LPT16ED SIGE | Alldatasheet
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Technical content
Features
Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bum p p ads for wire b ond or fli p chi p (for direct die attachment)
Ordering Information
LPT16ED Bare Die Shipped in Waffle Pack Product Description The LPT 16ED is a silic on germanium l ow phase noise, h igh frequ ency NP N transistor for oscill ator applications up to 16GHz. The transistor exh ibits l ow 1/f noise an d provid es +13 dBm t ypical out put po wer at V CE of 3 V and I C equal to 20 m A. It is easil y operated from a si ngle supply volta ge with appr opriate e xternal passive components. The silicon germanium technology used in this device provides o utstanding high-frequency perf ormance combined with high t hermal conductivity and superior reliability u nder h arsh operating and storag e conditions. A complete mechanical description of the tra nsistor is available un der SiGe Se miconductor Document 07MS001. Functional Block Diagram E B C 38-DST-01 Rev 2.3 Sept 5/02 1 of 5
30 GHz SiGe Bipolar Transistor
Operation i n e xcess of any one of Abs olute Ma ximum R atings m ay re sult in perm anent d amage. T his is a high performance R F device with ESD ratin g < 2keV. Ha ndling an d assem bly of this d evice sho uld be done at ESD protected workstations. Symbol Parameter Min. Max. Unit VCBO Collector to Base Voltage +13.0 V VCEO Collector to Emitter Voltage +4.0 V VEBO Emitter to Base Voltage +1.5 V IC Collector Current 80 mA IB Base Current 2.0 mA PT Total Power Dissipation 250 mW Tj Junction Temperature +150 °C TSTG Storage Temperature -65 +150 °C Conditions: T A = unless otherwise specified 25°C Symbol Parameter Condition Min. Typ. Max. Unit VBE Base-emitter voltage IC = 1µA 670 687 700 mV BVCEO Collector-emitter breakdown voltage Open base 4.0 4.5 5.0 V BVCES Collector-emitter breakdown voltage Base-emitter shorted via 100kΩ 14 15.0 16 V BVEBO Emitter-base breakdown voltage IE = 100µA, open collector 2.0 2.3 2.6 V BVCBO Collector-base breakdown voltage Open emitter 14 15.0 16 V VA Early voltage IC = 10mA, VCE = 3V 100 200 300 V ICBO Collector-base cutoff current VCB = 5V and IE = 0 100 pA IEBO Emitter-base cutoff current VEB = 1.5V and IC = 0 5 10 15 µA hFE DC current gain VCE = 2V, IC = 20mA 50 60 150 38-DST-01 Rev 2.3 Sept 5/02 2 of 5
Symbol Parameter Note Min. Typ. Max. Unit VCE = 1.5V, IC = 10mA, f = 16GHz 0.7 1.0 1.3 dB IS21I2 Insertion Power Gain (ZS = ZL = 50Ω) VCE = 3.0V, IC = 20mA, f = 16GHz 2.3 2.6 2.9 dB VCE = 1.5V, IC = 10mA, f = 16GHz 3.3 3.6 4.2 dB MAG/ MSG Maximum Available Gain or Maximum Stable Gain VCE = 3.0V, IC = 20mA, f = 16GHz 4.9 5.2 5.6 dB Typical Performance Characteristics Please refer to application note (Document 07AN001). Residual Phase Noise (dBc/Hz) Frequency (Hz) Typical Measurements @
10 GHz, IC=5mA, VCE=1V
Typical Applications Information Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001). 38-DST-01 Rev 2.3 Sept 5/02 3 of 5
0,0 Dimensions are relative to the 0,0 cut die corner. Feature Specification Comments Die thickness 10 mil +/- 1mil X length 15.3 mil +/- 1mil Y length 14.5 mil +/- 1mil Pad diameter 2.9 mil +/- 0.1mil Pads are circular. Pad pitch 6 mil +/- 0.1mil Pad center to pad centre Pad/bump height 1 mil +/- 0.05mil Pad/bump co-planarity 0.2 mil Pad Center Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner Collector 5, 11 Emitter1 5, 5 Base 11, 5 Emitter 2 11, 11 Please refer to Document 01-MS-001 for SiGe’s die inspection criteria. For S-parameter data, please refer to SiGe Document 07SP001. 38-DST-01 Rev 2.3 Sept 5/02 4 of 5
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