulse Response Figure27. Figure28. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LPV511

SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 www.ti.com APPLICATION NOTES The LPV511 isfabricatedwithTexas Instrument'sstate-of-the-artVIP50C process. INPUT STAGE The LPV511 has a rail-to-railinputwhichprovidesmore flexibilityforthesystem designer.As can be seen from thesimplifiedschematic,rail-to-railinputisachievedby usinginparallel,one PNP differentialpairand one NPN differentialpair.When thecommon mode inputvoltage(VCM )isnearV+,theNPN pairison and thePNP pairis off.When VCM isnearV−,theNPN pairisoffand thePNP pairison.When VCM isbetween V+ and V−,internal logicdecideshow much currenteach differentialpairwillget.Thisspeciallogicensuresstableand low distortion amplifieroperationwithintheentirecommon mode voltagerange. Because bothinputstageshave theirown offsetvoltage(VOS ) characteristic,theoffsetvoltageoftheLPV511 becomes a functionofVCM .VOS has a crossoverpointat1.0V below V+.Refertothe’VOS vs.VCM ’curveinthe TypicalPerformance Characteristicssection.Cautionshould be taken in situationswhere the inputsignal amplitudeiscomparableto the VOS valueand/orthe designrequireshighaccuracy.In thesesituations,itis necessaryfortheinputsignaltoavoidthecrossoverpoint. The inputbiascurrent,IB willchange invalueand polarityas theinputcrossesthetransitionregion.Inaddition, parameterssuch as PSRR and CMRR whichinvolvetheinputoffsetvoltagewillalsobe affectedby changes in VCM acrossthedifferentialpairtransitionregion. Differentialinputvoltageisthedifferenceinvoltagebetween thenon-inverting(+)inputand theinvertinginput(−) of the op amp. Due to the threeseriesdiodesacrossthe two inputs,the absolutemaximum differentialinput voltageis±2.1V.Thismay notbe a problemtomost conventionalop amp designs;however,designersshould avoidusingtheLPV511 as a comparator. OUTPUT STAGE The LPV511 outputvoltageswing 100 mV from rails@ 3V supply,which providesthe maximum possible dynamicrangeattheoutput.Thisisparticularlyimportantwhen operatingon lowsupplyvoltages. The LPV511 Maximum OutputVoltageSwing definesthe maximum swing possibleunder a particularoutput load.The LPV511 outputswings110 mV fromtherail@ 5V supplywithan outputloadof100 kΩ. DRIVING CAPACITIVE LOAD The LPV511 isinternallycompensated forstableunitygainoperation,witha 27 kHz typicalgainbandwidth. However, theunitygainfolloweristhemost sensitiveconfigurationtocapacitiveload.Directcapacitiveloading reducesthephase marginoftheop amp. When theoutputisrequiredtodrivea largecapacitiveload,greater than100 pF,a smallseriesresistorattheoutputoftheamplifierimprovesthephase margin(seeFigure29). InFigure29,theisolationresistorR ISO and theloadcapacitorC L forma poletoincreasestabilityby addingmore phase margintotheoverallsystem.The desiredperformancedepends on thevalueofR ISO.The biggertheR ISO resistorvalue,themore stableVOUT willbe.But theDC accuracyisdegradedwhen theR ISO getsbigger.Ifthere were a loadresistorinFigure29,theoutputvoltagewouldbe dividedby R ISO and theloadresistor. Figure29. ResistiveIsolationofCapacitiveLoad

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VOUT = RF ¨ § VREF - V1 R 1 + VREF - V2 R 2 + VREF - V3 R 3 + VREF LPV511 www.ti.com SNOSAG7C –AUGUST 2005–REVISED MARCH 2013 POWER SUPPLIES AND LAYOUT The LPV511 operatesfroma single2.7V to12V power supply.Itisrecommended tobypass thepower supplies witha 0.1μF ceramiccapacitorplacedclosetotheV+ and V− pins. Ground layoutimprovesperformanceby decreasingtheamount ofstraycapacitanceand noiseattheop amp's inputsand outputs.To decreasestraycapacitance,minimizePC board tracelengthsand resistorleads,and placeexternalcomponents closetotheop amps'spins. TypicalApplications BATTERY CURRENT SENSING The rail-to-railcommon mode inputrange and theverylow quiescentcurrentmake theLPV511 idealtouse in highsideand low sidebatterycurrentsensingapplications.The highsidecurrentsensingcircuitinFigure30 is commonly used ina batterychargertomonitorthechargingcurrentinordertopreventovercharging.A sense resistorR SENSE isconnectedtothebatterydirectly. Figure30. High Side CurrentSensing SUMMING AMPLIFIER The LPV511 operationalamplifierisa perfectfitina summing amplifiercircuitbecause oftherail-to-railinputand outputand thesub-microAmp quiescentcurrent.Inthisconfiguration,theamplifieroutputsthesum ofthethree inputvoltages. The ratioofthesum and theoutputvoltageisdefinedusingfeedbackand inputresistors. (1) Figure31. Summing AmplifierCircuit Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LPV511

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REVISION HISTORY

Changes from RevisionB (March 2013)toRevisionC Page

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www.ti.com 25-Feb-2015 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LPV511MG/NOPB ACTIVE SC70 DCK 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A91 LPV511MGX/NOPB ACTIVE SC70 DCK 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A91 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

www.ti.com 25-Feb-2015 Addendum-Page 2 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2016 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LPV511MG/NOPB SC70 DCK 5 1000 210.0 185.0 35.0 LPV511MGX/NOPB SC70 DCK 5 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2016 Pack Materials-Page 2

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